JPH02173929A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPH02173929A JPH02173929A JP32964188A JP32964188A JPH02173929A JP H02173929 A JPH02173929 A JP H02173929A JP 32964188 A JP32964188 A JP 32964188A JP 32964188 A JP32964188 A JP 32964188A JP H02173929 A JPH02173929 A JP H02173929A
- Authority
- JP
- Japan
- Prior art keywords
- film
- storage medium
- magnetic storage
- thin film
- medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 31
- 239000010408 film Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 230000001050 lubricating effect Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims description 15
- 150000003377 silicon compounds Chemical class 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000006068 polycondensation reaction Methods 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 125000001841 imino group Chemical group [H]N=* 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 125000000524 functional group Chemical group 0.000 claims description 3
- 239000010702 perfluoropolyether Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000000314 lubricant Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 238000012643 polycondensation polymerization Methods 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000003575 carbonaceous material Substances 0.000 abstract 2
- 230000035939 shock Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- 238000007598 dipping method Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 150000004665 fatty acids Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910001096 P alloy Inorganic materials 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- GUOONOJYWQOJJP-DCMFLLSESA-N n-[(2s,3r)-3-hydroxy-1-phenyl-4-[[3-(trifluoromethoxy)phenyl]methylamino]butan-2-yl]-3-[methyl(methylsulfonyl)amino]-5-[(2r)-2-(4-methyl-1,3-thiazol-2-yl)pyrrolidine-1-carbonyl]benzamide Chemical compound C1([C@H]2CCCN2C(=O)C=2C=C(C=C(C=2)N(C)S(C)(=O)=O)C(=O)N[C@@H](CC=2C=CC=CC=2)[C@H](O)CNCC=2C=C(OC(F)(F)F)C=CC=2)=NC(C)=CS1 GUOONOJYWQOJJP-DCMFLLSESA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- XULSCZPZVQIMFM-IPZQJPLYSA-N odevixibat Chemical compound C12=CC(SC)=C(OCC(=O)N[C@@H](C(=O)N[C@@H](CC)C(O)=O)C=3C=CC(O)=CC=3)C=C2S(=O)(=O)NC(CCCC)(CCCC)CN1C1=CC=CC=C1 XULSCZPZVQIMFM-IPZQJPLYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus compound Chemical class 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000004671 saturated fatty acids Chemical class 0.000 description 1
- 235000003441 saturated fatty acids Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Lubricants (AREA)
- Paints Or Removers (AREA)
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は非磁性基板状に強五f1性金属薄膜を設けて成
る磁気記憶媒体に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a magnetic storage medium comprising a strong penta-f1 metal thin film provided on a non-magnetic substrate.
[従来の技術〕
金属媒体を有する磁気記憶媒体では、磁気へ、ンドとの
接触に十分耐えつる機械的信頼性を有することが必要不
可欠である。[Prior Art] It is essential for a magnetic storage medium having a metal medium to have mechanical reliability sufficient to withstand contact with a magnetic field.
磁気記憶媒体はドライブ構成の簡略化により、コンタク
ト・スタート・ストップ方式(以下C5S方式と略す)
の機構が採用され、更に磁気記録面の保護のため、磁気
記録面以外のシツビングゾ−ンの同一トラックで、C8
Sが行われる場合が多い。The magnetic storage medium has a contact start-stop method (hereinafter abbreviated as C5S method) due to a simplified drive configuration.
In addition, in order to protect the magnetic recording surface, the C8
S is often performed.
また、磁気記録の高密度化にともない磁気ヘッドもフェ
ライトミニモノリシックヘッドから、コンポジットヘッ
ド、薄膜ヘッドと変わり、スライダー材の硬度が増加し
磁気記憶媒体の保護膜の耐久性の向上が求められている
。In addition, as magnetic recording density increases, magnetic heads are changing from ferrite mini-monolithic heads to composite heads and thin film heads, and as the hardness of slider materials increases, there is a need to improve the durability of the protective film of magnetic storage media. .
従来、金属61主性媒体の表面に飽和脂肪酸等の有機潤
滑層を設ける方法(特公昭56−30609号)脂肪酸
アミドとリン系化合物の混合潤滑層を設ける方法(特公
昭59−165238)高級脂肪酸と脂肪酸金属塩の混
合潤滑層を設ける方法(特公昭59−177728)等
があるが、硬度の高いスライダーを有する磁気ヘッドで
のC8Sでは摩擦係数の上昇、クラッシュの問題がある
。Conventionally, there have been methods for providing an organic lubricating layer such as saturated fatty acids on the surface of a metal 61-based medium (Japanese Patent Publication No. 56-30609) and a method for providing a mixed lubricating layer of fatty acid amide and phosphorus compound (Japanese Patent Publication No. 59-165238) for higher fatty acids. There is a method of providing a mixed lubricating layer of a fatty acid metal salt (Japanese Patent Publication No. 59-177728), but C8S with a magnetic head having a highly hard slider has problems such as an increase in the coefficient of friction and crashes.
潤滑層と保護膜層との両方の特性を示す炭素質膜(特公
昭54−33521)(特開昭53−143206)(
特開昭56−41524)は、C8S時に傷が入らず磁
気ヘッドの衝撃を緩衝するため、磁気特性の劣化も見ら
れないが、硬度の高いスライダーを有する磁気ヘッドで
のC8Sでは、C3S回数の増加につれ炭素質膜が削れ
摩擦係数が増大するという問題を有していた。Carbonaceous film exhibiting the characteristics of both a lubricating layer and a protective film layer (Japanese Patent Publication No. 54-33521) (Japanese Patent Publication No. 53-143206) (
Japanese Patent Application Laid-Open No. 56-41524) does not cause scratches during C8S and buffers the impact of the magnetic head, so there is no deterioration in magnetic properties. However, in C8S with a magnetic head with a highly hard slider, There was a problem in that as the carbonaceous film increased, the carbonaceous film was scraped and the coefficient of friction increased.
〔発明が解決しようとする課題]
上述のごと〈従来技術では硬度の高いスライダーを有す
る磁気ヘッドとのC8Sでは十分な機械的信頼性が得ら
れず摩擦係数の上昇を押さえることができなかった。[Problems to be Solved by the Invention] As mentioned above, in the prior art, sufficient mechanical reliability could not be obtained in C8S with a magnetic head having a highly hard slider, and an increase in the coefficient of friction could not be suppressed.
そこで本発明はこの様な問題点を解決するもので、その
目的とするところは硬度の高いスライダーを有する磁気
ヘッドでのC8Sでも強5n性金属媒体に機械的ダメー
ジを与λず、かつ摩擦係数も増加しない磁気記憶媒体を
提供することである。The present invention is intended to solve these problems, and its purpose is to avoid mechanical damage to a strong 5n metal medium even in C8S in a magnetic head with a highly hard slider, and to reduce the coefficient of friction. It is an object of the present invention to provide a magnetic storage medium that does not increase
[課題を解決するための手段1
本発明の磁気記憶媒体は、非磁性基板上に形成された強
m性金属媒体上に、炭化物および炭素の物質より成る薄
膜と滑性酸化物が被覆され、次に硅素化合物の重縮合膜
が被覆され、更にフッ化有機物を被覆せしめたことを特
徴とする。[Means for Solving the Problems 1] The magnetic storage medium of the present invention comprises a ferromagnetic metal medium formed on a non-magnetic substrate, coated with a thin film of carbide and carbon substances and a slippery oxide, Next, a polycondensation film of a silicon compound is coated, and a fluorinated organic substance is further coated.
Cr、Ti、Ta、Nbは強磁性体金属媒体と炭化物お
よび炭素間の密着をより確かにする目的で被覆し、その
膜厚は50人〜100人で十分である。Cr, Ti, Ta, and Nb are coated in order to further ensure the adhesion between the ferromagnetic metal medium and the carbide and carbon, and a film thickness of 50 to 100 is sufficient.
炭素はダイヤモンド状、グラファイト状、アモルフオス
状の何れでもよく膜厚は150人〜800人形成する。The carbon may be diamond-like, graphite-like, or amorphous, and the film thickness is 150 to 800.
滑性酸化物は炭素と混合又は炭素膜上に10〜50人形
成する。以上は真空蒸着法、スパッタリング法、イオン
ブレーティング法やCVD法の何れの方法でも形成可能
である。The lubricating oxide is mixed with carbon or formed on the carbon film. The above can be formed by any method such as a vacuum evaporation method, a sputtering method, an ion blating method, or a CVD method.
次に分子の一方にアルコキシ基を有し、他方にアミノ基
、イミノ基の少なくとも一つの官能基を有する硅素化合
物とは、
HJ−(CHil 2−NH−(CHtl 3−3i−
(OCH315HJ−(CHal 2−NH−(CH2
15−3i−(OCHs) 2N3
H2N−(CH2+ 2−NH−(CH−+ 2−NH
−fcH−)−3i−fOcH−13に代表される物質
であり、何れも可溶性溶媒に希釈され、スプレー法、ス
ピンナー法、ディッピング法、パイロゾル法等の既知の
方法で塗布後、焼成により、縮合膜を形成する。溶媒の
制限は特に無く、アルコール類、ハロゲン化炭化水素類
を用い、得たい膜厚により濃度が決定される。又焼成は
60〜200℃、5分〜20分で充分である。Next, a silicon compound having an alkoxy group on one side of the molecule and at least one functional group of an amino group or an imino group on the other side is defined as HJ-(CHil 2-NH-(CHtl 3-3i-
(OCH315HJ-(CHal 2-NH-(CH2
15-3i-(OCHs) 2N3 H2N-(CH2+ 2-NH-(CH-+ 2-NH
-fcH-)-3i-fOcH-13, which is diluted with a soluble solvent, applied by a known method such as a spray method, spinner method, dipping method, or pyrosol method, and then condensed by baking. Forms a film. There are no particular restrictions on the solvent; alcohols and halogenated hydrocarbons are used, and the concentration is determined depending on the desired film thickness. Further, baking at 60 to 200°C for 5 to 20 minutes is sufficient.
膜厚は、数人(単分子層)でも効果があり、より厚膜で
も問題は無い。As for the film thickness, it is effective even with a few people (monolayer), and there is no problem even with a thicker film.
分子内にカルボキシル基あるいはその誘導体を有するパ
ーフロロポリエーテルは、モンテジソン社製、フオンブ
リンZ−DEAL、Z−DIACに代表されるものであ
るが、これらはZ−D。Perfluoropolyethers having a carboxyl group or a derivative thereof in the molecule are represented by Fomblin Z-DEAL and Z-DIAC manufactured by Montegisson, and these are Z-D.
L、AMシリーズと混合して用いてもよい。It may be used in combination with the L and AM series.
又以下に示す分子の一方の末端や分子の中央にカルボキ
シル基、あるいはその誘導体を有するパーフロロポリエ
ーテル等が用いられる。Further, perfluoropolyethers having a carboxyl group or a derivative thereof at one end of the molecule or at the center of the molecule as shown below are used.
ここでRは−CL H,。1あるいは−CzFiシや、
であり、
Rflは−CF20− fc2F、ol。−fcF、o
l 、−CF2−をRtzは−(:F20− fc2F
、01、− f(:F20+ 、−C:F−を表し、l
、Ill + IIは1以上の整数である。Here R is -CL H,. 1 or -CzFi or
and Rfl is -CF20- fc2F, ol. -fcF,o
l, -CF2- to Rtz -(:F20- fc2F
,01,-f(:F20+ ,-C:F-, l
, Ill + II are integers of 1 or more.
これらはフッ素系溶媒に希釈され、スピンナー法、ディ
ッピング法で塗布可能である。膜厚は10人で十分に効
果を発揮する。These can be diluted with a fluorine-based solvent and applied by a spinner method or a dipping method. The film thickness is sufficient for 10 people to be effective.
[作 用]
強m性金属媒体上に形成された炭化物、炭素は&fi気
ヘッドの衝撃を緩衝する機能があるが硬度の高いスライ
ダーを有する磁気ヘッドとのC8Sでは炭素質膜が削れ
てしまう、そこで潤滑性に優れた滑性酸化物(PbO,
CdO,Sbi Ox )を混合又は積層する。アルコ
キシ基を有し、他方にアミン基、イミノ基等の少なくと
も一つの官能基を有する硅素化合物の重縮合膜を形成し
、前記薄膜と潤滑剤の固着力が上がる。アルコキシ基は
、窒素酸化膜及び炭素の最表面に存在するOH基、C0
0)(基、及びピンホール部の金属媒体表面のOH基と
の脱水縮合反応により強固な密着性を有する薄膜を形成
する。一方のアミノ基あるいはイミノ基は後述のフッ化
有機物のカルボキシル基と強い新和力を示し、ヘッドの
衝撃磨耗によって簡単にフッ化有機物が除去される事を
防ぐ作用を示す、又、塩素等の腐食性因子のトラップ効
果が高(、防錆作用を示す。[Function] Carbide and carbon formed on a strong metal medium have the function of buffering the impact of a magnetic head, but in C8S with a magnetic head that has a highly hard slider, the carbonaceous film will be scraped. Therefore, lubricating oxides (PbO,
CdO, SbiOx) are mixed or stacked. A polycondensation film of a silicon compound having an alkoxy group and at least one functional group such as an amine group or an imino group on the other hand is formed, thereby increasing the adhesion strength between the thin film and the lubricant. Alkoxy groups are OH groups present on the nitrogen oxide film and the outermost surface of carbon, C0
0) Forms a thin film with strong adhesion through a dehydration condensation reaction with the (group) and the OH group on the surface of the metal medium in the pinhole part.On the other hand, the amino group or imino group is combined with the carboxyl group of the fluorinated organic substance described below. It exhibits strong anti-corrosion properties, has the effect of preventing fluorinated organic substances from being easily removed due to impact abrasion of the head, and has a high trapping effect on corrosive factors such as chlorine (and exhibits anti-corrosion effects).
本発明のフッ化有機物は、塗布型メディアの潤滑剤とし
て広く使用されており、記憶媒体表面から除去されなけ
れば優れた潤滑性能を発揮する。The fluorinated organic substance of the present invention is widely used as a lubricant for coated media, and exhibits excellent lubrication performance unless removed from the surface of the storage medium.
以上により機械的信頼性が大幅に向上した。As a result of the above, mechanical reliability has been significantly improved.
次に実施例で具体的に説明する。Next, examples will be specifically explained.
[実 施 例−11
鏡面仕上げされたディスク状アルミニウム合金基板状に
非磁性合金めっきとしてN1−P合金めっきを約15μ
mの厚さにめっき後、研磨により10μmの厚さ、表面
粗さ0.03μm以下にし、更に金属6f1性薄膜とし
てCo−N1−P合金を約0.06μm厚にめっきした
。[Example 11: Approximately 15 μm of N1-P alloy plating was applied as non-magnetic alloy plating to a mirror-finished disc-shaped aluminum alloy substrate.
After plating to a thickness of m, the plate was polished to a thickness of 10 μm and a surface roughness of 0.03 μm or less, and then a Co-N1-P alloy was plated to a thickness of about 0.06 μm as a metal 6f1 thin film.
次にマグネトロンスパッタ法でCrを100人、アモル
フオス状炭素質膜を300人連続して形成した。更にマ
グネトロンスパッタ法でPbOを100人形成した。Next, 100 Cr films and 300 amorphous carbonaceous films were successively formed by magnetron sputtering. Furthermore, 100 layers of PbO were formed by magnetron sputtering.
次に第1表に示す硅素化合物をグイフロンS−3溶媒に
0.0OIW/V%濃度で溶解し、ディッピング法(l
Oam/ min )で塗布し、その後110℃で1
5分間焼成した。Next, the silicon compounds shown in Table 1 were dissolved in Guiflon S-3 solvent at a concentration of 0.0 OIW/V%, and the dipping method (l
Oam/min), then 110°C
Baked for 5 minutes.
更に同じく第1表に示すフッ化有機物をグイフロンS−
3に0.03W/V%濃度で溶解し、ディッピング法(
10cm/min )で塗布し、その後90℃で10分
加熱処理を行った。Furthermore, the fluorinated organic substances shown in Table 1 were added to Guiflon S-
3 at a concentration of 0.03 W/V% and dipping method (
10 cm/min), and then heat-treated at 90° C. for 10 minutes.
[実 施 例−2]
実施例1と同様にして金属媒体を有するディスクを作成
した。[Example 2] A disk having a metal medium was produced in the same manner as in Example 1.
次にマグネトロンスパッタ装置でNbを100人アモル
フオス状の炭素質膜を300人連続して形成した。更に
マグネトロンスパッタ法で50人CdOを形成した0次
に第1表に示す硅素化合物をグイフロンS−3溶媒に0
.002W/V%濃度で溶解し、ディッピング法(10
cm/ min )で塗布し、その後110℃で10分
焼成した。Next, an amorphous carbonaceous film was successively formed using Nb by 100 people and 300 people using a magnetron sputtering device. Furthermore, 50 CdOs were formed by magnetron sputtering, and then the silicon compounds shown in Table 1 were added to Guiflon S-3 solvent.
.. 002W/V% concentration and dipping method (10
cm/min) and then baked at 110°C for 10 minutes.
更に第1表に示すフッ化有機物をグイフロンS−3に0
.02W/V%濃度で溶解し、ディッピング法(10c
m/ min )で塗布し、その後90℃で10分、加
熱処理を行った。Furthermore, the fluorinated organic substances shown in Table 1 were added to Guiflon S-3.
.. Dissolved at a concentration of 0.02W/V% and dipping method (10c
m/min) and then heat-treated at 90°C for 10 minutes.
[実 施 例−31
実施例1と同様にして金属媒体を有するディスクを作成
した。[Example 31 A disk having a metal medium was produced in the same manner as in Example 1.
次にマグネトロンスパッタ装置でT1を50人、Taを
50人形成した。Next, 50 T1 layers and 50 Ta layers were formed using a magnetron sputtering device.
更にマグネトロンスパッタ装置でアモルフォス状の炭素
質膜とSbz O3を混合で800人形成した。次に第
1表に示す硅素化合物をグイフロン3−3溶媒にO,0
OIW/V%濃度で溶解し、ディッピング法(10cm
/ min )で塗布し、その後110’Cで10分焼
成した。Furthermore, 800 pieces of amorphous carbonaceous film and Sbz O3 were mixed using a magnetron sputtering device. Next, the silicon compounds shown in Table 1 were added to Guiflon 3-3 solvent with O,0
Dissolve at OIW/V% concentration and dipping method (10 cm
/min) and then baked at 110'C for 10 minutes.
更に第1表に示すフッ化有機物を、グイフロンS−3に
0.05W/V%濃度で溶解し、ディッピング法(10
cm/ min )で塗布し、その後90℃で10分、
加熱処理した。Furthermore, the fluorinated organic substances shown in Table 1 were dissolved in Guiflon S-3 at a concentration of 0.05 W/V%, and the dipping method (10
cm/min), then at 90°C for 10 minutes.
Heat treated.
[実 施 例−4]
実施例1と同様にして金属媒体を有するディスクを作成
した。[Example 4] A disk having a metal medium was produced in the same manner as in Example 1.
次にマグネトロンスパッタ装置でグラファイト状の炭素
質膜を500人とCdOを混合で200人形酸した。次
に第1表に示す硅素化合物をグイフロンS−3溶媒に0
.002W/V%濃度で溶解し、ディッピング法(10
cm/ min )で塗布し、110℃で15分焼成し
た。Next, the graphite-like carbonaceous film was acidified using a magnetron sputtering device using a mixture of 500 people and 200 people of CdO. Next, the silicon compounds shown in Table 1 were added to Guiflon S-3 solvent.
.. 002W/V% concentration and dipping method (10
cm/min) and baked at 110°C for 15 minutes.
更に第1表に示すフッ化有機物をグイフロン5−3j:
0.IW/V%濃度で溶解し、ディッピング法(10a
m/ min )で塗布し、その後80℃で10分間、
加熱処理を行った。Furthermore, the fluorinated organic substances shown in Table 1 are added to Guiflon 5-3j:
0. Dissolved at IW/V% concentration and dipping method (10a
m/min) and then at 80°C for 10 minutes.
Heat treatment was performed.
[比 較 例−1]
実施例1に於いてPbOをスパックせずサンプルを作成
した。[Comparative Example-1] A sample was prepared in Example 1 without sprinkling PbO.
[比 較 例−2]
実施例2に於いてCdOをスパックせずサンプルを作成
した。[Comparative Example-2] A sample was prepared in Example 2 without sprinkling CdO.
[比 較 例−3]
実施例3に於いてSb203をスパッタせずサンプルを
作成した。[Comparative Example-3] A sample was prepared in Example 3 without sputtering Sb203.
[比 較 例−41
実施例4に於いてフッ化有機物を使用せずサンプルを作
成した。[Comparative Example-41 A sample was prepared in Example 4 without using the fluorinated organic substance.
〔比 較 例−5〕
実施例4に於いて硅素化合物を使用せずサンプルを作成
した。[Comparative Example-5] A sample was prepared in Example 4 without using the silicon compound.
以上の実施例、比較例のディスクをC8S試験した。C
SS試験は、浮上量0−20um、Hv1200のスラ
イダー材質アルミナチタンカーバイドの薄膜ヘッドを用
いてC8S前とC5520000回後の静摩擦係数の測
定を行った。その結果を第2表に示す。The disks of the above Examples and Comparative Examples were subjected to a C8S test. C
In the SS test, the static friction coefficient was measured before C8S and after C5520000 times using a thin film head made of alumina titanium carbide as a slider material with a flying height of 0-20 um and Hv1200. The results are shown in Table 2.
尚本発明は、フロッピーディスク、磁気テープ、磁気カ
ードにも適用が可能であり、基板材料はガラス、プラス
チックでも同様の効果を奏する。The present invention can also be applied to floppy disks, magnetic tapes, and magnetic cards, and the same effect can be achieved even when the substrate material is glass or plastic.
第 1 表
第 2 表
り発明の効果〕
以上の通り本発明によれば、硅素化合物の重縮合膜を形
成し、その上にフッ化有機物を被覆することにより、
ヘッドの衝撃磨耗によってフッ化有機物の被覆が簡単に
除去されることもな(、また腐食性因子に対しても併せ
て極めてすぐれた効果を有する。Effects of the invention as shown in Table 1, Table 2] As described above, according to the present invention, by forming a polycondensation film of a silicon compound and coating the fluorinated organic substance thereon, the fluorinated organic substance is removed by impact abrasion of the head. The coating is not easily removed (and also has an extremely excellent effect on corrosive factors).
以 上Below Up
Claims (5)
に、炭化物及び炭素の物質より成る薄膜と滑性酸化物が
被覆され、その上に硅素化合物の重縮合膜が被覆され、
更にフッ化有機物を被覆せしめたことを特徴とする磁気
記憶媒体。(1) A thin film of carbide and carbon and a slippery oxide are coated on a ferromagnetic metal thin film medium formed in the shape of a nonmagnetic substrate, and a polycondensation film of a silicon compound is coated thereon,
A magnetic storage medium further characterized by being coated with a fluorinated organic substance.
コキシ基を有し、他方にアミノ基、イミノ基の少なくと
も一つの官能基を有することを特徴とする請求項1記載
の磁気記憶媒体。(2) The magnetic storage medium according to claim 1, wherein the polycondensation film of the silicon compound has an alkoxy group on one side of the molecule and at least one functional group of an amino group or an imino group on the other side. .
キシル基あるいはその誘電体を含むパーフロロポリエー
テルであることを特徴とする請求項1記載の磁気記憶媒
体。(3) The magnetic storage medium according to claim 1, wherein the fluorinated organic substance is a perfluoropolyether containing at least a carboxyl group or its dielectric in its molecule.
3であることを特徴とする請求項1記載の磁気記憶媒体
。(4) The lubricating oxide is PbO, CdO, Sb_2O_
3. The magnetic storage medium according to claim 1, wherein the magnetic storage medium is 3.
酸化物の物質より成る薄膜との間にCr、Ti、Ta、
Nbから選ばれる少なくとも1種の物質より成る被膜が
形成せしめられた事を特徴とする請求項1記載の磁気記
憶媒体。(5) Cr, Ti, Ta,
2. The magnetic storage medium according to claim 1, further comprising a coating formed of at least one substance selected from Nb.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32964188A JPH02173929A (en) | 1988-12-27 | 1988-12-27 | Magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32964188A JPH02173929A (en) | 1988-12-27 | 1988-12-27 | Magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02173929A true JPH02173929A (en) | 1990-07-05 |
Family
ID=18223612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32964188A Pending JPH02173929A (en) | 1988-12-27 | 1988-12-27 | Magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02173929A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09138943A (en) * | 1995-11-14 | 1997-05-27 | Nec Corp | Magnetic disk medium |
US6535353B2 (en) * | 1998-03-20 | 2003-03-18 | Seagate Technology Llc | Capped polymeric load/unload pads |
-
1988
- 1988-12-27 JP JP32964188A patent/JPH02173929A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09138943A (en) * | 1995-11-14 | 1997-05-27 | Nec Corp | Magnetic disk medium |
US6535353B2 (en) * | 1998-03-20 | 2003-03-18 | Seagate Technology Llc | Capped polymeric load/unload pads |
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