JPH02213821A - Thin-film transistor and active matrix circuit board formed by using this transistor and image display device - Google Patents

Thin-film transistor and active matrix circuit board formed by using this transistor and image display device

Info

Publication number
JPH02213821A
JPH02213821A JP3355789A JP3355789A JPH02213821A JP H02213821 A JPH02213821 A JP H02213821A JP 3355789 A JP3355789 A JP 3355789A JP 3355789 A JP3355789 A JP 3355789A JP H02213821 A JPH02213821 A JP H02213821A
Authority
JP
Japan
Prior art keywords
tftrs
electrodes
patterns
circuit board
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3355789A
Other versions
JP2804063B2 (en
Inventor
Akihiro Kenmochi
Toshiyuki Koshimo
Eiji Matsuzaki
Mitsuo Nakatani
Takao Takano
Yoshifumi Yoritomi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3355789A priority Critical patent/JP2804063B2/en
Publication of JPH02213821A publication Critical patent/JPH02213821A/en
Application granted granted Critical
Publication of JP2804063B2 publication Critical patent/JP2804063B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Abstract

PURPOSE: To attain a high yield and to improve responsiveness as well as to eliminate the unequalness of a screen by equivalently increasing the (channel width)/(channel length) ratio of thin-film transistors (TFTRs) consisting of amorphous silicon films (a-Si) to provide a higher on current.
CONSTITUTION: The width of the region in the transverse direction of the channels which attain electrical contact of drain electrodes 5 and source electrodes 6 of semiconductor film patterns is so disposed as to be on the inner side on gate electrodes 2 and the side walls of the semiconductor patterns existing on the lateral side of the channels are coated with the patterns of the drain electrodes 5 and the source electrodes 6. The side walls of the semiconductor patterns, therefore act as the drain electrodes 5 or the source electrodes 6 as well. Since the (channel width)/(channel length) ratio of the TFTRs is thereby equivalently increased, the on current of the TFTRs can be increased. The defective characteristics of the TFTRs which are provided in respective picture elements are decreased in the active matrix circuit board constituted of such TFTRs; in addition, the responsiveness is improved and the unequalness of the screen is eliminated.
COPYRIGHT: (C)1990,JPO&Japio
JP3355789A 1989-02-15 1989-02-15 Active matrix circuit board and an image display device using a thin film transistor and the transistor Expired - Lifetime JP2804063B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3355789A JP2804063B2 (en) 1989-02-15 1989-02-15 Active matrix circuit board and an image display device using a thin film transistor and the transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3355789A JP2804063B2 (en) 1989-02-15 1989-02-15 Active matrix circuit board and an image display device using a thin film transistor and the transistor

Publications (2)

Publication Number Publication Date
JPH02213821A true JPH02213821A (en) 1990-08-24
JP2804063B2 JP2804063B2 (en) 1998-09-24

Family

ID=12389856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3355789A Expired - Lifetime JP2804063B2 (en) 1989-02-15 1989-02-15 Active matrix circuit board and an image display device using a thin film transistor and the transistor

Country Status (1)

Country Link
JP (1) JP2804063B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253815B2 (en) 2003-06-05 2007-08-07 Au Optronics Corp. OLED display and pixel structure thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7224118B2 (en) * 2003-06-17 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus having a wiring connected to a counter electrode via an opening portion in an insulating layer that surrounds a pixel electrode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60112089A (en) * 1983-11-22 1985-06-18 Matsushita Electric Ind Co Ltd Image display unit and manufacture thereof
JPS6197864A (en) * 1984-10-18 1986-05-16 Asahi Glass Co Ltd Thin film transistor
JPS62297880A (en) * 1986-06-18 1987-12-25 Matsushita Electric Ind Co Ltd Manufacture of thin film transistor array
JPS63284524A (en) * 1987-05-15 1988-11-21 Matsushita Electric Ind Co Ltd Production of thin film transistor array

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60112089A (en) * 1983-11-22 1985-06-18 Matsushita Electric Ind Co Ltd Image display unit and manufacture thereof
JPS6197864A (en) * 1984-10-18 1986-05-16 Asahi Glass Co Ltd Thin film transistor
JPS62297880A (en) * 1986-06-18 1987-12-25 Matsushita Electric Ind Co Ltd Manufacture of thin film transistor array
JPS63284524A (en) * 1987-05-15 1988-11-21 Matsushita Electric Ind Co Ltd Production of thin film transistor array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253815B2 (en) 2003-06-05 2007-08-07 Au Optronics Corp. OLED display and pixel structure thereof

Also Published As

Publication number Publication date
JP2804063B2 (en) 1998-09-24

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