JPH0126192B2 - - Google Patents

Info

Publication number
JPH0126192B2
JPH0126192B2 JP55166084A JP16608480A JPH0126192B2 JP H0126192 B2 JPH0126192 B2 JP H0126192B2 JP 55166084 A JP55166084 A JP 55166084A JP 16608480 A JP16608480 A JP 16608480A JP H0126192 B2 JPH0126192 B2 JP H0126192B2
Authority
JP
Japan
Prior art keywords
region
gate
semiconductor substrate
mask material
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55166084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5789257A (en
Inventor
Tadayoshi Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP55166084A priority Critical patent/JPS5789257A/ja
Publication of JPS5789257A publication Critical patent/JPS5789257A/ja
Publication of JPH0126192B2 publication Critical patent/JPH0126192B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP55166084A 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor Granted JPS5789257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55166084A JPS5789257A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55166084A JPS5789257A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5789257A JPS5789257A (en) 1982-06-03
JPH0126192B2 true JPH0126192B2 (enrdf_load_stackoverflow) 1989-05-22

Family

ID=15824681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55166084A Granted JPS5789257A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5789257A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064473A (ja) * 1983-09-20 1985-04-13 Seiko Epson Corp Ｍｏｓ型トランジスタ

Also Published As

Publication number Publication date
JPS5789257A (en) 1982-06-03

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