JPH02216840A - Semiconductor device, wire bonding thereof and device therefor, and manufacture of semiconductor device - Google Patents

Semiconductor device, wire bonding thereof and device therefor, and manufacture of semiconductor device

Info

Publication number
JPH02216840A
JPH02216840A JP1037669A JP3766989A JPH02216840A JP H02216840 A JPH02216840 A JP H02216840A JP 1037669 A JP1037669 A JP 1037669A JP 3766989 A JP3766989 A JP 3766989A JP H02216840 A JPH02216840 A JP H02216840A
Authority
JP
Japan
Prior art keywords
wires
semiconductor device
lead
vss
vcc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1037669A
Other languages
Japanese (ja)
Other versions
JP2733282B2 (en
Inventor
Susumu Okikawa
Toshinori Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1037669A priority Critical patent/JP2733282B2/en
Publication of JPH02216840A publication Critical patent/JPH02216840A/en
Application granted granted Critical
Publication of JP2733282B2 publication Critical patent/JP2733282B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
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Abstract

PURPOSE:To efficiently prevent short-circuit between wires, etc., and to improve bonding efficiency by forming a wire, which is straddling a lead arranged above a semiconductor chip in a resin-sealed semiconductor device, of a covered wire. CONSTITUTION:In a lead-on chip type semiconductor device 1, a pair of inner leads 4A and 4B, which extend along the center in the longitudinal direction of a semiconductor chip 2, are inner leads for Vcc and Vss, and the inner leads 4A and 4B, the inner leads 4 (external electrodes), being arranged on both sides of this inner lead 4, and the bonding pads 4 are connected respectively by wires. Among these wires, wires which are straddling the inner lead 4A for Vcc and the inner lead 4B for Vss are made of covered wires 6 that the metallic wires such as Au, Cu, Al, etc., are covered with insulating films. And by these wires 6, short circuits between the inner lead 4A for Vcc or the inner lead 4b for Vss and the wires straddling them are prevented surely.
JP1037669A 1989-02-17 1989-02-17 Semiconductor device and wire bonding method thereof, and wire bonding device and manufacturing method of the semiconductor device Expired - Fee Related JP2733282B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1037669A JP2733282B2 (en) 1989-02-17 1989-02-17 Semiconductor device and wire bonding method thereof, and wire bonding device and manufacturing method of the semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1037669A JP2733282B2 (en) 1989-02-17 1989-02-17 Semiconductor device and wire bonding method thereof, and wire bonding device and manufacturing method of the semiconductor device

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JPH02216840A true JPH02216840A (en) 1990-08-29
JP2733282B2 JP2733282B2 (en) 1998-03-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745656A (en) * 1993-07-26 1995-02-14 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745656A (en) * 1993-07-26 1995-02-14 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JP2733282B2 (en) 1998-03-30

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