JPH02270327A - Formation of bump electrode - Google Patents

Formation of bump electrode

Info

Publication number
JPH02270327A
JPH02270327A JP9061989A JP9061989A JPH02270327A JP H02270327 A JPH02270327 A JP H02270327A JP 9061989 A JP9061989 A JP 9061989A JP 9061989 A JP9061989 A JP 9061989A JP H02270327 A JPH02270327 A JP H02270327A
Authority
JP
Japan
Prior art keywords
bump
circuit substrate
electrode
mold
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9061989A
Inventor
Mamoru Izumi
Takeshi Kondo
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP9061989A priority Critical patent/JPH02270327A/en
Publication of JPH02270327A publication Critical patent/JPH02270327A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To enable the level and shape of a bump to be controlled by a relatively simple process thereby enabling such problems as increase in connecting resistance, defective connection, decline in reliability etc., to be solved by a method wherein at least one bump is two step structured of the same metal.
CONSTITUTION: Within a process electrically connecting an element 4 on a circuit substrate 2 on whose one main surface a conductor pattern is provided to an electrode pad 5 on a semiconductor chip 3 by at least one metallic bump 1, at least one of the said bump 1 is two step structured of the same metal. For example, a metallic ball 7 to be a bump is set in an inverse pyramid type dent of a mold 6 comprising an Si wafer. Next, a circuit substrate 2 provided with a conductor pattern is heated to be pressed down to the mold 6. Through these procedures, the metallic ball 7 is formed taking pyramid shape simultaneously transferred to the electrode pattern 4 of the circuit substrate 2 into a bump 8. Finally, the circuit substrate 2 is thermal pressure-fixed to the semiconductor chip 3 so that a bump electrode 1 as shown in figure may be formed.
COPYRIGHT: (C)1990,JPO&Japio
JP9061989A 1989-04-12 1989-04-12 Formation of bump electrode Pending JPH02270327A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9061989A JPH02270327A (en) 1989-04-12 1989-04-12 Formation of bump electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9061989A JPH02270327A (en) 1989-04-12 1989-04-12 Formation of bump electrode

Publications (1)

Publication Number Publication Date
JPH02270327A true JPH02270327A (en) 1990-11-05

Family

ID=14003505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9061989A Pending JPH02270327A (en) 1989-04-12 1989-04-12 Formation of bump electrode

Country Status (1)

Country Link
JP (1) JPH02270327A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482676B2 (en) 1997-01-09 2002-11-19 Fujitsu Limited Method of mounting semiconductor chip part on substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482676B2 (en) 1997-01-09 2002-11-19 Fujitsu Limited Method of mounting semiconductor chip part on substrate

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