JPH01268060A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPH01268060A
JPH01268060A JP9540688A JP9540688A JPH01268060A JP H01268060 A JPH01268060 A JP H01268060A JP 9540688 A JP9540688 A JP 9540688A JP 9540688 A JP9540688 A JP 9540688A JP H01268060 A JPH01268060 A JP H01268060A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
number
amorphous semiconductor
gate insulating
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9540688A
Inventor
Koichi Hiranaka
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To reduce the shift of a threshold voltage and to obtain stable switching characteristics, by a method wherein at least a part of a gate insulating film adjacent to an amorphous semiconductor film is formed of a silicon oxynitride film, and a ratio of the number of oxygen atoms to the number of nitrogen atoms in the silicon oxynitride film is within a predetermined range.
CONSTITUTION: A gate electrode 2 is provided on one surface of an amorphous semiconductor film 4 through a gate insulating film 3. A source electrode 7 and a drain electrode 8 are provided on the other surface of the amorphous semiconductor film 4. In such a thin film transistor, at least a part of the gate insulating film 3 which is located at a position neighboring the amorphous semiconductor film 4 comprises a silicon oxide nitride film. The ratio of the number of oxygen atoms to the number of the nitrogen atoms in said silicon oxide nitride is made to be 0.2 or more and 1 or less. In this way, the densities of a capturing level and a defect level in the gate insulating film which is the caused of the drift in the drain current vs. gate voltage characteristic are reduced. Thus, the stable switching characteristic whose shift in threshold voltage value is small can be obtained.
COPYRIGHT: (C)1989,JPO&Japio
JP9540688A 1988-04-20 1988-04-20 Thin film transistor Pending JPH01268060A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9540688A JPH01268060A (en) 1988-04-20 1988-04-20 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9540688A JPH01268060A (en) 1988-04-20 1988-04-20 Thin film transistor

Publications (1)

Publication Number Publication Date
JPH01268060A true true JPH01268060A (en) 1989-10-25

Family

ID=14136792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9540688A Pending JPH01268060A (en) 1988-04-20 1988-04-20 Thin film transistor

Country Status (1)

Country Link
JP (1) JPH01268060A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5500380A (en) * 1993-04-16 1996-03-19 Goldstar Co., Ltd. Method for fabricating thin film transistor
US6461899B1 (en) * 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
JP2007189083A (en) * 2006-01-13 2007-07-26 National Institute For Materials Science Composition evaluating method and physical property evaluating method of nitriding silicon oxide film
JP2009075542A (en) * 2007-04-05 2009-04-09 Semiconductor Energy Lab Co Ltd Display device
JP2011049572A (en) * 1999-01-14 2011-03-10 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
JP2014013948A (en) * 2013-10-25 2014-01-23 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2015233159A (en) * 2010-03-05 2015-12-24 株式会社半導体エネルギー研究所 Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273770A (en) * 1985-09-27 1987-04-04 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273770A (en) * 1985-09-27 1987-04-04 Fujitsu Ltd Semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5500380A (en) * 1993-04-16 1996-03-19 Goldstar Co., Ltd. Method for fabricating thin film transistor
JP2011101029A (en) * 1999-01-14 2011-05-19 Semiconductor Energy Lab Co Ltd Semiconductor device and method of manufacturing the same
JP2011049572A (en) * 1999-01-14 2011-03-10 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
US6461899B1 (en) * 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
US6940124B2 (en) 1999-04-30 2005-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7456474B2 (en) 1999-04-30 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having insulating film
US7855416B2 (en) 1999-04-30 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2007189083A (en) * 2006-01-13 2007-07-26 National Institute For Materials Science Composition evaluating method and physical property evaluating method of nitriding silicon oxide film
JP2009075542A (en) * 2007-04-05 2009-04-09 Semiconductor Energy Lab Co Ltd Display device
US8552948B2 (en) 2007-04-05 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Display device comprising threshold control circuit
JP2015233159A (en) * 2010-03-05 2015-12-24 株式会社半導体エネルギー研究所 Semiconductor device
US9496404B2 (en) 2010-03-05 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2014013948A (en) * 2013-10-25 2014-01-23 Semiconductor Energy Lab Co Ltd Semiconductor device

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