JPH02137257A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH02137257A
JPH02137257A JP29145288A JP29145288A JPH02137257A JP H02137257 A JPH02137257 A JP H02137257A JP 29145288 A JP29145288 A JP 29145288A JP 29145288 A JP29145288 A JP 29145288A JP H02137257 A JPH02137257 A JP H02137257A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
formed
island
diffusion
region
hfe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29145288A
Inventor
Minoru Maeda
Kazuo Tomizuka
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To reduce the irregularity of hFE by forming simultaneously a first diffusion layer being in ohmic contact with the lower electrode of a capacitor element formed on one island, and the constitution part of a transistor formed on the other island of a conductivity type inverse to the one island, and constituting a diode by using the island and the first diffusion layer.
CONSTITUTION: An isolation region 5 and a base region 9 are used as diffusion regions 8, 10 being in ohmic contact with the lower electrode 17 of an MIS type capacitor. A superposed region is formed by utilizing a base diffusion process and an isolation diffusion process. Further, a diode is formed by using an island 6 where an MIS type capacitor is formed and diffusion regions 8, 10; a cathode contact region 15 to be formed on the island 6 by emitter diffusion process is formed. Thereby, the irregularity of hFE of an NPN transistor wherein the MIS type capacitor is added as an option device is scarcely present, so that a device whose hFE is easily controlled can be obtained.
COPYRIGHT: (C)1990,JPO&Japio
JP29145288A 1988-11-17 1988-11-17 Semiconductor integrated circuit Pending JPH02137257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29145288A JPH02137257A (en) 1988-11-17 1988-11-17 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29145288A JPH02137257A (en) 1988-11-17 1988-11-17 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH02137257A true true JPH02137257A (en) 1990-05-25

Family

ID=17769049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29145288A Pending JPH02137257A (en) 1988-11-17 1988-11-17 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH02137257A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08227945A (en) * 1994-10-17 1996-09-03 Siliconix Inc Integrated circuit forming method based upon bi-cdmos process technology

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08227945A (en) * 1994-10-17 1996-09-03 Siliconix Inc Integrated circuit forming method based upon bi-cdmos process technology

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