JPH021778A - 半導体の表面保護又は層間絶縁用酸化物被膜形成用塗布液および酸化物被膜の製造法 - Google Patents
半導体の表面保護又は層間絶縁用酸化物被膜形成用塗布液および酸化物被膜の製造法Info
- Publication number
- JPH021778A JPH021778A JP1022041A JP2204189A JPH021778A JP H021778 A JPH021778 A JP H021778A JP 1022041 A JP1022041 A JP 1022041A JP 2204189 A JP2204189 A JP 2204189A JP H021778 A JPH021778 A JP H021778A
- Authority
- JP
- Japan
- Prior art keywords
- film
- coating liquid
- oxide film
- solution
- coating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 30
- 239000011248 coating agent Substances 0.000 title claims abstract description 29
- 239000007788 liquid Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- -1 silane compound Chemical class 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910000077 silane Inorganic materials 0.000 claims abstract description 14
- 238000009833 condensation Methods 0.000 claims abstract description 10
- 230000005494 condensation Effects 0.000 claims abstract description 10
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 9
- 125000003118 aryl group Chemical group 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 7
- 239000003054 catalyst Substances 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 229910052788 barium Inorganic materials 0.000 claims abstract description 4
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 4
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 4
- 229910052796 boron Inorganic materials 0.000 claims abstract description 3
- 239000011777 magnesium Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 239000000376 reactant Substances 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract description 18
- 230000007062 hydrolysis Effects 0.000 abstract description 9
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 9
- 235000006408 oxalic acid Nutrition 0.000 abstract description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 4
- 239000007795 chemical reaction product Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000011229 interlayer Substances 0.000 abstract description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 abstract 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 150000004756 silanes Chemical class 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 235000019441 ethanol Nutrition 0.000 description 4
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000001588 bifunctional effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007809 chemical reaction catalyst Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1212—Zeolites, glasses
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Paints Or Removers (AREA)
- Silicon Polymers (AREA)
- Local Oxidation Of Silicon (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1022041A JPH021778A (ja) | 1988-02-02 | 1989-01-31 | 半導体の表面保護又は層間絶縁用酸化物被膜形成用塗布液および酸化物被膜の製造法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2237088 | 1988-02-02 | ||
JP63-22370 | 1988-02-02 | ||
JP1022041A JPH021778A (ja) | 1988-02-02 | 1989-01-31 | 半導体の表面保護又は層間絶縁用酸化物被膜形成用塗布液および酸化物被膜の製造法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH021778A true JPH021778A (ja) | 1990-01-08 |
JPH0559154B2 JPH0559154B2 (de) | 1993-08-30 |
Family
ID=12080747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1022041A Granted JPH021778A (ja) | 1988-02-02 | 1989-01-31 | 半導体の表面保護又は層間絶縁用酸化物被膜形成用塗布液および酸化物被膜の製造法 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0327311B1 (de) |
JP (1) | JPH021778A (de) |
DE (1) | DE68918124T2 (de) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02258839A (ja) * | 1989-03-31 | 1990-10-19 | Fuji Xerox Co Ltd | 無機・有機複合材料の製造方法 |
JPH02258840A (ja) * | 1989-03-31 | 1990-10-19 | Fuji Xerox Co Ltd | 半導電性重合体組成物 |
JPH02258842A (ja) * | 1989-03-31 | 1990-10-19 | Fuji Xerox Co Ltd | 半導電性重合体組成物 |
JPH02258841A (ja) * | 1989-03-31 | 1990-10-19 | Fuji Xerox Co Ltd | 無機・有機複合材料の製造方法 |
JPH04230029A (ja) * | 1990-06-13 | 1992-08-19 | Wacker Chemitronic Ges Elektron Grundstoffe Mbh | 研磨シリコンウエーハの貯蔵安定性表面を製造する方法 |
US5340373A (en) * | 1992-02-18 | 1994-08-23 | Canon Kabushiki Kaisha | Method for producing optical element by press molding a blank having a component removed layer and a hydrocarbon coating |
KR20070108658A (ko) * | 2006-05-08 | 2007-11-13 | 유영선 | 반도체 장치의 절연막 형성용 도포액 조성물의 제조방법 및제조된 도포액 조성물 |
JP2009545649A (ja) * | 2006-08-04 | 2009-12-24 | ダウ・コーニング・コーポレイション | シリコーン樹脂およびシリコーン組成物 |
JP4499907B2 (ja) * | 2000-12-07 | 2010-07-14 | 富士化学株式会社 | 無機高分子化合物の製造方法、無機高分子化合物、および無機高分子化合物膜 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE1008162A5 (fr) * | 1989-09-27 | 1996-02-06 | Air Prod & Chem | Produits manufactures carbones et procede pour les produire. |
DE4225106C2 (de) * | 1992-07-30 | 1995-10-05 | Heraeus Kulzer Gmbh | Verfahren und Vorrichtung zur Herstellung eines Metall-Kunststoff-Verbundes |
WO1996000758A1 (en) * | 1994-06-30 | 1996-01-11 | Hitachi Chemical Company, Ltd. | Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device |
DE19714949A1 (de) * | 1997-04-10 | 1998-10-15 | Inst Neue Mat Gemein Gmbh | Verfahren zum Versehen einer metallischen Oberfläche mit einer glasartigen Schicht |
US7015061B2 (en) * | 2004-08-03 | 2006-03-21 | Honeywell International Inc. | Low temperature curable materials for optical applications |
US20060057418A1 (en) | 2004-09-16 | 2006-03-16 | Aeromet Technologies, Inc. | Alluminide coatings containing silicon and yttrium for superalloys and method of forming such coatings |
US9133718B2 (en) | 2004-12-13 | 2015-09-15 | Mt Coatings, Llc | Turbine engine components with non-aluminide silicon-containing and chromium-containing protective coatings and methods of forming such non-aluminide protective coatings |
ES2368436T3 (es) * | 2004-12-13 | 2011-11-17 | Mt Coatings, Llc | Componentes de motor de turbina con revestimientos protectores sin aluminuro que contienen silicio y cromo y métodos para formar dichos revestimientos protectores sin aluminuro. |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
RU2444540C1 (ru) * | 2010-10-21 | 2012-03-10 | Общество с ограниченной ответственностью "Пента-91" | Способ получения полиметаллосилоксанов |
WO2012094450A1 (en) * | 2011-01-05 | 2012-07-12 | Dow Corning Corporation | Polyheterosiloxanes for high refractive index materials |
RU2453550C1 (ru) * | 2011-03-09 | 2012-06-20 | Федеральное государственное унитарное предприятие "Государственный ордена Трудового Красного Знамени научно-исследовательский институт химии и технологии элементоорганических соединений" (ФГУП ГНИИХТЭОС) | Способ получения иттрийсодержащих органоалюмоксансилоксанов, связующие и пропиточные композиции на их основе |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
GB2496708A (en) * | 2011-11-17 | 2013-05-22 | Dow Corning | Solvent-borne scratch resistant coating compositions containing polymetallosiloxanes |
JP6015389B2 (ja) | 2012-11-30 | 2016-10-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
EP3194502A4 (de) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Polysiloxanformulierungen und beschichtungen für optoelektronische anwendungen |
CN110289204B (zh) * | 2018-03-19 | 2023-08-15 | 株式会社理光 | 氧化物绝缘体膜形成用涂布液 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5534276A (en) * | 1978-09-04 | 1980-03-10 | Tokyo Denshi Kagaku Kabushiki | Preparation of coating liquid for silica-based film formation |
JPS5638472A (en) * | 1979-09-06 | 1981-04-13 | Tokyo Denshi Kagaku Kabushiki | Formation of silica coating |
JPS60258477A (ja) * | 1984-06-02 | 1985-12-20 | Nippon Steel Corp | 珪素鋼板の絶縁皮膜の形成方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3847583A (en) * | 1969-08-13 | 1974-11-12 | Jenaer Glaswerk Schott & Gen | Process for the manufacture of multi-component substances |
FR2123652A5 (de) * | 1970-02-19 | 1972-09-15 | Ibm | |
IN152814B (de) * | 1978-08-08 | 1984-04-14 | Westinghouse Electric Corp | |
US4318939A (en) * | 1980-08-21 | 1982-03-09 | Western Electric Co., Incorporated | Stabilized catalyzed organopolysiloxanes |
-
1989
- 1989-01-31 EP EP19890300927 patent/EP0327311B1/de not_active Expired - Lifetime
- 1989-01-31 JP JP1022041A patent/JPH021778A/ja active Granted
- 1989-01-31 DE DE1989618124 patent/DE68918124T2/de not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5534276A (en) * | 1978-09-04 | 1980-03-10 | Tokyo Denshi Kagaku Kabushiki | Preparation of coating liquid for silica-based film formation |
JPS5638472A (en) * | 1979-09-06 | 1981-04-13 | Tokyo Denshi Kagaku Kabushiki | Formation of silica coating |
JPS60258477A (ja) * | 1984-06-02 | 1985-12-20 | Nippon Steel Corp | 珪素鋼板の絶縁皮膜の形成方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02258839A (ja) * | 1989-03-31 | 1990-10-19 | Fuji Xerox Co Ltd | 無機・有機複合材料の製造方法 |
JPH02258840A (ja) * | 1989-03-31 | 1990-10-19 | Fuji Xerox Co Ltd | 半導電性重合体組成物 |
JPH02258842A (ja) * | 1989-03-31 | 1990-10-19 | Fuji Xerox Co Ltd | 半導電性重合体組成物 |
JPH02258841A (ja) * | 1989-03-31 | 1990-10-19 | Fuji Xerox Co Ltd | 無機・有機複合材料の製造方法 |
JPH04230029A (ja) * | 1990-06-13 | 1992-08-19 | Wacker Chemitronic Ges Elektron Grundstoffe Mbh | 研磨シリコンウエーハの貯蔵安定性表面を製造する方法 |
US5340373A (en) * | 1992-02-18 | 1994-08-23 | Canon Kabushiki Kaisha | Method for producing optical element by press molding a blank having a component removed layer and a hydrocarbon coating |
JP4499907B2 (ja) * | 2000-12-07 | 2010-07-14 | 富士化学株式会社 | 無機高分子化合物の製造方法、無機高分子化合物、および無機高分子化合物膜 |
KR20070108658A (ko) * | 2006-05-08 | 2007-11-13 | 유영선 | 반도체 장치의 절연막 형성용 도포액 조성물의 제조방법 및제조된 도포액 조성물 |
JP2009545649A (ja) * | 2006-08-04 | 2009-12-24 | ダウ・コーニング・コーポレイション | シリコーン樹脂およびシリコーン組成物 |
Also Published As
Publication number | Publication date |
---|---|
EP0327311A3 (en) | 1990-08-01 |
DE68918124T2 (de) | 1995-02-23 |
DE68918124D1 (de) | 1994-10-20 |
JPH0559154B2 (de) | 1993-08-30 |
EP0327311B1 (de) | 1994-09-14 |
EP0327311A2 (de) | 1989-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH021778A (ja) | 半導体の表面保護又は層間絶縁用酸化物被膜形成用塗布液および酸化物被膜の製造法 | |
US5547703A (en) | Method of forming si-o containing coatings | |
JP3298990B2 (ja) | シリカ含有セラミックコーティングの形成方法 | |
JPS63178532A (ja) | 珪酸エステルおよび金属酸化物から多層セラミック被膜を形成する方法 | |
JPH03183675A (ja) | 不活性ガス雰囲気下の気密基板コーティング法 | |
JPS63155624A (ja) | 多層セラミック被膜の形成方法 | |
JPH06103690B2 (ja) | 基材上にセラミックコーティングを形成する方法 | |
JP2003512390A (ja) | フルオロシルセスキオキサン膜の堆積 | |
JPS6346095B2 (de) | ||
US5445894A (en) | Ceramic coatings | |
JPH04300678A (ja) | 逆方向熱分解処理 | |
JP3919862B2 (ja) | 低誘電率シリカ質膜の形成方法及び同シリカ質膜 | |
JPH0410418A (ja) | 半導体装置 | |
US5271768A (en) | Coating for forming an oxide coating | |
JP3939408B2 (ja) | 低誘電率シリカ質膜 | |
JP2002201415A (ja) | シリカ系被膜形成用塗布液、シリカ系被膜の製造方法及び半導体装置 | |
JPH06293879A (ja) | 酸化物被膜形成用塗布液および酸化物被膜の製造法 | |
JPH05214296A (ja) | 酸化物被膜形成用塗布液および酸化物被膜の製造法 | |
JPS6150903B2 (de) | ||
JPH07173434A (ja) | 酸化物被膜形成用塗布液および酸化物被膜の製造法 | |
JP2000336312A (ja) | シリカ系被膜形成用塗布液、シリカ系被膜の製造法及び半導体装置 | |
JP2001262062A (ja) | シリカ系被膜形成用塗布液、シリカ系被膜の製造法、シリカ系被膜、これを用いた半導体素子及び多層配線板 | |
JPH06172709A (ja) | 酸化物被膜形成用塗布液および酸化物被膜の製造法 | |
JPS62106968A (ja) | コ−テイング用組成物 | |
JPS6155164A (ja) | シリカ被膜の形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070830 Year of fee payment: 14 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080830 Year of fee payment: 15 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090830 Year of fee payment: 16 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090830 Year of fee payment: 16 |