JPH02122546A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH02122546A
JPH02122546A JP27648488A JP27648488A JPH02122546A JP H02122546 A JPH02122546 A JP H02122546A JP 27648488 A JP27648488 A JP 27648488A JP 27648488 A JP27648488 A JP 27648488A JP H02122546 A JPH02122546 A JP H02122546A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
titanium
photoresist
formed
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27648488A
Inventor
Yasuhiko Ozasa
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To reduce re-adhesion of a photoresist upon forming a throughhole for improving the coverage of a stepped portion and eliminating any broken failure of an upper layer wiring, by etching an interlayer insulating film with a titanium or titanium alloy film as a mask after the use of the photoresist film.
CONSTITUTION: A lower layer wiring 12 is formed on a semiconductor substrate 11, and an interlayer insulating film 13 and a titanium or titanium alloy film 14 are successively formed on the same over the entire surface. Then, a photoresist film 15 is formed on the titanium or titanium alloy film 14, and patterned to form an opening section in the photoresist film 15 on the lower layer wiring 12. Using the photoresist film 15, in which the opening section is formed, as a mask, an opening section is formed in the titanium or titanium alloy film 14 by isotropic dry etching, and further the interlayer insulating film 13 is etched to the middle thereof. Further, the photoresist film 15 is removed by anisotropic etching, and the interlayer insulating film 13 which is etched to the middle is etched to expose a lower layer wiring 12, and hence complete the through-hole. With such process there is eliminated a wire broken failure on the upper layer wiring 16 deposited thereafter.
COPYRIGHT: (C)1990,JPO&Japio
JP27648488A 1988-10-31 1988-10-31 Manufacture of semiconductor device Pending JPH02122546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27648488A JPH02122546A (en) 1988-10-31 1988-10-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27648488A JPH02122546A (en) 1988-10-31 1988-10-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH02122546A true true JPH02122546A (en) 1990-05-10

Family

ID=17570096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27648488A Pending JPH02122546A (en) 1988-10-31 1988-10-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH02122546A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5470790A (en) * 1994-10-17 1995-11-28 Intel Corporation Via hole profile and method of fabrication
US5747879A (en) * 1995-09-29 1998-05-05 Intel Corporation Interface between titanium and aluminum-alloy in metal stack for integrated circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5470790A (en) * 1994-10-17 1995-11-28 Intel Corporation Via hole profile and method of fabrication
WO1996012295A1 (en) * 1994-10-17 1996-04-25 Intel Corporation A novel via hole profile and method of fabrication
GB2308234A (en) * 1994-10-17 1997-06-18 Intel Corp A novel via hole profile and method fabrication
US5874358A (en) * 1994-10-17 1999-02-23 Intel Corporation Via hole profile and method of fabrication
GB2308234B (en) * 1994-10-17 1999-04-14 Intel Corp A novel via hole profile and method fabrication
US5747879A (en) * 1995-09-29 1998-05-05 Intel Corporation Interface between titanium and aluminum-alloy in metal stack for integrated circuit

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