JPH02127645A - Formation of positive type pattern - Google Patents

Formation of positive type pattern

Info

Publication number
JPH02127645A
JPH02127645A JP63281582A JP28158288A JPH02127645A JP H02127645 A JPH02127645 A JP H02127645A JP 63281582 A JP63281582 A JP 63281582A JP 28158288 A JP28158288 A JP 28158288A JP H02127645 A JPH02127645 A JP H02127645A
Authority
JP
Japan
Prior art keywords
resist
regions
silylation
pattern forming
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63281582A
Other languages
Japanese (ja)
Inventor
Hiroyuki Tanaka
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP63281582A priority Critical patent/JPH02127645A/en
Publication of JPH02127645A publication Critical patent/JPH02127645A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
    • G03F7/70466Multiple exposures, e.g. combination of fine and coarse exposures, double patterning, multiple exposures for printing a single feature, mix-and-match

Abstract

PURPOSE: To surely form fine positive type patterns by applying a specific pattern forming material on a substrate surface, irradiating the coating with light having 1st and 2nd wavelengths and acting a silylating agent on the surface of the pattern forming material.
CONSTITUTION: The pattern forming material (resist) 2 is prepd. by dissolving a novolak resin and 1.2-naphthoquinone diazide-5-sulfonyl chloride in ethoxyethyl acetate which is a solvent. Only the desired parts of the resist 2 surface formed on the substrate 1 surface are irradiated with UV rays 5 and are thereby exposed. Silylation accelerating regions 35 are thereafter formed. The entire part of the resist 2 is irradiated with mercury bright lines as light 51 to put the regions which are not exposed in the previous stage into the state of allowing the easy silylation. The silylation reaction on the surface of the resist 2 is effected in the stage of forming the silylated regions 36. Etching is thereafter executed by O2 plasma 7, by which the formation of the fine patterns is executed.
COPYRIGHT: (C)1990,JPO&Japio
JP63281582A 1988-11-08 1988-11-08 Formation of positive type pattern Pending JPH02127645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63281582A JPH02127645A (en) 1988-11-08 1988-11-08 Formation of positive type pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63281582A JPH02127645A (en) 1988-11-08 1988-11-08 Formation of positive type pattern

Publications (1)

Publication Number Publication Date
JPH02127645A true JPH02127645A (en) 1990-05-16

Family

ID=17641169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63281582A Pending JPH02127645A (en) 1988-11-08 1988-11-08 Formation of positive type pattern

Country Status (1)

Country Link
JP (1) JPH02127645A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0321956A (en) * 1989-06-19 1991-01-30 Toshiba Corp Pattern forming method
JPH05232707A (en) * 1991-11-22 1993-09-10 Internatl Business Mach Corp <Ibm> Positive resist image forming method
JPH08190204A (en) * 1994-11-11 1996-07-23 Nec Corp Photosensitive composition for silylation and forming method for fine pattern
JP2009016653A (en) * 2007-07-06 2009-01-22 Tokyo Electron Ltd Substrate processing method and computer-readable storage medium
CN109669323A (en) * 2018-12-11 2019-04-23 中国科学院光电技术研究所 One kind realizing large area super resolution lithography method based on structure of resonant cavity

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0321956A (en) * 1989-06-19 1991-01-30 Toshiba Corp Pattern forming method
JPH05232707A (en) * 1991-11-22 1993-09-10 Internatl Business Mach Corp <Ibm> Positive resist image forming method
JPH08190204A (en) * 1994-11-11 1996-07-23 Nec Corp Photosensitive composition for silylation and forming method for fine pattern
JP2009016653A (en) * 2007-07-06 2009-01-22 Tokyo Electron Ltd Substrate processing method and computer-readable storage medium
CN109669323A (en) * 2018-12-11 2019-04-23 中国科学院光电技术研究所 One kind realizing large area super resolution lithography method based on structure of resonant cavity

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