JPH01283839A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH01283839A
JPH01283839A JP11301988A JP11301988A JPH01283839A JP H01283839 A JPH01283839 A JP H01283839A JP 11301988 A JP11301988 A JP 11301988A JP 11301988 A JP11301988 A JP 11301988A JP H01283839 A JPH01283839 A JP H01283839A
Authority
JP
Japan
Prior art keywords
si substrate
polyimide
ic
moisture
inside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11301988A
Inventor
Juri Kato
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP11301988A priority Critical patent/JPH01283839A/en
Publication of JPH01283839A publication Critical patent/JPH01283839A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To prevent invasion of moisture into inside of an IC from the periphery of the IC clip so as to improve humidity resistance and elevate reliability by contacting, in a scribe area, an Si substrate or thermal oxide film on the Si substrate directly with polyimide resin formed at the upper layer.
CONSTITUTION: An ICAL pad 2 is formed on an Si substrate 1, which is covered with a passivation CVD SiO2 3 and CVD Si3N4 and further covered with a polyimide film 5 in a scribe area 6, and there the polyimide 5 contacts directly with the Si substrate 1. Accordingly, moisture invading from the interface 11 is absorbed in the polyimide 5 having high hygroscopicity and does not permeate into the inside. Hereby, moisture and contaminant do not invade inside the IC. which realizes the product with high reliability.
COPYRIGHT: (C)1989,JPO&Japio
JP11301988A 1988-05-10 1988-05-10 Semiconductor device Pending JPH01283839A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11301988A JPH01283839A (en) 1988-05-10 1988-05-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11301988A JPH01283839A (en) 1988-05-10 1988-05-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH01283839A true JPH01283839A (en) 1989-11-15

Family

ID=14601402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11301988A Pending JPH01283839A (en) 1988-05-10 1988-05-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH01283839A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5358883A (en) * 1992-02-03 1994-10-25 Motorola, Inc. Lateral bipolar transistor
US5923072A (en) * 1994-08-19 1999-07-13 Fujitsu Limited Semiconductor device with metallic protective film
US5990491A (en) * 1994-04-29 1999-11-23 Semiconductor Energy Laboratory Co., Ltd. Active matrix device utilizing light shielding means for thin film transistors
US5990542A (en) * 1995-12-14 1999-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6225218B1 (en) 1995-12-20 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
US7163854B2 (en) 1996-11-07 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of a semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5358883A (en) * 1992-02-03 1994-10-25 Motorola, Inc. Lateral bipolar transistor
US5990491A (en) * 1994-04-29 1999-11-23 Semiconductor Energy Laboratory Co., Ltd. Active matrix device utilizing light shielding means for thin film transistors
US6501097B1 (en) 1994-04-29 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5923072A (en) * 1994-08-19 1999-07-13 Fujitsu Limited Semiconductor device with metallic protective film
US6867434B2 (en) 1995-11-17 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display with an organic leveling layer
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
US6787887B2 (en) * 1995-12-14 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7034381B2 (en) 1995-12-14 2006-04-25 Semiconductor Energey Laboratory Co., Ltd. Semiconductor device
US5990542A (en) * 1995-12-14 1999-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6225218B1 (en) 1995-12-20 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US7750476B2 (en) 1995-12-20 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a reliable contact
US7163854B2 (en) 1996-11-07 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of a semiconductor device
US7470580B2 (en) 1996-11-07 2008-12-30 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of a semiconductor device

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