JPH0214772B2 - - Google Patents
Info
- Publication number
- JPH0214772B2 JPH0214772B2 JP55128527A JP12852780A JPH0214772B2 JP H0214772 B2 JPH0214772 B2 JP H0214772B2 JP 55128527 A JP55128527 A JP 55128527A JP 12852780 A JP12852780 A JP 12852780A JP H0214772 B2 JPH0214772 B2 JP H0214772B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- container
- semiconductor
- surface modification
- sealed container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12852780A JPS5753933A (ja) | 1980-09-18 | 1980-09-18 | Handotaisoshinoseizohoho |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12852780A JPS5753933A (ja) | 1980-09-18 | 1980-09-18 | Handotaisoshinoseizohoho |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5753933A JPS5753933A (ja) | 1982-03-31 |
| JPH0214772B2 true JPH0214772B2 (enrdf_load_stackoverflow) | 1990-04-10 |
Family
ID=14986946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12852780A Granted JPS5753933A (ja) | 1980-09-18 | 1980-09-18 | Handotaisoshinoseizohoho |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5753933A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58190027A (ja) * | 1982-04-30 | 1983-11-05 | Nec Kyushu Ltd | 半導体基板有機処理装置 |
| JPS59175122A (ja) * | 1983-03-23 | 1984-10-03 | Nec Corp | 半導体基板塗布前処理装置 |
| JPS6284517A (ja) * | 1985-10-08 | 1987-04-18 | Kuretsuku Syst:Kk | 感光剤塗布処理装置 |
| JPS62211643A (ja) * | 1986-03-12 | 1987-09-17 | Mitsubishi Electric Corp | 密着強化剤塗布方法 |
| JPS63199423A (ja) * | 1987-02-16 | 1988-08-17 | Toshiba Corp | 半導体基板表面処理方法 |
| JPH0793254B2 (ja) * | 1987-07-22 | 1995-10-09 | 松下電子工業株式会社 | レジスト膜形成用基板の処理方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5489477A (en) * | 1977-12-27 | 1979-07-16 | Toshiba Corp | Production of semiconductor device |
| JPS5543844A (en) * | 1978-09-25 | 1980-03-27 | Hitachi Ltd | Method and apparatus for photoresist sensitizing process |
-
1980
- 1980-09-18 JP JP12852780A patent/JPS5753933A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5753933A (ja) | 1982-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR860002082B1 (ko) | 레지스트 패턴의 형성 방법 및 장치 | |
| US6160242A (en) | Apparatus and process for measuring the temperature of semiconductor wafers in the presence of radiation absorbing gases | |
| JPH06132209A (ja) | 処理方法及びその装置 | |
| JPH0214772B2 (enrdf_load_stackoverflow) | ||
| JP6767257B2 (ja) | 基板処理装置及び基板処理方法 | |
| KR20080049017A (ko) | 기판 처리 장치, 기판 처리 방법, 기판 처리 프로그램 및그 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체 | |
| JPS57136342A (en) | Manufacture of semiconductor device | |
| JPS6021522A (ja) | レジストパタ−ン形成方法 | |
| US4897337A (en) | Method and apparatus for forming resist pattern | |
| US5120634A (en) | Method for forming patterned resist layer on semiconductor body | |
| JPS60137027A (ja) | 光照射加熱方法 | |
| JPH0237688B2 (enrdf_load_stackoverflow) | ||
| JPS6189632A (ja) | レジストパタ−ンの形成方法 | |
| JPH02134821A (ja) | ポリイミドベーク装置 | |
| JPH01157527A (ja) | フォトレジストのパターン形成方法 | |
| JP2691907B2 (ja) | 加熱方法及び処理装置及び処理方法 | |
| JPS60176236A (ja) | レジスト処理装置 | |
| EP0185366B1 (en) | Method of forming resist pattern | |
| JPS60117627A (ja) | レジストパタ−ンの形成方法及びレジスト処理装置 | |
| JP2650445B2 (ja) | 薄膜形成装置 | |
| JPH09246261A (ja) | 熱処理装置とその温度制御方法 | |
| JPS61147527A (ja) | レジストパタ−ンの形成方法 | |
| JPH0715873B2 (ja) | レジストパターン形成方法 | |
| JPH06252040A (ja) | レジストパターン形成方法及びレジスト表面酸処理装置 | |
| KR0139814B1 (ko) | 반도체 소자의 제조방법 |