JPH02230756A - Copper electrode wiring material - Google Patents
Copper electrode wiring materialInfo
- Publication number
- JPH02230756A JPH02230756A JP5141589A JP5141589A JPH02230756A JP H02230756 A JPH02230756 A JP H02230756A JP 5141589 A JP5141589 A JP 5141589A JP 5141589 A JP5141589 A JP 5141589A JP H02230756 A JPH02230756 A JP H02230756A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode wiring
- copper
- copper electrode
- wiring material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 22
- 239000010949 copper Substances 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 title claims abstract description 7
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 5
- 229910002058 ternary alloy Inorganic materials 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 229910002056 binary alloy Inorganic materials 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 229910052763 palladium Inorganic materials 0.000 claims abstract 3
- 229910052697 platinum Inorganic materials 0.000 claims abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 239000013077 target material Substances 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- -1 argon ions Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910004339 Ti-Si Inorganic materials 0.000 description 1
- 229910010978 Ti—Si Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は集積回路装置におげろ銅電極配線材料に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a copper electrode wiring material for integrated circuit devices.
［発明が解決しようとする課題］
しかし、上記従来技術によると集積回路装置における銅
電極配線が下地Ｓ１０，膜等の絶縁膜との密着性が無《
剥離し易い等の課題があった。[Problems to be Solved by the Invention] However, according to the above-mentioned prior art, the copper electrode wiring in the integrated circuit device has no adhesion to the base S10, the insulating film such as the film, etc.
There were problems such as easy peeling.
本発明は、かかる従来技術の課題を解決し集積回路装置
における銅電極配線の絶縁膜との密着性の良好な銅電極
配線材料を提供する事を目的とする。An object of the present invention is to solve the problems of the prior art and to provide a copper electrode wiring material that has good adhesion to the insulating film of the copper electrode wiring in an integrated circuit device.
［課題を解決するための手段］
上記課題を解決するために、本発明は、銅電極配線材料
に関し、銅膜中にｐａ，ｐｔ，Ｒｈ又はＡｌ、Ｔｉ，Ｓ
ｉ，Ｏｒ，，Ｎｉ等を２元合金又は３元合金として１１
．１％〜５％程度含有させる手段を取る。[Means for Solving the Problems] In order to solve the above problems, the present invention relates to a copper electrode wiring material, and provides pa, pt, Rh or Al, Ti, S in the copper film.
11 as a binary or ternary alloy of i, Or,, Ni, etc.
．． Measures are taken to make the content about 1% to 5%.
［従来の技術］
従来集檀回路装置における銅電極配線材料には、高純度
鋼膜がスパッタ蒸着法等により形成されて成るのが通例
であった。[Prior Art] Conventionally, as a copper electrode wiring material in an integrated circuit device, a high-purity steel film is usually formed by a sputter deposition method or the like.
［実施例コ 以下、実施例により本発明を詳述する。[Example code] Hereinafter, the present invention will be explained in detail with reference to Examples.
いま、高純度銅中にＰｄをｃＬ５重量％程度含有したタ
ーゲット材を用いて、Ｓｉ基板上の８１０，？上へ、ア
ルゴン，スパッタによりスバッタ蒸着すると、Ｐｄ含有
鋼膜は、ＳｉＯ■膜との密着性も良《剥離する事等もな
い。Ｐｄの代りにｐｔやＲｈを含有させても同様の効果
がある。Ｐｄ含有銅膜は、ポリイミド膜等の有機膜上に
蒸着させても剥離することな《、丁度従来行なわれてい
るメッキ処理におけるＰｄ活性化処理と同様の効果があ
り、Ｐ （１ − Ｏ ｕの２層膜形成の場合とその密
着性に於て差はなくなる。Now, using a target material containing about 5% by weight of Pd in high-purity copper, 810, ? When sputter-deposited using argon and sputtering, the Pd-containing steel film has good adhesion to the SiO2 film and does not peel off. Similar effects can be obtained by containing pt or Rh instead of Pd. A Pd-containing copper film does not peel off even when deposited on an organic film such as a polyimide film. There is no difference in adhesion from the case of two-layer film formation.
また、銅中に、１％程度のＡｔを含有させたり１％程度
のＴ１を含有させても絶縁膜との密着性を改善すること
ができ、ＡＬやＴ１の代りに８１やＯｒあるいはＮ１を
添加しても従来の如く下地にＡｔｉ’Ｉ’ｉ ，Ｓｉ．
，Ｏｒ ，Ｎｉ．等を形成したＯｕ膜の如く多層の膜の
場合と同様の効果がある更に、Ｏ ｕ − Ａ Ｌ −
Ｓ ｉ、あるいはＯ ｕ − Ｔ ｉ−Ｓｉ等の如く
、Ｏｕ中にＱ．１％〜５％程度のＡｔやＴ１及びＳ１を
添加して３元合金系にしても絶縁膜との密着性を向上す
ることができる。In addition, the adhesion with the insulating film can be improved even if the copper contains about 1% At or about 1% T1, and 81, Or, or N1 can be used instead of AL or T1. Even if Ati'I'i, Si.
, Or , Ni. In addition, it has the same effect as a multilayer film such as the Ou film formed with Ou-AL-
Q. Si, or Ou-Ti-Si, etc., in Ou. Adhesion to the insulating film can also be improved by adding about 1% to 5% of At, T1, and S1 to form a ternary alloy system.
［発明の効果］
本発明により、集積回路装置における銅電極配線の絶縁
膜との密着性の向上を計ることができる効果がある。[Effects of the Invention] According to the present invention, it is possible to improve the adhesion between the copper electrode wiring and the insulating film in an integrated circuit device.
以上that's all
Claims (1)
ｒ、Ｎｉ等が２元合金又は３元合金として０．１〜５％
程度含有されて成る事を特徴とする銅電極配線材料。The copper film contains Pd, Pt, Rh or Al, Ti, Si, C.
0.1 to 5% of r, Ni, etc. as binary or ternary alloy
A copper electrode wiring material characterized by containing a certain amount of copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5141589A JPH02230756A (en) | 1989-03-03 | 1989-03-03 | Copper electrode wiring material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5141589A JPH02230756A (en) | 1989-03-03 | 1989-03-03 | Copper electrode wiring material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02230756A true JPH02230756A (en) | 1990-09-13 |
Family
ID=12886298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5141589A Pending JPH02230756A (en) | 1989-03-03 | 1989-03-03 | Copper electrode wiring material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02230756A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0523701A2 (en) * | 1991-07-17 | 1993-01-20 | Nippondenso Co., Ltd. | Method of forming electrodes of semiconductor device |
| US5296653A (en) * | 1991-12-09 | 1994-03-22 | Kabushiki Kaisha Toshiba | Device having a multi-layered conductor structure |
| US5747360A (en) * | 1993-09-17 | 1998-05-05 | Applied Materials, Inc. | Method of metalizing a semiconductor wafer |
| US6441492B1 (en) | 1999-09-10 | 2002-08-27 | James A. Cunningham | Diffusion barriers for copper interconnect systems |
| US6455937B1 (en) | 1998-03-20 | 2002-09-24 | James A. Cunningham | Arrangement and method for improved downward scaling of higher conductivity metal-based interconnects |
| US6521532B1 (en) | 1999-07-22 | 2003-02-18 | James A. Cunningham | Method for making integrated circuit including interconnects with enhanced electromigration resistance |
| US6551872B1 (en) | 1999-07-22 | 2003-04-22 | James A. Cunningham | Method for making integrated circuit including interconnects with enhanced electromigration resistance using doped seed layer and integrated circuits produced thereby |
-
1989
- 1989-03-03 JP JP5141589A patent/JPH02230756A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0523701A2 (en) * | 1991-07-17 | 1993-01-20 | Nippondenso Co., Ltd. | Method of forming electrodes of semiconductor device |
| US5360765A (en) * | 1991-07-17 | 1994-11-01 | Nippondenso Co., Ltd. | Method of forming electrodes of semiconductor device |
| US5296653A (en) * | 1991-12-09 | 1994-03-22 | Kabushiki Kaisha Toshiba | Device having a multi-layered conductor structure |
| US5747360A (en) * | 1993-09-17 | 1998-05-05 | Applied Materials, Inc. | Method of metalizing a semiconductor wafer |
| US5904562A (en) * | 1993-09-17 | 1999-05-18 | Applied Materials, Inc. | Method of metallizing a semiconductor wafer |
| US6455937B1 (en) | 1998-03-20 | 2002-09-24 | James A. Cunningham | Arrangement and method for improved downward scaling of higher conductivity metal-based interconnects |
| US6521532B1 (en) | 1999-07-22 | 2003-02-18 | James A. Cunningham | Method for making integrated circuit including interconnects with enhanced electromigration resistance |
| US6551872B1 (en) | 1999-07-22 | 2003-04-22 | James A. Cunningham | Method for making integrated circuit including interconnects with enhanced electromigration resistance using doped seed layer and integrated circuits produced thereby |
| USRE41538E1 (en) | 1999-07-22 | 2010-08-17 | Cunningham James A | Method for making integrated circuit including interconnects with enhanced electromigration resistance using doped seed layer and integrated circuits produced thereby |
| US6441492B1 (en) | 1999-09-10 | 2002-08-27 | James A. Cunningham | Diffusion barriers for copper interconnect systems |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2264215A3 (en) | Copper alloy sputtering target, process for producing the same and semiconductor element wiring | |
| JPH02230756A (en) | Copper electrode wiring material | |
| US5288951A (en) | Copper-based metallizations for hybrid integrated circuits | |
| KR910003140A (en) | Corrosion-resistant and heat-resistant aluminum-based alloy thin film and method for manufacturing same | |
| FR2409660A1 (en) | PRINTED CIRCUIT SUBSTRATE WITH RESISTANT COATING | |
| TW201211276A (en) | NiCu alloy target for Cu electrode protection membrane and lamination membrane | |
| JP2003055721A (en) | Ag ALLOY THIN FILM ELECTRODE, ORGANIC EL ELEMENT AND TARGET FOR SPUTTERING | |
| JP6033493B1 (en) | Copper-based alloy sputtering target | |
| JPH11158613A (en) | Electrode substrate and production of the electrode substrate | |
| JPH0140511B2 (en) | ||
| JPH01248448A (en) | Target for forming thin film | |
| JPS6147705B2 (en) | ||
| Trompler et al. | Applying Aluminum Coating to Polycarbonate Parts | |
| JPH06299329A (en) | Composite mixed multilayer film | |
| JPH0250319A (en) | Magnetic recording medium | |
| JPS62294167A (en) | Manufacture of copper film | |
| JPH0417660A (en) | Method of forming metal film on methacrylic resin | |
| ES369064A1 (en) | Gold deposition | |
| JPS62272557A (en) | Manufacture of semiconductor device | |
| KR980005928A (en) | Metal wiring formation method of tape for semiconductor tab process | |
| JPH02153067A (en) | Shielding body for sputtering device | |
| JPS63132475A (en) | Thin film and manufacture thereof | |
| JPS61163263A (en) | Golden color exterior parts | |
| JPH07240570A (en) | Thin-film structure | |
| Shimogori et al. | Aluminium--Chromium Alloy Vapour-Deposited Material |