JPH02181977A - Compound semiconductor - Google Patents

Compound semiconductor

Info

Publication number
JPH02181977A
JPH02181977A JP248089A JP248089A JPH02181977A JP H02181977 A JPH02181977 A JP H02181977A JP 248089 A JP248089 A JP 248089A JP 248089 A JP248089 A JP 248089A JP H02181977 A JPH02181977 A JP H02181977A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
deposited
film
up
type
sputter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP248089A
Inventor
Shoji Morita
Yuichiro Murakami
Yoshimichi Yonekura
Original Assignee
Mitsubishi Heavy Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/541CuInSe2 material PV cells

Abstract

PURPOSE: To enable a multicomponent compound semiconductor multilayer film to be deposited over a large area by the use of a simple apparatus, by combining a sputtering process with another process.
CONSTITUTION: A crystalline transparent electrode 10 is deposited on a glass substrate 1. Then, an N-type CdS (sputter film, up to 0.5μm) 21, a P-type CulnSe2 (sputter film, up to 0.5μm) 31 and a P-type CulnSe2 (flash deposit film, up to 2μm) 30 are deposited sequentially in that order to provide a compound semiconductor multilayer film. Then, an aluminum electrode 40 is deposited by a PVD process such as sputtering or vapor deposition. The sputter films 21, 31 are deposited by a sputtering process utilizing high-frequency discharge within an atmosphere of Ar under 2×10-2Torr under the conditions that a ratio of RF power to target area is about 1.3W/cm2 and a substrate temperature is 300°C. The deposit films 20, 30 are deposited on the substrate with a substrate temperature of 200°C by supplying powder of material compound intermittently to a crucible heated to 1700°C or over to evaporate the same in a flash.
COPYRIGHT: (C)1990,JPO&Japio
JP248089A 1989-01-09 1989-01-09 Compound semiconductor Pending JPH02181977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP248089A JPH02181977A (en) 1989-01-09 1989-01-09 Compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP248089A JPH02181977A (en) 1989-01-09 1989-01-09 Compound semiconductor

Publications (1)

Publication Number Publication Date
JPH02181977A true true JPH02181977A (en) 1990-07-16

Family

ID=11530510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP248089A Pending JPH02181977A (en) 1989-01-09 1989-01-09 Compound semiconductor

Country Status (1)

Country Link
JP (1) JPH02181977A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008527735A (en) * 2005-01-12 2008-07-24 イン−ソーラー テク カンパニー リミテッド Light solar cell absorber layer and a manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008527735A (en) * 2005-01-12 2008-07-24 イン−ソーラー テク カンパニー リミテッド Light solar cell absorber layer and a manufacturing method thereof
JP4870094B2 (en) * 2005-01-12 2012-02-08 イン−ソーラー テク カンパニー リミテッド Light solar cell absorber layer and a manufacturing method thereof

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