JPH01191451A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH01191451A
JPH01191451A JP63014435A JP1443588A JPH01191451A JP H01191451 A JPH01191451 A JP H01191451A JP 63014435 A JP63014435 A JP 63014435A JP 1443588 A JP1443588 A JP 1443588A JP H01191451 A JPH01191451 A JP H01191451A
Authority
JP
Japan
Prior art keywords
film
formed
surface
photoresist
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63014435A
Inventor
Yoshiaki Hanabusa
Takahiko Takahashi
Takayuki Uda
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63014435A priority Critical patent/JPH01191451A/en
Publication of JPH01191451A publication Critical patent/JPH01191451A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1301Shape
    • H01L2224/13012Shape in top view
    • H01L2224/13015Shape in top view comprising protrusions or indentations
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1301Shape
    • H01L2224/13016Shape in side view
    • H01L2224/13018Shape in side view comprising protrusions or indentations
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1302Disposition
    • H01L2224/13022Disposition the bump connector being at least partially embedded in the surface

Abstract

PURPOSE: To improve the connecting reliability of a CCB bump, by providing a configuration so that the inner periphery length of a contact hole becomes long when a ground film is deposited and formed in the contact hole that is opened and formed in the surface protecting film of a semiconductor wafer and the CCB bump is bonded to the surface.
CONSTITUTION: An Si3N4 film 2 is deposited on the surface of a wafer 1. A hole is provided at a specified place by photoresist/etching, and an Al wiring 3 is exposed. Thereafter, a glass protecting film 4 comprising SiO2 is formed. Then, photoresist having a comb-teeth pattern is deposited on the surface of the glass protecting film 4. Wet etching is performed, and a contact hole 5 is formed. Then, a thin ground film 6 comprising chromium/copper/gold and the like is evaporated on the inner periphery of the hole 5. Thereafter, photoresist is deposited on the surface of the wafer 1. The hole 5 is opened by etching, and the ground film 6 is exposed. A solder film 8 comprising tin and lead is formed. The photoresist 7 and the unnecessary solder film 8 are removed. Thereafter, the wafer 1 is put into a reflow furnace for fusing and heating. Thus, a CCB bump 9 is formed.
COPYRIGHT: (C)1989,JPO&Japio
JP63014435A 1988-01-27 1988-01-27 Manufacture of semiconductor device Pending JPH01191451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63014435A JPH01191451A (en) 1988-01-27 1988-01-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63014435A JPH01191451A (en) 1988-01-27 1988-01-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH01191451A true JPH01191451A (en) 1989-08-01

Family

ID=11860938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63014435A Pending JPH01191451A (en) 1988-01-27 1988-01-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH01191451A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576748A (en) * 1990-02-26 1996-11-19 Canon Kabushiki Kaisha Recording head with through-hole wiring connection which is disposed within the liquid chamber
US7355280B2 (en) 2000-09-04 2008-04-08 Seiko Epson Corporation Method for forming a bump, semiconductor device and method of fabricating same, semiconductor chip, circuit board, and electronic instrument
JP2013102013A (en) * 2011-11-08 2013-05-23 Toyota Motor Corp Manufacturing method of semiconductor device and semiconductor device
EP3168872A3 (en) * 2015-11-12 2017-06-07 MediaTek Inc. Semiconductor package assembley

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576748A (en) * 1990-02-26 1996-11-19 Canon Kabushiki Kaisha Recording head with through-hole wiring connection which is disposed within the liquid chamber
US7355280B2 (en) 2000-09-04 2008-04-08 Seiko Epson Corporation Method for forming a bump, semiconductor device and method of fabricating same, semiconductor chip, circuit board, and electronic instrument
US7579692B2 (en) 2000-09-04 2009-08-25 Seiko Epson Corporation Method for forming a bump, semiconductor device and method of fabricating same, semiconductor chip, circuit board, and electronic instrument
JP2013102013A (en) * 2011-11-08 2013-05-23 Toyota Motor Corp Manufacturing method of semiconductor device and semiconductor device
EP3168872A3 (en) * 2015-11-12 2017-06-07 MediaTek Inc. Semiconductor package assembley

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