JPH02203517A - Selective vapor-phase epitaxy of iii-v compound semiconductor - Google Patents
Selective vapor-phase epitaxy of iii-v compound semiconductorInfo
- Publication number
- JPH02203517A JPH02203517A JP2078989A JP2078989A JPH02203517A JP H02203517 A JPH02203517 A JP H02203517A JP 2078989 A JP2078989 A JP 2078989A JP 2078989 A JP2078989 A JP 2078989A JP H02203517 A JPH02203517 A JP H02203517A
- Authority
- JP
- Japan
- Prior art keywords
- growth
- chamber
- substrate
- sample
- openings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000000927 vapour-phase epitaxy Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 7
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 7
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims description 11
- 239000012808 vapor phase Substances 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 2
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 101100215641 Aeromonas salmonicida ash3 gene Proteins 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 229910005534 GaO2 Inorganic materials 0.000 description 3
- 239000002052 molecular layer Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、マスク開口部を有する基板上への選択気相エ
ピタキシャル成長方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of selective vapor phase epitaxial growth on a substrate having a mask opening.
［従来の技術およびその課題］ ■−ｖ族化合物半導体を用いたＭＥＳＦＥＴ。[Conventional technology and its issues] ■-MESFET using a V group compound semiconductor.
２次元電子ガス（２ＤＥＧ）ＦＥＴでは、デバイスの高
性能化を目積した構造形成のため、ＦＥＴのソース、ド
レイン領域に選択成長による高濃度ｎ 層を形成するこ
とがしばしば行われている。In a two-dimensional electron gas (2DEG) FET, in order to form a structure aimed at improving the performance of the device, a highly concentrated n layer is often formed in the source and drain regions of the FET by selective growth.
特に２０ＥＧＦＥＴでは、ヘテロ界面が劣化しや°すい
ため低温での選択成長が必要となる。この成長手法とし
て、従来、有機金属熱分解法（ＭＯＣｖＤ）、ハロゲン
輸送気相成長法（ＶＰＥ）等が広く用いられてきた。In particular, in the case of 20EGFET, selective growth at low temperatures is required because the hetero interface is easily deteriorated. Conventionally, metal organic pyrolysis (MOCvD), halogen transport vapor phase epitaxy (VPE), etc. have been widely used as this growth method.
しかし、従来のＭＯＣＶＤ、ＶＰ、Ｅの成長手法は、成
長速度が選択成長領域の面積および開口部間の距離に大
きく依存し、成長速度を精密に制御することが難しいと
いう欠点を有すると共に、成長温度が高いことから、ヘ
テロ界面が劣化しやすいという欠点も有している。この
点、新しい成長手法であるＡ Ｌ Ｅ （Ａｔｏｍｉｃ
Ｌａｙｅｒ Ｅｐｉｔａｘｙ ）の成長手法は、成長
温度を低温化できるという大きな長所を有している。ま
た、それ以上に単分子層単位の成長が可能であり、これ
を選択成長に応用できれば、極めて有力な手法となる。However, the conventional MOCVD, VP, and E growth methods have the disadvantage that the growth rate largely depends on the area of the selective growth region and the distance between the openings, making it difficult to precisely control the growth rate. It also has the disadvantage that the heterointerface tends to deteriorate due to the high temperature. In this respect, ALE (Atomic
The growth method (Layer Epitaxy) has the great advantage of being able to lower the growth temperature. Furthermore, it is possible to grow monolayer units, and if this can be applied to selective growth, it will be an extremely powerful technique.
しかし、これまでに部分的に開口部を持つ基板上へのＡ
ＬＥ法による成長の報告はほとんどない。However, until now, A
There are few reports of growth using the LE method.
そのため、次のような実験を行ってＡＬＥ法によるＧａ
Ａｓ選択成長の挙動を調べた。成長装置の概略構成図を
第４図に示す。図中、４１は■族原料を供給する成長室
、４３はＶ族原料を供給する成長室、４２はガリウム、
４４は試料である。成長手順としては、まず成長室４１
に試料４４を配置し、その基板領域にガリウム（（３ａ
）４２とＨＣｆとが反応してできる塩化ガリウム（Ｇａ
Ｏ２）を供給し、試料４４上に吸着させる。ここで試料
４４は第５図にその部分断面図を示すように、基板結晶
４５上に、５１０２をマスク４６とした開口部を有する
ものである。次に、試料４４をヒ素（ＡＳ）の成長室４
３に移動する。そこで、ＡＳＨ３を供給し、ＧａＡＳを
形成する。この操作を繰り返し、第５図に示すようなＧ
ａＡＳ層４７層形７した。Therefore, we conducted the following experiments to evaluate Ga using the ALE method.
The behavior of As selective growth was investigated. A schematic diagram of the growth apparatus is shown in FIG. In the figure, 41 is a growth chamber that supplies group II raw materials, 43 is a growth chamber that supplies group V raw materials, 42 is gallium,
44 is a sample. The growth procedure begins with the growth chamber 41.
A sample 44 is placed in the substrate area, and gallium ((3a
) 42 and HCf, gallium chloride (Ga
O2) is supplied and adsorbed onto the sample 44. Here, the sample 44 has an opening on the substrate crystal 45 with 5102 as a mask 46, as shown in a partial cross-sectional view in FIG. Next, the sample 44 is placed in the arsenic (AS) growth chamber 4.
Move to 3. Therefore, ASH3 is supplied to form GaAS. Repeat this operation until the G
The aAS layer has 47 layers.
上記のような方法により、成長条例として基板温度４５
０°Ｃ，ＧａＣ！供給時間１０秒、ＡＳＨ３供給時間１
０秒、ＡＳＨ３ガスのパージ時間を２５秒として実験を
行った。その結果、ＧａＯ２の成長室４１でマスク４６
領域にもＧａＯ２が吸着し、マスク４６領域に吸着した
ＧａＯ２が成長室４３で脱離して開口部の成長速度の増
大をもたらし、１ＡＬＥサイクル当たりの成長膜厚は単
分子層より厚くなり、膜厚の制御が難しいことが分かっ
た。By the method described above, the substrate temperature is 45% as a growth regulation.
0°C, GaC! Supply time 10 seconds, ASH3 supply time 1
The experiment was conducted with the ASH3 gas purge time set to 0 seconds and 25 seconds. As a result, a mask 46 is formed in the GaO2 growth chamber 41.
GaO2 is also adsorbed in the mask 46 region, and the GaO2 adsorbed in the mask 46 region is desorbed in the growth chamber 43, resulting in an increase in the growth rate of the opening, and the film thickness grown per one ALE cycle becomes thicker than a monomolecular layer. It turned out to be difficult to control.
本発明は以上述べたような従来の問題点を解決するため
になされたもので、ＡＬＥ成長方法において、マスク開
口部を持つ基板上の開口部分の成長速度が、開口面積お
よび開口部間からの距離に影響されずに単分子層単位の
成長を行うことのできる手法を提供することを目的とす
る。The present invention has been made to solve the conventional problems as described above, and in the ALE growth method, the growth rate of the opening portion on the substrate having mask openings is determined by the opening area and the distance between the openings. The purpose of this invention is to provide a method that allows growth in monolayer units without being affected by distance.
［課題を解決するための手段］
本発明は、マスク開口部を有する基板上への■−Ｖ族化
合物半導体の気相エピタキシャル成長方法において、■
族元素原料と塩化水素を同時に供給する工程と、Ｖ族元
素原料を供給する工程とを交互に行うことを特徴とする
■−ｖ族化合物半導体の選択気相エピタキシャル成長方
法である。[Means for Solving the Problems] The present invention provides a method for vapor phase epitaxial growth of a ■-V group compound semiconductor on a substrate having a mask opening.
(1) A selective vapor phase epitaxial growth method for group V compound semiconductors characterized in that a step of simultaneously supplying a group element raw material and hydrogen chloride and a step of supplying a group V element raw material are performed alternately.
［作用１
本発明によれば■族元素化合物の供給工程において、塩
化水素（ＨＣｆ）を同時供給することにより、マスク上
への■族元素の塩化物の吸着が抑制され、あるいは−旦
吸着が起っても脱離することにより、結果的にマスク上
への■族元素塩化物の吸着が生じない。このため、開口
部を持つ基板上への選択成長における１ＡＬＥサイクル
当たりの膜厚を１分子層の単位で制御することができる
。[Effect 1 According to the present invention, by simultaneously supplying hydrogen chloride (HCf) in the step of supplying the group (III) element compound, the adsorption of the chloride of the group (III) element onto the mask is suppressed, or the adsorption is temporarily prevented. Even if it occurs, it is desorbed, and as a result, adsorption of group (I) element chloride onto the mask does not occur. Therefore, the film thickness per one ALE cycle in selective growth on a substrate having an opening can be controlled in units of one molecular layer.
［実施例］
次に本発明の実施例について図面を参照して詳細に説明
する。[Example] Next, an example of the present invention will be described in detail with reference to the drawings.
第１図は本実施例で使用したＡＬＥ成長装置の概略構成
図であり、第２図は本実施例により得られた基板結晶の
部分断面図である。なお、本実施例では、■−ｖ族化合
物半導体としてＧａＡＳをＡＬＥ成長方法により成長さ
せる例を用いて説明する。FIG. 1 is a schematic diagram of the ALE growth apparatus used in this example, and FIG. 2 is a partial cross-sectional view of a substrate crystal obtained in this example. In this embodiment, an example will be described in which GaAS is grown as a ■-v group compound semiconductor by the ALE growth method.
成長装置は、Ｇａ原料を供給するための成長室１１とＡ
Ｓ原料を供給するための成長室１３とからなり、成長室
１１には（３ａ原料１２とＨＣ１供給配管１８が設置さ
れている。各成長室のキャリアガスとして水素（Ｈ２）
を用い、成長温度は４００℃とした。The growth apparatus includes a growth chamber 11 for supplying Ga raw material and A
The growth chamber 11 is equipped with a (3a raw material 12) and an HC1 supply pipe 18. Hydrogen (H2) is used as a carrier gas in each growth chamber.
was used, and the growth temperature was 400°C.
その他の成長条件は次の通りである。Other growth conditions are as follows.
ＨＣｆｆｉ （Ｇａ） １ ｃｃ／ｍ
ｔｎＡ Ｓ Ｈ３５ｃｃ／ｍ１ｎ
ＨＣ！ （バイパス用＞ ８ ｃｃ／ｍ１ｎ
Ｈ２（各成長室） ４７００ ｃｃ／ｍｉｎ
開口部長さ ２００ 卯成長に際して
は、５ｉ０２をマスク１６とし、部分的に開口部を持つ
基板結晶（試料）１４をまず成長室１３におき、所定の
温度まで昇温する。成長温度に達したところで、成長室
１１の成長領域に、ガリウム（Ｇａ）１３上にＨＣｆｆ
ｉを供給して生成した反応生成物ＧａＣｆ！と、Ｇａ１
２にバイパスするＨＣ２供給配管１８からのＨＣｆとを
供給し、成長領域をＧａＣｆｆ１とＨＣ！混合雰囲気に
する。雰囲気が安定したところで試料１４を成長室１１
に移動する。約７秒間、試料１４をこれらのガスにさら
したのち、試料１４を成長室１３に移動する。そこで、
Ａ・ＳＨ３を約７秒間供給し、ＧａＡＳ層を形成する。HCffi (Ga) 1 cc/m
tnA S H35cc/m1n HC! (For bypass > 8 cc/m1n
H2 (each growth chamber) 4700 cc/min
Opening Length: 200 During growth, using 5i02 as a mask 16, a substrate crystal (sample) 14 having a partially opened portion is placed in the growth chamber 13 and heated to a predetermined temperature. When the growth temperature is reached, HCff is placed on the gallium (Ga) 13 in the growth region of the growth chamber 11.
The reaction product GaCf! produced by supplying i! and Ga1
2 is supplied with HCf from the bypass HC2 supply pipe 18, and the growth region is divided into GaCff1 and HC! Create a mixed atmosphere. Once the atmosphere has stabilized, sample 14 is transferred to growth chamber 11.
Move to. After exposing the sample 14 to these gases for about 7 seconds, the sample 14 is moved to the growth chamber 13. Therefore,
A.SH3 is supplied for about 7 seconds to form a GaAS layer.
次に、ＡＳＨ３のパージを２５秒間行う。この操作を繰
り返し、第２図に示すようなＧａＡｓ層１７を成長した
。Next, purge ASH3 for 25 seconds. This operation was repeated to grow a GaAs layer 17 as shown in FIG.
第３図に、上記の方法で幅の異なる開口部形成したＧａ
Ａｓ層２３の１ＡＬＥサイクル当たりの膜厚を示す。同
図から、開口部の幅に依らずに１サイクル当たり１分子
層成長が実現されていることが分かる。Fig. 3 shows Ga with openings of different widths formed by the above method.
The film thickness of the As layer 23 per one ALE cycle is shown. It can be seen from the figure that growth of one molecular layer per cycle is achieved regardless of the width of the opening.
なお、本実施例では■族原料にＧａＣｊ！によるＧａＡ
ｓＡＬＥの選択成長の場合を示したが、その他の■−ｖ
族化合物半導体でも塩化物と塩化水素を同時に供給する
ことで、マスクの影響が減少した単分子層単位の選択成
長が得られる。In addition, in this example, GaCj! is used as the group ■ raw material. GaA by
The case of selective growth of sALE is shown, but other ■-v
By simultaneously supplying chloride and hydrogen chloride even in the case of group compound semiconductors, selective growth in monolayer units with reduced mask influence can be achieved.
Ｕ発明の効果Ｊ
以上説明したように、本発明の選択気相エピタキシャル
成長方法を用いれば、幅の異なる種々の開口部を有する
基板上への選択成長において、どの開口部も１ＡＬＥサ
イクル当たり１分子層の単位で成長を制御性良く行うこ
とができる。U Effect of the Invention J As explained above, if the selective vapor phase epitaxial growth method of the present invention is used, in selective growth on a substrate having various openings with different widths, each opening can be grown by one molecular layer per ALE cycle. Growth can be performed with good controllability in units of .
第１図は本発明の一実施例に用いられるＡＬＥ成長装置
の概略構成図、第２図は選択成長により得られた基板結
晶の部分断面図、第３図は本発明の１実施例により得ら
れた開口部幅と１ＡＬＥサイクル当たりの膜厚との関係
を示す図、第４図は従来の選択成長層を形成するための
ＡＬＥ成長装置の概略構成図、第５図は従来技術により
得られた基板結晶の部分断面図である。
１１、４１・・・■族元素原料を供給するための成長室
１２、４２・・・ガリウム
１３、４３・・・Ｖ族元素原料を供給するための成長室
１４、４４・・・試料
１５、４５・・・基板結晶
１６、４６・・・マスク
１７、４７−Ｇ ａ Ａ Ｓ層
１８・・・ＨＣβ供給配管FIG. 1 is a schematic configuration diagram of an ALE growth apparatus used in an embodiment of the present invention, FIG. 2 is a partial cross-sectional view of a substrate crystal obtained by selective growth, and FIG. 3 is a schematic diagram of an ALE growth apparatus used in an embodiment of the present invention. Figure 4 is a schematic diagram of an ALE growth apparatus for forming a conventional selectively grown layer, and Figure 5 is a diagram showing the relationship between the opening width and the film thickness per ALE cycle. FIG. 3 is a partial cross-sectional view of a substrate crystal. 11, 41...Growth chambers 12, 42 for supplying group ■ element raw materials...Gallium 13, 43...Growth chambers 14, 44 for supplying group V element raw materials, 45... Substrate crystal 16, 46... Mask 17, 47-G a A S layer 18... HCβ supply piping
Claims (1)
物半導体の気相エピタキシャル成長方法において、III
族元素原料と塩化水素を同時に供給する工程と、Ｖ族元
素原料を供給する工程とを交互に行うことを特徴とする
III−Ｖ族化合物半導体の選択気相エピタキシャル成長
方法。(1) In a method for vapor phase epitaxial growth of a III-V compound semiconductor on a substrate having a mask opening,
It is characterized by alternately performing the step of simultaneously supplying the group element raw material and hydrogen chloride and the step of supplying the group V element raw material.
A method for selective vapor phase epitaxial growth of III-V compound semiconductors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2078989A JPH02203517A (en) | 1989-02-01 | 1989-02-01 | Selective vapor-phase epitaxy of iii-v compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2078989A JPH02203517A (en) | 1989-02-01 | 1989-02-01 | Selective vapor-phase epitaxy of iii-v compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02203517A true JPH02203517A (en) | 1990-08-13 |
Family
ID=12036855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2078989A Pending JPH02203517A (en) | 1989-02-01 | 1989-02-01 | Selective vapor-phase epitaxy of iii-v compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02203517A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7732325B2 (en) | 2002-01-26 | 2010-06-08 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| US7781326B2 (en) | 2001-02-02 | 2010-08-24 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US10280509B2 (en) | 2001-07-16 | 2019-05-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
-
1989
- 1989-02-01 JP JP2078989A patent/JPH02203517A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7781326B2 (en) | 2001-02-02 | 2010-08-24 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US10280509B2 (en) | 2001-07-16 | 2019-05-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7732325B2 (en) | 2002-01-26 | 2010-06-08 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
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