JPH01194859A - Fet drive circuit - Google Patents

Fet drive circuit

Info

Publication number
JPH01194859A
JPH01194859A JP1642588A JP1642588A JPH01194859A JP H01194859 A JPH01194859 A JP H01194859A JP 1642588 A JP1642588 A JP 1642588A JP 1642588 A JP1642588 A JP 1642588A JP H01194859 A JPH01194859 A JP H01194859A
Authority
JP
Japan
Prior art keywords
voltage
fet
collector
drive circuit
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1642588A
Other languages
Japanese (ja)
Inventor
Tomiyasu Sagane
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1642588A priority Critical patent/JPH01194859A/en
Publication of JPH01194859A publication Critical patent/JPH01194859A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent a malfunction and to conduct a circuit operation at high frequency by connecting a transistor between FET gate sources for causing an electric current by the turn-OFF voltage of FET to flow.
CONSTITUTION: The drive circuit of FET turns ON FET 1 and its floating capacity is stored with electric charge when the ON-voltage of the FET 1 is applied from a control circuit 3. Then, when a turn-OFF voltage is generated from the control circuit C, its charge flows through the base of a transistor(Tr) 2 and a resistance 3 and vanishes instantaneously by turning ON the Tr 2. In this case, the voltage across G-S of the FET 1 lowers to the saturation voltage across emitter and collector of the Tr 2. Also, the OFF-voltage flows through the resistance 3 by diode characteristics between collector bases of the Tr 2. Thus, the voltage across G-S of the FET 1 is equipotential to the voltage across the emitter and collector of the Tr 2 so as to be substantially zero.
COPYRIGHT: (C)1989,JPO&Japio
JP1642588A 1988-01-27 1988-01-27 Fet drive circuit Pending JPH01194859A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1642588A JPH01194859A (en) 1988-01-27 1988-01-27 Fet drive circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1642588A JPH01194859A (en) 1988-01-27 1988-01-27 Fet drive circuit

Publications (1)

Publication Number Publication Date
JPH01194859A true JPH01194859A (en) 1989-08-04

Family

ID=11915885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1642588A Pending JPH01194859A (en) 1988-01-27 1988-01-27 Fet drive circuit

Country Status (1)

Country Link
JP (1) JPH01194859A (en)

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