JPH02203517A - Selective vapor-phase epitaxy of iii-v compound semiconductor - Google Patents

Selective vapor-phase epitaxy of iii-v compound semiconductor

Info

Publication number
JPH02203517A
JPH02203517A JP2078989A JP2078989A JPH02203517A JP H02203517 A JPH02203517 A JP H02203517A JP 2078989 A JP2078989 A JP 2078989A JP 2078989 A JP2078989 A JP 2078989A JP H02203517 A JPH02203517 A JP H02203517A
Authority
JP
Japan
Prior art keywords
chamber
openings
sample
substrate
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2078989A
Inventor
Haruo Sunakawa
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP2078989A priority Critical patent/JPH02203517A/en
Publication of JPH02203517A publication Critical patent/JPH02203517A/en
Application status is Granted legal-status Critical

Links

Abstract

PURPOSE: To realize a monomolecular vapor growth on a substrate having openings with different widths by performing altenately a process of supplying a group III element material and hydrogen chloride simultaneously and a process of supplying a group V element material.
CONSTITUTION: A substrate sample 14 having a mask of SiO2 partially opened is put within a growing chamber 13 and is heated to a predetermined temperature. Then, HCl is supplied over Ga 12 in a growing chamber 11 and GaCl thus produced is supplied together with HCl from a supply tube 18 so that a mixed atmosphere is established within the growing region. The sample 14 is transferred to the growing chamber 11 and exposed to the mixed atmosphere for a predetermined period of time. Then, the sample 14 is returned to the chamber 13 and AsH3 is supplied to form a GaAs layer in the openings. Thereafter, the chamber 13 is purged of AsH3. These procedures are repeated to grow the GaAs layer. In this manner, thickness per ALE cycle can be controlled by a unit of monomolecular layer in the selective growth on the substrate having openings with different widths.
COPYRIGHT: (C)1990,JPO&Japio
JP2078989A 1989-02-01 1989-02-01 Selective vapor-phase epitaxy of iii-v compound semiconductor Granted JPH02203517A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2078989A JPH02203517A (en) 1989-02-01 1989-02-01 Selective vapor-phase epitaxy of iii-v compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2078989A JPH02203517A (en) 1989-02-01 1989-02-01 Selective vapor-phase epitaxy of iii-v compound semiconductor

Publications (1)

Publication Number Publication Date
JPH02203517A true JPH02203517A (en) 1990-08-13

Family

ID=12036855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2078989A Granted JPH02203517A (en) 1989-02-01 1989-02-01 Selective vapor-phase epitaxy of iii-v compound semiconductor

Country Status (1)

Country Link
JP (1) JPH02203517A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7732325B2 (en) 2002-01-26 2010-06-08 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US7781326B2 (en) 2001-02-02 2010-08-24 Applied Materials, Inc. Formation of a tantalum-nitride layer
US10280509B2 (en) 2001-07-16 2019-05-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781326B2 (en) 2001-02-02 2010-08-24 Applied Materials, Inc. Formation of a tantalum-nitride layer
US10280509B2 (en) 2001-07-16 2019-05-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7732325B2 (en) 2002-01-26 2010-06-08 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers

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