JPH02105954A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPH02105954A
JPH02105954A JP63257083A JP25708388A JPH02105954A JP H02105954 A JPH02105954 A JP H02105954A JP 63257083 A JP63257083 A JP 63257083A JP 25708388 A JP25708388 A JP 25708388A JP H02105954 A JPH02105954 A JP H02105954A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory
block
defective block
host
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63257083A
Other languages
Japanese (ja)
Inventor
Katsunori Tanaka
Tomoyuki Mori
Keiichi Kaneko
Mikio Oshiro
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP63257083A priority Critical patent/JPH02105954A/en
Publication of JPH02105954A publication Critical patent/JPH02105954A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To use a memory element which is discarded conventionally and to improve the yield of manufactured memory elements by replacing a defective block of a 1st semiconductor memory part with a good block of a 2nd semiconductor memory part according to defective block information in a nonvolatile storage part.
CONSTITUTION: The 1st semiconductor memory part 1 is accessed (read/written) directly from a host and the 2nd semiconductor memory part 2 is accessed instead when the host tries to access the defective block of the 1st semiconductor memory part 1. The nonvolatile storage part 3 holds defective block information on the 1st semiconductor memory part 1. A control part 4 performs control so that when the host tries to access the defective block of the 1st semiconductor memory block 1, the good block of the 2nd semiconductor memory part 2 is accessed instead. Consequently, memory elements which are discarded before are made usable to improve the yield of manufactured memory elements substantially.
COPYRIGHT: (C)1990,JPO&Japio
JP63257083A 1988-10-14 1988-10-14 Semiconductor memory device Pending JPH02105954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63257083A JPH02105954A (en) 1988-10-14 1988-10-14 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63257083A JPH02105954A (en) 1988-10-14 1988-10-14 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPH02105954A true JPH02105954A (en) 1990-04-18

Family

ID=17301508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63257083A Pending JPH02105954A (en) 1988-10-14 1988-10-14 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPH02105954A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509304A (en) * 2002-12-09 2006-03-16 サンディスク コーポレイション Zone boundary alignment for defects in non-volatile memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509304A (en) * 2002-12-09 2006-03-16 サンディスク コーポレイション Zone boundary alignment for defects in non-volatile memory

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