JPH01286306A - Crystal growth device - Google Patents

Crystal growth device

Info

Publication number
JPH01286306A
JPH01286306A JP11554888A JP11554888A JPH01286306A JP H01286306 A JPH01286306 A JP H01286306A JP 11554888 A JP11554888 A JP 11554888A JP 11554888 A JP11554888 A JP 11554888A JP H01286306 A JPH01286306 A JP H01286306A
Authority
JP
Japan
Prior art keywords
tube
inner
reaction
gas
peripheral wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11554888A
Inventor
Yoshihiro Kokubo
Takashi Motoda
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11554888A priority Critical patent/JPH01286306A/en
Publication of JPH01286306A publication Critical patent/JPH01286306A/en
Application status is Pending legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519Inert gas curtains
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/08Reaction chambers; Selection of materials therefor

Abstract

PURPOSE: To prevent reaction gas component from adhering to the inner wall of a reaction tube at the time of crystal growth by making a reaction tube in double-tube structure as well as opening many holes at the peripheral wall of the inner tube of the double-tube, and using space between both tubes as a passage for atmospheric gas so that the atmospheric gas may blow out from many holes at the inner tube peripheral wall into inside of the inner tube.
CONSTITUTION: A reaction tube 21 to react a wafer with material gas is made in double-tube structure which has many hole 24 at the peripheral wall of an inner tube 23 and space between inner and outer tubes is used as a passage 25 for atmospheric gas so that H2 gas 34 flowing down through space between both tubes may blow from the holes 24 into the inner tube. Accordingly, at the time of reaction, the atmospheric gas comes to blow out from the holes 24 at the peripheral wall of the inner tube 23 into this tube and it becomes hard for attachment to adhere to the inner wall of the reaction tube. Hereby, it can restrain generation of film distribution and composition distribution by decreasing turbulence of gas flow inside the reaction tube.
COPYRIGHT: (C)1989,JPO&Japio
JP11554888A 1988-05-12 1988-05-12 Crystal growth device Pending JPH01286306A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11554888A JPH01286306A (en) 1988-05-12 1988-05-12 Crystal growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11554888A JPH01286306A (en) 1988-05-12 1988-05-12 Crystal growth device

Publications (1)

Publication Number Publication Date
JPH01286306A true JPH01286306A (en) 1989-11-17

Family

ID=14665265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11554888A Pending JPH01286306A (en) 1988-05-12 1988-05-12 Crystal growth device

Country Status (1)

Country Link
JP (1) JPH01286306A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224222A (en) * 1988-11-21 1990-09-06 Fuji Electric Co Ltd Vapor growth apparatus
US5669976A (en) * 1990-12-28 1997-09-23 Mitsubishi Denki Kabushiki Kaisha CVD method and apparatus therefor
WO1998030731A1 (en) * 1997-01-13 1998-07-16 Mks Instruments, Inc. Method and apparatus for reducing deposition of material in the exhaust pipe of a reaction furnace
US6059885A (en) * 1996-12-19 2000-05-09 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film
EP1454346A1 (en) * 2001-10-18 2004-09-08 Chul Soo Byun Method and apparatus for chemical vapor ddeposition capable of preventing contamination and enhancing film growth rate
US9314824B2 (en) 2013-11-08 2016-04-19 Mks Instruments, Inc. Powder and deposition control in throttle valves

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224222A (en) * 1988-11-21 1990-09-06 Fuji Electric Co Ltd Vapor growth apparatus
US5669976A (en) * 1990-12-28 1997-09-23 Mitsubishi Denki Kabushiki Kaisha CVD method and apparatus therefor
US6022811A (en) * 1990-12-28 2000-02-08 Mitsubishi Denki Kabushiki Kaisha Method of uniform CVD
US6059885A (en) * 1996-12-19 2000-05-09 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film
WO1998030731A1 (en) * 1997-01-13 1998-07-16 Mks Instruments, Inc. Method and apparatus for reducing deposition of material in the exhaust pipe of a reaction furnace
US5827370A (en) * 1997-01-13 1998-10-27 Mks Instruments, Inc. Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace
EP1454346A1 (en) * 2001-10-18 2004-09-08 Chul Soo Byun Method and apparatus for chemical vapor ddeposition capable of preventing contamination and enhancing film growth rate
US7156921B2 (en) * 2001-10-18 2007-01-02 Chulsoo Byun Method and apparatus for chemical vapor deposition capable of preventing contamination and enhancing film growth rate
EP1454346A4 (en) * 2001-10-18 2008-03-05 Chul Soo Byun Method and apparatus for chemical vapor ddeposition capable of preventing contamination and enhancing film growth rate
US7485339B2 (en) 2001-10-18 2009-02-03 Chulsoo Byun Method for chemical vapor deposition capable of preventing contamination and enhancing film growth rate
US9314824B2 (en) 2013-11-08 2016-04-19 Mks Instruments, Inc. Powder and deposition control in throttle valves

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