JPH01278746A - Code setting circuit - Google Patents

Code setting circuit

Info

Publication number
JPH01278746A
JPH01278746A JP63109666A JP10966688A JPH01278746A JP H01278746 A JPH01278746 A JP H01278746A JP 63109666 A JP63109666 A JP 63109666A JP 10966688 A JP10966688 A JP 10966688A JP H01278746 A JPH01278746 A JP H01278746A
Authority
JP
Japan
Prior art keywords
transistor
drain
level
voltage
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63109666A
Other languages
Japanese (ja)
Inventor
Kiyonobu Hinooka
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP63109666A priority Critical patent/JPH01278746A/en
Publication of JPH01278746A publication Critical patent/JPH01278746A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve the reliability of a code setting circuit and to make it possible to reduce the consumption power of the circuit by a method wherein the drain and source of a MOS transistor, wherein a gate has a threshold voltage higher than that of an inverter, are connected in parallel to each other correspondingly between the drain end and the source end of each MOS transistor.
CONSTITUTION: It is assumed that a second resistance fuse R2 is cut and there is a leakage current (ie) between a second drain D2 and an earth potential point. But, if a pulse signal SP is applied to a gate point G common to a transistor M3 and a P-channel MOS transistor M4 parallel to the transistor M3 only at the point of time of turning-ON of a power supply to control the transistors M3 and M4 in such a way that they are in an ON-state, a drain voltage VD2 is sharply increased like a pulse. Accordingly, as an output gate voltage VG2 of an inverter I3 is turned to an 'L' level, the transistor M3 is brought into an ON-state, the drain voltage Vp2 is turned to an 'H' level sharply. Once the transistor M3 is brought in this state, the voltage VG2 outputs stably an 'L' level. Therefore, even if there is some leakage current (ie), a code signal S2 is never operated erroneously at an 'H' level. Thereby, the reliability of a code setting circuit is high and moreover, the consumption of the circuit is little.
COPYRIGHT: (C)1989,JPO&Japio
JP63109666A 1988-05-02 1988-05-02 Code setting circuit Pending JPH01278746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63109666A JPH01278746A (en) 1988-05-02 1988-05-02 Code setting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63109666A JPH01278746A (en) 1988-05-02 1988-05-02 Code setting circuit

Publications (1)

Publication Number Publication Date
JPH01278746A true JPH01278746A (en) 1989-11-09

Family

ID=14516085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63109666A Pending JPH01278746A (en) 1988-05-02 1988-05-02 Code setting circuit

Country Status (1)

Country Link
JP (1) JPH01278746A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0466482A2 (en) * 1990-07-10 1992-01-15 Nec Corporation Code setting circuit
US5585759A (en) * 1994-08-17 1996-12-17 Samsung Electronics Co., Ltd. Input buffer of semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0466482A2 (en) * 1990-07-10 1992-01-15 Nec Corporation Code setting circuit
US5585759A (en) * 1994-08-17 1996-12-17 Samsung Electronics Co., Ltd. Input buffer of semiconductor integrated circuit

Similar Documents

Publication Publication Date Title
KR950016001A (en) Low power output buffer
JPH01286618A (en) Output circuit and logic circuit using it
JPH01198120A (en) Decoder circuit
JPH01235412A (en) Pulse signal generation circuit
KR880010367A (en) Output circuit
EP0330823A3 (en) A low-absorption circuit device for controlling a power transistor into the on state
JPH01278746A (en) Code setting circuit
JPH03132115A (en) Semiconductor integrated circuit
JPS61287315A (en) Semiconductor integrated circuit
JPH03134892A (en) Semiconductor device
JPH02188023A (en) Output buffer circuit
JPH01165225A (en) Cmos circuit
JPH02274124A (en) Output circuit for integrated circuit
JPH01228144A (en) Circuit for setting trimming code
JPS6230419A (en) Output circuit
JPH01261918A (en) Semiconductor circuit
JPS63299161A (en) Cmos inverter circuit device
JPH01272230A (en) Semiconductor circuit device
JPS641323A (en) Switching regulator
JPH0289419A (en) Cmos inverter circuit
JPH01321723A (en) Fet series circuit
JPH0399518A (en) Logic circuit
JPH0231215A (en) Dropping circuit for power supply voltage
JPH03175729A (en) Output buffer
JPS59104831A (en) Semiconductor integrated circuit device