JPH01198076K1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH01198076K1
JPH01198076K1 JP2325288A JP2325288A JPH01198076K1 JP H01198076 K1 JPH01198076 K1 JP H01198076K1 JP 2325288 A JP2325288 A JP 2325288A JP 2325288 A JP2325288 A JP 2325288A JP H01198076 K1 JPH01198076 K1 JP H01198076K1
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2325288A
Other versions
JPH01198076A (en
Inventor
Hajime Akiyama
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63023252A priority Critical patent/JPH01198076A/en
Publication of JPH01198076A publication Critical patent/JPH01198076A/en
Publication of JPH01198076K1 publication Critical patent/JPH01198076K1/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095Body region, i.e. base region, of DMOS transistors or IGBTs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66325Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333Vertical insulated gate bipolar transistors
    • H01L29/66348Vertical insulated gate bipolar transistors with a recessed gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395Vertical transistors, e.g. vertical IGBT
    • H01L29/7396Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
JP63023252A 1988-02-02 1988-02-02 Semiconductor device Pending JPH01198076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63023252A JPH01198076A (en) 1988-02-02 1988-02-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63023252A JPH01198076A (en) 1988-02-02 1988-02-02 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH01198076A JPH01198076A (en) 1989-08-09
JPH01198076K1 true JPH01198076K1 (en) 1989-08-09

Family

ID=12105408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63023252A Pending JPH01198076A (en) 1988-02-02 1988-02-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH01198076A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5283201A (en) * 1988-05-17 1994-02-01 Advanced Power Technology, Inc. High density power device fabrication process
EP0527600B1 (en) * 1991-08-08 2003-06-25 Kabushiki Kaisha Toshiba Insulated trench gate bipolar transistor
US5316959A (en) * 1992-08-12 1994-05-31 Siliconix, Incorporated Trenched DMOS transistor fabrication using six masks
GB2272572B (en) * 1992-11-09 1996-07-10 Fuji Electric Co Ltd Insulated-gate bipolar transistor and process of producing the same
DE4300806C1 (en) * 1993-01-14 1993-12-23 Siemens Ag Vertical MOS transistor prodn. - with reduced trench spacing, without parasitic bipolar effects
JPH07235672A (en) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp Insulated-gate type semiconductor device and manufacture thereof
EP0698919B1 (en) * 1994-08-15 2002-01-16 Siliconix Incorporated Trenched DMOS transistor fabrication using seven masks
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
JP3325736B2 (en) * 1995-02-09 2002-09-17 三菱電機株式会社 An insulated gate semiconductor device
JP3384198B2 (en) * 1995-07-21 2003-03-10 三菱電機株式会社 An insulated gate semiconductor device and a manufacturing method thereof
JP3410286B2 (en) * 1996-04-01 2003-05-26 三菱電機株式会社 An insulated gate semiconductor device
JPH10335649A (en) * 1997-05-27 1998-12-18 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
DE10009345C1 (en) * 2000-02-28 2001-07-19 Infineon Technologies Ag Field effect transistor device with trench-shaped gate electrode
JP2006140263A (en) * 2004-11-11 2006-06-01 Sanken Electric Co Ltd Semiconductor element and manufacturing method thereof
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
US9882044B2 (en) 2014-08-19 2018-01-30 Vishay-Siliconix Edge termination for super-junction MOSFETs
CN105374859B (en) * 2015-11-10 2018-09-14 株洲南车时代电气股份有限公司 A kind of trench gate igbt chip and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165360A (en) * 1980-05-23 1981-12-18 Matsushita Electronics Corp Manufacture of semiconductor device
EP0047392B1 (en) * 1980-08-25 1986-11-20 Deutsche ITT Industries GmbH High-voltage semiconductor switch
JPS6231167A (en) * 1985-07-30 1987-02-10 Eaton Corp Bidirectional power fet having on state of bipolar

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices

Also Published As

Publication number Publication date
JPH01198076A (en) 1989-08-09

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