JPH022115A - Processor of semiconductor substrates - Google Patents

Processor of semiconductor substrates

Info

Publication number
JPH022115A
JPH022115A JP14524788A JP14524788A JPH022115A JP H022115 A JPH022115 A JP H022115A JP 14524788 A JP14524788 A JP 14524788A JP 14524788 A JP14524788 A JP 14524788A JP H022115 A JPH022115 A JP H022115A
Authority
JP
Japan
Prior art keywords
ion injection
heat treatment
substrate
separation door
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14524788A
Other languages
Japanese (ja)
Inventor
Yasuhisa Omura
Katsutoshi Izumi
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegr & Teleph Corp <Ntt> filed Critical Nippon Telegr & Teleph Corp <Ntt>
Priority to JP14524788A priority Critical patent/JPH022115A/en
Publication of JPH022115A publication Critical patent/JPH022115A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make it possible to manufacture semiconductor substrates of high quality by a method wherein a process for restoring the crystallization in the vicinity of the surface of a semiconductor substrate needed before and after ion injection is performed in another region connected to a portion used in ion injection at vacuum and this repetition work is performed in a series of devices.
CONSTITUTION: An ion injection section 6 and a heat treatment section 7 are positioned adjacent to each other, and are connected by passages 8a, 8b via a separation door 9, constituting a series of devices. First, after a single-crystal semiconductor substrate is cleaned, it is mounted on an ion injection section 6 and a predetermined amount of oxygen ions are injected into the substrate at a predetermined energy. After that, after the insides of the ion injection section 6 and the heat treatment section 7 are made at the same pressure, the separation door 9 is opened. The substrate is carried to the heat treatment section 7 through passages 8a and 8b during vacuum exhaust. The separation door 9 is closed and mounted at a predetermined position. For example, heat treatment is performed in vacuum or in a gas atmosphere using a lamp to restore the crystallization. After this, the substrate is carried to the ion injection section 6 again in the procedure described above and ion injection and heat treatment are repeated.
COPYRIGHT: (C)1990,JPO&Japio
JP14524788A 1988-06-13 1988-06-13 Processor of semiconductor substrates Pending JPH022115A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14524788A JPH022115A (en) 1988-06-13 1988-06-13 Processor of semiconductor substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14524788A JPH022115A (en) 1988-06-13 1988-06-13 Processor of semiconductor substrates

Publications (1)

Publication Number Publication Date
JPH022115A true JPH022115A (en) 1990-01-08

Family

ID=15380721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14524788A Pending JPH022115A (en) 1988-06-13 1988-06-13 Processor of semiconductor substrates

Country Status (1)

Country Link
JP (1) JPH022115A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007274007A (en) * 2007-06-18 2007-10-18 Toshiba Corp Method for manufacturing semiconductor device
JP2008118043A (en) * 2006-11-07 2008-05-22 Sumitomo Electric Ind Ltd Method for manufacturing semiconductor device, and apparatus for manufacturing semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107249A (en) * 1983-11-14 1985-06-12 Mitsubishi Electric Corp Device for implanting ion into semiconductor and thermal processing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107249A (en) * 1983-11-14 1985-06-12 Mitsubishi Electric Corp Device for implanting ion into semiconductor and thermal processing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008118043A (en) * 2006-11-07 2008-05-22 Sumitomo Electric Ind Ltd Method for manufacturing semiconductor device, and apparatus for manufacturing semiconductor
JP2007274007A (en) * 2007-06-18 2007-10-18 Toshiba Corp Method for manufacturing semiconductor device

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