JPH0226341B2 - - Google Patents
Info
- Publication number
- JPH0226341B2 JPH0226341B2 JP20550182A JP20550182A JPH0226341B2 JP H0226341 B2 JPH0226341 B2 JP H0226341B2 JP 20550182 A JP20550182 A JP 20550182A JP 20550182 A JP20550182 A JP 20550182A JP H0226341 B2 JPH0226341 B2 JP H0226341B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- cathode ray
- antistatic
- sio
- ray tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 5
- 238000009835 boiling Methods 0.000 description 3
- 150000003606 tin compounds Chemical class 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- -1 silica compound Chemical class 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229920000298 Cellophane Polymers 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- 229940072033 potash Drugs 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/86—Vessels; Containers; Vacuum locks
- H01J29/867—Means associated with the outside of the vessel for shielding, e.g. magnetic shields
- H01J29/868—Screens covering the input or output face of the vessel, e.g. transparent anti-static coatings, X-ray absorbing layers
Description
本発明はブラウン管の帯電防止膜に関する。
ブラウン管は高圧で作動させるため、特にスイ
ツチオンあるいはオフ時にフエース面に静電気が
誘起される。この静電気のために、フエース面に
ほこりが付着し輝度低下を起こしたり、フエース
面に触つた時にシヨツクを受ける。特にデイスプ
レイ用ブラウン管のように、フエース面に常時触
れることが多いものに対しては、帯電防止策を図
ることが望しい。
従来、この目的のためにブラウン管フエース面
に帯電防止膜すなわち導電膜を設けることが知ら
れており、この導電膜としてはSnO2膜が最も一
般的である。しかし、この膜は膜強度が弱く耐候
性に欠けるため、時間の経過と共に容易に剥離し
てしまう欠点を有する。
本発明は、かかる従来の帯電防止膜の欠点を解
消することを目的としてなされたもので、SnO2
導電膜にSiO2、K2Oの少くとも一つを含有せし
めることにより膜強度の増大を図ることを特徴と
する。
一般に、SnO2導電膜は有機錫化合物または無
機錫化合物を含んだ溶液をブラウン管のフエイス
面あるいはブラウン管用パネルのフエイス面に浸
漬またはスピニングにより塗布し、これを焼成す
ることにより形成される。本発明は、かかる錫化
合物溶液に有機または無機のシリカ化合物あるい
はカリ化合物を添加した溶液を、同様に塗布・焼
成することにより得られる。
本発明はSnO2導電膜にSiO2、K2Oあるいはこ
れら両者を含有せしめ、その膜抵抗値を帯電防止
効果が得られるように、また所望の膜強度が得ら
れるようにこれらの含有割合を選択する。この含
有割合は、通常Snに対するSiあるいはＫの割合
（モル比）で表示すると、0.1〜７の範囲で適用で
きる。即ちSi＋Ｋ／Sn（モル比、以下同じ）が0.1
〜７であれば良い。この場合、SnO2導電膜に
K2Oのみを含有せしめるときには、SiO2を含有
せしめる場合に比べてＫのSnに対する割合は若
干小さくても同程度の効果が得られ、Ｋ／Snは
0.1〜５程度でも充分である。
Si＋Ｋ／Snが0.1以下の場合には、Si、Ｋの添
加効果が殆んどなく、所期の目的が達成できな
い。他方、７以上になると、生成膜の状態が悪く
なり、実用に供さなくなる。特にSiO2単独で膜
強化する場合には、Si／Snは３〜５の範囲が望
しい。
なお、Sn量は膜抵抗値によつて増減されるが、
この抵抗値を下げるために、通常実施されるSb、
Ｆ等を微量添加しても、膜強度に対する効果は実
質的に変らない。帯電防止効果が得られる膜抵抗
値は、通常108〜102Ω／□程度である。
次に、本発明の実施例を（オクチル酸錫＋ブタ
ノール）処理液にエチルシリケートを添加した場
合について示す。
The present invention relates to an antistatic film for a cathode ray tube. Since cathode ray tubes are operated at high pressure, static electricity is induced on the face surface, especially when the tube is turned on or off. Due to this static electricity, dust adheres to the face surface, causing a decrease in brightness, and when the face surface is touched, the user receives a shock. In particular, it is desirable to take anti-static measures for devices such as display cathode ray tubes, whose faces are often touched at all times. Conventionally, it has been known to provide an antistatic film, that is, a conductive film, on the face of a cathode ray tube for this purpose, and the most common conductive film is a SnO 2 film. However, this film has a drawback that it easily peels off over time because it has low film strength and lacks weather resistance. The present invention was made with the aim of eliminating the drawbacks of such conventional antistatic films .
The conductive film is characterized by containing at least one of SiO 2 and K 2 O to increase the film strength. Generally, the SnO 2 conductive film is formed by applying a solution containing an organic tin compound or an inorganic tin compound to the face surface of a cathode ray tube or the face surface of a cathode ray tube panel by dipping or spinning, and firing the solution. The present invention can be obtained by similarly applying and firing a solution in which an organic or inorganic silica compound or a potash compound is added to the tin compound solution. In the present invention, the SnO 2 conductive film contains SiO 2 , K 2 O, or both, and the content ratio is adjusted so that the resistance value of the film is increased to obtain an antistatic effect and the desired film strength is obtained. select. This content ratio is generally applicable in the range of 0.1 to 7 when expressed as the ratio (molar ratio) of Si or K to Sn. That is, Si+K/Sn (molar ratio, same below) is 0.1
~7 is fine. In this case, the SnO2 conductive film
When only K 2 O is contained, the same effect can be obtained compared to when SiO 2 is contained, even if the ratio of K to Sn is slightly smaller, and K/Sn is
A value of about 0.1 to 5 is sufficient. When Si+K/Sn is 0.1 or less, there is almost no effect of adding Si and K, and the intended purpose cannot be achieved. On the other hand, if it exceeds 7, the state of the produced film deteriorates and it becomes unusable. In particular, when strengthening the film using SiO 2 alone, Si/Sn is desirably in the range of 3 to 5. Note that the amount of Sn increases or decreases depending on the film resistance value,
In order to lower this resistance value, Sb, which is usually carried out,
Even if a small amount of F or the like is added, the effect on film strength does not substantially change. The membrane resistance value at which an antistatic effect can be obtained is usually about 10 8 to 10 2 Ω/□. Next, an example of the present invention will be shown in which ethyl silicate is added to the (tin octylate + butanol) treatment solution.
【表】
ここで、
抵抗値：５cmの表面抵抗値（温度70℃で測定）
膜強度：沸謄水で所定時間煮沸後、セロテープで
膜はがしテストを行ない、膜が剥離するまでの
煮沸時間
本発明は以上述べたように、SnO2電導膜に
SiO2、K2Oを単独あるいは両方を添加すること
により、膜強度を増大することができるので、膜
強度の大きい耐候性の優れたブラウン管の帯電防
止膜を得ることができ、特にフエース面に常時触
れることが多いデイスプレイ用ブラウン管の帯電
防止膜として好適する。[Table] Here, Resistance value: Surface resistance value of 5cm (measured at a temperature of 70℃) Film strength: After boiling in boiling water for a specified time, perform a film peeling test with cellophane tape, and determine the boiling time until the film peels off. As mentioned above, the invention is based on SnO 2 conductive film.
By adding SiO 2 or K 2 O alone or in combination, the film strength can be increased, so it is possible to obtain an antistatic film for cathode ray tubes with high film strength and excellent weather resistance. Suitable as an antistatic coating for display cathode ray tubes, which are frequently touched.
Claims (1)
止膜であつて、該帯電防止膜はSiO2、K2Oの少
くとも一つを含有するSnO2電導膜からなり、Si
＋Ｋ／Sn（モル比）が0.1〜７であるブラウン管の
帯電防止膜。 ２ Ｋ／Sn（モル比）が0.1〜５である特許請求の
範囲第１項記載のブラウン管の帯電防止膜。 ３ SiO2、K2Oの少くとも一つを含有するSnO2
電導膜にSbを微量添加した特許請求の範囲第１
項記載のブラウン管の帯電防止膜。 ４ SiO2、K2Oの少くとも一つを含有するSnO2
電導膜にＦを微量添加した特許請求の範囲第１項
記載のブラウン管の帯電防止膜。 ５ Si／Sn（モル比）が３〜５である特許請求の
範囲第１項記載のブラウン管の帯電防止膜。[Scope of Claims] 1. An antistatic film deposited on the face of a cathode ray tube, which antistatic film is made of a SnO 2 conductive film containing at least one of SiO 2 and K 2 O;
An antistatic film for cathode ray tubes with a +K/Sn (molar ratio) of 0.1 to 7. 2. The antistatic film for a cathode ray tube according to claim 1, wherein the K/Sn (molar ratio) is 0.1 to 5. 3 SnO 2 containing at least one of SiO 2 and K 2 O
Claim 1 in which a small amount of Sb is added to the conductive film
Antistatic coating for cathode ray tubes as described in . 4 SnO 2 containing at least one of SiO 2 and K 2 O
The antistatic film for a cathode ray tube according to claim 1, wherein a small amount of F is added to the conductive film. 5. The antistatic film for a cathode ray tube according to claim 1, wherein the Si/Sn (molar ratio) is 3 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20550182A JPS5996638A (en) | 1982-11-25 | 1982-11-25 | Antistatic preventing film of cathode-ray tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20550182A JPS5996638A (en) | 1982-11-25 | 1982-11-25 | Antistatic preventing film of cathode-ray tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5996638A JPS5996638A (en) | 1984-06-04 |
| JPH0226341B2 true JPH0226341B2 (en) | 1990-06-08 |
Family
ID=16507899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20550182A Granted JPS5996638A (en) | 1982-11-25 | 1982-11-25 | Antistatic preventing film of cathode-ray tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5996638A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4563612A (en) * | 1984-06-25 | 1986-01-07 | Rca Corporation | Cathode-ray tube having antistatic silicate glare-reducing coating |
| JPH088080B2 (en) * | 1986-12-24 | 1996-01-29 | 株式会社東芝 | Cathode ray tube and method of manufacturing cathode ray tube |
| JPS63195686A (en) * | 1987-02-10 | 1988-08-12 | 触媒化成工業株式会社 | Display device and manufacture thereof |
| KR910002977B1 (en) * | 1987-04-28 | 1991-05-11 | 가부시기가이샤 도오시바 | Cathode ray tube having anti-charge sheet in front panel |
| US4945282A (en) | 1987-12-10 | 1990-07-31 | Hitachi, Ltd. | Image display panel having antistatic film with transparent and electroconductive properties and process for processing same |
| US5291097A (en) * | 1990-05-14 | 1994-03-01 | Hitachi, Ltd. | Cathode-ray tube |
| FR2663486B1 (en) * | 1990-06-15 | 1997-01-24 | Thomson Consumer Electronics | DEVICE FOR VIEWING OR PROJECTING IMAGES OR THE LIKE. |
-
1982
- 1982-11-25 JP JP20550182A patent/JPS5996638A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5996638A (en) | 1984-06-04 |
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