JPH02265194A - Color thin-film el panel - Google Patents
Color thin-film el panelInfo
- Publication number
- JPH02265194A JPH02265194A JP1083959A JP8395989A JPH02265194A JP H02265194 A JPH02265194 A JP H02265194A JP 1083959 A JP1083959 A JP 1083959A JP 8395989 A JP8395989 A JP 8395989A JP H02265194 A JPH02265194 A JP H02265194A
- Authority
- JP
- Japan
- Prior art keywords
- film
- panel
- thin
- insulating layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 150000004767 nitrides Chemical class 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000010408 film Substances 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 5
- 239000003086 colorant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野コ
本発明は、薄膜ELパネルデイスプレィに関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film EL panel display.
[従来の技術]
一般に薄膜ELにおいて、フルカラー化を実現するため
には、光の3原色である赤、緑、青色に発光する層を同
一面上にそれぞれ配置する場合と、同様な素子を3次元
的に重ね合わせる場合と、発光する層を重ね、独立に制
御できるようにする場合の3通りが考えられる。さらに
、高輝度な発光色をカラーフィルターを用いることでフ
ルカラー化を実現するという方法もある。[Prior Art] In general, in order to realize full color in a thin film EL, it is necessary to arrange layers that emit red, green, and blue, which are the three primary colors of light, on the same surface, or to arrange three similar elements on the same surface. There are three possible methods: one in which the light-emitting layers are stacked one on top of the other, and the other in which the light-emitting layers are stacked so that they can be controlled independently. Furthermore, there is a method of realizing full color by using a color filter to emit high-intensity light.
この中でも、同様な素子を3次元的に重ねる場合、薄膜
ELの長所である高い解像度を損なうことなく、しかも
薄膜作製の点については、従来のモノカラーパネルの技
術だけで実現できるという利点がある。このパネルの構
造の代表例を第1図に示す。この構造のパネルを用いて
十分なカラー表示を行うためには、視差の問題からそれ
ぞれのガラス基板のギャップは小さい方が望ましい。Among these, when similar elements are stacked three-dimensionally, there is an advantage that the high resolution, which is an advantage of thin-film EL, can be achieved without sacrificing the high resolution, and thin-film fabrication can be achieved using only conventional monocolor panel technology. . A typical example of the structure of this panel is shown in FIG. In order to perform sufficient color display using a panel with this structure, it is desirable that the gap between each glass substrate be small due to parallax problems.
一方、薄膜ELパネルにおいては、寿命の問題から薄膜
の防湿(パッシベーション)を行うことが必要であるこ
とが知られており、その方法の1つとして従来技術では
薄膜形成面側にカバーグラスを設け、シリコンオイルで
封止する方法が実用化されている。しかし、上述したカ
ラー薄膜ELパネルにおいて、このような方法を用いる
ことは、基板間のギャップが小さいことから、十分な効
果が得られない。On the other hand, in thin-film EL panels, it is known that it is necessary to perform moisture-proofing (passivation) on the thin film due to longevity issues, and one of the methods for this in the prior art is to provide a cover glass on the side where the thin film is formed. , a method of sealing with silicone oil has been put into practical use. However, in the color thin film EL panel described above, the use of such a method does not provide a sufficient effect because the gap between the substrates is small.
[発明が解決しようとする課題]
本発明は、基板のギャップか小さく、かつ、優れた防湿
手段を有する薄膜ELパネルを提供しようとするもので
ある。[Problems to be Solved by the Invention] The present invention aims to provide a thin film EL panel having a small substrate gap and excellent moisture proofing means.
[課題を解決するための手段]
上記課題を解決するための本発明の構成は、透光性を有
し、かつ、それぞれ異なる発光色を示す薄膜EL素子を
重ね合わせた多色発光薄膜ELパネルにおいて、各発光
層に接する層を窒化物絶縁層とするカラー薄膜ELパネ
ルである。[Means for Solving the Problems] The structure of the present invention for solving the above problems is a multicolor light emitting thin film EL panel in which thin film EL elements that have translucency and each emit light in a different color are stacked. This is a color thin film EL panel in which the layer in contact with each light emitting layer is a nitride insulating layer.
本発明で絶縁層の材料として用いられる窒化物は、化学
的に非常に安定であり、膜の緻密性を高くすれば、優れ
たパッシベーション膜として用いることができる。The nitride used as the material for the insulating layer in the present invention is chemically very stable, and if the film is highly dense, it can be used as an excellent passivation film.
具体的な材料としては、電気特性を考えると、窒化ケイ
素、窒化アルミニウム、窒化ホウ素などが考えられる。As specific materials, considering electrical characteristics, silicon nitride, aluminum nitride, boron nitride, etc. can be considered.
これ等の窒化物によって絶縁層を形成するには上述した
ように、膜の緻密性を高くするような作製方法であれば
特に限定はされないが、手軽な方法としてはスパッタリ
ング法が考えられる。As mentioned above, there are no particular limitations on the method of forming an insulating layer using these nitrides as long as the method increases the density of the film, but a sputtering method can be considered as a simple method.
絶縁層以外のEL素子の構成材料である透明電極や発光
層、背面電極、そして発光層母体材料に添加される発光
中心等については、本発明の効果を得るために、特に材
料および作製方法を限定する必要がない。Regarding the constituent materials of the EL element other than the insulating layer, such as the transparent electrode, the light-emitting layer, the back electrode, and the light-emitting center added to the light-emitting layer base material, in order to obtain the effects of the present invention, the materials and manufacturing methods are particularly carefully selected. There is no need to limit it.
本発明の構成に従って製作したカラー薄膜ELパネルの
実施例を示す。An example of a color thin film EL panel manufactured according to the configuration of the present invention is shown.
[実施例コ
この実施例で用いるカラー薄膜ELパネルの構造は第1
図に示すように、ガラス基板lの上に順に透明電極2、
絶縁層3、発光層4、絶縁層3、透明電極2からなる発
光素子を二個対向して重ねたものである。[Example 1] The structure of the color thin film EL panel used in this example is as follows.
As shown in the figure, a transparent electrode 2,
Two light emitting elements each consisting of an insulating layer 3, a light emitting layer 4, an insulating layer 3, and a transparent electrode 2 are stacked facing each other.
各発光層4としてはそれぞれCa S : E u 薄
膜、SrS:Ce薄膜を用いた。As each light emitting layer 4, a CaS:Eu thin film and a SrS:Ce thin film were used, respectively.
絶縁層3としては全部窒化ケイ素膜を用いた。As the insulating layer 3, a silicon nitride film was used in all cases.
第2図にこのパネルの発光輝度の経時変化(曲線1)に
ついて示す。比較のために同様な素子構造で、絶縁層に
酸化物絶縁層である酸化シリコンを用いて作製したEL
パネルを同じ条件下で駆動した発光輝度の経時変化(曲
線2)についても示す。FIG. 2 shows the change over time in the luminance of this panel (curve 1). For comparison, an EL fabricated with a similar device structure using silicon oxide, an oxide insulating layer, as the insulating layer.
Also shown is the change in luminance over time (curve 2) when the panel was driven under the same conditions.
この第2図からもわかるように、窒化物絶縁層を用いた
パネルの方が発光輝度の経時変化が小さいことがわかる
。As can be seen from FIG. 2, the change in luminance over time is smaller in the panel using the nitride insulating layer.
[発明の効果コ
以上説明したように、本発明のカラー薄膜ELパネルは
従来のものに比較して耐久性が人きい。[Effects of the Invention] As explained above, the color thin film EL panel of the present invention has superior durability compared to conventional ones.
第1図は、異なる発光色を示す薄膜ELパネルを重ね合
わせて成るカラーELパネルすなわち本実施例で用いた
カラー薄膜ELパネルの概略断面図。
第2図は、本実施例において得られたカラー薄膜ELパ
ネルの発光輝度の経時変化を示すグラフである。
曲線1は、本発明により得られた特性であり、曲線2は
従来技術により得られた特性である。
1・・・ガラス基板、2・・・透明電極、3・・・絶縁
層、4・・・発光層。FIG. 1 is a schematic cross-sectional view of a color EL panel formed by overlapping thin-film EL panels that emit light of different colors, that is, a color thin-film EL panel used in this example. FIG. 2 is a graph showing the change over time in the luminance of the color thin film EL panel obtained in this example. Curve 1 is the characteristic obtained by the present invention, and curve 2 is the characteristic obtained by the conventional technique. DESCRIPTION OF SYMBOLS 1... Glass substrate, 2... Transparent electrode, 3... Insulating layer, 4... Light emitting layer.
Claims (1)
膜EL素子を重ね合わせた多色発光薄膜ELパネルにお
いて、各発光層に接する層を窒化物絶縁層とすることを
特徴とするカラー薄膜ELパネル。A multicolor light-emitting thin-film EL panel in which thin-film EL elements having translucency and each emitting light of a different color are superimposed, the color thin film being characterized in that a layer in contact with each light-emitting layer is a nitride insulating layer. EL panel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1083959A JPH02265194A (en) | 1989-04-04 | 1989-04-04 | Color thin-film el panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1083959A JPH02265194A (en) | 1989-04-04 | 1989-04-04 | Color thin-film el panel |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02265194A true JPH02265194A (en) | 1990-10-29 |
Family
ID=13817104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1083959A Pending JPH02265194A (en) | 1989-04-04 | 1989-04-04 | Color thin-film el panel |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02265194A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001052864A (en) * | 1999-06-04 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | Making method of opto-electronical device |
JP2004006243A (en) * | 1999-06-04 | 2004-01-08 | Semiconductor Energy Lab Co Ltd | Manufacturing method of electro-optical device |
JP2006032977A (en) * | 1999-06-04 | 2006-02-02 | Semiconductor Energy Lab Co Ltd | Electro-optical device |
JP2007048758A (en) * | 1999-06-04 | 2007-02-22 | Semiconductor Energy Lab Co Ltd | Method for manufacturing electrooptical device |
JP2007066912A (en) * | 1999-06-04 | 2007-03-15 | Semiconductor Energy Lab Co Ltd | Method for manufacturing electro-optical device |
JP2007188890A (en) * | 1999-06-04 | 2007-07-26 | Semiconductor Energy Lab Co Ltd | Manufacturing method of electro-optical device |
US8890172B2 (en) | 1999-06-04 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
-
1989
- 1989-04-04 JP JP1083959A patent/JPH02265194A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001052864A (en) * | 1999-06-04 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | Making method of opto-electronical device |
JP2004006243A (en) * | 1999-06-04 | 2004-01-08 | Semiconductor Energy Lab Co Ltd | Manufacturing method of electro-optical device |
JP2006032977A (en) * | 1999-06-04 | 2006-02-02 | Semiconductor Energy Lab Co Ltd | Electro-optical device |
JP2007048758A (en) * | 1999-06-04 | 2007-02-22 | Semiconductor Energy Lab Co Ltd | Method for manufacturing electrooptical device |
JP2007066912A (en) * | 1999-06-04 | 2007-03-15 | Semiconductor Energy Lab Co Ltd | Method for manufacturing electro-optical device |
JP2007188890A (en) * | 1999-06-04 | 2007-07-26 | Semiconductor Energy Lab Co Ltd | Manufacturing method of electro-optical device |
JP4515349B2 (en) * | 1999-06-04 | 2010-07-28 | 株式会社半導体エネルギー研究所 | Electro-optic device |
JP4515469B2 (en) * | 1999-06-04 | 2010-07-28 | 株式会社半導体エネルギー研究所 | Method for manufacturing electro-optical device |
JP4532452B2 (en) * | 1999-06-04 | 2010-08-25 | 株式会社半導体エネルギー研究所 | Electro-optic device |
US8890172B2 (en) | 1999-06-04 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
US9293726B2 (en) | 1999-06-04 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
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