JPH02143553A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02143553A JPH02143553A JP63298552A JP29855288A JPH02143553A JP H02143553 A JPH02143553 A JP H02143553A JP 63298552 A JP63298552 A JP 63298552A JP 29855288 A JP29855288 A JP 29855288A JP H02143553 A JPH02143553 A JP H02143553A
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- terminals
- another
- power
- circuit block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 239000000872 buffer Substances 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 230000006870 function Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 abstract 3
- 102100039435 C-X-C motif chemokine 17 Human genes 0.000 abstract 1
- 101000889048 Homo sapiens C-X-C motif chemokine 17 Proteins 0.000 abstract 1
- 238000007599 discharging Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特に1パツケージ内に大容
量の半導体記憶部を備えた半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device having a large capacity semiconductor memory section in one package.
近年、半導体装置は1チツプで旧来の1システムを包含
するほどの規模となりつつある。中でも半導体記憶装置
は、1Mビット(1,048,576ワード×1ビツト
)、4Mビット(4,194,304ワード×1ビツト
)、16Mビット(16,777,216フード×1ビ
ツト)とメモリ容量の増大が喧伝され、かつ動作速度も
100ns、80ns、60nsと高速化されようとし
ている。In recent years, semiconductor devices have become so large that one chip can include one conventional system. Among these, semiconductor memory devices have memory capacities of 1M bits (1,048,576 words x 1 bit), 4M bits (4,194,304 words x 1 bit), and 16M bits (16,777,216 words x 1 bit). It has been touted that the amount of time has increased, and the operating speed is also about to increase to 100 ns, 80 ns, and 60 ns.
このような規模の増大に伴い、動作時の消費電流も増大
しつつある。With this increase in scale, current consumption during operation is also increasing.
例えば、標準的1MビットDRAMは2,048個のビ
ット線センス増幅回路を具備しており、1回の動作サイ
クルで全ビット線が充電及び放電を行う構成となってい
るので、1本のビット線の容量を0.5pFとして電源
電圧5Vで動作させ、がっ1 / 2 V ccプリチ
ャージ方式で20ns程度の高速動作をさせた場合、方
形波的に平均化し、の電流で放電及び充電される。For example, a standard 1M bit DRAM has 2,048 bit line sense amplifier circuits, and all bit lines are charged and discharged in one operation cycle, so one bit When operating at a power supply voltage of 5V with a line capacitance of 0.5pF, and operating at a high speed of about 20ns using the 1/2V cc precharge method, the current is averaged in a square wave and discharged and charged. Ru.
これを三角波として放電及び充電するものとすれば、電
流変化率は
る。従って接地電位側電源供給線或いは電源電位側電源
供給線に対して
となる。If this is used as a triangular wave for discharging and charging, the rate of current change will increase. Therefore, it is relative to the power supply line on the ground potential side or the power supply line on the power supply potential side.
なお、これらの主電源は1系統で供給される構成となっ
ている。Note that these main power sources are configured to be supplied through one system.
上述した従来の半導体装置は、規模が増大し動作速度も
高速化されつつあるが、主電源は1系統で供給される構
成となっているので、消費電流が増大しかつ電流変化率
が大きくなり、電源電位変動雑音が発生し、センス増幅
器の感度や高速化などの各部の性能が制約されるという
欠点がある。The conventional semiconductor devices mentioned above are increasing in size and operating speed, but because the main power is supplied from one system, the current consumption increases and the rate of current change increases. However, there are disadvantages in that power supply potential fluctuation noise occurs, which limits the performance of each part, such as the sensitivity and speed of the sense amplifier.
即ち、電源供給系(接地電位側及び電源電位側電源供給
線)には、リードフレーム、及びベレットとリードフレ
ームとを結ぶワイヤを合わせてそのインダクタンスは1
0〜15nHあり、これに電気的測定で不可欠なソケッ
ト部分の配線におけるインダクタンスを含めると20〜
25nHとな〜512〜640(mV)
の電源電位変動雑音が発生することになる。That is, the power supply system (ground potential side and power supply potential side power supply line) has an inductance of 1 including the lead frame and the wire connecting the pellet and the lead frame.
It is 0 to 15 nH, and if you include the inductance in the wiring of the socket part, which is essential for electrical measurements, it is 20 to 15 nH.
A power supply potential fluctuation noise of 25 nH or 512 to 640 (mV) is generated.
この電源電位変動雑音が各部に対して悪影響を及ぼすこ
とには明らかである。It is clear that this power supply potential fluctuation noise has an adverse effect on various parts.
また、電源電位変動雑音は、大規模、高速化に伴ないビ
ット線の充電、放電時に限らず、アドレス入力のラッチ
のため一斎に動作するアドレスバッファ動作時、多ビツ
ト構成の出力のラッチのため一斎に動作する出力バッフ
ァ動作時なども問題にすべき事態となりつつある。In addition, power supply potential fluctuation noise is caused not only when charging and discharging the bit line due to the increase in scale and speed, but also during address buffer operation, which operates all at once to latch the address input, and due to the latching of the output of a multi-bit configuration. This is also becoming a problem when the output buffer operates in a single step.
アドレスバッファ或いは出力バッファは繊細な余裕度設
計が要求される回路要素であり、アクセスタイムに直接
影響を与える部分でもあるため自己雑音への対策は半導
体メモリ或いは半導体装置のアキレスけんとなるもので
ある。Address buffers or output buffers are circuit elements that require delicate margin design and are also parts that directly affect access time, so countermeasures against self-noise are the Achilles' heel of a semiconductor memory or semiconductor device.
本発明の半導体装置は、1つの基板上に形成されそれぞ
れ所定の機能をもつ複数の回路ブロックと、これら回路
ブロックの少なくとも特定の回路ブロックに対しそれぞ
れ独立して電源を供給する電源供給線及びこれら各電源
供給線とそれぞれ接続する電源供給端子とを有している
。A semiconductor device of the present invention includes a plurality of circuit blocks formed on one substrate and each having a predetermined function, power supply lines that independently supply power to at least specific circuit blocks of these circuit blocks, and It has a power supply terminal connected to each power supply line.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明の一実施例を示すブロック図である。FIG. 1 is a block diagram showing one embodiment of the present invention.
この実施例は、1つの基板上に形成されそれぞれ所定の
機能をもつ複数の回路ブロックに分割された、アドレス
バッファ回路1.デコーダ回路2.3、メモリセルアレ
イ4を構成する4つのメモリブロック41〜44、及び
入出力回路5と、これら各回路ブロックに対してそれぞ
れ独立して電源を供給する、接地電位(VSSI〜Vs
s7)側の電源供給端子T5□〜Ts7及び電源電位(
Vcct〜VCC7)側の電源供給端子Tc1〜Tcフ
並びにこれら電源供給端子Tsl〜T 57 、 T
c 1〜T67と各回路ブロックとの間をそれぞれ接続
する電源供給線とを有する構成となっている。In this embodiment, an address buffer circuit 1. The ground potential (VSSI to Vs
s7) side power supply terminals T5□ to Ts7 and the power supply potential (
Vcct to VCC7) side power supply terminals Tc1 to Tc and these power supply terminals Tsl to T57, T
The configuration includes power supply lines connecting c1 to T67 and each circuit block, respectively.
このように各回路ブロックごとに電源供給端子T51〜
T5.. Tc、〜To7及び電源供給線を分離し独立
して電源を供給することにより、各回路ブロックの充放
電電流が分散され、この充放電電流による電源電位変動
雑音を大幅に低減することができる。In this way, each circuit block has power supply terminals T51~
T5. .. By separating Tc, to To7 and the power supply line and supplying power independently, charging and discharging currents of each circuit block are distributed, and power supply potential fluctuation noise caused by this charging and discharging current can be significantly reduced.
なお、回路ブロックをどのように分割するかは、充放電
電流の大きさや充放電のタイミング等により決定し、充
放電電流が小さければ、例えばデコーダ回路2,3のよ
うに、複数の回路ブロックを統合して1つの回路ブロッ
クとして電源供給端子及び電源供給線を設けてもよいし
、また充放電電流が時分割に行なわれる場合もこれらを
統合し、いたずらに電源供給端子や電源供給線を増やす
べきではない。また、充電と放電とが異なったタイミン
グで行なわれるときには、例えば、電源電位側の電源供
給端子及び電源供給線は統合するが、接地電位側の電源
供給端子及び電源供給線は分離するということもできる
。Note that how to divide a circuit block is determined by the magnitude of the charging/discharging current, the timing of charging/discharging, etc. If the charging/discharging current is small, multiple circuit blocks can be divided, such as decoder circuits 2 and 3. The power supply terminals and power supply lines may be integrated into one circuit block, or if charging and discharging current is performed in a time-sharing manner, these may be integrated to unnecessarily increase the number of power supply terminals and power supply lines. Shouldn't. Also, when charging and discharging are performed at different timings, for example, the power supply terminal and power supply line on the power potential side may be integrated, but the power supply terminal and power supply line on the ground potential side may be separated. can.
以上説明したように本発明は、複数の回路ブロックに対
しそれぞれ別々に電源供給端子及び電源供給線を設け、
それぞれ独立して電源を供給する構成とすることにより
、充放電電流が分散されるので電源電位変動雑音を大幅
に低減することができ、従って、センス増幅器やアドレ
スバッファ等の感度向上、高速化など、各部の性能を向
上させることができる効果がある。As explained above, the present invention provides separate power supply terminals and power supply lines for a plurality of circuit blocks,
By configuring the power supplies to be supplied independently, the charging and discharging currents are dispersed, and power supply potential fluctuation noise can be significantly reduced. This can improve the sensitivity and speed of sense amplifiers, address buffers, etc. This has the effect of improving the performance of each part.
第1図は本発明の一実施例を示すブロック図である。 FIG. 1 is a block diagram showing one embodiment of the present invention.
Claims (1)
の回路ブロックと、これら回路ブロックの少なくとも特
定の回路ブロックに対しそれぞれ独立して電源を供給す
る電源供給線及びこれら各電源供給線とそれぞれ接続す
る電源供給端子とを有することを特徴とする半導体装置
。A plurality of circuit blocks formed on one substrate and each having a predetermined function, power supply lines that independently supply power to at least specific circuit blocks of these circuit blocks, and connections to each of these power supply lines. A semiconductor device characterized by having a power supply terminal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63298552A JPH02143553A (en) | 1988-11-25 | 1988-11-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63298552A JPH02143553A (en) | 1988-11-25 | 1988-11-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02143553A true JPH02143553A (en) | 1990-06-01 |
Family
ID=17861212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63298552A Pending JPH02143553A (en) | 1988-11-25 | 1988-11-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02143553A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0494559A (en) * | 1990-08-10 | 1992-03-26 | Nec Ic Microcomput Syst Ltd | Semiconductor integrated circuit |
JPH04162559A (en) * | 1990-10-25 | 1992-06-08 | Nec Ic Microcomput Syst Ltd | Semiconductor ic |
US5956270A (en) * | 1997-03-26 | 1999-09-21 | Mitsubishi Denki Kabushiki Kaisha | Flash memory and microcomputer |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5870565A (en) * | 1981-10-23 | 1983-04-27 | Hitachi Ltd | Power supply circuit of intergrated circuit |
JPS59193046A (en) * | 1983-04-15 | 1984-11-01 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS63168896A (en) * | 1987-01-06 | 1988-07-12 | Toshiba Corp | Semiconductor integrated circuit |
-
1988
- 1988-11-25 JP JP63298552A patent/JPH02143553A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5870565A (en) * | 1981-10-23 | 1983-04-27 | Hitachi Ltd | Power supply circuit of intergrated circuit |
JPS59193046A (en) * | 1983-04-15 | 1984-11-01 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS63168896A (en) * | 1987-01-06 | 1988-07-12 | Toshiba Corp | Semiconductor integrated circuit |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0494559A (en) * | 1990-08-10 | 1992-03-26 | Nec Ic Microcomput Syst Ltd | Semiconductor integrated circuit |
JPH04162559A (en) * | 1990-10-25 | 1992-06-08 | Nec Ic Microcomput Syst Ltd | Semiconductor ic |
US5956270A (en) * | 1997-03-26 | 1999-09-21 | Mitsubishi Denki Kabushiki Kaisha | Flash memory and microcomputer |
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