JPH0212036B2 - - Google Patents

Info

Publication number
JPH0212036B2
JPH0212036B2 JP58174212A JP17421283A JPH0212036B2 JP H0212036 B2 JPH0212036 B2 JP H0212036B2 JP 58174212 A JP58174212 A JP 58174212A JP 17421283 A JP17421283 A JP 17421283A JP H0212036 B2 JPH0212036 B2 JP H0212036B2
Authority
JP
Japan
Prior art keywords
semiconductor
layer
laser device
manufacturing
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58174212A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5976492A (ja
Inventor
Shinji Tsuji
Takao Mori
Konen Doi
Yutaka Takeda
Motonao Hirao
Michiharu Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17421283A priority Critical patent/JPS5976492A/ja
Publication of JPS5976492A publication Critical patent/JPS5976492A/ja
Publication of JPH0212036B2 publication Critical patent/JPH0212036B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
JP17421283A 1983-09-22 1983-09-22 半導体レ−ザ−装置 Granted JPS5976492A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17421283A JPS5976492A (ja) 1983-09-22 1983-09-22 半導体レ−ザ−装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17421283A JPS5976492A (ja) 1983-09-22 1983-09-22 半導体レ−ザ−装置

Publications (2)

Publication Number Publication Date
JPS5976492A JPS5976492A (ja) 1984-05-01
JPH0212036B2 true JPH0212036B2 (enrdf_load_stackoverflow) 1990-03-16

Family

ID=15974682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17421283A Granted JPS5976492A (ja) 1983-09-22 1983-09-22 半導体レ−ザ−装置

Country Status (1)

Country Link
JP (1) JPS5976492A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3531722B2 (ja) * 1998-12-28 2004-05-31 信越半導体株式会社 発光ダイオードの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329685A (en) * 1976-08-31 1978-03-20 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Also Published As

Publication number Publication date
JPS5976492A (ja) 1984-05-01

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