JPH02153552A - Semiconductor element and its manufacture - Google Patents

Semiconductor element and its manufacture

Info

Publication number
JPH02153552A
JPH02153552A JP12448689A JP12448689A JPH02153552A JP H02153552 A JPH02153552 A JP H02153552A JP 12448689 A JP12448689 A JP 12448689A JP 12448689 A JP12448689 A JP 12448689A JP H02153552 A JPH02153552 A JP H02153552A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
resistance
film
element
provided
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12448689A
Inventor
Kazuyoshi Hirakawa
Yasutaka Nakasaki
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To obtain a programmable element having a high OFF resistance and a low ON resistance by using a semiconductor element having electrodes as anti-fuses over or under which amorphous silicon and insulating silicon films are provided.
CONSTITUTION: An N+ layer (a lower electrode) is provided in an Si substrate 101, a hole is opened in an interlayer insulating film 103, an SiO2 film 107 and an amorphous Si film 105 are superposed in the hole in the order of the films 107 and 105 by a CVD method and an upper electrode 106 is formed on the patterned amorphous Si film 105 and is used as an electrode of a three-layer structure. Another electrode is provided in a hole provided at the time of a second patterning. By the three-layer structure, the OFF resistance of an element is secured by the SiO2 film of a high specific resistance and the reliability of an anti-fuse of the element is secured by the characteristics of the amorphous Si film. The OFF resistance can be easily broken down by a program voltage by making thin the SiO2 film and can be brought into a low resistance state without having an effect on the ON resistance of the element.
COPYRIGHT: (C)1990,JPO&Japio
JP12448689A 1988-08-23 1989-05-19 Semiconductor element and its manufacture Pending JPH02153552A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20903488 1988-08-23

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19893927033 DE3927033C2 (en) 1988-08-23 1989-08-16 A semiconductor device comprising antifuse electrode assembly and process for its preparation
KR890011867A KR940008564B1 (en) 1988-08-23 1989-08-21 Semiconductor device and manufacturing method thereof
US07609109 US5210598A (en) 1988-08-23 1990-10-31 Semiconductor element having a resistance state transition region of two-layer structure

Publications (1)

Publication Number Publication Date
JPH02153552A true true JPH02153552A (en) 1990-06-13

Family

ID=16566160

Family Applications (2)

Application Number Title Priority Date Filing Date
JP12448689A Pending JPH02153552A (en) 1988-08-23 1989-05-19 Semiconductor element and its manufacture
JP18538789A Expired - Fee Related JPH0756884B2 (en) 1988-08-23 1989-07-18 The method of manufacturing a semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP18538789A Expired - Fee Related JPH0756884B2 (en) 1988-08-23 1989-07-18 The method of manufacturing a semiconductor device

Country Status (1)

Country Link
JP (2) JPH02153552A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04312949A (en) * 1991-03-26 1992-11-04 Mitsubishi Electric Corp Method of adjusting semiconductor device
US5485032A (en) * 1992-12-18 1996-01-16 International Business Machines Corporation Antifuse element with electrical or optical programming

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714024B2 (en) * 1990-11-29 1995-02-15 川崎製鉄株式会社 Multi-chip module
US5625220A (en) * 1991-02-19 1997-04-29 Texas Instruments Incorporated Sublithographic antifuse
US5100827A (en) * 1991-02-27 1992-03-31 At&T Bell Laboratories Buried antifuse
US5701027A (en) * 1991-04-26 1997-12-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5557136A (en) * 1991-04-26 1996-09-17 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5196724A (en) * 1991-04-26 1993-03-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US6156588A (en) * 1998-06-23 2000-12-05 Vlsi Technology, Inc. Method of forming anti-fuse structure
JP5525694B2 (en) * 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
JP5641840B2 (en) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04312949A (en) * 1991-03-26 1992-11-04 Mitsubishi Electric Corp Method of adjusting semiconductor device
US5485032A (en) * 1992-12-18 1996-01-16 International Business Machines Corporation Antifuse element with electrical or optical programming

Also Published As

Publication number Publication date Type
JPH0756884B2 (en) 1995-06-14 grant
JP2048487C (en) grant
JPH02146745A (en) 1990-06-05 application

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