JPH01213890A - Memory device - Google Patents

Memory device

Info

Publication number
JPH01213890A
JPH01213890A JP3790888A JP3790888A JPH01213890A JP H01213890 A JPH01213890 A JP H01213890A JP 3790888 A JP3790888 A JP 3790888A JP 3790888 A JP3790888 A JP 3790888A JP H01213890 A JPH01213890 A JP H01213890A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
memory cell
batch writing
circuit
w3
groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3790888A
Inventor
Fumio Miyaji
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To cause the number of batch writing circuits to be one and to reduce the chip size of a memory device by dividing a memory cell array into plural memory cell array groups and sending a batch writing signal from one common batch writing circuit to the respective memory cell array groups with dislocating a timing.
CONSTITUTION: A memory cell array 3 of the memory device equipped with flash clear function is divided into plural memory cell groups 31W3n and a batch writing circuit 2 is connected to respective memory cell groups 31W3n. Then, an activating signal is inputted from an activating circuit 1 to the batch writing circuit 2. Batch writing signals FC1WFCn to be sent from the batch writing circuit 2, which is operated by the activating signal from this activating circuit 1, to the respective memory cell groups 31W3n, are supplied with dislocating the timing. One common batch writing circuit 2 is used for the plural memory cell groups 31W3n and the chip size of the memory device is reduced.
COPYRIGHT: (C)1989,JPO&Japio
JP3790888A 1988-02-20 1988-02-20 Memory device Pending JPH01213890A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3790888A JPH01213890A (en) 1988-02-20 1988-02-20 Memory device

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP3790888A JPH01213890A (en) 1988-02-20 1988-02-20 Memory device
US07312865 US5054000A (en) 1988-02-19 1989-02-17 Static random access memory device having a high speed read-out and flash-clear functions
DE1989627552 DE68927552D1 (en) 1988-02-19 1989-02-20 storage devices
DE1989627552 DE68927552T2 (en) 1988-02-19 1989-02-20 storage devices
EP19890301639 EP0331322A3 (en) 1988-02-19 1989-02-20 Memory devices
EP19930202350 EP0574094B1 (en) 1988-02-19 1989-02-20 Memory devices
US07636578 US5047985A (en) 1988-02-19 1991-01-02 Static random access memory device having a high speed read-out and precharging arrangement

Publications (1)

Publication Number Publication Date
JPH01213890A true true JPH01213890A (en) 1989-08-28

Family

ID=12510643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3790888A Pending JPH01213890A (en) 1988-02-20 1988-02-20 Memory device

Country Status (1)

Country Link
JP (1) JPH01213890A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03120694A (en) * 1989-10-04 1991-05-22 Nec Ic Microcomput Syst Ltd Semiconductor memory
JP2016514323A (en) * 2013-03-28 2016-05-19 インテル・コーポレーション Automatic interruption operation and auto-restart operation for multi-die nand memory Memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914195A (en) * 1982-07-13 1984-01-25 Nec Corp Semiconductor device
JPS6473599A (en) * 1987-09-14 1989-03-17 Mitsubishi Electric Corp Storage device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914195A (en) * 1982-07-13 1984-01-25 Nec Corp Semiconductor device
JPS6473599A (en) * 1987-09-14 1989-03-17 Mitsubishi Electric Corp Storage device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03120694A (en) * 1989-10-04 1991-05-22 Nec Ic Microcomput Syst Ltd Semiconductor memory
JP2016514323A (en) * 2013-03-28 2016-05-19 インテル・コーポレーション Automatic interruption operation and auto-restart operation for multi-die nand memory Memory device

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