JPH01251643A - Electrode forming method for semiconductor device - Google Patents

Electrode forming method for semiconductor device

Info

Publication number
JPH01251643A
JPH01251643A JP63076086A JP7608688A JPH01251643A JP H01251643 A JPH01251643 A JP H01251643A JP 63076086 A JP63076086 A JP 63076086A JP 7608688 A JP7608688 A JP 7608688A JP H01251643 A JPH01251643 A JP H01251643A
Authority
JP
Japan
Prior art keywords
electrode
bump
paste
formed
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63076086A
Inventor
Masayuki Ouchi
Masayuki Saito
Hiroshi Yamada
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP63076086A priority Critical patent/JPH01251643A/en
Publication of JPH01251643A publication Critical patent/JPH01251643A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

PURPOSE: To make metal diffusion generate in electrode metal and metal in paste, and form a bump of close contact, by performing baking or drying of a bump electrode in a reducing atmosphere, in a forming method of the bump electrode on an electrode, which bump electrode is formed on at least a first electrode by using conducting paste.
CONSTITUTION: On a silicon wafer 11, a bump is formed by using a screen printing machine. Printing is executed in the manner in which paste 23 is made to flow through the opening of a screen mask 21 by using squeegee 22. After that, hydrogen is made to flow into a reducing furnace, while the wafer subjected to screen printing is heated at a temperature range of 100W600°C. Thereby, the paste bump printed on an Al electrode and an oxide film on an Al electrode interface are reduced and eliminated, and a paste bump 15 is formed on the pure Al surface.
COPYRIGHT: (C)1989,JPO&Japio
JP63076086A 1988-03-31 1988-03-31 Electrode forming method for semiconductor device Pending JPH01251643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63076086A JPH01251643A (en) 1988-03-31 1988-03-31 Electrode forming method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63076086A JPH01251643A (en) 1988-03-31 1988-03-31 Electrode forming method for semiconductor device

Publications (1)

Publication Number Publication Date
JPH01251643A true JPH01251643A (en) 1989-10-06

Family

ID=13595016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63076086A Pending JPH01251643A (en) 1988-03-31 1988-03-31 Electrode forming method for semiconductor device

Country Status (1)

Country Link
JP (1) JPH01251643A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196371A (en) * 1989-12-18 1993-03-23 Epoxy Technology, Inc. Flip chip bonding method using electrically conductive polymer bumps
US5879761A (en) * 1989-12-18 1999-03-09 Polymer Flip Chip Corporation Method for forming electrically conductive polymer interconnects on electrical substrates

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196371A (en) * 1989-12-18 1993-03-23 Epoxy Technology, Inc. Flip chip bonding method using electrically conductive polymer bumps
US5879761A (en) * 1989-12-18 1999-03-09 Polymer Flip Chip Corporation Method for forming electrically conductive polymer interconnects on electrical substrates
US5918364A (en) * 1989-12-18 1999-07-06 Polymer Flip Chip Corporation Method of forming electrically conductive polymer interconnects on electrical substrates
US6138348A (en) * 1989-12-18 2000-10-31 Polymer Flip Chip Corporation Method of forming electrically conductive polymer interconnects on electrical substrates

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