JPH02108301A - Lambda/4 type switching circuit - Google Patents

Lambda/4 type switching circuit

Info

Publication number
JPH02108301A
JPH02108301A JP63261887A JP26188788A JPH02108301A JP H02108301 A JPH02108301 A JP H02108301A JP 63261887 A JP63261887 A JP 63261887A JP 26188788 A JP26188788 A JP 26188788A JP H02108301 A JPH02108301 A JP H02108301A
Authority
JP
Japan
Prior art keywords
input
diode
output terminal
terminal
inductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63261887A
Other languages
Japanese (ja)
Inventor
Kazuhide Deguchi
Akihisa Okawa
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63261887A priority Critical patent/JPH02108301A/en
Publication of JPH02108301A publication Critical patent/JPH02108301A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To decrease a transmission loss by serially connecting an inductor to have an inductance value causing parallel resonance for a diode on an input terminal side with a direct current cutting capacitor, and then connecting them in parallel.
CONSTITUTION: When a voltage is applied to a bias edge 4, a current determined by the impressed voltage value is guided through an RF choke coil 6 by way of a diode 7, a λ/4 phase line 8, a diode 12 to a ground. Consequently, a high frequency signal inputted from an input edge 1 is guided to an input/output terminal 2 in a lowly lost condition, and the section between the input/output terminal 2 and an output terminal 3 is made into a disconnected condition. When a bias is not impressed to a bias terminal 4, the parallel resonance determined by the inductance of an inductor 9a, the capacity of the diode 7, the inductance of an inductor 9b, and the capacity of a diode 12 is generated. Consequently, the section between the input terminal 1 and the input/output terminal 2 is disconnected, and the high frequency signal inputted from the input terminal 1 is guided to the output terminal 3 in the lowly lost condition.
COPYRIGHT: (C)1990,JPO&Japio
JP63261887A 1988-10-17 1988-10-17 Lambda/4 type switching circuit Pending JPH02108301A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63261887A JPH02108301A (en) 1988-10-17 1988-10-17 Lambda/4 type switching circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63261887A JPH02108301A (en) 1988-10-17 1988-10-17 Lambda/4 type switching circuit

Publications (1)

Publication Number Publication Date
JPH02108301A true JPH02108301A (en) 1990-04-20

Family

ID=17368146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63261887A Pending JPH02108301A (en) 1988-10-17 1988-10-17 Lambda/4 type switching circuit

Country Status (1)

Country Link
JP (1) JPH02108301A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289142A (en) * 1992-03-31 1994-02-22 Raytheon Company Transmit/receive switch for phased array antenna
JPH06197040A (en) * 1992-12-26 1994-07-15 Murata Mfg Co Ltd High frequency switch
JPH06197038A (en) * 1992-12-22 1994-07-15 Murata Mfg Co Ltd High frequency switch
US5499000A (en) * 1994-05-17 1996-03-12 Murata Manufacturing Co., Ltd. High-frequency switch
US5634200A (en) * 1993-03-30 1997-05-27 Sony Corporation Antenna duplexer and transmitting/receiving apparatus using the same
WO1998056060A1 (en) * 1997-06-03 1998-12-10 Matsushita Electric Industrial Co., Ltd. Two-frequency switch, device using two-frequency antenna in common, and mobile radio communication equipment for two-frequency bands using the device
WO2000018026A1 (en) * 1998-09-17 2000-03-30 Siemens Aktiengesellschaft Multiband antenna switcher
WO2001022523A1 (en) * 1999-09-21 2001-03-29 Kabushiki Kaisha Toyota Chuo Kenkyusho High-frequency switch circuit
JP2002280802A (en) * 2001-03-15 2002-09-27 Hitachi Metals Ltd Switch circuit
US6847269B2 (en) 2000-03-15 2005-01-25 Hitachi Metals, Ltd. High-frequency module and wireless communication device
US7253702B2 (en) 2000-11-01 2007-08-07 Hitachi Metals, Ltd. High-frequency switch module
JP2007529165A (en) * 2003-10-30 2007-10-18 アバゴ・テクノロジーズ・ジェネラル・アイピー(シンガポール)プライベート・リミテッド Thin film acoustic coupling transformer with increased common mode rejection.
US7363020B2 (en) 2004-08-20 2008-04-22 Mitsubishi Denki Kabushiki Kaisha Diode mixer
US7468543B2 (en) 2003-09-19 2008-12-23 Kabushiki Kaisha Toshiba Semiconductor device, communication device, and semiconductor device inspecting method

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289142A (en) * 1992-03-31 1994-02-22 Raytheon Company Transmit/receive switch for phased array antenna
JPH06197038A (en) * 1992-12-22 1994-07-15 Murata Mfg Co Ltd High frequency switch
JPH06197040A (en) * 1992-12-26 1994-07-15 Murata Mfg Co Ltd High frequency switch
US5473293A (en) * 1992-12-26 1995-12-05 Murata Manufacturing Co., Ltd. High-frequency switch
US5634200A (en) * 1993-03-30 1997-05-27 Sony Corporation Antenna duplexer and transmitting/receiving apparatus using the same
US5499000A (en) * 1994-05-17 1996-03-12 Murata Manufacturing Co., Ltd. High-frequency switch
WO1998056060A1 (en) * 1997-06-03 1998-12-10 Matsushita Electric Industrial Co., Ltd. Two-frequency switch, device using two-frequency antenna in common, and mobile radio communication equipment for two-frequency bands using the device
US6496083B1 (en) 1997-06-03 2002-12-17 Matsushita Electric Industrial Co., Ltd. Diode compensation circuit including two series and one parallel resonance points
WO2000018026A1 (en) * 1998-09-17 2000-03-30 Siemens Aktiengesellschaft Multiband antenna switcher
US6795714B1 (en) 1998-09-17 2004-09-21 Siemens Aktiengesellschaft Multiband antenna switcher
WO2001022523A1 (en) * 1999-09-21 2001-03-29 Kabushiki Kaisha Toyota Chuo Kenkyusho High-frequency switch circuit
EP2197120A2 (en) 2000-03-15 2010-06-16 Hitachi Metals, Ltd. High-frequency module and wireless communication device
US6847269B2 (en) 2000-03-15 2005-01-25 Hitachi Metals, Ltd. High-frequency module and wireless communication device
US7026887B2 (en) 2000-03-15 2006-04-11 Hitachi Metals, Ltd High-frequency composite part and wireless communications device comprising it
US7253702B2 (en) 2000-11-01 2007-08-07 Hitachi Metals, Ltd. High-frequency switch module
EP2437400A1 (en) 2000-11-01 2012-04-04 Hitachi Metals, Ltd. High-frequency switch module
JP2002280802A (en) * 2001-03-15 2002-09-27 Hitachi Metals Ltd Switch circuit
US7468543B2 (en) 2003-09-19 2008-12-23 Kabushiki Kaisha Toshiba Semiconductor device, communication device, and semiconductor device inspecting method
JP2007529165A (en) * 2003-10-30 2007-10-18 アバゴ・テクノロジーズ・ジェネラル・アイピー(シンガポール)プライベート・リミテッド Thin film acoustic coupling transformer with increased common mode rejection.
JP4796501B2 (en) * 2003-10-30 2011-10-19 アバゴ・テクノロジーズ・ジェネラル・アイピー(シンガポール)プライベート・リミテッド Thin film acoustic coupling transformer with increased common mode rejection.
US7363020B2 (en) 2004-08-20 2008-04-22 Mitsubishi Denki Kabushiki Kaisha Diode mixer

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