JPH01276769A - Insulated gate type semiconductor device - Google Patents

Insulated gate type semiconductor device

Info

Publication number
JPH01276769A
JPH01276769A JP10572488A JP10572488A JPH01276769A JP H01276769 A JPH01276769 A JP H01276769A JP 10572488 A JP10572488 A JP 10572488A JP 10572488 A JP10572488 A JP 10572488A JP H01276769 A JPH01276769 A JP H01276769A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
d2
back
semiconductor device
breakdown voltage
floating base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10572488A
Inventor
Koji Takahashi
Kazuo Yamanaka
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors

Abstract

PURPOSE:To form a back-to-back diode and to protect gate insulation film by forming a p-type floating base deeper than the P<-> type floating base and by allowing N<+> cathode layer to be subject to diffusion formation. CONSTITUTION:Inverse breakdown voltage of a gate protection diode D2 or D2 is determined by the concentration and slope of impurities at a P-N junction J4 of a wide flat area within a bulk formed by first and second cathode areas 14 and 16 and second and third floating base areas 18 and 19. The gate protection diode shown by D2 and D3 in the equivalent circuit of this semiconductor device is formed in back-to-back. When a voltage which is greater than insulation breakdown voltage is applied between the G and S, the D2 and D3 are activated so that no breakdown voltage is produced between the G and S, thus effectively preventing insulation breakdown of the film 7 from being generated.
JP10572488A 1988-04-28 1988-04-28 Insulated gate type semiconductor device Granted JPH01276769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10572488A JPH01276769A (en) 1988-04-28 1988-04-28 Insulated gate type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10572488A JPH01276769A (en) 1988-04-28 1988-04-28 Insulated gate type semiconductor device

Publications (1)

Publication Number Publication Date
JPH01276769A true true JPH01276769A (en) 1989-11-07

Family

ID=14415263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10572488A Granted JPH01276769A (en) 1988-04-28 1988-04-28 Insulated gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPH01276769A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7012307B2 (en) * 2000-04-21 2006-03-14 Winbond Electronics Corp. Output buffer with good ESD protection
WO2013005304A1 (en) * 2011-07-05 2013-01-10 三菱電機株式会社 Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7012307B2 (en) * 2000-04-21 2006-03-14 Winbond Electronics Corp. Output buffer with good ESD protection
WO2013005304A1 (en) * 2011-07-05 2013-01-10 三菱電機株式会社 Semiconductor device
CN103650147A (en) * 2011-07-05 2014-03-19 三菱电机株式会社 Semiconductor device
JPWO2013005304A1 (en) * 2011-07-05 2015-02-23 三菱電機株式会社 Semiconductor device
US9041051B2 (en) 2011-07-05 2015-05-26 Mitsubishi Electric Corporation Semiconductor device
KR101534106B1 (en) * 2011-07-05 2015-07-06 미쓰비시덴키 가부시키가이샤 Semiconductor device
US9640643B2 (en) 2011-07-05 2017-05-02 Mitsubishi Electric Corporation Semiconductor device

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