JPH02125401A - Varistor - Google Patents

Varistor

Info

Publication number
JPH02125401A
JPH02125401A JP63138115A JP13811588A JPH02125401A JP H02125401 A JPH02125401 A JP H02125401A JP 63138115 A JP63138115 A JP 63138115A JP 13811588 A JP13811588 A JP 13811588A JP H02125401 A JPH02125401 A JP H02125401A
Authority
JP
Japan
Prior art keywords
varistor
forming
faces
sintering
surge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63138115A
Other languages
Japanese (ja)
Inventor
Yukiteru Kikuchi
菊地 幸輝
Takeshi Suzuki
武志 鈴木
Takamichi Momoki
桃木 孝道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marcon Electronics Co Ltd
Original Assignee
Marcon Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marcon Electronics Co Ltd filed Critical Marcon Electronics Co Ltd
Priority to JP63138115A priority Critical patent/JPH02125401A/en
Publication of JPH02125401A publication Critical patent/JPH02125401A/en
Pending legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

PURPOSE:To reduce the shrinkage distortion of the outer surface of a material at the time of sintering and to obtain a varistor having excellent surge resistance by forming the outer surface of a varistor material of high formation density layer. CONSTITUTION:A disclike varistor material 3 is composed by incorporating, for example, zinc oxide as a main ingredient, employing ceramic powder suitably added with metal oxide to the zinc oxide to provide notches 1 of oblique outer peripheral edges at both front and rear faces, and forming the outer surfaces of the notches 1 in thicknesswise direction of high formation density layers 2, and electrodes 4 are formed, after sintering, on both front and rear faces of the material 3. As the material 3 forming means of the above structure, oblique protrusions 10, 11 formed from the inner faces on the outer peripheral edges of pressed faces 8, 9 of upper and lower punches 6, 7 for forming a molding press mold 5 are employed to press ceramic powder 12 by the faces 8, 9. The outer surfaces are formed of the layers 2 to largely reduce the remaining strain of the outer surface at the time of sintering and to prevent microcrack from occurring at the time of application of surge.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、素体構成を改良したバリスタにlする。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention provides a varistor with an improved element structure.

(従来の技術) 従来、−膜化しているバリスタは、例えば酸化曲鉛を主
成分とし、これに数種類の金属酸化部を添加混合したセ
ラミック粉末を円板状に成形し、しかるのち、焼結して
得たバ□′リスタ素体の表裏両面に電極を形成し、この
電極から引出端子を導出し、この引出端子の先端部を露
出して樹脂などの外装を施した構成からなっている。
(Prior art) Conventionally, film-formed varistors are made by forming ceramic powder, which is made mainly of curved lead oxide and mixed with several types of metal oxide parts, into a disk shape, and then sintering it. Electrodes are formed on both the front and back sides of the barristor body obtained by this process, a lead-out terminal is led out from the electrode, and the tip of the lead-out terminal is exposed and coated with resin or other material. .

上記バリスタを構成する前記バリスタ素体は、一般に第
6図に示すようにプレス金型31を用い、このプレス金
型31の上バンチ32.下パンチ33Iilにセラミッ
ク粉末34を挾み、前記上パンチ32と下パンチ33m
でセラミック粉末34を押圧して成形するわけであるが
、上バンチ32と下パンチ33それぞれのプレス面35
.36は平面状であるため、第7図に示ずように成形さ
れたバリスタ素体37は表裏両面が平らな、例えば円板
状からなるものとなる。
The varistor body constituting the varistor generally uses a press die 31 as shown in FIG. 6, and an upper bunch 32. The ceramic powder 34 is sandwiched between the lower punch 33Iil, and the upper punch 32 and the lower punch 33m
The ceramic powder 34 is pressed and formed, and the pressing surfaces 35 of the upper bunch 32 and lower punch 33 are
.. Since numeral 36 is flat, the varistor body 37 formed as shown in FIG. 7 has a flat front and back surface, for example, a disk shape.

しかして、このようにして成形されたバリスタ素体35
の成形密度はどの部分も同じであるが、焼結の際の熱収
縮過程で外周部の収縮による引張り応力が他の部分と比
較して大きいため、外周部に収縮歪みが残留する結果と
なっている。
Therefore, the varistor body 35 formed in this way
Although the molding density is the same in all parts, the tensile stress due to shrinkage in the outer periphery during the heat shrinkage process during sintering is larger than in other parts, resulting in residual shrinkage strain in the outer periphery. ing.

そのため、製品化され各種msに組み込んで使用する過
程でのサージ印加時、外周部にマイクロクラック(結晶
粒界がはなれる現象)が発生する問題をかかえていた。
Therefore, when a surge is applied during the process of commercializing the product and using it by incorporating it into various ms, there has been a problem in that microcracks (a phenomenon in which crystal grain boundaries separate) occur on the outer periphery.

したがって、その後のサージ印加によってマイクロクラ
ンク部に放電現象をおこし、バリス夕素体を構成する酸
化物がイオン化し、抵抗値が減少しショート破壊となり
、バリスタとしての機能を喪失してしまう危険性があっ
た。
Therefore, there is a risk that the subsequent application of a surge will cause a discharge phenomenon in the micro crank part, ionize the oxides that make up the varistor element, reduce the resistance value, cause short-circuit damage, and cause the varistor to lose its function. there were.

(発明が解決しようとする課題) 以上のように従来のバリスタは、バリスタ素体の焼結時
、外周部に収縮歪みが残留する結果、サージ印加時、マ
イクロクラックの発生によるサージ耐量の劣化となるバ
リスタとして致命的な欠点を誘発するものとなっていた
(Problems to be Solved by the Invention) As described above, in conventional varistors, shrinkage strain remains on the outer periphery during sintering of the varistor body, and as a result, when a surge is applied, the surge resistance deteriorates due to the generation of microcracks. As a ballista, this caused a fatal flaw.

本発明は、上記の点に鑑みてなされたちので、バリスタ
素体の焼結時における素体外周部の収縮歪みを減少させ
、サージ耐量の優れに□バリスタを提供することを目的
とするもめである。
The present invention has been made in view of the above-mentioned points, and it is an object of the present invention to provide a varistor with excellent surge resistance by reducing the shrinkage distortion of the outer periphery of the varistor body during sintering. be.

[発明の構成] (課題を解決するための手段) 本発明によるバリスタは、バリスタ素体構成として、こ
のバリスタ素体外周部を高成形密度層としたことを特徴
とするものである。
[Structure of the Invention] (Means for Solving the Problems) The varistor according to the present invention is characterized in that, as a varistor element structure, the outer periphery of the varistor element body is a high-density layer.

(作 用) 以上の構成からなるバリスタによれば、バリスタ素体の
外周部の成形密度が他の部分と比較して高密度化されて
いるため、焼結時この部分の収縮を小さくでき、収縮歪
みの残留を減少することが可能となる。
(Function) According to the varistor having the above configuration, since the molding density of the outer periphery of the varistor body is higher than that of other parts, shrinkage of this part can be reduced during sintering. It becomes possible to reduce residual shrinkage strain.

(実施例) 以下、本発明の一実施例につき説明する。(Example) An embodiment of the present invention will be described below.

すなわち、例えば酸化亜鉛を主成分とし、これにMGO
,N io、MnO,coo、cuo。
That is, for example, zinc oxide is the main component, and MGO is added to this.
,Nio,MnO,coo,cuo.

Cab、sro、AQo、81203,5b203  
、TiO2、Crz  03  、  Fe203  
Cab, sro, AQo, 81203, 5b203
, TiO2, Crz03, Fe203
.

AfI203 、 S io2. SnO2,ZrO2
などの金属酸化物を適宜添加したセラミック粉末を用い
、第1図に示すように、表裏両面の外周縁が傾斜状から
なる殺がれ部1とし、この殺がれ部1の厚み方向となる
外周部を高成形密度層2とした円板状のバリスタ素体3
#li成とし、焼結後このバリスタ素体3衷裏両面に電
極4を形成してなるものである。
AfI203, S io2. SnO2, ZrO2
As shown in Fig. 1, using ceramic powder to which metal oxides such as Disc-shaped varistor body 3 with high mold density layer 2 on the outer periphery
After sintering, electrodes 4 are formed on both sides of the varistor body 3.

なお、上記構成になる表裏両面の外周縁が傾斜状からな
る殺がれ部1の厚み方向となる外周部を高成形!t11
!2としたバリスタ素体3形成手段としては、第2図に
示すように成形プレス金型5を構成する上バンチ6及び
下バンチそれぞれのプレス面8.9の外周縁を内面から
傾斜した突起状10.11としたものを用い、セラミッ
ク粉末12を前記プレス面8,9で押圧するものである
In addition, the outer periphery in the thickness direction of the cut-off portion 1 whose outer periphery edges on both the front and back sides of the above structure are sloped is highly molded! t11
! As shown in FIG. 2, the means for forming the varistor body 3 described in No. 2 is formed by forming the outer periphery of the press surfaces 8 and 9 of each of the upper and lower bunches 6 and 9 of the press mold 5 into a protrusion shape that is inclined from the inner surface. 10.11 is used to press the ceramic powder 12 with the press surfaces 8 and 9.

しかして、上記構成になるバリスタ素体3は電極4部よ
り引出端子を引出し、単板構造として使用するか、又は
必要に応じ複数個積み重ねて使用する。
Therefore, the varistor body 3 having the above-mentioned structure has a lead-out terminal drawn out from the electrode 4 portion and is used as a single-plate structure, or a plurality of varistor bodies 3 are stacked as necessary.

以上のようなバリスタ素体3構成を有するバリスタによ
れば、バリスタ索体3の外周部を高成形密度172とし
ているため、焼結時の熱収縮による引張り応力による外
周部の歪み残留を大幅に減らすことができる。
According to the varistor having the varistor body 3 configuration as described above, since the outer periphery of the varistor cord 3 has a high molding density of 172, residual distortion in the outer periphery due to tensile stress due to thermal contraction during sintering can be greatly reduced. can be reduced.

したがって、使用中のサージ印加時、外周部のマイクロ
クラックの発生を防止できる。
Therefore, when a surge is applied during use, it is possible to prevent microcracks from occurring on the outer periphery.

よって、バリスタにおけるサージ耐i特性が大幅に向上
できる。
Therefore, the surge resistance characteristics of the varistor can be significantly improved.

次に、ff11図に示すバリスタ索体構成からなる本発
明(A)と第7図に示すバリスタ索体構成からなる従来
例(B)におけるサージ耐量の比較について述べる。
Next, a comparison of the surge resistance between the present invention (A) having the ballista cable structure shown in FIG. ff11 and the conventional example (B) having the ballista cable structure shown in FIG. 7 will be described.

すなわち、本発明(A)及び従来例(B)とも酸化伸鉛
を主成分とするもので、直径20 m 。
That is, both the present invention (A) and the conventional example (B) mainly contain expanded lead oxide and have a diameter of 20 m.

厚さ1Mのバリスタ素体で、電極は銀電極で、′I5極
にリード線を取着後エポキシ樹脂外装を施したものを試
料とし、周波数8×20μsecで5000A〜100
00Aのサージをそれぞれ5回印加したときの印加サー
ジ恒に対するバリスフ破壊状況を調べた結果、下表のと
おりであった。 なお、試料は各10個である。
The sample was a varistor body with a thickness of 1M, the electrode was a silver electrode, a lead wire was attached to the 'I5 pole, and an epoxy resin exterior was applied.
When a surge of 00A was applied 5 times each, the breakdown status of the ball valve was investigated with respect to the applied surge constant, and the results are as shown in the table below. Note that the number of samples was 10 each.

表 上表から明らかなように、従来例(B)はサジ印加ff
lが7000AT−3個、8000Ar811811ざ
らに9000Aで全数が破壊してしまうのに対し、本発
明(A)Ltl 0000A’T”4個の破壊に止まり
、大幅なサージ耐量特性の向上を実証した。
As is clear from the table above, in the conventional example (B), surge application ff
While Ltl 7000AT-3 pieces and 8000Ar811811 were all destroyed at 9000A, only 4 Ltl 0000A'T'' pieces of the present invention (A) were destroyed, demonstrating a significant improvement in surge resistance characteristics.

なお、上記実施例では、バリスタ素体3外周部の高成形
密度層2構成として、バリスタ索体3衷裏両面の外周縁
が傾斜状からなる殺がれ部1としたものを例示して説明
したが、第3図に示すような二重成形プレス金型13を
用い、上パンチ14及び下バンチ15の内側パンチ16
17でレラミック粉末18を一旦押圧した後、第4図に
示すように上パンチ14及び下パンチ15の外側パンチ
19.20のプレス面21゜22を前記内側パンチ16
.17それぞれのプレス面23.24まで押圧するよう
にし、第5図に示すように、表実両面が平らな外周部を
高成形密度層25とした円板状のバリスタ素体26構成
としたものでも同効である。図中27は電極である。
In addition, in the above embodiment, as the structure of the high molding density layer 2 on the outer peripheral part of the varistor body 3, an example in which the outer peripheral edges on both sides of the back side of the varistor cable body 3 are sloped is used as an example. However, by using a double-forming press mold 13 as shown in FIG.
After once pressing the relamic powder 18 in step 17, press surfaces 21° 22 of the outer punches 19 and 20 of the upper punch 14 and the lower punch 15 are pressed against the inner punch 16, as shown in FIG.
.. 17, each of the press surfaces 23 and 24 is pressed, and as shown in FIG. But it has the same effect. In the figure, 27 is an electrode.

また、上記実施例では円板状のバリスタ素体を例示して
説明したが、角板状のバリスタ素体に適用しても同効で
ある。
Further, in the above embodiment, a disc-shaped varistor element body was exemplified and explained, but the same effect can be obtained even if the present invention is applied to a square plate-shaped varistor element body.

さらに、上記実施例では組成として酸化亜鉛を主成分と
したものを例示したが、例えばチタン酸ストロンチウム
、チタン酸バリウム、炭化硅素、酸化鉄などを主成分と
したものに適用できることはもちろんである。
Further, in the above embodiments, a composition containing zinc oxide as the main component was exemplified, but it is of course applicable to compositions containing, for example, strontium titanate, barium titanate, silicon carbide, iron oxide, etc. as the main component.

[発明の効果] 本発明によれば、バリスタ素体外周部の収縮歪みのPU
留が少なくサージ耐量特性を大幅に向上できる実用的価
値の高いバリスタを得ることができる。
[Effects of the Invention] According to the present invention, the shrinkage strain of the PU at the outer periphery of the varistor body
It is possible to obtain a varistor with high practical value that has less retention and can significantly improve surge resistance characteristics.

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図は本発明の一実施例に係り、第1図は
バリスタ素体を示す正面図、第2図は第1図に示すバリ
スタ素体の成形手段を示す説明図、第3図〜第5図は本
発明の他の実施例に係り、第3図及び第4図はバリスタ
素体の成形手段を示す説明図、第5図はバリスタ素体を
示す正面図、第6図及び第7図は従来例に係り、第6図
はバリスタ索体の成形手段を示ず説明図、第7図はバリ
スタ素体を示す1F面図である。 2・・・高成形密度層 3・・・バリスタ索体 特 許  出  願  人 マルコン電子株式会社 第 図 第 図
1 and 2 relate to an embodiment of the present invention, in which FIG. 1 is a front view showing a varistor element, FIG. 2 is an explanatory view showing a means for forming the varistor element shown in FIG. 3 to 5 relate to other embodiments of the present invention, FIGS. 3 and 4 are explanatory diagrams showing the means for forming the varistor element, FIG. 5 is a front view showing the varistor element, and FIG. 7 and 7 relate to a conventional example, FIG. 6 is an explanatory view without showing the means for forming the varistor cable body, and FIG. 7 is a 1F side view showing the varistor body. 2... High mold density layer 3... Varistor cable patent application Hito Marcon Electronics Co., Ltd. Figure Figure

Claims (1)

【特許請求の範囲】[Claims]  外周部を高成形密度層としたバリスタ素体を用いたこ
とを特徴とするバリスタ。
A varistor characterized by using a varistor body whose outer periphery is a high-density layer.
JP63138115A 1988-06-03 1988-06-03 Varistor Pending JPH02125401A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63138115A JPH02125401A (en) 1988-06-03 1988-06-03 Varistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63138115A JPH02125401A (en) 1988-06-03 1988-06-03 Varistor

Publications (1)

Publication Number Publication Date
JPH02125401A true JPH02125401A (en) 1990-05-14

Family

ID=15214310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63138115A Pending JPH02125401A (en) 1988-06-03 1988-06-03 Varistor

Country Status (1)

Country Link
JP (1) JPH02125401A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62141702A (en) * 1985-12-16 1987-06-25 富士電機株式会社 Manufacture of voltage nonlinear resistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62141702A (en) * 1985-12-16 1987-06-25 富士電機株式会社 Manufacture of voltage nonlinear resistor

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