JPH02216840A - Semiconductor device, wire bonding thereof and device therefor, and manufacture of semiconductor device - Google Patents
Semiconductor device, wire bonding thereof and device therefor, and manufacture of semiconductor deviceInfo
- Publication number
- JPH02216840A JPH02216840A JP1037669A JP3766989A JPH02216840A JP H02216840 A JPH02216840 A JP H02216840A JP 1037669 A JP1037669 A JP 1037669A JP 3766989 A JP3766989 A JP 3766989A JP H02216840 A JPH02216840 A JP H02216840A
- Authority
- JP
- Japan
- Prior art keywords
- wires
- semiconductor device
- lead
- vss
- vcc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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Abstract
PURPOSE:To efficiently prevent short-circuit between wires, etc., and to improve bonding efficiency by forming a wire, which is straddling a lead arranged above a semiconductor chip in a resin-sealed semiconductor device, of a covered wire. CONSTITUTION:In a lead-on chip type semiconductor device 1, a pair of inner leads 4A and 4B, which extend along the center in the longitudinal direction of a semiconductor chip 2, are inner leads for Vcc and Vss, and the inner leads 4A and 4B, the inner leads 4 (external electrodes), being arranged on both sides of this inner lead 4, and the bonding pads 4 are connected respectively by wires. Among these wires, wires which are straddling the inner lead 4A for Vcc and the inner lead 4B for Vss are made of covered wires 6 that the metallic wires such as Au, Cu, Al, etc., are covered with insulating films. And by these wires 6, short circuits between the inner lead 4A for Vcc or the inner lead 4b for Vss and the wires straddling them are prevented surely.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1037669A JP2733282B2 (en) | 1989-02-17 | 1989-02-17 | Semiconductor device and wire bonding method thereof, and wire bonding device and manufacturing method of the semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1037669A JP2733282B2 (en) | 1989-02-17 | 1989-02-17 | Semiconductor device and wire bonding method thereof, and wire bonding device and manufacturing method of the semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02216840A true JPH02216840A (en) | 1990-08-29 |
JP2733282B2 JP2733282B2 (en) | 1998-03-30 |
Family
ID=12504040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1037669A Expired - Fee Related JP2733282B2 (en) | 1989-02-17 | 1989-02-17 | Semiconductor device and wire bonding method thereof, and wire bonding device and manufacturing method of the semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2733282B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0745656A (en) * | 1993-07-26 | 1995-02-14 | Nec Corp | Semiconductor device |
-
1989
- 1989-02-17 JP JP1037669A patent/JP2733282B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0745656A (en) * | 1993-07-26 | 1995-02-14 | Nec Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP2733282B2 (en) | 1998-03-30 |
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