JPH01301180A - Assembling method for semiconductor acceleration sensor - Google Patents
Assembling method for semiconductor acceleration sensorInfo
- Publication number
- JPH01301180A JPH01301180A JP13307888A JP13307888A JPH01301180A JP H01301180 A JPH01301180 A JP H01301180A JP 13307888 A JP13307888 A JP 13307888A JP 13307888 A JP13307888 A JP 13307888A JP H01301180 A JPH01301180 A JP H01301180A
- Authority
- JP
- Japan
- Prior art keywords
- package
- pedestal
- cantilever
- adhesive
- resin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 230000001133 acceleration Effects 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000853 adhesive Substances 0.000 claims abstract description 21
- 230000001070 adhesive effect Effects 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 239000011347 resin Substances 0.000 claims abstract description 20
- 238000003780 insertion Methods 0.000 claims abstract description 18
- 230000037431 insertion Effects 0.000 claims abstract description 18
- 238000000859 sublimation Methods 0.000 claims abstract description 3
- 230000008022 sublimation Effects 0.000 claims abstract description 3
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 abstract description 2
- 239000003822 epoxy resin Substances 0.000 abstract description 2
- 239000006023 eutectic alloy Substances 0.000 abstract description 2
- 229920000647 polyepoxide Polymers 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 14
- 239000004020 conductor Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 240000007643 Phytolacca americana Species 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体片持ばりを用いたひすみゲージ式に
よった″Ｐ導体加Ｍ度センサの組立方法に関し、特に片
持ばりのパッケージへの取付けの改良に力１′Ｄ）ねる
。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for assembling a strain gauge-type "P conductor force sensor using a semiconductor cantilever, and particularly to a method for assembling a P conductor force sensor using a semiconductor cantilever. Force 1'D) to improve the attachment to the
ｉ５図は例えば特開昭６２−２２１１６４ ｇ公報に示
さねた従来の半導体加速度センサの正向−［面図である
。図において、１はシリコンなど半導体からなる片持ば
りて、ＩＡＩ定端近くに溝部１ａか形成されよ部が薄肉
部ｔｂにさオ］ている。このか（内部１ｂ表面玲Ｓには
拡散によりａｈのどニジ抵抗が形成されアリツジｌｒＪ
路にｍ成され、配線３が施されている。４は片持ばりｌ
の司勅端に接合された重り、５は台座６上に支持ばりｌ
の固定端を接合し収容したパッケージ、７はパッケージ
５′ｆ）１ら引出さｔまたリード端子で、配線３端の７
１！極に曾Ｆ１１細線８によりワイヤボンディングされ
ている。９はカバーである。Figure i5 is a front view of a conventional semiconductor acceleration sensor disclosed in, for example, Japanese Unexamined Patent Publication No. 62-221164g. In the figure, reference numeral 1 denotes a cantilever beam made of a semiconductor such as silicon, and a groove portion 1a formed near the fixed end of the IAI is placed in a thin portion tb. Is this (ah throat resistance is formed on the internal 1b surface layer S due to diffusion?
A wiring line 3 is provided. 4 is cantilever l
5 is a support beam l on the pedestal 6.
The fixed end of the package 7 is connected to the fixed end of the package 5'f) 1 and is pulled out from the package 5'f).
1! The poles are wire-bonded with F11 fine wire 8. 9 is a cover.
上記片持ばりｌをパッケージ５内へ組立てるには、ｆＥ
６図に下すようにしていた。片持ばり１はパッケージ５
（ｈ底面に、台座６の高さに等しい間隔８で平何にし
て台座６上に接合しなけれはｔらない。このため、８寸
法の厚さにした受は体１０を台座の底面に置き、台座６
面に接着剤を塗布し、支持ばり１の固定端部を台座６上
に載せ、可動端側を受は体１０上に載せる。つづいて、
接着剤を加熱硬化させる。To assemble the cantilever l into the package 5, fE
I tried to put it down to Figure 6. Cantilever beam 1 is package 5
(It is necessary to connect the body 10 to the bottom surface of the pedestal 6 at intervals of 8 equal to the height of the pedestal 6. Place, pedestal 6
Adhesive is applied to the surface, the fixed end of the support beam 1 is placed on the pedestal 6, and the movable end is placed on the support body 10. Continuing,
Heat and cure the adhesive.
こうして１片持ばり１が接着されると、受は体ＩＯをピ
ンセットなどで側方にずらし、片持ばり１とパッケージ
１の内側壁とのすき間から取出す。After one cantilever beam 1 is bonded in this manner, the body IO of the receiver is shifted laterally using tweezers or the like and taken out from the gap between the cantilever beam 1 and the inner wall of the package 1.
上記のような従来の半導加速度センサの組立方法では、
片持ばり１を台座６上に接合後、受は体ｌＯ′ｆ片狩ば
片持とパッケージ５の内側壁との狭いすき間２通して取
外さねばならず、細心の注意を要し、不注意により、片
持ばり１が極めて薄く機械的強度の少ざい薄肉部１ｂか
ら破損するという問題点があった。In the conventional method of assembling a semiconductor acceleration sensor as described above,
After joining the cantilever beam 1 onto the base 6, the receiver must be removed by passing through the narrow gap 2 between the cantilever beam and the inner wall of the package 5, which requires great care and is unnecessary. If caution is taken, there is a problem in that the cantilever beam 1 is extremely thin and breaks from the thin wall portion 1b, which has low mechanical strength.
また、受は体１０の取出しを容易にするには、片持ばり
１とパッケージ５の内側壁とのすき間２大きくしなけれ
ばならず、外形が大きくなるという問題点があった。Furthermore, in order to facilitate the removal of the body 10 of the receiver, the gap 2 between the cantilever beam 1 and the inner wall of the package 5 must be increased, resulting in a problem that the outer shape becomes larger.
この発明は、このような問題点を解決するためになされ
たものｐ、片持ばりがパッケージ底面に平行を保ち、固
定端部が台座を介しパッケージに接合さね、組立てが容
易で１片持ばりを破損することのない半導体加速度セン
サの組立方法を得ることを目的としている。This invention was made to solve these problems.The cantilever beam remains parallel to the bottom surface of the package, and the fixed end is joined to the package via the pedestal, making it easy to assemble. The object of the present invention is to obtain a method for assembling a semiconductor acceleration sensor without damaging burrs.
（課題を解決するための手段〕
この発明にかかる半導体加速度センサの組立方法は、片
持ばりの固定端部裏面に台座を接合し、パッケージの底
面に上記台座の下端３入れる挿入溝を設け、この挿入ｒ
４に接着剤を塗布して３き、パッケージの底面上に片持
ばりの裏面に上記挿入溝の領域を除き熱分Ｍ樹脂層２Ｎ
看し１片持ばりを熱分解樹脂層に載せ１台座を挿入溝内
の接着剤に押し当て、この接着剤を加熱硬化させて後、
加熱により熱分解樹脂層を昇華除去するものである。(Means for Solving the Problems) A method for assembling a semiconductor acceleration sensor according to the present invention includes: joining a pedestal to the back surface of the fixed end of a cantilever beam; providing an insertion groove into which the lower end 3 of the pedestal is inserted in the bottom surface of the package; This insertion r
4. Apply adhesive to 3, and then place the thermal M resin layer 2N on the back side of the cantilever beam on the bottom of the package, excluding the area of the insertion groove.
Place one cantilever beam on the pyrolytic resin layer, press one pedestal against the adhesive in the insertion groove, heat and harden the adhesive, and then
The pyrolytic resin layer is sublimated and removed by heating.
この発明においては、片持ばりの固定端の台座をパッケ
ージの挿入溝内の接着剤に当て、バツクージ底面上の熱
分解樹脂層上に片持ばりを載せることにより、片持ばり
はパッケージ底面に間隔をあけ平行に維持される。そこ
で、接着剤を加熱硬化すると、片持ばりはこの姿勢に保
持される。つづいて、加熱温度をさらに上昇させると熱
分解樹脂層が昇華除去される。In this invention, the pedestal at the fixed end of the cantilever is placed on the adhesive in the insertion groove of the package, and the cantilever is placed on the pyrolytic resin layer on the bottom of the package, so that the cantilever is attached to the bottom of the package. They are kept spaced apart and parallel. Therefore, when the adhesive is heated and cured, the cantilever beam is held in this position. Subsequently, when the heating temperature is further increased, the pyrolytic resin layer is sublimated and removed.
し実施例〕
第１図から第４図はこの発明による半導体加速度センサ
の組立方法の一実施例を工程順に示す。Embodiment] FIGS. 1 to 4 show an embodiment of a method for assembling a semiconductor acceleration sensor according to the present invention in the order of steps.
加速度センサのパッケージへの組立ては、次のようにす
る。The acceleration sensor is assembled into a package as follows.
第１図は半導体片持ばりの正ＵｋＪ図であり、１〜４．
１ａ、１ｂは上記従来装置と同一のものである。片持ば
り１の固定端部の裏面に、シリコンなどからなる台座１
１を金シリコン共晶合金などで接合する。FIG. 1 is a positive UkJ diagram of a semiconductor cantilever beam, and 1 to 4.
1a and 1b are the same as the conventional device described above. A pedestal 1 made of silicon or the like is placed on the back of the fixed end of the cantilever 1.
1 is bonded using a gold-silicon eutectic alloy or the like.
第２図（ａ）及び（ｂ）にパッケージの平面図及び正面
断面図で示すように、パッケージ化内の底面には、上記
片持ばりｌの台座１１に対応する位置に挿入構凰を設け
ている。バツクージ臣から複数のリード端子７が出され
ている。パッケージ化内の底面に台座挿入溝１２ａの領
域を除いて熱分解樹脂Ｊ＠ １３をその１面がパッケー
ジ底面に平行になるように付着する０この熱分解樹脂層
田の厚さは塗布衆で調整できる。熱分解樹脂層１３の厚
さは１例えば数十ミクロンにする。As shown in the plan view and front sectional view of the package in FIGS. 2(a) and 2(b), an insertion structure is provided on the bottom surface of the package at a position corresponding to the pedestal 11 of the cantilever l. ing. A plurality of lead terminals 7 are coming out from the backbone. A layer of pyrolytic resin J@13 is attached to the bottom surface of the package, excluding the area of the pedestal insertion groove 12a, with one side parallel to the bottom surface of the package.The thickness of this pyrolytic resin layer is determined by the coating material. Can be adjusted. The thickness of the pyrolytic resin layer 13 is 1, for example, several tens of microns.
次に第８図に示すように、パッケージレの挿入溝１２ａ
内にエポキシ樹脂などの接着剤１４を塗布し、片持ばり
１を熱分解樹脂層１３に載せ、台座１１を挿入溝隠面の
接着剤１４に押し当てておく。Next, as shown in FIG. 8, the insertion groove 12a of the package
An adhesive 14 such as epoxy resin is applied inside, the cantilever 1 is placed on the pyrolytic resin layer 13, and the pedestal 11 is pressed against the adhesive 14 on the hidden surface of the insertion groove.
つついて、接着剤１４を加熱（例えば１２５０２時間）
し硬化させる。さらに、例えば１８０Ｃに加熱し、熱分
解樹脂層１３を昇華し除去する。こうして。Poke and heat the adhesive 14 (for example, 12502 hours)
and harden. Furthermore, the pyrolytic resin layer 13 is sublimated and removed by heating to, for example, 180C. thus.
第４図に示すように１片持ばりｌは固定端か台座１１を
介しパッケージνに接合され、バラ乍−ジ稔底面に平行
に保持される。As shown in FIG. 4, one cantilever beam l is joined to the package v via a fixed end or a base 11, and is held parallel to the bottom surface of the rosette.
次に、上記従来の方法と同様にしてリード端子と片持ば
り１の！極とを金属細線８によりワイヤボンディングす
る。Next, the lead terminal and cantilever beam 1 are attached in the same manner as in the conventional method described above. The electrodes are wire-bonded using a thin metal wire 8.
以−仁のようにこの発明によれば、＃？導体片片持りの
固定端部裏向に台座を接合し、パッケージの底面に上記
台座に対ル５する挿入溝を設け、この溝内に接着剤を塗
布し、パッケージ底面に挿入溝の領域を除き熱分解樹脂
層を付着し、支持ばりを熱分解樹脂層に載ぜ１台座を挿
入溝内の接着剤に押し当て、接着剤を加熱硬化させ、後
、加熱して熱分解樹脂層を昇華除去するようにしたので
、片持ばりがパッケージ底面に所要の間隔をあけ平行に
維持され、固定端部が台座を介し接合され、片持ばりを
破損することなく組立てが容易に作業性よく行える。According to this invention, #? A pedestal is bonded to the reverse side of the fixed end of the cantilevered conductor, an insertion groove is provided on the bottom of the package to be paired with the pedestal, an adhesive is applied in this groove, and an area of the insertion groove is formed on the bottom of the package. Place the support beam on the pyrolytic resin layer, press the pedestal against the adhesive in the insertion groove, heat and harden the adhesive, and then heat to remove the pyrolytic resin layer. Since sublimation is removed, the cantilever beam is maintained parallel to the bottom of the package with the required spacing, and the fixed end is joined via the pedestal, making assembly easy and workable without damaging the cantilever beam. I can do it.
第１図ないし第４図はこの発明による牛導体加速良セン
サの組立方法の一実施例を工程順に示し、第１図は半導
体片持ばり部の正面図、第２図（ａ）及び（ｂ）はパッ
ケージ部の平ｆｆｎ ６及び正面断面図、第３図は第２
図のパッケージ内に第１図の片持ばりを載せた状態を示
す正面向面図、第４図は第８図の片持ばりか接着支持さ
れ熱分ｌＰｔ、樹脂層が昇華除去された状態２示す正面
４ｒ血図、第５図は従来の方法により組立てられた半導
体加速度センサの正面面面図、′？Ｒ６図は第５図の加
速度センサの組立途中の状態号示す正面断面図である。
図中、１は半導体片持ばり、ｌａは溝部、１１）は薄肉
部、２はピエゾ抵抗、４は重り、１１は台座、毘はパッ
ケージ、 １２ａは挿入溝、１３は熱分解樹脂層。
１４は接着剤である。
尚１図中同一群号は同一または相当部分を示す。1 to 4 show an embodiment of a method for assembling a cow conductor acceleration sensor according to the present invention in the order of steps, in which FIG. 1 is a front view of a semiconductor cantilever, and FIGS. ) is a flat ffn 6 and front cross-sectional view of the package part, and Fig. 3 is a sectional view of the package part.
A front view showing the state in which the cantilever shown in Fig. 1 is placed in the package shown in the figure, and Fig. 4 shows the state in which the cantilever shown in Fig. 8 is adhesively supported and the resin layer is sublimated and removed by heat lPt. 2 is a front view 4r diagram, and FIG. 5 is a front view of a semiconductor acceleration sensor assembled by a conventional method. Figure R6 is a front sectional view showing the state of the acceleration sensor in Figure 5 during assembly. In the figure, 1 is a semiconductor cantilever beam, la is a groove portion, 11) is a thin wall portion, 2 is a piezoresistor, 4 is a weight, 11 is a pedestal, bi is a package, 12a is an insertion groove, and 13 is a pyrolytic resin layer. 14 is an adhesive. Note that the same group numbers in Figure 1 indicate the same or corresponding parts.
Claims (1)
成しており、上記片持ばりは可動端に重りを設けていて
固定端で台座を介しパツケージ内に接合支持された半導
体加速度センサにおいて、上記片持ばりの固定端部裏面
に台座を接合し、上記パツケージ円の底面に上記台座を
受入れる挿入溝を設け、この溝内に接着剤を塗布し、パ
ツケージ円底面に上記挿入溝の領域を除き熱分解樹脂層
を付着し、上記支持ばりを熱分解樹脂層に載せ上記台座
を上記溝内の接着剤に押し当てておき、この接着剤を加
熱硬化させ、さらに高い温度で上記熱分解樹脂層を加熱
し昇華除去することを特徴とする半導体加速度センサの
組立方法。A semiconductor acceleration sensor in which a plurality of piezoresistors are formed near the fixed end of a semiconductor cantilever, the cantilever has a weight at its movable end, and the fixed end is bonded and supported in a package via a pedestal, A pedestal is joined to the back surface of the fixed end of the cantilever beam, an insertion groove for receiving the pedestal is provided on the bottom of the package circle, adhesive is applied in this groove, and the area of the insertion groove is formed on the bottom of the package circle. The supporting beam is placed on the pyrolytic resin layer, the pedestal is pressed against the adhesive in the groove, the adhesive is cured by heating, and the pyrolytic resin is heated at a higher temperature. A method for assembling a semiconductor acceleration sensor characterized by heating a layer and removing it by sublimation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13307888A JPH01301180A (en) | 1988-05-30 | 1988-05-30 | Assembling method for semiconductor acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13307888A JPH01301180A (en) | 1988-05-30 | 1988-05-30 | Assembling method for semiconductor acceleration sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01301180A true JPH01301180A (en) | 1989-12-05 |
Family
ID=15096333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13307888A Pending JPH01301180A (en) | 1988-05-30 | 1988-05-30 | Assembling method for semiconductor acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01301180A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6169316B1 (en) | 1998-04-06 | 2001-01-02 | Denso Corporation | Semiconductor pressure sensor including sensor chip fixed to package by adhesive |
| JP2007510554A (en) * | 2003-11-03 | 2007-04-26 | アイディーシー、エルエルシー | MEMS device with unreleased thin film portion |
| JP2012026866A (en) * | 2010-07-23 | 2012-02-09 | Denso Corp | Method for manufacturing inertia force sensor |
-
1988
- 1988-05-30 JP JP13307888A patent/JPH01301180A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6169316B1 (en) | 1998-04-06 | 2001-01-02 | Denso Corporation | Semiconductor pressure sensor including sensor chip fixed to package by adhesive |
| JP2007510554A (en) * | 2003-11-03 | 2007-04-26 | アイディーシー、エルエルシー | MEMS device with unreleased thin film portion |
| JP2012026866A (en) * | 2010-07-23 | 2012-02-09 | Denso Corp | Method for manufacturing inertia force sensor |
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