JPH02127645A - Formation of positive type pattern - Google Patents
Formation of positive type patternInfo
- Publication number
- JPH02127645A JPH02127645A JP63281582A JP28158288A JPH02127645A JP H02127645 A JPH02127645 A JP H02127645A JP 63281582 A JP63281582 A JP 63281582A JP 28158288 A JP28158288 A JP 28158288A JP H02127645 A JPH02127645 A JP H02127645A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- regions
- silylation
- pattern forming
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 238000005755 formation reaction Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 3
- 238000006884 silylation reaction Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound 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CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 abstract 1
- 210000002381 Plasma Anatomy 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000001678 irradiating Effects 0.000 abstract 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052753 mercury Inorganic materials 0.000 abstract 1
- 229920003986 novolac Polymers 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/70425—Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning, multiple exposures for printing a single feature, mix-and-match
Abstract
PURPOSE: To surely form fine positive type patterns by applying a specific pattern forming material on a substrate surface, irradiating the coating with light having 1st and 2nd wavelengths and acting a silylating agent on the surface of the pattern forming material.
CONSTITUTION: The pattern forming material (resist) 2 is prepd. by dissolving a novolak resin and 1.2-naphthoquinone diazide-5-sulfonyl chloride in ethoxyethyl acetate which is a solvent. Only the desired parts of the resist 2 surface formed on the substrate 1 surface are irradiated with UV rays 5 and are thereby exposed. Silylation accelerating regions 35 are thereafter formed. The entire part of the resist 2 is irradiated with mercury bright lines as light 51 to put the regions which are not exposed in the previous stage into the state of allowing the easy silylation. The silylation reaction on the surface of the resist 2 is effected in the stage of forming the silylated regions 36. Etching is thereafter executed by O2 plasma 7, by which the formation of the fine patterns is executed.
COPYRIGHT: (C)1990,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63281582A JPH02127645A (en) | 1988-11-08 | 1988-11-08 | Formation of positive type pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63281582A JPH02127645A (en) | 1988-11-08 | 1988-11-08 | Formation of positive type pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02127645A true JPH02127645A (en) | 1990-05-16 |
Family
ID=17641169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63281582A Pending JPH02127645A (en) | 1988-11-08 | 1988-11-08 | Formation of positive type pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02127645A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0321956A (en) * | 1989-06-19 | 1991-01-30 | Toshiba Corp | Pattern forming method |
| JPH05232707A (en) * | 1991-11-22 | 1993-09-10 | Internatl Business Mach Corp <Ibm> | Positive resist image forming method |
| JPH08190204A (en) * | 1994-11-11 | 1996-07-23 | Nec Corp | Photosensitive composition for silylation and forming method for fine pattern |
| JP2009016653A (en) * | 2007-07-06 | 2009-01-22 | Tokyo Electron Ltd | Substrate processing method and computer-readable storage medium |
| CN109669323A (en) * | 2018-12-11 | 2019-04-23 | 中国科学院光电技术研究所 | One kind realizing large area super resolution lithography method based on structure of resonant cavity |
-
1988
- 1988-11-08 JP JP63281582A patent/JPH02127645A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0321956A (en) * | 1989-06-19 | 1991-01-30 | Toshiba Corp | Pattern forming method |
| JPH05232707A (en) * | 1991-11-22 | 1993-09-10 | Internatl Business Mach Corp <Ibm> | Positive resist image forming method |
| JPH08190204A (en) * | 1994-11-11 | 1996-07-23 | Nec Corp | Photosensitive composition for silylation and forming method for fine pattern |
| JP2009016653A (en) * | 2007-07-06 | 2009-01-22 | Tokyo Electron Ltd | Substrate processing method and computer-readable storage medium |
| CN109669323A (en) * | 2018-12-11 | 2019-04-23 | 中国科学院光电技术研究所 | One kind realizing large area super resolution lithography method based on structure of resonant cavity |
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