JPH01204305A - Dielectric ceramic composition - Google Patents
Dielectric ceramic compositionInfo
- Publication number
- JPH01204305A JPH01204305A JP63027150A JP2715088A JPH01204305A JP H01204305 A JPH01204305 A JP H01204305A JP 63027150 A JP63027150 A JP 63027150A JP 2715088 A JP2715088 A JP 2715088A JP H01204305 A JPH01204305 A JP H01204305A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric ceramic
- weight
- ceramic composition
- zno
- nb2o5
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 12
- 239000000203 mixture Substances 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 5
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052808 lithium carbonate Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 9
- 238000010304 firing Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002241 glass-ceramic Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 244000062175 Fittonia argyroneura Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は誘導体磁器組成物に係り、特に低温で焼結でき
、信頼性の高い積層基板用材料として好適な誘電体磁器
組成物に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a dielectric ceramic composition, and particularly to a dielectric ceramic composition that can be sintered at low temperatures and is suitable as a highly reliable material for laminated substrates.
（従来の技術）
最近、ハイブリットＩＣ基板の分野においては、小形化
のため、あるいは低廉化のため、回路の実装密度が高め
られる多層描造の基板が使用されている。この基板材料
としては従来からアルミナ系又はガラスセラミック系の
誘電体磁器組成物が用いられていた１、このうちアルミ
ナ系のものは、アルミナ９２〜９７重量％と残部がＣａ
０−Ｈｇ０−８１０２等からなる混合粉末に有機バイン
ダー、溶剤等を加えて泥漿（スラリー）とし、これをド
クターブレード法等によってセラミックグリーンシート
を形成し、この上にタングステン等の導体ペーストで所
望の回路導体パターンを形成し、次いでシートを積み重
ねて熱圧着し、これを加湿水素ガス雰囲気中において１
６００°へ・１７００℃の高温で焼成して製造される。(Prior Art) Recently, in the field of hybrid IC boards, multi-layered boards have been used to increase the density of circuit packaging in order to reduce the size or cost. Alumina-based or glass-ceramic dielectric ceramic compositions have traditionally been used as substrate materials.1 Of these, alumina-based materials consist of 92 to 97% by weight alumina and the remainder Ca.
Add an organic binder, a solvent, etc. to a mixed powder consisting of 0-Hg0-8102, etc. to make a slurry, form a ceramic green sheet using a doctor blade method, etc., and coat it with a conductive paste such as tungsten on top of the desired slurry. A circuit conductor pattern is formed, then the sheets are stacked and bonded under heat, and this is heated for 1 hour in a humidified hydrogen gas atmosphere.
Manufactured by firing at high temperatures of 600° and 1700°C.
又、ガラスセラミック系の多層基板は、ホウケイ酸鉛ガ
ラスとアルミナ等の金属酸化物との混合粉末に有機バイ
ンダー、溶剤等を加えて泥漿とし、前記と同様の方法で
グリーンシートを形成し、この上にＡ（１、又はＡ（］
／ Ｐｄ等の導体ペーストで回路導体パターンを形成し
、次いでシートを積み重ねて熱圧着し、これを大気中に
て９００°〜１０００℃で焼成して製造される。In addition, a glass-ceramic multilayer substrate is produced by adding an organic binder, a solvent, etc. to a mixed powder of lead borosilicate glass and a metal oxide such as alumina to form a slurry, and forming a green sheet using the same method as described above. Above A(1 or A(]
/ It is manufactured by forming a circuit conductor pattern with a conductor paste such as Pd, then stacking the sheets and bonding them by thermocompression, and firing this in the atmosphere at 900° to 1000°C.
（発明が解決しようとする問題点）
アルミナ系の誘電体磁器組成物では１６００’〜１７０
０℃という高い焼成温度を必要とし、そのため製造設備
や諸経費が高くなり、また回路導体用のペーストにも高
温焼成に耐え得るものを使用する必要があり、このよう
なペーストは一般には比抵抗が高いので高周波回路に使
用すると電気特性が劣化するという問題があった。(Problems to be solved by the invention) In the case of alumina-based dielectric ceramic compositions, 1600' to 170'
A high firing temperature of 0°C is required, which increases manufacturing equipment and overhead costs.Also, it is necessary to use a paste for circuit conductors that can withstand high temperature firing, and such pastes generally have a low resistivity. Since it has a high value, there is a problem in that its electrical characteristics deteriorate when used in high-frequency circuits.
一方、ガラスセラミックス系の誘電体磁器組成物では焼
成温度は低くて済むという利点があるが材料中には当然
のこととしてガラス成分が多量に含まれているため、焼
成時に発泡によるピンホールが発生し易く、また回路導
体にＡ（ｌを含むものを使用するとＡｇ成分がガラスへ
移行して基板の絶縁を劣化してしまうとしう問題を解決
する必要があった。On the other hand, glass-ceramic dielectric porcelain compositions have the advantage of requiring a low firing temperature, but since the material naturally contains a large amount of glass, pinholes occur due to foaming during firing. It was necessary to solve the problem that if a circuit conductor containing A(l) was used, the Ag component would migrate to the glass and deteriorate the insulation of the substrate.
（問題点を解決するための手段）
本発明は上記問題を解決するためＨｇＯが１６．２乃至
３２．４重量％、Ｎｂ２αか４８．２乃至６４．８ 重
量％、ｌｎＯが５乃￥１８重量％、Ｂ！２０３が１．２
５乃至７．５重量％、Ｌｉ２ ＣＯ３が１．２５重量％
乃至７．５重量％の範囲で総重力を１００％として誘電
体磁器組成物とした。。(Means for Solving the Problems) In order to solve the above problems, the present invention contains 16.2 to 32.4% by weight of HgO, 48.2 to 64.8% by weight of Nb2α, and 5 to 18% by weight of InO. %, B! 203 is 1.2
5 to 7.5% by weight, Li2 CO3 1.25% by weight
A dielectric ceramic composition was obtained by setting the total gravity to 100% in the range of 7.5% by weight. .
（作用）
上記の本発明の誘電体磁器組成物は１０００℃以下の温
度で焼成でき、したがって特に多層基板を製造する場合
に回路導体用ペーストに銀糸のものを使用することがで
き、しかも焼成時に銀の移行が発生することがない。(Function) The above-mentioned dielectric ceramic composition of the present invention can be fired at a temperature of 1000°C or less, and therefore, especially when producing a multilayer board, silver thread can be used as a circuit conductor paste. No silver migration occurs.
（実施例）
酸化マグネシウム（Ｈｏｅ）、酸化ニオブ（Ｎｂ２０ｓ
）酸化耶鉛（ｌｎＯ）、酸化ビスマス（Ｂｉ２Ｑ３）、
炭酸リチウム（Ｌｉ２ＣＯ３）を出願原料としてこれを
第１表に示す１７通りの配合比に秤量した後ボールミル
で湿式混合してこれを乾燥し、次いで８００゜乃至９０
０℃で仮焼を行なった。その後再び仮焼物をボールミル
で湿式粉砕して中間生成物粉体とし、これを乾燥した後
有機バインダー溶剤等を加えてスラリーとした。(Example) Magnesium oxide (Hoe), niobium oxide (Nb20s
) Lead oxide (lnO), bismuth oxide (Bi2Q3),
Lithium carbonate (Li2CO3) was used as an application raw material and weighed into 17 compounding ratios shown in Table 1, wet mixed in a ball mill, dried, and then mixed at 800° to 90°.
Calcining was performed at 0°C. Thereafter, the calcined product was wet-milled again using a ball mill to obtain an intermediate powder, which was dried and then an organic binder solvent and the like were added to form a slurry.
このスラリーを用いて、従来例と同様にドクターブレー
ド法によりセラミックグリーンシートを形成し、この上
にＡｇ／Ｐｄを含む導体ペーストでスクリーン印刷によ
って所望の回路導体パターンを形成しこれを１０枚重ね
合わせて熱圧着し、大気中で９５０℃の温度で焼成して
第１図に示すような多層基板を作成した。このときの回
路導体パターンの面積は４−でありこれを−層おきに接
続して積層コンデンリを形成して２つの電極１．２間で
絶縁抵抗Ｉ−Ｒを測定した。なお第１表には比誘電率ε
、及び誘電正接ｔａｎδの測定値も示した。Using this slurry, form a ceramic green sheet by the doctor blade method as in the conventional example, form a desired circuit conductor pattern on this by screen printing with a conductor paste containing Ag/Pd, and stack 10 sheets of this. The multilayer substrate was bonded by thermocompression and fired in the atmosphere at a temperature of 950° C. to produce a multilayer substrate as shown in FIG. The area of the circuit conductor pattern at this time was 4-, which was connected every other layer to form a laminated condenser, and the insulation resistance IR was measured between the two electrodes 1.2. Table 1 shows the relative dielectric constant ε
, and measured values of dielectric loss tangent tan δ are also shown.
表 １
第１表において＊印のついた試ＦＡＮα１．３，７゜８
．１１，１３．１５及び１７は本発明の範囲から除かれ
るものであり、ｔａｎδが５０Ｘ１０−４よりも大きく
なっているか、又は絶縁抵抗Ｉ−Ｒが１００ＧΩ（ギカ
オーム）よりも小さくなっており、多層基板として望ま
しくない値になっている。Table 1 Tests marked with * in Table 1 FAN α1.3, 7°8
．． Nos. 11, 13, 15 and 17 are excluded from the scope of the present invention, and have a tan δ larger than 50X10-4 or an insulation resistance I-R smaller than 100 GΩ (gica ohm), and are multilayered. This is an undesirable value for a substrate.
本発明の組成物はガラスを含まないため発泡によるピン
ホールや基板内への銀の移行がなく、したがって ｔａ
ｎδの悪化や絶縁抵抗の劣化が少なくなっている。Since the composition of the present invention does not contain glass, there are no pinholes caused by foaming or migration of silver into the substrate, and therefore ta
Deterioration of nδ and insulation resistance are reduced.
（効果）
以上のように本発明によれば多層基板を構成した場合に
おいて、１０００℃以下という低温で焼成でき、しかも
銀系の導体ペーストを使用できるので安価な製造設備を
使用でき、また製品の信頼性が向上するので歩留が上げ
られ、低廉なセラミック部品が得られる。(Effects) As described above, when a multilayer board is constructed according to the present invention, it can be fired at a low temperature of 1000°C or less, and silver-based conductive paste can be used, so inexpensive manufacturing equipment can be used, and the product can be improved. Since reliability is improved, yields can be increased and inexpensive ceramic parts can be obtained.
第１図は本発明を実施した多層基板の断面図を示す。 １．２・・・電極。 FIG. 1 shows a cross-sectional view of a multilayer substrate embodying the present invention. 1.2... Electrode.
Claims (1)
が４８．２乃至６４．８重量％ＺｎＯが５乃至１８重量
％、Ｓｉ＿２Ｏ＿３が１．２５乃至７．５重量％、Ｌｉ
＿２ＣＯ＿３が１．２５乃至７．５重量％の範囲で総重
量を１００％としたことを特徴とする誘電体磁器組成物
。HgO is 16.2 to 32.4% by weight, Nb_2O_5
is 48.2 to 64.8% by weight, ZnO is 5 to 18% by weight, Si_2O_3 is 1.25 to 7.5% by weight, Li
A dielectric ceramic composition characterized in that _2CO_3 is in the range of 1.25 to 7.5% by weight, with the total weight being 100%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63027150A JPH01204305A (en) | 1988-02-08 | 1988-02-08 | Dielectric ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63027150A JPH01204305A (en) | 1988-02-08 | 1988-02-08 | Dielectric ceramic composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01204305A true JPH01204305A (en) | 1989-08-16 |
Family
ID=12213019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63027150A Pending JPH01204305A (en) | 1988-02-08 | 1988-02-08 | Dielectric ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01204305A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0585820A (en) * | 1991-10-01 | 1993-04-06 | Murata Mfg Co Ltd | Dielectric ceramic composition |
| USRE37385E1 (en) | 1985-09-30 | 2001-09-18 | Kabushiki Kaisha Toyoto Chuo Kenkyusho | Composite material and process for manufacturing same |
-
1988
- 1988-02-08 JP JP63027150A patent/JPH01204305A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE37385E1 (en) | 1985-09-30 | 2001-09-18 | Kabushiki Kaisha Toyoto Chuo Kenkyusho | Composite material and process for manufacturing same |
| JPH0585820A (en) * | 1991-10-01 | 1993-04-06 | Murata Mfg Co Ltd | Dielectric ceramic composition |
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