JPH02192717A - Resist removing device - Google Patents

Resist removing device

Info

Publication number
JPH02192717A
JPH02192717A JP1298489A JP1298489A JPH02192717A JP H02192717 A JPH02192717 A JP H02192717A JP 1298489 A JP1298489 A JP 1298489A JP 1298489 A JP1298489 A JP 1298489A JP H02192717 A JPH02192717 A JP H02192717A
Authority
JP
Japan
Prior art keywords
resist
solvent
wafer substrate
nozzle
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1298489A
Other languages
Japanese (ja)
Inventor
Kenji Isono
礒野 謙二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1298489A priority Critical patent/JPH02192717A/en
Publication of JPH02192717A publication Critical patent/JPH02192717A/en
Pending legal-status Critical Current

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To cut down the time for removing process for augmenting the yield by a method wherein a resist removing solvent is discharged from two feed openings and then the resist sticked to the edge, back of a substrate and a focus reference pad is removed simultaneously with the resist removing solvent. CONSTITUTION:The peripheral edge part 8 of a wafer substrate 1 is encircled and tightly held by an over nozzle 2 and an under nozzle 3. A solvent 10 is discharged from feed openings 4a, 4b. The solvent 10 from the opening 4a runs out directly or from the substrate 1 to come into contact with a resist 7 for melting down the resist. The solvent 10 reflected on the inner surface of the nozzles 2, 3 comes into contact with the resist 7 on the back while the solvent 10 from the opening 4b comes into contact with the resist 7 on the focus reference pad part on the substrate 1. The waste solution of the solvent 10 containing the melted down resist 7 is drained from a drainage port 6 while vapor 11 is exhausted from an exhaust port 5.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、半導体の製造におけるフォトリソグラフィ工
程において、ウェハー基板上にレジストを塗布した後に
、ウェハー基板のエツジ、バックに付着したレジストを
除去することができ、且つ同時にウェハー基板上にてフ
ォーカスを決定するフォーカス基準パッドのあるアライ
ナ−のフォーカス基準パッド部へのレジスト付着を無く
することができるレジスト除去装置に関する。
[Detailed Description of the Invention] <Industrial Application Field> The present invention is a method for removing resist attached to the edges and back of a wafer substrate after applying a resist onto a wafer substrate in a photolithography process in semiconductor manufacturing. The present invention relates to a resist removing apparatus that can eliminate resist adhesion to a focus reference pad portion of an aligner having a focus reference pad for determining focus on a wafer substrate.

〈従来の技術〉 従来、ウェハー基板のエツジやバックに付着したレジス
トを除去するには、ウェハー基板を回転しながら溶剤(
例えばシンナー)をウェハー基板に吐出してレジストを
除去していた。また、ウェハー基板上にフォーカスを決
定するフォーカス基準パッドがあるアライナ−処理のウ
ェハー基板に対しては、溶剤をスポット的にフォーカス
基パλバッド部に吐出して、フォーカス基準パッド部に
付着したレジストの除去を行ってきた。
<Conventional technology> Conventionally, in order to remove resist attached to the edges and back of a wafer substrate, a solvent (
For example, resist was removed by discharging thinner) onto the wafer substrate. In addition, for aligner-processed wafer substrates that have a focus reference pad for determining focus on the wafer substrate, a solvent is discharged spot-wise onto the focus base pad λ pad to remove the resist attached to the focus reference pad. has been removed.

〈発明が解決しようとする課題〉 しかしながら、ウェハー基板のエツジ、バックに付着し
たレジストを、上記のように、ウェハー基板を回転しな
がら溶剤を吐出して除去する方法では、溶剤が飛敗し易
く、ウェハー基板上に溶剤が飛敗するとレジストのピン
ホールが発生する。
<Problems to be Solved by the Invention> However, in the method described above, in which the resist adhered to the edges and back of the wafer substrate is removed by discharging a solvent while rotating the wafer substrate, the solvent tends to be blown away. When the solvent splashes onto the wafer substrate, pinholes occur in the resist.

また特にオリエンテーションフラット部のレジストが除
去されにくい。また、フォーカス基準パッドがあるアラ
イナ−処理のウェハー基板に対しては、エツジ、バック
に付着したレジストの除去とフォーカス基準パッド部に
付着したレジストの除去とを別々に行っているので、レ
ジスト除去工程に要する時間が長くかかり、またウェハ
ー基板が溶剤にさらされる時間が長くなることによって
ウェハー基板の品質が低下する。
In addition, the resist in the orientation flat portion is particularly difficult to remove. In addition, for aligner-treated wafer substrates with focus reference pads, the resist attached to the edges and back is removed separately, and the resist attached to the focus reference pad is removed separately, so the resist removal process The quality of the wafer substrate is degraded due to the increased time required for the process and the increased exposure time of the wafer substrate to the solvent.

本発明は上記事情に鑑みて創案されたものであって、ウ
ェハー基板のエツジ、バックに付着したレジストとフォ
ーカス基準パッド部に付着したレジストとを同時に除去
することができ、従ってレジスト除去工程に要する時間
が短いレジスト除去装置を提供することを目的としてい
る。
The present invention was devised in view of the above-mentioned circumstances, and it is possible to simultaneously remove the resist attached to the edge and back of the wafer substrate and the resist attached to the focus reference pad portion, and therefore, it is possible to simultaneously remove the resist attached to the edge and back of the wafer substrate. The purpose of the present invention is to provide a resist removal device that takes a short time.

く課題を解決するための手段〉 上記課題を解決するために本発明のレジスト除去装置は
、表面にレジストを塗布したウェハー基板の周縁部分を
包囲収容し、前記ウェハー基板のエツジ、バックに付着
したレジストを除去する溶剤を吐出する第1の供給孔と
、前記周縁部分のフォーカス基準パッド部に付着したレ
ジストを除去する溶剤を供給する第2の供給孔と、前記
溶剤の排出孔と、前記溶剤の蒸気の排気孔とを有するノ
ズルを設けている。
Means for Solving the Problems> In order to solve the above problems, the resist removing apparatus of the present invention surrounds and accommodates the peripheral portion of a wafer substrate whose surface is coated with resist, and removes any particles that have adhered to the edges and back of the wafer substrate. a first supply hole for discharging a solvent for removing resist; a second supply hole for supplying a solvent for removing resist attached to the focus reference pad portion in the peripheral portion; a discharge hole for the solvent; A nozzle having a steam exhaust hole is provided.

〈作用〉 表面にレジストを塗布したウェハー基板の周縁部分をノ
ズルで包囲収容し、ノズルの第1と第2の供給孔から溶
剤をウェハー基板に吐出する。ウェハー基板のエツジ、
バックのレジストおよびフォーカス基準パッド部のレジ
ストは溶剤に当たって溶解し、溶解したレジストを含ん
だ溶剤の廃液はノズルの排出孔から排出され、溶剤の蒸
気はノズルの排気孔から排出される。
<Operation> A nozzle surrounds and accommodates the periphery of a wafer substrate whose surface is coated with resist, and a solvent is discharged onto the wafer substrate from the first and second supply holes of the nozzle. wafer substrate edge,
The resist on the back and the resist on the focus reference pad portion hit the solvent and dissolve, the waste solvent containing the dissolved resist is discharged from the discharge hole of the nozzle, and the solvent vapor is discharged from the discharge hole of the nozzle.

〈実施例〉 以下、図面を参照して本発明の一実施例を説明する。第
1図および第2図は本発明の一実施例を示し、第1図は
第2図のA−A線矢示断面説明図、第2図は平面図を示
す。
<Example> Hereinafter, an example of the present invention will be described with reference to the drawings. 1 and 2 show one embodiment of the present invention, FIG. 1 is an explanatory cross-sectional view taken along the line A--A in FIG. 2, and FIG. 2 is a plan view.

本実施例のレジスト除去装置100は、オーバーノズル
2とアンダーノズル3とを有している。第1図に示すよ
うに、1は上表面にレジスト7が塗布されたウェハー基
板であり、レジスト7はウェハー基板1のエツジ、バッ
クにまで回り込んで塗布されている。それぞれ、断面は
ぼ口字状のオーバーノズル2とアンダーノズル3とは対
向するように結合されており、第1図と第2図に示すよ
うに、オーバーノズル2とアンダーノズル3とでウェハ
ー基板1の周縁部分8をこの周縁部分8の全周にわたっ
て包囲密着保持収容している。従って、オーバーノズル
2とアンダーノズル3とが形成するスペース9は周縁部
分8を収容した状態で外気から遮断されている。
The resist removing apparatus 100 of this embodiment has an over nozzle 2 and an under nozzle 3. As shown in FIG. 1, numeral 1 is a wafer substrate whose upper surface is coated with a resist 7, and the resist 7 is coated around the edges and back of the wafer substrate 1. The over nozzle 2 and the under nozzle 3, each having a rectangular cross section, are connected so as to face each other, and as shown in FIGS. 1 and 2, the over nozzle 2 and the under nozzle 3 are connected to The circumferential edge portion 8 of the first one is enclosed and housed in close contact over the entire circumference of the circumferential edge portion 8. Therefore, the space 9 formed by the over nozzle 2 and the under nozzle 3 accommodates the peripheral portion 8 and is shielded from the outside air.

ウェハー基板上にてフォーカスを決定するフォーカス基
準パッドのあるアライナ−処理のウェハー基板に対して
は、第1図に示すように、オーバーノズル2に3個(本
実施例では3個であるがアライナ−によってはこれにこ
だわるものではない)の突出部2a、2b、2cがフォ
ーカス基準パッド部を覆うように形成されている。第1
図と第2図に示すように、オーバーノズル2には、レジ
スト7を溶かす)8剤10(例えばシンナー)をスペー
ス9内に吐出するための供給孔4a (第1の供給孔)
および供給孔4b (第2の供給孔)と、溶剤IOの蒸
気11をスペース9外へ排出する排気孔5とが設けられ
ている。供給孔4aはウェハー基板1のエツジ、バック
に付着したレジスト7を除去する溶剤1oを吐出するも
のであり、ウェハー基板lのサイズに応じて適当数の供
給孔4aがオーバーノズル2の上面の全周にわたって設
けられている。供給孔4bはフォーカス基準パッド部に
付着したレジスト7を除去する溶剤10を吐出するもの
であって、突出部2a、2b、2cの上面に設けられて
いる。所定個数設けられた排気孔5は図示しない排気装
置に導かれている。アンダーノズル3には、溶剤loの
廃?& 12をスペース9外に排出する所定個数の排出
孔6が設けられている。
For aligner-processed wafer substrates that have focus reference pads for determining focus on the wafer substrate, as shown in FIG. The projections 2a, 2b, and 2c (in some cases, but not limited to this) are formed so as to cover the focus reference pad section. 1st
As shown in FIG. 2 and FIG. 2, the over nozzle 2 has a supply hole 4a (first supply hole) for discharging an agent 10 (for example, thinner) that dissolves the resist 7 into the space 9.
A supply hole 4b (second supply hole) and an exhaust hole 5 for discharging the vapor 11 of the solvent IO to the outside of the space 9 are provided. The supply holes 4a are for discharging the solvent 1o for removing the resist 7 attached to the edges and back of the wafer substrate 1. Depending on the size of the wafer substrate 1, an appropriate number of supply holes 4a are provided to cover the entire upper surface of the over nozzle 2. It is located all around the circumference. The supply hole 4b discharges a solvent 10 for removing the resist 7 attached to the focus reference pad portion, and is provided on the upper surface of the protruding portions 2a, 2b, and 2c. A predetermined number of exhaust holes 5 are led to an exhaust device (not shown). Is there waste of solvent LO in the under nozzle 3? A predetermined number of discharge holes 6 are provided for discharging & 12 out of the space 9.

次に、本実施例の動作について説明する。Next, the operation of this embodiment will be explained.

ウェハー基板lのアラインメントを行い、ウェハー基板
1をアンダーノズル3上に置き、次いでオーバーノズル
2を降下させる。ウェハー基板1の周縁部分8をオーバ
ーノズル2とアンダーノズル3が包囲密着保持収容する
The wafer substrate 1 is aligned, placed on the under nozzle 3, and then the over nozzle 2 is lowered. An over nozzle 2 and an under nozzle 3 surround and hold a peripheral portion 8 of a wafer substrate 1 in close contact with each other.

この状態で、図示しない供給装置から送られて来る溶剤
10をオーバーノズル2の供給孔4a、4bからスペー
ス9内に吐出する。供給孔4aから吐出された溶剤10
は、直接に或いはウェハー基板1上から流れ出してエツ
ジのレジスト7に接触してこの部分のレジスト7を溶か
す。バックのレジスト7にはオーバーノズル2やアンダ
ーノズル3の内面で反射した溶剤10が接触してこの部
分のレジスト7を溶かす。供給孔4bから吐出された溶
剤lOは、ウェハー基板1上のフォーカス基準パッド部
に付着したレジスト7に接触し、このレジスト7が溶解
される。溶けたレジスト7を含んだ溶剤10の廃液12
は排出孔6から排出し、スペース9内の溶剤10の蒸気
11は排気孔5から排出する。
In this state, the solvent 10 sent from a supply device (not shown) is discharged into the space 9 from the supply holes 4a, 4b of the over nozzle 2. Solvent 10 discharged from supply hole 4a
The liquid flows directly or flows out from the top of the wafer substrate 1 and comes into contact with the resist 7 at the edge and melts the resist 7 at this portion. The solvent 10 reflected from the inner surfaces of the over nozzle 2 and the under nozzle 3 comes into contact with the back resist 7 and melts this portion of the resist 7. The solvent lO discharged from the supply hole 4b comes into contact with the resist 7 attached to the focus reference pad portion on the wafer substrate 1, and this resist 7 is dissolved. Waste liquid 12 of solvent 10 containing melted resist 7
is exhausted from the exhaust hole 6, and the vapor 11 of the solvent 10 in the space 9 is exhausted from the exhaust hole 5.

〈発明の効果〉 以上説明したように本発明のレジスト除去装置は、ウェ
ハー基板の周縁部分を包囲収容し、ウェハー基板のエツ
ジ、バックに付着したレジストを除去する溶剤を吐出す
る第1の供給孔と、周縁部分のフォーカス基準パッド部
に付着したレジストを除去する溶剤を供給する第2の供
給孔と、溶剤の排出孔と、溶剤の蒸気の排気孔とを有す
るノズルを設けている。
<Effects of the Invention> As explained above, the resist removal apparatus of the present invention includes a first supply hole that surrounds the peripheral portion of the wafer substrate and discharges a solvent for removing resist attached to the edges and back of the wafer substrate. A nozzle is provided which has a second supply hole for supplying a solvent for removing the resist attached to the focus reference pad portion in the peripheral portion, a solvent discharge hole, and a solvent vapor exhaust hole.

従って、ウェハー基板のエツジ、バックに([したレジ
ストとフォーカス基準パッド部に付着したレジストとを
同時に除去できるので、ウェハー基板のレジスト除去工
程に要する時間が短くなり、またウェハー基板が溶剤の
雰囲気にさらされる時間が短くなってウェハーの品質が
向上する結果、ウェハー基板の歩留りが良くなる。
Therefore, the resist attached to the edges and back of the wafer substrate and the resist attached to the focus reference pad can be removed at the same time, reducing the time required for the resist removal process on the wafer substrate, and keeping the wafer substrate in a solvent atmosphere. Improved wafer quality due to shorter exposure times results in higher yields of wafer substrates.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は本発明の一実施例を示し、第1図
は第2図のA−A線矢示断面説明図、第2図は平面図を
示す。 1 ・・・ウェハー基板、2 ・・・オーバーノズル、
3 ・・・アンダーノズル、4a、4b・・・供給孔、
5 ・・・排気孔、6 ・・・排出孔、7 ・・・レジ
スト、8 ・・・周縁部分、10・・・溶剤、11・・
・蒸気、100  ・・・レジスト除去装置。 特許出願人  シャープ株式会社
1 and 2 show one embodiment of the present invention, FIG. 1 is an explanatory cross-sectional view taken along the line A--A in FIG. 2, and FIG. 2 is a plan view. 1...Wafer substrate, 2...Over nozzle,
3...under nozzle, 4a, 4b...supply hole,
5...Exhaust hole, 6...Exhaust hole, 7...Resist, 8...Peripheral portion, 10...Solvent, 11...
・Steam, 100...Resist removal device. Patent applicant Sharp Corporation

Claims (1)

【特許請求の範囲】[Claims] (1)表面にレジストを塗布したウェハー基板の周縁部
分を包囲収容し、前記ウェハー基板のエッジ、バックに
付着したレジストを除去する溶剤を吐出する第1の供給
孔と、前記周縁部分のフォーカス基準パッド部に付着し
たレジストを除去する溶剤を供給する第2の供給孔と、
前記溶剤の排出孔と、前記溶剤の蒸気の排気孔とを有す
るノズルを設けたことを特徴とするレジスト除去装置。
(1) A first supply hole that surrounds the peripheral edge of a wafer substrate whose surface is coated with resist and discharges a solvent for removing resist attached to the edge and back of the wafer substrate, and a focus reference for the peripheral edge. a second supply hole for supplying a solvent for removing resist attached to the pad portion;
A resist removing device comprising: a nozzle having an exhaust hole for the solvent and an exhaust hole for the vapor of the solvent.
JP1298489A 1989-01-20 1989-01-20 Resist removing device Pending JPH02192717A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1298489A JPH02192717A (en) 1989-01-20 1989-01-20 Resist removing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1298489A JPH02192717A (en) 1989-01-20 1989-01-20 Resist removing device

Publications (1)

Publication Number Publication Date
JPH02192717A true JPH02192717A (en) 1990-07-30

Family

ID=11820471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1298489A Pending JPH02192717A (en) 1989-01-20 1989-01-20 Resist removing device

Country Status (1)

Country Link
JP (1) JPH02192717A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5378511A (en) * 1993-03-22 1995-01-03 International Business Machines Corporation Material-saving resist spinner and process
US5449405A (en) * 1991-10-29 1995-09-12 International Business Machines Corporation Material-saving resist spinner and process
DE19622015A1 (en) * 1996-05-31 1997-12-04 Siemens Ag Process for etching destruction zones on a semiconductor substrate edge and etching system
US7858898B2 (en) 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
US7943007B2 (en) 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
US8580078B2 (en) 2007-01-26 2013-11-12 Lam Research Corporation Bevel etcher with vacuum chuck
US10629458B2 (en) 2007-01-26 2020-04-21 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5449405A (en) * 1991-10-29 1995-09-12 International Business Machines Corporation Material-saving resist spinner and process
US5378511A (en) * 1993-03-22 1995-01-03 International Business Machines Corporation Material-saving resist spinner and process
DE19622015A1 (en) * 1996-05-31 1997-12-04 Siemens Ag Process for etching destruction zones on a semiconductor substrate edge and etching system
US5945351A (en) * 1996-05-31 1999-08-31 Siemens Aktiengesellschaft Method for etching damaged zones on an edge of a semiconductor substrate, and etching system
US7858898B2 (en) 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
US7943007B2 (en) 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
US8580078B2 (en) 2007-01-26 2013-11-12 Lam Research Corporation Bevel etcher with vacuum chuck
US8721908B2 (en) 2007-01-26 2014-05-13 Lam Research Corporation Bevel etcher with vacuum chuck
US9053925B2 (en) 2007-01-26 2015-06-09 Lam Research Corporation Configurable bevel etcher
US10629458B2 (en) 2007-01-26 2020-04-21 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US10811282B2 (en) 2007-01-26 2020-10-20 Lam Research Corporation Upper plasma-exclusion-zone rings for a bevel etcher
US10832923B2 (en) 2007-01-26 2020-11-10 Lam Research Corporation Lower plasma-exclusion-zone rings for a bevel etcher

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