JPH0153575B2 - - Google Patents
Info
- Publication number
- JPH0153575B2 JPH0153575B2 JP59074704A JP7470484A JPH0153575B2 JP H0153575 B2 JPH0153575 B2 JP H0153575B2 JP 59074704 A JP59074704 A JP 59074704A JP 7470484 A JP7470484 A JP 7470484A JP H0153575 B2 JPH0153575 B2 JP H0153575B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- reaction
- gas
- clean
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は、真空蒸着装置、CVD装置、ドライ
エツチング装置のような密閉室内に反応を行わせ
る各種反応装置の清掃方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to a method for cleaning various reaction apparatuses in which a reaction is carried out in a closed chamber, such as a vacuum evaporation apparatus, a CVD apparatus, and a dry etching apparatus.
電子ビームを用いた真空蒸着装置、減圧CVD
装置、プラズマCVD装置、ドライエツチング装
置は半導体工業を始め各種工業に多く用いられて
いる。これらの装置において処理される材料は高
純度のものが多く従つて反応室の内部は清浄なこ
とが要求される。しかるに例えば電子ビーム蒸着
の際にビームの衝突により飛散する蒸着材料の粒
子、CVD法における反応生成物、あるいはドラ
イエツチング装置でエツチングされた材料の粒子
が反応室内壁に付着する。これらの付着物はガス
の吸着などにより変質し、次の反応が行われる際
に反応室内のふん囲気に混入して処理材料を汚染
することがある。特に反応に用いる材料が変わる
際に前の反応時に付着物は完全に清掃除去する提
供がある。しかし、反応室内には清掃の困難な隅
部等があり、付着物が完全に除去できないことが
あつてその対応策が種々探求されている。
Vacuum deposition equipment using electron beam, low pressure CVD
Equipment, plasma CVD equipment, and dry etching equipment are widely used in various industries including the semiconductor industry. Many of the materials processed in these devices are of high purity, and therefore the interior of the reaction chamber is required to be clean. However, for example, particles of the evaporation material scattered by the collision of the beam during electron beam evaporation, reaction products in the CVD method, or particles of the material etched by the dry etching device adhere to the inner wall of the reaction chamber. These deposits change in quality due to gas adsorption, etc., and when the next reaction is performed, they may enter the atmosphere in the reaction chamber and contaminate the processing material. Particularly when changing the materials used in the reaction, there is a provision to completely clean and remove deposits from the previous reaction. However, there are corners in the reaction chamber that are difficult to clean, and deposits cannot be completely removed, so various countermeasures are being sought.
本発明は、このような問題に対して反応室内を
十分に清掃できる方法を提供することを目的とす
る。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method that can sufficiently clean the inside of a reaction chamber to solve such problems.
本発明による清掃方法は、反応室内にそれ自身
不活性の清掃用ガスを導入し、清掃すべき場所に
光を照射して清掃用ガスより活性種を発生させる
ことにより清掃を行うことによつて上記の目的を
達成するものである。
The cleaning method according to the present invention introduces an inert cleaning gas into the reaction chamber and irradiates the area to be cleaned with light to generate active species from the cleaning gas. This achieves the above objectives.
以下、プラズマCVD装置を示した第１図を引
用して本発明の一実施例について説明する。第１
図において、反応室１内にはヒータ２を内蔵する
下部電極３の上に基板、例えばガラス板４が置か
れ、下部電極３に対向して上部電極５が配置され
ている。反応室１内を排気管６より排気して真空
にすると共にガス導入管７よりシラン（SiH4）
ガスおよび添加すべき不純物を含むガスを導入
し、1Torr前後の減圧下で電源８により直流もし
くは高周波電圧を電極３，５間に印加することに
よりグロー放電を発生させ、基板上にアモルフア
スシリコンを堆積させる。この場合反応生成物は
基板４の上ばかりでなく、両電極あるいは反応室
の内壁に付着する。そこでアモルフアスシリコン
膜を生成した基板４を反応室１から取り出し、再
び反応室内を真空にしたのち導入管９よりそれ自
身不活性なCF4ガスを導入する。ついで反応室外
に置かれた波長193nmのArFエキシマレーザの発
振光１０をレンズ１１，１２によりビーム１３と
して反応室１の窓１４から室内に入射する。この
ビーム１３を室内に置かれた鏡１５を反応室外か
らの操作によつて動かすことにより反応室内の各
部を照射する。CF4から光分解反応によりF-イオ
ンを生じ、この活性のF-イオンが例えばSiある
いはSiO2と反応してガス状のSiF4を生じ、排気
管６より排気される。必要により窓１４あるいは
鏡１５の数を増すことによつて反応室１の隅部の
ような手の届かない場所を含めて汚染付着物の除
去を行うことができる。
An embodiment of the present invention will be described below with reference to FIG. 1 showing a plasma CVD apparatus. 1st
In the figure, a substrate, for example a glass plate 4, is placed on a lower electrode 3 containing a heater 2 in a reaction chamber 1, and an upper electrode 5 is placed opposite the lower electrode 3. The reaction chamber 1 is evacuated from the exhaust pipe 6 to create a vacuum, and silane (SiH 4 ) is injected from the gas introduction pipe 7.
A gas and a gas containing impurities to be added are introduced, and a direct current or high frequency voltage is applied between the electrodes 3 and 5 by the power supply 8 under reduced pressure of around 1 Torr to generate a glow discharge, thereby depositing amorphous silicon on the substrate. deposit In this case, the reaction products adhere not only to the substrate 4 but also to both electrodes or the inner wall of the reaction chamber. Then, the substrate 4 on which the amorphous silicon film has been formed is taken out from the reaction chamber 1, and after the reaction chamber is evacuated again, CF 4 gas, which is itself inert, is introduced from the introduction tube 9. Next, the oscillated light 10 of an ArF excimer laser having a wavelength of 193 nm placed outside the reaction chamber is made into a beam 13 by lenses 11 and 12 and enters the reaction chamber 1 through a window 14 . This beam 13 irradiates each part within the reaction chamber by moving a mirror 15 placed inside the reaction chamber by operating from outside the reaction chamber. F - ions are produced from CF 4 through a photodecomposition reaction, and these active F - ions react with, for example, Si or SiO 2 to produce gaseous SiF 4 , which is exhausted from the exhaust pipe 6 . By increasing the number of windows 14 or mirrors 15 if necessary, it is possible to remove contaminants from hard-to-reach places such as the corners of the reaction chamber 1.
本発明はガスに光を照射して発生する活性のイ
オンあるいはラジカルを用いて反応装置の反応室
内の清掃しにくい場所を含めての付着物をガス化
あるいは可能化することによつて清掃を行うもの
で、清浄な状態での処理が要求される各種反応装
置に対して極めて有効に適用できる。また、光を
照射する以前は不活性の、即ちそれ自身不活性の
ガスを用いているので、取扱いが容易であるとと
もに、ガス供給管路等を腐食する虞れがないとい
う効果もある。
The present invention uses active ions or radicals generated by irradiating a gas with light to gasify or make it possible to clean deposits, including those in difficult-to-clean areas in the reaction chamber of a reactor. It can be extremely effectively applied to various reaction devices that require processing in a clean state. Furthermore, since an inert gas is used before being irradiated with light, that is, an inert gas itself, it is easy to handle and there is no risk of corroding gas supply pipes or the like.
第１図は本発明の一実施例のための装置の断面
図である。
１…反応室、９…ガス導入管、１０…ArFエキ
シマレーザ光、１３…光ビーム、１５…鏡。
FIG. 1 is a cross-sectional view of an apparatus for one embodiment of the invention. DESCRIPTION OF SYMBOLS 1...Reaction chamber, 9...Gas introduction pipe, 10...ArF excimer laser beam, 13...Light beam, 15...Mirror.
Claims (1)
にそれ自身は不活性の清掃用ガスを導入し、清掃
すべき場所に光を照射して清掃用ガスより活性種
を発生させることを特徴とする反応装置の清掃方
法。1. A method for cleaning a sealed reaction chamber, which is characterized by introducing a cleaning gas that is itself inert into the reaction chamber, and irradiating light onto the area to be cleaned to generate active species from the cleaning gas. How to clean the reactor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7470484A JPS60220138A (en) | 1984-04-13 | 1984-04-13 | Method for cleaning reaction apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7470484A JPS60220138A (en) | 1984-04-13 | 1984-04-13 | Method for cleaning reaction apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60220138A JPS60220138A (en) | 1985-11-02 |
| JPH0153575B2 true JPH0153575B2 (en) | 1989-11-14 |
Family
ID=13554880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7470484A Granted JPS60220138A (en) | 1984-04-13 | 1984-04-13 | Method for cleaning reaction apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60220138A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06330323A (en) * | 1993-05-18 | 1994-11-29 | Mitsubishi Electric Corp | Production device for semiconductor device and cleaning method therefor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5645802A (en) * | 1979-09-18 | 1981-04-25 | Agency Of Ind Science & Technol | Production of hydrogen from hydrogen sulfide |
-
1984
- 1984-04-13 JP JP7470484A patent/JPS60220138A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5645802A (en) * | 1979-09-18 | 1981-04-25 | Agency Of Ind Science & Technol | Production of hydrogen from hydrogen sulfide |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60220138A (en) | 1985-11-02 |
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