JPH01225164A - Manufacture of insulated gate mosfet - Google Patents

Manufacture of insulated gate mosfet

Info

Publication number
JPH01225164A
JPH01225164A JP63050513A JP5051388A JPH01225164A JP H01225164 A JPH01225164 A JP H01225164A JP 63050513 A JP63050513 A JP 63050513A JP 5051388 A JP5051388 A JP 5051388A JP H01225164 A JPH01225164 A JP H01225164A
Authority
JP
Japan
Prior art keywords
layer
mask
window
forming
type source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63050513A
Inventor
Yasukazu Seki
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP63050513A priority Critical patent/JPH01225164A/en
Publication of JPH01225164A publication Critical patent/JPH01225164A/en
Application status is Granted legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095Body region, i.e. base region, of DMOS transistors or IGBTs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66325Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333Vertical insulated gate bipolar transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712Vertical DMOS transistors, i.e. VDMOS transistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/126Power FETs

Abstract

PURPOSE: To reduce the number of manufacturing steps, and to improve the forming positional accuracy of a semiconductor layer by forming an N+ type source layer in a self-alignment without using a photomask.
CONSTITUTION: In the case of forming an N+ type source layer 5, a window is opened by selectively etching except a polysilicon layer 7a at its center on a polysilicon layer 7 to become a gate without using a mask, an impurity is ion implanted with the layer 7 having the window as a mask to first form a P-type base layer 3, an impurity is again ion implanted from the window to form the N+ type source layer 5. Since the layer 5 is formed in a self- alignment without using a mask, processing accuracy is improved, and its manu facturing efficiency can be additionally enhanced.
COPYRIGHT: (C)1989,JPO&Japio
JP63050513A 1988-03-03 1988-03-03 Manufacture of insulated gate mosfet Granted JPH01225164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63050513A JPH01225164A (en) 1988-03-03 1988-03-03 Manufacture of insulated gate mosfet

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63050513A JPH01225164A (en) 1988-03-03 1988-03-03 Manufacture of insulated gate mosfet
US07/316,474 US4914047A (en) 1987-03-03 1989-02-27 Method of producing insulated gate MOSFET employing polysilicon mask
KR8902651A KR930000605B1 (en) 1988-03-03 1989-03-03 Manufacturing method of insulated gate mosfet

Publications (1)

Publication Number Publication Date
JPH01225164A true JPH01225164A (en) 1989-09-08

Family

ID=12861053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63050513A Granted JPH01225164A (en) 1988-03-03 1988-03-03 Manufacture of insulated gate mosfet

Country Status (3)

Country Link
US (1) US4914047A (en)
JP (1) JPH01225164A (en)
KR (1) KR930000605B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9129819B2 (en) 2011-08-05 2015-09-08 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5118638A (en) * 1988-03-18 1992-06-02 Fuji Electric Co., Ltd. Method for manufacturing MOS type semiconductor devices
JPH0247874A (en) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Manufacture of mos semiconductor device
US5272098A (en) * 1990-11-21 1993-12-21 Texas Instruments Incorporated Vertical and lateral insulated-gate, field-effect transistors, systems and methods
US5187117A (en) * 1991-03-04 1993-02-16 Ixys Corporation Single diffusion process for fabricating semiconductor devices
JPH05218436A (en) * 1992-02-03 1993-08-27 Nec Corp P channel vertical mos field-effect transistor
US5268586A (en) * 1992-02-25 1993-12-07 North American Philips Corporation Vertical power MOS device with increased ruggedness and method of fabrication
US5242841A (en) * 1992-03-25 1993-09-07 Texas Instruments Incorporated Method of making LDMOS transistor with self-aligned source/backgate and photo-aligned gate
US5346835A (en) * 1992-07-06 1994-09-13 Texas Instruments Incorporated Triple diffused lateral resurf insulated gate field effect transistor compatible with process and method
JPH06342914A (en) * 1993-06-01 1994-12-13 Nec Corp Manufacture of semiconductor device
US5739061A (en) * 1993-10-26 1998-04-14 Fuji Electric Co., Ltd. Method of manufacturing a semiconductor device using gate side wall as mask for self-alignment
JP2581453B2 (en) * 1994-05-26 1997-02-12 日本電気株式会社 The semiconductor memory device and manufacturing method thereof
US5670810A (en) * 1994-08-25 1997-09-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device with a vertical field effect transistor
US5585294A (en) * 1994-10-14 1996-12-17 Texas Instruments Incorporated Method of fabricating lateral double diffused MOS (LDMOS) transistors
JPH10125906A (en) * 1996-10-18 1998-05-15 Rohm Co Ltd Semiconductor device and manufacture thereof
US5911104A (en) * 1998-02-20 1999-06-08 Texas Instruments Incorporated Integrated circuit combining high frequency bipolar and high power CMOS transistors
US6773997B2 (en) * 2001-07-31 2004-08-10 Semiconductor Components Industries, L.L.C. Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability
EP3176812A1 (en) * 2015-12-02 2017-06-07 ABB Schweiz AG Semiconductor device and method for manufacturing such a semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213168A (en) * 1983-05-19 1984-12-03 Nec Corp Manufacture of vertical type field effect transistor
JPS60196974A (en) * 1984-03-19 1985-10-05 Toshiba Corp Conduction modulation type mosfet

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4443931A (en) * 1982-06-28 1984-04-24 General Electric Company Method of fabricating a semiconductor device with a base region having a deep portion
JPS593973A (en) * 1982-06-29 1984-01-10 Fujitsu Ltd Manufacture of mos field effect transistor
DE3688057T2 (en) * 1986-01-10 1993-10-07 Gen Electric Semiconductor device and method of manufacture.
IT1204243B (en) * 1986-03-06 1989-03-01 Sgs Microelettronica Spa self-aligned process for the manufacture of DMOS cells of small size and MOS devices obtained by said process
JPS62266871A (en) * 1986-05-15 1987-11-19 Fuji Electric Co Ltd Vertical mosfet

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213168A (en) * 1983-05-19 1984-12-03 Nec Corp Manufacture of vertical type field effect transistor
JPS60196974A (en) * 1984-03-19 1985-10-05 Toshiba Corp Conduction modulation type mosfet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9129819B2 (en) 2011-08-05 2015-09-08 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
US4914047A (en) 1990-04-03
KR930000605B1 (en) 1993-01-25

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