JPH02186524A - Cathode for electronic tube - Google Patents
Cathode for electronic tubeInfo
- Publication number
- JPH02186524A JPH02186524A JP1002895A JP289589A JPH02186524A JP H02186524 A JPH02186524 A JP H02186524A JP 1002895 A JP1002895 A JP 1002895A JP 289589 A JP289589 A JP 289589A JP H02186524 A JPH02186524 A JP H02186524A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- electron
- oxide
- current density
- bao
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 14
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 14
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000008188 pellet Substances 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical group [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000000864 Auger spectrum Methods 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910015805 BaWO4 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はテレビジョン用ブラウン管、表示管、撮像管、
進行波管等の電子管に用いられる電子管用陰極に係り、
特に、低温で高電流密度動作の可能な電子管用陰極に関
する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to television cathode ray tubes, display tubes, image pickup tubes,
Concerning electron tube cathodes used in electron tubes such as traveling wave tubes,
In particular, the present invention relates to an electron tube cathode that can operate at low temperatures and with high current density.
電子管の高性能化、特に表示装置として用いられる電子
管の高精細度化、高輝度化をはかるために、従来のいわ
ゆる酸化物塗布形陰極に代る高電流密度陰極が要求され
ている。In order to improve the performance of electron tubes, especially to improve the definition and brightness of electron tubes used as display devices, a high current density cathode is required to replace the conventional so-called oxide coated cathode.
高電流密度陰極としては、これまでに、いわゆる含浸形
陰極が知られており、例えば特公昭第５８２６７６８号
公報記載のように、タングステン（Ｗ）またはモリブデ
ン（ＭＯ）等からなる耐熱多孔質基体を作り、該基体細
孔部内にバリウム（Ｂａ）化合物等の電子放出物質を加
熱溶融含浸させたもの、さらに、電子放出特性向上のた
めに、その表面にオスミウム（Ｏｓ）、ルテニウｌ＼（
Ｒｕ）、イリジウム（Ｉｒ）あるいはこれらの合金など
からなる薄膜被覆を設けたものが知られている。これら
は、一般には、円板状（ベレン１−）であり、これを耐
熱金属（例えば、タンタル（Ｔａ）あるいはＭｏ）から
なるカップ状の障壁層内に挿入し、さらに、耐熱性金属
（例えば、ＴａあるいはＭ ｏ ）からなるスリーブに
挿入した形の陰極とし、アルミナ（Ａｍ２０３）等で表
面を被覆したＷヒータで加熱して使用する。So-called impregnated cathodes have been known as high current density cathodes. The pores of the substrate are heated and melted and impregnated with an electron-emitting substance such as a barium (Ba) compound, and in order to improve the electron-emitting properties, osmium (Os) and ruthenium are added to the surface of the substrate.
There are known devices provided with a thin film coating made of Ru), iridium (Ir), or an alloy thereof. These are generally disc-shaped (belene 1-), inserted into a cup-shaped barrier layer made of a refractory metal (e.g. tantalum (Ta) or Mo), and then , Ta or Mo), and is used by heating it with a W heater whose surface is coated with alumina (Am203) or the like.
しかしながら、上ｎ己含浸形陰極は、高い電子放出能を
示すか、動作温度が高いという欠点を有している。すな
わち、その動作温度は約１０００℃で、現在広く用いら
れている塗布形酸化物陰極の動作温度（約７００℃）に
比較し約３００°Ｃ高い。このため、他電極とともに管
球に実装した場合、近傍電極の材料を高融点金属材料に
変更しなければならない上に、陰極からＢａ、ＢａＯが
多量に蒸発し、近傍他電極に付着してグリフ１−エミッ
ションなどの原因となり、管球特性に悪影響を与える結
果となる。However, the upper n-self-impregnated cathode has the disadvantage of exhibiting high electron emission ability or high operating temperature. That is, its operating temperature is about 1000°C, which is about 300°C higher than the operating temperature (about 700°C) of the currently widely used coated oxide cathode. For this reason, when it is mounted in a tube together with other electrodes, the material of the nearby electrode must be changed to a high melting point metal material, and a large amount of Ba and BaO evaporates from the cathode and adheres to other nearby electrodes, causing the glyph. 1- It causes emissions, etc., and results in an adverse effect on the tube characteristics.
また、該陰極を加熱するために使用するヒータも長時間
高熱に耐える必要があり、その設計に困難性があった。Further, the heater used to heat the cathode must also withstand high heat for a long period of time, making its design difficult.
本発明の目的は、上記従来技術の有していた課題を解決
して、動作温度が低く、しかも従来の含浸形陰極と同等
以十の電子放出能を有し、実用化に耐え得る電子管用陰
極を提供することにある。The purpose of the present invention is to solve the problems of the prior art described above, and to provide an electron tube that has a low operating temperature, has an electron emitting capacity equivalent to or higher than that of a conventional impregnated cathode, and is suitable for practical use. Its purpose is to provide a cathode.
−１−記目的は、従来の含浸形陰極における耐熱多孔質
基体相当部分にＷまたはＭＯもしくはこれらを含む合金
を用い、電子放出物質相当部分に１３ ａ Ｏを主成分
とする酸化物にタングステン酸スカンジウムを添加して
なる材料を用いた陰極とすることによって達成すること
かできる。-1- The purpose of the conventional impregnated cathode is to use W or MO or an alloy containing these in the portion corresponding to the heat-resistant porous substrate, and to add tungstic acid to an oxide mainly composed of 13 a O in the portion corresponding to the electron-emitting material. This can be achieved by using a cathode made of a material doped with scandium.
さらに詳しく述へれば、」１記電子放出物質相当部分か
、陰極ベレｙＩへ全体の１７〜３５容積％のＨａ Ｏを
−ｉユ成分とする酸化物、０．２５〜１０容積％のタン
グステン酸スカンジウムからなり、しかも両者の合ｉ１
を１７．２５〜４０容積％以下とした場合に顕著な効果
を示すことか、実験的検ホｊの結果、得られている。さ
らに、タングステン酸スカンジウムはＳ Ｃ７Ｗ：１０
１．２およびＳｃ、、ＷＯ，、、の中の少なくともいず
れか一つを用いた場合に効果が顕著である結果が得られ
ている。To explain in more detail, 1. The electron-emitting material corresponding to the part, or the cathode beret 17 to 35% by volume of the oxide containing HaO as the component, and 0.25 to 10% by volume of tungsten. consisting of scandium acid, and the sum of both i1
As a result of experimental tests, it has been found that a remarkable effect is exhibited when the content is 17.25 to 40% by volume or less. Furthermore, scandium tungstate is SC7W:10
Results have been obtained in which the effect is significant when at least one of the following is used: 1.2 and Sc, WO, .
上記において、電子放出物質相当部の一成分として用い
たタングステン酸スカンジウムの役割は、陰極表面に電
子放出仕事関数の小さい（Ｂａ、Ｓｃ、Ｏ）単分子層を
形成することにある。In the above, the role of scandium tungstate used as a component of the electron-emitting substance equivalent part is to form a monomolecular layer (Ba, Sc, O) with a small electron-emitting work function on the surface of the cathode.
以下、ＢａＯを主成分とする酸化物として１３ ａ３Ａ
ｎ２０６を、タングステン酸スカンジウムとして５ｃ２
Ｗ３０□２を、耐熱多孔質基体相当部としてＷを選んだ
場合の（Ｂａ、Ｓｃ、Ｏ）単分子層形成の内容について
具体的に説明する。Hereinafter, 13 a3A is used as an oxide whose main component is BaO.
n206 as scandium tungstate 5c2
The details of forming a (Ba, Sc, O) monomolecular layer when W30□2 is selected as W as the heat-resistant porous substrate-equivalent portion will be specifically described.
まず、ヒータ・オンによる陰極の加熱によって、Ｂａ３
Ａｎ、Ｏ，とＷとが反応して、下式によりＢａを生成す
る。First, by heating the cathode by turning on the heater, Ba3
An, O, and W react to produce Ba according to the following formula.
２Ｂａ、ＡＤ４０．＋Ｗ−）ＢａＷＯ４＋２ＢａｊＶ、
、０４＋３Ｂａ −（１）ここで生成したＢａの一部
は陰極表面に拡散し、他の一部はＳ ｃ２ Ｗ ３０□
２と反応して、下式によりＳｃを生成する。2Ba, AD40. +W-)BaWO4+2BajV,
, 04+3Ba - (1) Part of the Ba generated here diffuses to the cathode surface, and the other part is S c2 W 30□
2 to produce Sc according to the following formula.
Ｓｒ、、Ｗ３０１□＋３Ｂａ →３ＢａＷＯ４＋２Ｓｃ
−−−（２）（２）式で生成したＳｃもまた陰極表
面に拡散し。Sr,, W301□+3Ba →3BaWO4+2Sc
---(2) Sc generated in equation (2) also diffuses onto the cathode surface.
（１）式によるＢａ、雰囲気中あるいは陰極内部からの
酸素（０）とともに（Ｂａ、 Ｓｃ、○）単分子層を形
成する。この咀分子層は電子放出仕事関数が小さく （
約］、２ｅＶ）、高い電子放出能を有し、結果的に動作
温度を低くすることが可能である。Ba according to the formula (1) forms a monomolecular layer (Ba, Sc, ○) together with oxygen (0) from the atmosphere or from inside the cathode. This molecular layer has a small electron emission work function (
], 2 eV), it has a high electron emission ability, and as a result, it is possible to lower the operating temperature.
（従来の含浸形陰極の場合、Ｏｓ、Ｒｕ、Ｉｒ等の薄膜
を有する陰極および該薄膜を有しない陰極の電子放出仕
事関数の値は、それぞれ、１．６〜１．７ｅＶおよび約
２ｅＶである）。(In the case of conventional impregnated cathodes, the electron emission work function values of the cathode with a thin film of Os, Ru, Ir, etc. and the cathode without such a thin film are 1.6 to 1.7 eV and about 2 eV, respectively. ).
添加する５ｃ２Ｗ３０□２は少量であっても効果がある
が、陰極寿命を考慮した場合、前記のように、０．２５
〜］０容積％の量が望ましい。また、Ｂａ３Ａｎ２０６
の量も、陰極構体の強度を考慮し、また、Ｂａ、ＢａＯ
の蒸発を抑制し、かつ、陰極寿命を考慮した場合、前記
のように、１７〜３５容積％が望ましい値となる。5c2W30□2 to be added is effective even in small amounts, but when considering the cathode life, as mentioned above, 0.25
~ ] 0% by volume is desirable. Also, Ba3An206
The amount of Ba, BaO
In order to suppress the evaporation of carbon dioxide and take into account the life of the cathode, a desirable value is 17 to 35% by volume, as described above.
以下、本発明の電子管用陰極について、実施例によって
具体的に説明する。EXAMPLES Hereinafter, the cathode for an electron tube of the present invention will be specifically explained using Examples.
第１−図は、本発明電子管用陰極の一実施例の構成を示
す一部断面側面図で、まず、Ｗ粉末の焼結により作製し
た空孔率２５％の多孔質Ｗ基体］−に、組成４Ｂａ○・
Ａｌｌ、、０３・ＣａＯからなる利料とＳｃ、Ｗ、０，
２とを容積比４：］で混合した電子放出物質を、水素雰
囲気中で溶融含浸させて陰極ベレン１−４を作製し、次
いで、該ペレッ１〜４をＴａからなるカップ状の障壁層
５に挿入、さらにこれをＴａからなる円筒スリーブ６に
挿入した後、レーザ溶接によって固定して陰極を作製し
た。なお、」１記５ｃ２Ｗ３０，２は５ｃ２０３粉末と
Ｗ○３粉末とをモル比］：３で混合し、大気中１１００
℃］時間の加熱処理によって作製したものを用いた。Figure 1 is a partially cross-sectional side view showing the structure of an embodiment of the cathode for an electron tube of the present invention. Composition 4Ba○・
All, 03・Interest consisting of CaO and Sc, W, 0,
The cathode berene 1-4 was prepared by melting and impregnating an electron emitting material mixed with 2 and 2 at a volume ratio of 4:] in a hydrogen atmosphere, and then the pellets 1 to 4 were placed in a cup-shaped barrier layer 5 made of Ta. This was further inserted into a cylindrical sleeve 6 made of Ta, and then fixed by laser welding to produce a cathode. In addition, 5c2W30,2 in 1. is prepared by mixing 5c203 powder and W○3 powder at a molar ratio of 1100% in the atmosphere.
A sample prepared by heat treatment for [°C] hours was used.
上記によって得られた陰極はアルミナ（ＡＬ○３）を被
覆したＷ線からなる加熱用ヒータ７と組合せて使用され
るが、陰極の電子放出特性は、〜１Ｏ−７Ｐａの高真空
中で、陽極−陰極からなる２極管方式の構成において両
極間にパルス電圧を印加し、その時放出される電流を求
めることによって求め、その評価は、電圧−放出電流の
関係から外挿して得られる零電界における飽和電流密度
と陰極温度との関係を求めることによって行った。第２
図は、本発明の陰極の特性９を、現在実用化されている
Ｏ８被覆含浸形陰極の特性１０とを比較して示した図で
、この結果から、例えばＩＯＡ／ｃｍ２の飽和電流密度
を得るに必要な陰極動作温度は、Ｏ５被覆含浸形陰極の
場合約１０００°Ｃであるのに対して、本発明構成の陰
極の場合約８００〜８５０℃の範囲にあり、動作温度を
１５０〜２００°Ｃ低くできることがわかる。The cathode obtained above is used in combination with a heating heater 7 made of a W wire coated with alumina (AL○3), but the electron emission characteristics of the cathode are such that the anode - In a diode configuration consisting of a cathode, a pulse voltage is applied between both poles and the current emitted at that time is determined.The evaluation is based on the zero electric field obtained by extrapolating from the voltage-emission current relationship. This was done by determining the relationship between saturation current density and cathode temperature. Second
The figure shows a comparison of characteristic 9 of the cathode of the present invention with characteristic 10 of the O8-coated impregnated cathode currently in practical use. From this result, for example, the saturation current density of IOA/cm2 can be obtained. The cathode operating temperature required for this is approximately 1000°C for the O5-coated impregnated cathode, while it is approximately 800-850°C for the cathode constructed according to the present invention, and the operating temperature is 150-200°C. It can be seen that C can be lowered.
また、第３図は、本発明陰極表面についてオージェ分析
を行った場合のオージェ・スペクトルを示した図で、こ
の結果から、陰極表面に（＋３ ａ、Ｓｃ、０）単分子
層が形成されていることがわかる。Furthermore, Fig. 3 is a diagram showing the Auger spectrum obtained when Auger analysis was performed on the surface of the cathode of the present invention. From this result, it was found that a (+3 a, Sc, 0) monomolecular layer was formed on the cathode surface. I know that there is.
なお、電子放出相当部のＢａＯを主成分とする酸化物お
よびタングステン酸スカンジウムの量を若Ｆ変動させた
場合にも初期の電子放出特性に影響が認められず、寿命
試験においても、５０００時間程度まで影響は認められ
なかった。しかし、さらに長時間の試験において、寿命
はｉ３ａ○を主成分とする酸化物の址、タングステン酸
スカンジウムの量およびその合計量に依存し、それぞれ
を前出の範囲の量とした場合に、電子放出特性を長時間
にわたって維持できることが知られた。Furthermore, even when the amounts of BaO-based oxide and scandium tungstate in the electron-emitting portion were varied by F, no effect was observed on the initial electron-emitting characteristics, and even in a life test, it was confirmed that No effect was observed until now. However, in a longer test, the lifespan depends on the amount of oxide containing i3a○ as the main component, the amount of scandium tungstate, and the total amount thereof. It is known that the release characteristics can be maintained for a long time.
また、本発明の陰極を用いた場合、グリッドエミッショ
ンの発生に起因する管球特性の劣化はみられなかった。Further, when the cathode of the present invention was used, no deterioration of the tube characteristics due to the occurrence of grid emission was observed.
これは、本発明陰極の場合、従来の含浸形陰極の場合よ
りも、動作温度を１５０〜２００℃下げることができる
ことから、陰極からのＢａおよびＢａＯの蒸発速度を１
．５〜２桁程度低く抑えることができることによるもの
である。また、陰極動作温度を下げ得ることから、陰極
加熱用ヒータとして、従来の塗布形酸化物陰極用のヒー
タをそのまま利用できることとなり、ヒータの信頼度を
保つことができる。In the case of the cathode of the present invention, the operating temperature can be lowered by 150 to 200°C than in the case of the conventional impregnated cathode, so the evaporation rate of Ba and BaO from the cathode can be reduced by 1.
．． This is because it can be kept low by about 5 to 2 orders of magnitude. Furthermore, since the cathode operating temperature can be lowered, a conventional heater for coated oxide cathodes can be used as is as a heater for heating the cathode, and the reliability of the heater can be maintained.
なお、上記例においては、焼結によって作成した多孔質
Ｗ基体に、ＢａＯを主成分とする酸化物とタングステン
酸スカンジウ１１との混合体を溶融含浸して作製したベ
レン１−を用いた陰極の場合について述べてきたが、Ｗ
粉末と、ＢａＯを主成分とする酸化物粉末とタングステ
ン酸スカンジウム粉末とを混合し、プレス成形によって
一体化した後、非酸化性あるいは還元性の雰囲気中で加
熱・固化したペレッ１〜を用いた陰極についても、全く
同様の結果が得られている。In the above example, a cathode using belene 1-, which was prepared by melting and impregnating a porous W substrate prepared by sintering with a mixture of an oxide whose main component is BaO and scandiyl tungstate 11, was used. I have talked about the case, but W
Pellets 1 to 1 were prepared by mixing the powder, an oxide powder containing BaO as a main component, and scandium tungstate powder, integrating the mixture by press molding, and then heating and solidifying it in a non-oxidizing or reducing atmosphere. Exactly the same results were obtained for the cathode.
以上述へてきたように、高電流密度を要求される電子管
用陰極において、本発明構成の陰極とすることによって
、従来の含浸形陰極の有していた課題を解決して、低動
作温度で、しかも、高電流密度の電子流を安定して得る
ことのできる電子管用陰極を提供することができた。As mentioned above, by using the cathode of the present invention for electron tube cathodes that require high current density, the problems of conventional impregnated cathodes can be solved and the cathodes can be operated at low operating temperatures. Moreover, it has been possible to provide a cathode for an electron tube that can stably obtain an electron flow with a high current density.
第１図は本発明の電子管用陰極の一実施例の構成を示す
一部断面側面図、第２図は本発明電子管用陰極と従来の
含浸形陰極との電子放出特性（陰極温度と零電界におけ
る飽和電流密度との関係）の比較を示す図、第３図は本
発明電子管用陰極表ｍｌについてオージェ分析を行った
場合のオージェ・スペク１〜ル図である。
１ 耐熱多孔性基体（Ｗ）
２− Ｂ ａ○を主成分とする酸化物（Ｂ ａ３Ａ（Ｌ
２０ ｅ ）タングステン酸スカンジウム（ＳＣ７Ｗ、
＋０＋２）ペレッ１〜 ５・・障壁層（Ｔ ａ
）スリーブ（Ｔａ） ７ 加熱用ヒータ（Ｂａ、
Ｓｃ、Ｏ）単分子層
本発明電子管用陰極の特性
Ｏ８被覆含浸形陰極の特性FIG. 1 is a partially sectional side view showing the configuration of an embodiment of the cathode for an electron tube of the present invention, and FIG. FIG. 3 is an Auger spectrum diagram when Auger analysis is performed on ml of the cathode surface for an electron tube of the present invention. 1 Heat-resistant porous substrate (W) 2- Oxide whose main component is Ba○ (Ba3A(L
20e) Scandium tungstate (SC7W,
+0+2) Pellet 1 to 5...Barrier layer (T a
) Sleeve (Ta) 7 Heating heater (Ba,
Sc, O) Monomolecular layer Characteristics of the cathode for electron tubes of the present invention Characteristics of the O8 coated impregnated cathode
Claims (1)
くはこれらを含む合金と酸化バリウム（ＢａＯ）を主成
分とする酸化物とタングステン酸スカンジウムとからな
るペレットを電子放出体とすることを特徴とする電子管
用陰極。 ２、上記ペレットが、ＢａＯを主成分とする酸化物１７
〜３５容積％、タングステン酸スカンジウム０．２５〜
１０容積％、残部をＷまたはＭｏもしくはこれらを含む
合金とするペレットであることを特徴とする特許請求の
範囲第１項記載の電子管用陰極。[Claims] 1. An electron emitter is a pellet made of tungsten (W) or molybdenum (Mo) or an alloy containing these, an oxide whose main component is barium oxide (BaO), and scandium tungstate. A cathode for electron tubes featuring: 2. The above pellet is an oxide 17 whose main component is BaO
~35% by volume, scandium tungstate 0.25~
2. The cathode for an electron tube according to claim 1, wherein the cathode is a pellet containing 10% by volume and the remainder being W, Mo, or an alloy containing these.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1002895A JPH02186524A (en) | 1989-01-11 | 1989-01-11 | Cathode for electronic tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1002895A JPH02186524A (en) | 1989-01-11 | 1989-01-11 | Cathode for electronic tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02186524A true JPH02186524A (en) | 1990-07-20 |
Family
ID=11542092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1002895A Pending JPH02186524A (en) | 1989-01-11 | 1989-01-11 | Cathode for electronic tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02186524A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154131A (en) * | 1982-03-10 | 1983-09-13 | Hitachi Ltd | Impregnation type cathode |
-
1989
- 1989-01-11 JP JP1002895A patent/JPH02186524A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154131A (en) * | 1982-03-10 | 1983-09-13 | Hitachi Ltd | Impregnation type cathode |
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