JPH02132862A - Non-volatile semiconductor memory and manufacture thereof - Google Patents

Non-volatile semiconductor memory and manufacture thereof

Info

Publication number
JPH02132862A
JPH02132862A JP28697688A JP28697688A JPH02132862A JP H02132862 A JPH02132862 A JP H02132862A JP 28697688 A JP28697688 A JP 28697688A JP 28697688 A JP28697688 A JP 28697688A JP H02132862 A JPH02132862 A JP H02132862A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
formed
insulating film
contact
conductive film
part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28697688A
Other versions
JPH0760867B2 (en )
Inventor
Yoichi Oshima
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To miniaturize a cell and to improve a data erase efficiency by a method wherein a conductive film is formed on a part of a source or a drain region, and a metal wiring is provided so as to be brought into contact with the conductive film through a contact hole.
CONSTITUTION: A third insulating film 10 is formed on the side face of a gate electrode section of a memory transistor of an ultraviolet erase type re-writable read only memory, and a fourth insulating film 14 is formed on the side face of the gate electrode section on a train side. Next, a conductive film 16 formed of low resistive material is continuously formed not only covering a part of the insulating film 13 but also being in contact with a part of the upside of a source or a drain region for two or more memory cells located in a specified direction. Then, an interlaminar insulating film 19 is formed on a substrate 1, and a metal wiring 21 is formed in contact with the conductive film 16 through contact holes provided onto the insulating film 19 at a ratio of one to each of two or more cells.
COPYRIGHT: (C)1990,JPO&Japio
JP28697688A 1988-11-14 1988-11-14 Non-volatile semiconductor memory Expired - Fee Related JPH0760867B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28697688A JPH0760867B2 (en) 1988-11-14 1988-11-14 Non-volatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28697688A JPH0760867B2 (en) 1988-11-14 1988-11-14 Non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPH02132862A true true JPH02132862A (en) 1990-05-22
JPH0760867B2 JPH0760867B2 (en) 1995-06-28

Family

ID=17711399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28697688A Expired - Fee Related JPH0760867B2 (en) 1988-11-14 1988-11-14 Non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPH0760867B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397726A (en) * 1992-02-04 1995-03-14 National Semiconductor Corporation Segment-erasable flash EPROM
US5402372A (en) * 1992-06-01 1995-03-28 National Semiconductor Corporation High density EEPROM cell array with improved access time and method of manufacture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237960A (en) * 1985-08-13 1987-02-18 Toshiba Corp Manufacture of read only semiconductor memory device
JPS6240761A (en) * 1985-08-15 1987-02-21 Toshiba Corp Read-only semiconductor memory and manufacture thereof
JPS62210678A (en) * 1986-03-12 1987-09-16 Hitachi Ltd Semiconductor integrated circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237960A (en) * 1985-08-13 1987-02-18 Toshiba Corp Manufacture of read only semiconductor memory device
JPS6240761A (en) * 1985-08-15 1987-02-21 Toshiba Corp Read-only semiconductor memory and manufacture thereof
JPS62210678A (en) * 1986-03-12 1987-09-16 Hitachi Ltd Semiconductor integrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397726A (en) * 1992-02-04 1995-03-14 National Semiconductor Corporation Segment-erasable flash EPROM
US5402372A (en) * 1992-06-01 1995-03-28 National Semiconductor Corporation High density EEPROM cell array with improved access time and method of manufacture
US5453393A (en) * 1992-06-01 1995-09-26 National Semiconductor Corporation Method for forming a high density EEPROM cell array with improved access time

Also Published As

Publication number Publication date Type
JPH0760867B2 (en) 1995-06-28 grant
JP2025063C (en) grant

Similar Documents

Publication Publication Date Title
JPH02275672A (en) Thin film transistor
JPH01101519A (en) Active matrix substrate
JPH04176168A (en) Semiconductor memory device and manufacture thereof
JPS61181168A (en) Nonvolatile semiconductor memory device
JPH03283570A (en) Semiconductor device and its production
JPH04226071A (en) Semiconductor memory device
JPH04211178A (en) Manufacture of semiconductor device
JPH0383289A (en) Mos type semiconductor storage device
JPS5543862A (en) Semiconductor nonvolatile memory
JPS5833872A (en) Manufacture of thin film field effect transistor
JPS58154256A (en) Semiconductor memory and preparation thereof
JPH0362574A (en) Nonvolatile semiconductor storage device and operating method therefor
JPH04212471A (en) Semiconductor integrated circuit device
JPH02198170A (en) Semiconductor integrated circuit device and manufacture thereof
JPS63281457A (en) Semiconductor memory
JPH0499060A (en) Semiconductor storage element and manufacture thereof
JPH0214563A (en) Semiconductor memory device
JPH02110980A (en) Nonvolatile semiconductor storage device and manufacture thereof
JPS6276098A (en) Sense amplifier circuit
JPH03245566A (en) Non-volatile semiconductor memory device
JPH01255269A (en) Semiconductor storage device
JPH03102879A (en) Electrically erasable and electrically programmable read only memory
JPS6377159A (en) Manufacture of thin film transistor
JPH01262669A (en) Nonvolatile semiconductor memory storage
JPS62155557A (en) Semiconductor memory device

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees