JPH01222436A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH01222436A
JPH01222436A JP4799488A JP4799488A JPH01222436A JP H01222436 A JPH01222436 A JP H01222436A JP 4799488 A JP4799488 A JP 4799488A JP 4799488 A JP4799488 A JP 4799488A JP H01222436 A JPH01222436 A JP H01222436A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
part
trench
surface
formed
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4799488A
Inventor
Seiichi Iwamatsu
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To cope with the increase in current level on a junction part and to decrease the junction resistance by a method wherein a trench is formed in a conductor substrate below a contact hole by a dry etching process and then a semiconductor film is epitaxially deposited to be buried in the trench including both sides thereof.
CONSTITUTION: An insulating film 2 is formed on the surface of a semiconductor substrate 1 to make a contact hole in the film 2, a trench (groove) is formed from the surface of the semiconductor substrate 1 on the bottom of the contact hole by dry etching process and then a single crystal semiconductor film is formed burying the trench part and the contact hole part 3 by selective epitaxial deposition so as to make the surface of the buried epitaxial film flush with the surface of the insulating film 2. Through these procedures, the step disconnection in the contact part 3 of later Al wiring, etc., can be prevented from occurring enabling the junction area of the trench epitaxial contact part 3 to be expanded so that the junction part may be supplied with large current and the junction resistance may be lowered.
COPYRIGHT: (C)1989,JPO&Japio
JP4799488A 1988-03-01 1988-03-01 Manufacture of semiconductor device Pending JPH01222436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4799488A JPH01222436A (en) 1988-03-01 1988-03-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4799488A JPH01222436A (en) 1988-03-01 1988-03-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH01222436A true true JPH01222436A (en) 1989-09-05

Family

ID=12790872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4799488A Pending JPH01222436A (en) 1988-03-01 1988-03-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH01222436A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7063751B2 (en) 2000-06-05 2006-06-20 Denso Corporation Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners
JP2011009595A (en) * 2009-06-29 2011-01-13 Renesas Electronics Corp Semiconductor device and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7063751B2 (en) 2000-06-05 2006-06-20 Denso Corporation Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners
JP2011009595A (en) * 2009-06-29 2011-01-13 Renesas Electronics Corp Semiconductor device and method of manufacturing the same

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