JPH0126117Y2 - - Google Patents
Info
- Publication number
- JPH0126117Y2 JPH0126117Y2 JP1983069981U JP6998183U JPH0126117Y2 JP H0126117 Y2 JPH0126117 Y2 JP H0126117Y2 JP 1983069981 U JP1983069981 U JP 1983069981U JP 6998183 U JP6998183 U JP 6998183U JP H0126117 Y2 JPH0126117 Y2 JP H0126117Y2
- Authority
- JP
- Japan
- Prior art keywords
- stem body
- reflector
- stem
- lead
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 230000003287 optical effect Effects 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000008188 pellet Substances 0.000 description 11
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000013307 optical fiber Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
Description
【考案の詳細な説明】
〔考案の技術分野〕
本考案は光半導体装置に関し、特に光フアイバ
結合用の光半導体装置のステムの構造に係る。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to an optical semiconductor device, and particularly to the structure of a stem of an optical semiconductor device for optical fiber coupling.
従来、光フアイバ結合用の光半導体装置は第１
図ａ〜ｄに示すような方法で製造されている。
Conventionally, optical semiconductor devices for optical fiber coupling are
It is manufactured by the method shown in Figures a to d.
まず、第１図ａに示すように貫通孔１ａを有す
る金属製（例えば鉄製）のステム本体１を用意
し、同図ｂに示すようにプレス加工等により上面
に反射板部２を形成する。この反射板部２の開口
径は結合効率（半導体発光素子から放射される光
が光フアイバへ入射する割合）の観点から必要最
小限であることが望ましい。次に、同図ｃに示す
如く、ボンデイング用の第１のリード３1をステ
ム本体１の貫通孔１ａに上下両面から突出するよ
うに挿入した後、ガラス４によつて固着してステ
ム本体１との間を絶縁する。次いで、第２のリー
ド３2を溶接等によつてステム本体１の下面に接
続する。つづいて、金メツキ等の表面処理を施し
て金属ステム５を形成する。つづいて、同図ｄに
示すように、ステム５の反射板部２の底部に半導
体発光素子ペレツト６を固着し、金ワイヤ７を用
いてペレツト６上面と第１のリード３1上端とを
接続した後、ペレツト６を覆うようにシリコーン
樹脂をコートして高温で硬化させステム本体１の
上面からガラスレンズ８ａを有するシエル８を被
せ、その金属部とステム本体１とを溶接すること
により光半導体装置を製造する。 First, as shown in FIG. 1a, a metal (for example, iron) stem body 1 having a through hole 1a is prepared, and as shown in FIG. 1b, a reflecting plate portion 2 is formed on the upper surface by pressing or the like. It is desirable that the aperture diameter of the reflector portion 2 be the minimum necessary from the viewpoint of coupling efficiency (the ratio of light emitted from the semiconductor light emitting device to the optical fiber). Next, as shown in FIG . Insulate between. Next, the second lead 32 is connected to the lower surface of the stem body 1 by welding or the like. Subsequently, surface treatment such as gold plating is performed to form the metal stem 5. Next, as shown in Figure d, a semiconductor light emitting element pellet 6 is fixed to the bottom of the reflector section 2 of the stem 5, and a gold wire 7 is used to connect the upper surface of the pellet 6 to the upper end of the first lead 31 . After that, silicone resin is coated to cover the pellet 6 and cured at high temperature.A shell 8 having a glass lens 8a is placed on the top surface of the stem body 1, and the metal part and the stem body 1 are welded to form an optical semiconductor. Manufacture the device.
第１図ｄ図示の光半導体装置は金属製のステム
本体１にプレス加工等により反射板部２が形成さ
れ、このステム本体１に第１のリード３1が絶縁
されて取付けられるとともに第２のリード３2が
接続されることによりステム５が形成され、この
ステム５の反射板部２の底部に半導体発光素子ペ
レツト６が固着されて、前記第１のリード３1と
接続された構造を有している。 In the optical semiconductor device shown in FIG. 1d, a reflecting plate portion 2 is formed on a metal stem body 1 by pressing or the like, and a first lead 31 is insulated and attached to this stem body 1, and a second lead 31 is insulated and attached to the stem body 1. A stem 5 is formed by connecting the lead 3 2 , and a semiconductor light emitting element pellet 6 is fixed to the bottom of the reflector portion 2 of the stem 5 and connected to the first lead 3 1 . are doing.
〔背景技術の問題点〕
上述したように従来の光フアイバ結合用の光半
導体装置においては、ステム５の反射板部２は金
属製のステム本体１を例えばプレス加工すること
により形成されている。このため、第１図ｃの工
程でボンデイング用の第１のリード３1をガラス
４を用いて固着する際に数百〜千数百℃の高温に
さらされると、反射板部２の表面は変質して鏡面
でなくなる。この結果、金メツキ後の表面も荒れ
ているために光の散乱が大きくなり、光フアイバ
との結合効率を低下させる原因となつている。[Problems with Background Art] As described above, in the conventional optical semiconductor device for optical fiber coupling, the reflection plate portion 2 of the stem 5 is formed by, for example, pressing the metal stem body 1. Therefore, when the first lead 31 for bonding is fixed using the glass 4 in the process shown in FIG. It changes in quality and loses its mirror surface. As a result, the surface after gold plating is also rough, which increases the scattering of light, which causes a reduction in the coupling efficiency with the optical fiber.
本考案は上記事情に鑑みてなされたものであ
り、反射板部の鏡面度を向上させ、光フアイバと
の結合効率を向上し得る光半導体装置を提供しよ
うとするものである。
The present invention has been made in view of the above circumstances, and aims to provide an optical semiconductor device that can improve the specularity of the reflection plate portion and improve the coupling efficiency with an optical fiber.
本考案の光半導体装置は、ステムを構成するス
テム本体に凹部を設け、該凹部に反射板ブロツク
を埋設することにより反射板部を形成したことを
特徴とするものである。
The optical semiconductor device of the present invention is characterized in that a recess is provided in a stem body constituting the stem, and a reflector block is formed in the recess to form a reflector.
こうした光半導体装置によれば、凹部を有する
ステム本体と、反射板ブロツクとを別々に造つて
おき、ステム本体にガラスを用いてリードを固着
した後、反射板ブロツクをステム本体の凹部に埋
設することによりステムの反射板部を形成するこ
とができる。したがつて、反射板ブロツクは高温
にさらされることがなく、表面の鏡面状態を維持
することができ、反射板部からの光の散乱を小さ
くすることができる。 According to such an optical semiconductor device, a stem body having a concave portion and a reflector block are manufactured separately, and after a lead is fixed to the stem body using glass, the reflector block is buried in the concave portion of the stem body. By this, a reflecting plate portion of the stem can be formed. Therefore, the reflector block is not exposed to high temperatures, can maintain a mirror-like surface, and can reduce scattering of light from the reflector.
以下、本考案の実施例を第２図ａ〜ｄに示す製
造工程を併記して説明する。
Hereinafter, embodiments of the present invention will be described with reference to the manufacturing steps shown in FIGS. 2a to 2d.
まず、第２図ａに示す如く、貫通孔と上面中央
にプレス加工によつて形成された凹部１１ａを有
する例えば鉄製のステム本体１１を用意する。こ
のステム本体１１の貫通孔にボンデイング用の第
１のリード１２1を挿入してガラス１３を用いて
固着し、ステム本体１１と絶縁した後、ステム本
体１１の下面に第２のリード１２2を溶接等によ
つて接続する。更に、金メツキ等の表面処理を施
す。これとは別に同図ｂに示す如く、プレス加工
によつて鏡面の反射板部１４が形成された鉄製の
有底の反射板ブロツク１５を用意する。つづい
て、同図ｃに示す如く、この反射板ブロツク１５
をステム本体１１の凹部１１ａに圧入して一体化
した後、表面に金メツキを施してステム１６を形
成する。次に、同図ｄに示す如く、ステム１６の
反射板部１４の底部に対応する反射板ブロツク１
５上に半導体発光素子ペレツト１７を固着した
後、金ワイヤ１８を用いてペレツト１７上面と第
１のリード１２1上端とを接続する。更に、ステ
ム本体１１の上方からガラスレンズ１９ａを有す
るシエル１９を被せ、その金属部とステム本体１
１とを溶接することにより光半導体装置を製造す
る。 First, as shown in FIG. 2a, a stem body 11 made of, for example, iron is prepared, which has a through hole and a recess 11a formed by press working at the center of the upper surface. After inserting the first lead 12 1 for bonding into the through hole of the stem body 11 and fixing it using the glass 13 to insulate it from the stem body 11, the second lead 12 2 is inserted on the lower surface of the stem body 11. Connect by welding, etc. Furthermore, surface treatment such as gold plating is applied. Separately, as shown in FIG. 2B, a bottomed reflector block 15 made of iron and having a mirror-like reflector portion 14 formed therein by press working is prepared. Next, as shown in Figure c, this reflector block 15
is press-fitted into the recess 11a of the stem body 11 and integrated, and then the surface is plated with gold to form the stem 16. Next, as shown in FIG.
After the semiconductor light emitting element pellet 17 is fixed on the semiconductor light emitting device 5, the upper surface of the pellet 17 and the upper end of the first lead 121 are connected using a gold wire 18. Furthermore, a shell 19 having a glass lens 19a is placed over the stem body 11, and the metal part and the stem body 1 are
An optical semiconductor device is manufactured by welding 1 and 1.
第２図ｄ図示の光半導体装置は凹部１１ａを有
するステム本体１１に第１のリード１２1が絶縁
されて取付けられ、第２のリード１２2が接続さ
れ、更にステム本体１１の凹部１１ａに反射板部
１４を有する有底の反射板ブロツク１５を圧入す
ることによりステム１６が形成され、このステム
１６の反射板部１４の底部に対応する反射板ブロ
ツク１５上に半導体発光素子ペレツト１７が固着
されて、前記第１のリード１２1と接続された構
造を有している。 In the optical semiconductor device shown in FIG. 2d, a first lead 12 1 is insulated and attached to a stem body 11 having a recess 11 a , a second lead 12 2 is connected, and a second lead 12 2 is connected to the stem body 11 having a recess 11 a. A stem 16 is formed by press-fitting a bottomed reflector block 15 having a plate portion 14, and a semiconductor light emitting element pellet 17 is fixed onto the reflector block 15 corresponding to the bottom of the reflector portion 14 of the stem 16. It has a structure in which it is connected to the first lead 12 1 .
しかして、上記光半導体装置によれば凹部１１
ａを有するステム本体１１と、鏡面の反射板部１
４を有する反射板ブロツク１５とを別々に造つて
おき、ステム本体１１にガラス１３を用いて第１
のリード１２1を固着した後、反射板ブロツク１
５をスラム本体１１の凹部１１ａに圧入して埋設
することによりステム１６の反射板部１４を形成
することができる。このため、反射板ブロツク１
５は高温にさらされることがなく、反射板部１４
表面が酸化等により変質することはないため、鏡
面状態を維持することができる。この結果、反射
率は従来の約75％と比較して、約95％まで向上
し、光出力向上に大きく寄与した。また、反射板
部１４の開口径を大きくする必要は全くない。こ
のようなことから光フアイバとの結合効率を向上
することができる。 However, according to the optical semiconductor device, the recess 11
a stem body 11 having a shape, and a mirror reflector portion 1
4 and a reflector block 15 are made separately, and the stem body 11 is made of glass 13.
After fixing the lead 12 1 , attach the reflector block 1.
5 is press-fitted into the concave portion 11a of the slam body 11 and buried therein, the reflector portion 14 of the stem 16 can be formed. For this reason, the reflector block 1
5 is not exposed to high temperatures, and the reflector portion 14
Since the surface is not altered by oxidation or the like, it is possible to maintain a mirror-like state. As a result, the reflectance has been improved to approximately 95% compared to the conventional approximately 75%, greatly contributing to the increase in light output. Further, there is no need to increase the opening diameter of the reflection plate section 14. Because of this, the coupling efficiency with the optical fiber can be improved.
なお、本考案の光半導体装置は上記実施例で示
した構造に限らない。例えば、第３図ａに示す如
く、プレス加工等により反射板部２０が形成され
た環状の反射板ブロツク２１を用い、上記実施例
と同様な方法により、同図ｂに示す如く半導体発
光素子ペレツト１７を反射板部２０の底部に対応
するステム本体１１上に固着した構造としてもよ
い。 Note that the optical semiconductor device of the present invention is not limited to the structure shown in the above embodiment. For example, as shown in FIG. 3a, an annular reflector block 21 on which a reflector portion 20 is formed by pressing or the like is used, and a semiconductor light emitting element pellet is formed as shown in FIG. 17 may be fixed on the stem body 11 corresponding to the bottom of the reflector section 20.
しかして、第３図ｂ図示の光半導体装置でも第
２図ｄ図示の光半導体装置と同様に反射板部２０
の反射率を向上することができる。 Therefore, in the optical semiconductor device shown in FIG. 3b, the reflector portion 20 is similar to the optical semiconductor device shown in FIG.
can improve the reflectance of
また、第２図ｄ図示の光半導体装置では半導体
発光素子ペレツト１７に電流を流した際に発生す
る熱が伝導する過程で、反射板ブロツク１５とス
テム本体１１との界面を通過せざるを得ない。し
かし、この界面の熱伝導は両者の接触状態に大き
く左右されるため場合によつては熱伝導が非常に
悪くなり、素子の熱的劣化を加速するおそれがあ
る。更に、電気伝導についても同様な支障があ
り、界面が抵抗成分となつて素子への必要印加電
圧のバラツキを引き起こすおそれもある。 Furthermore, in the optical semiconductor device shown in FIG. 2d, the heat generated when a current is passed through the semiconductor light emitting element pellet 17 has no choice but to pass through the interface between the reflector block 15 and the stem body 11 during the conduction process. do not have. However, since the heat conduction at this interface is greatly influenced by the contact state between the two, the heat conduction may become very poor in some cases, which may accelerate the thermal deterioration of the element. Furthermore, there is a similar problem with electrical conduction, and the interface may become a resistance component, causing variations in the voltage required to be applied to the element.
これに対して、第３図ｂ図示の光半導体装置で
は、半導体発光素子ペレツト１７がステム本体１
１上に直接固着されているので、前述した界面を
通過することなく熱伝導及び電気伝導が行なわれ
る。したがつて、素子の熱的劣化を加速したり、
電気抵抗が不均一となることがない。 On the other hand, in the optical semiconductor device shown in FIG. 3b, the semiconductor light emitting element pellet 17 is attached to the stem body 1.
1, heat and electrical conduction can take place without passing through the aforementioned interface. Therefore, it may accelerate the thermal deterioration of the element,
Electrical resistance does not become non-uniform.
なお、上記実施例では反射板ブロツク１５をス
テム本体１１の凹部１１ａに圧入して埋設した
が、導電性接着剤や電気溶接を併用して反射板ブ
ロツク１５とステム本体１１との一体化を確実に
することもある。 In the above embodiment, the reflector block 15 was press-fitted and buried in the recess 11a of the stem body 11, but it is also possible to ensure the integration of the reflector block 15 and the stem body 11 by using a conductive adhesive or electric welding. Sometimes it is done.
以上詳述した如く、本考案の光半導体装置によ
れば、反射板部の反射率を向上して光フアイバと
の結合効率を向上できるという顕著な効果を奏す
るものである。
As described in detail above, the optical semiconductor device of the present invention has the remarkable effect of improving the reflectance of the reflection plate portion and improving the coupling efficiency with the optical fiber.
第１図ａ〜ｄは従来の光半導体装置を得るため
の工程を示す断面図、第２図ａ〜ｄは本考案の実
施例における光半導体装置を得るための工程を示
す断面図、第３図ａは本考案の他の実施例におけ
る反射板ブロツクの断面図、同図ｂは同反射板ブ
ロツクを用いた光半導体装置の断面図である。
１１……ステム本体、１１ａ……凹部、１２1
……第１のリード、１２2……第２のリード、１
３……ガラス、１４……反射板部、１５……（有
底の）反射板ブロツク、１６……ステム、１７…
…半導体発光素子ペレツト、１８……金ワイヤ、
１９……シエル、１９ａ……ガラスレンズ、２０
……反射板部、２１……（環状の）反射板ブロツ
ク。
1A to 1D are sectional views showing the steps for obtaining a conventional optical semiconductor device; FIGS. 2A to 2D are sectional views showing the steps for obtaining an optical semiconductor device in an embodiment of the present invention; Figure a is a cross-sectional view of a reflector block according to another embodiment of the present invention, and figure b is a cross-sectional view of an optical semiconductor device using the same reflector block. 11...Stem body, 11a...Recess, 12 1
...First lead, 12 2 ...Second lead, 1
3...Glass, 14...Reflector section, 15...(Bottomed) reflector block, 16...Stem, 17...
...Semiconductor light emitting device pellet, 18...Gold wire,
19...Ciel, 19a...Glass lens, 20
...Reflector section, 21... (annular) reflector block.
Claims (1)
取付けられた第１のリード及び該ステム本体に短
絡あるいは絶縁されて取りつけられた第２のリー
ドからなるステムに反射板部を設け、該反射板部
に半導体発光素子を固着し、該半導体発光素子と
前記第１のリードとを接続した光半導体装置にお
いて、前記ステム本体に凹部を設け、該凹部に反
射板ブロツクを埋設して反射板部を形成したこと
を特徴とする光半導体装置。 A reflector part is provided on a stem consisting of a metal stem body, a first lead attached insulated from the stem body, and a second lead short-circuited or insulated from the stem body, and the reflector plate part In an optical semiconductor device in which a semiconductor light emitting element is fixed to the stem body and the semiconductor light emitting element and the first lead are connected, a recess is provided in the stem body, and a reflector block is embedded in the recess to form a reflector part. An optical semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983069981U JPS59176166U (en) | 1983-05-11 | 1983-05-11 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983069981U JPS59176166U (en) | 1983-05-11 | 1983-05-11 | Optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59176166U JPS59176166U (en) | 1984-11-24 |
| JPH0126117Y2 true JPH0126117Y2 (en) | 1989-08-04 |
Family
ID=30200129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1983069981U Granted JPS59176166U (en) | 1983-05-11 | 1983-05-11 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59176166U (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1387412B1 (en) * | 2001-04-12 | 2009-03-11 | Matsushita Electric Works, Ltd. | Light source device using led, and method of producing same |
| US7425083B2 (en) * | 2005-05-02 | 2008-09-16 | Samsung Electro-Mechanics Co., Ltd. | Light emitting device package |
| JP4765563B2 (en) * | 2005-11-07 | 2011-09-07 | セイコーエプソン株式会社 | Optical module |
| JP5261578B2 (en) * | 2009-11-27 | 2013-08-14 | 京セラ株式会社 | Light emitting device |
-
1983
- 1983-05-11 JP JP1983069981U patent/JPS59176166U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59176166U (en) | 1984-11-24 |
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