JPH01184957A - Manufacture of mos transistor - Google Patents

Manufacture of mos transistor

Info

Publication number
JPH01184957A
JPH01184957A JP992188A JP992188A JPH01184957A JP H01184957 A JPH01184957 A JP H01184957A JP 992188 A JP992188 A JP 992188A JP 992188 A JP992188 A JP 992188A JP H01184957 A JPH01184957 A JP H01184957A
Authority
JP
Japan
Prior art keywords
layer
removed
formed
gate electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP992188A
Other versions
JP2560376B2 (en
Inventor
Shunji Nakamura
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP63009921A priority Critical patent/JP2560376B2/en
Publication of JPH01184957A publication Critical patent/JPH01184957A/en
Application granted granted Critical
Publication of JP2560376B2 publication Critical patent/JP2560376B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Abstract

PURPOSE: To make it possible to form stably a transistor of an XMOS structure by a method wherein a substrate with a supporting layer formed thereon is removed by etching to expose a semiconductor layer and a second gate insulating layer and a gate electrode are formed in order at a region to correspond to the gate electrode on the exposed semiconductor layer.
CONSTITUTION: A resist layer 7 is removed and thereafter, a supporting layer 22 consisting of SiO2 is formed on a substrate 10 consisting of an Si wafer. When the substrate 10 is removed, an Epi-SiC semiconductor layer 12 supported by the layer 22 is exposed. After an interlayer insulating layer 24 is formed on this layer 12, the layer 24 at a region to oppose to a gate electrode 16 is selectively removed. Moreover, a heat treatment is conducted in a vaporcontaining atmosphere to form a second gate insulating layer 26 consisting of an SiO2 film on the layer 12 exposing at a part, from which the layer 24 is removed. Then, Al, for example, is deposited on the layers 26 and 24 and a second gate electrode 28 is formed by patterning this deposited Al into a prescribed form.
COPYRIGHT: (C)1989,JPO&Japio
JP63009921A 1988-01-20 1988-01-20 Method of manufacturing a Mos transistor Expired - Lifetime JP2560376B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63009921A JP2560376B2 (en) 1988-01-20 1988-01-20 Method of manufacturing a Mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63009921A JP2560376B2 (en) 1988-01-20 1988-01-20 Method of manufacturing a Mos transistor

Publications (2)

Publication Number Publication Date
JPH01184957A true JPH01184957A (en) 1989-07-24
JP2560376B2 JP2560376B2 (en) 1996-12-04

Family

ID=11733556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63009921A Expired - Lifetime JP2560376B2 (en) 1988-01-20 1988-01-20 Method of manufacturing a Mos transistor

Country Status (1)

Country Link
JP (1) JP2560376B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152332A (en) * 1991-11-07 1993-06-18 Fujitsu Ltd Mos transistor and manufacturing method thereof
JP2002280531A (en) * 2001-03-19 2002-09-27 Denso Corp Semiconductor substrate and its manufacturing method
US7332381B2 (en) 2001-10-30 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7361573B2 (en) 2001-08-10 2008-04-22 Semiconductor Energy Laboratory Co., Ltd. Method of peeling off and method of manufacturing semiconductor device
US9202987B2 (en) 2001-07-16 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US9281403B2 (en) 2001-08-22 2016-03-08 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
WO2017110267A1 (en) * 2015-12-24 2017-06-29 ソニー株式会社 Transistor, semiconductor device, electronic apparatus, and transistor manufacturing method

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152332A (en) * 1991-11-07 1993-06-18 Fujitsu Ltd Mos transistor and manufacturing method thereof
JP2002280531A (en) * 2001-03-19 2002-09-27 Denso Corp Semiconductor substrate and its manufacturing method
US9608004B2 (en) 2001-07-16 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US9202987B2 (en) 2001-07-16 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US7361573B2 (en) 2001-08-10 2008-04-22 Semiconductor Energy Laboratory Co., Ltd. Method of peeling off and method of manufacturing semiconductor device
US9755148B2 (en) 2001-08-22 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
US9281403B2 (en) 2001-08-22 2016-03-08 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
US9842994B2 (en) 2001-08-22 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
US7648862B2 (en) 2001-10-30 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7994506B2 (en) 2001-10-30 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7332381B2 (en) 2001-10-30 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9620408B2 (en) 2001-10-30 2017-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8980700B2 (en) 2001-10-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
WO2017110267A1 (en) * 2015-12-24 2017-06-29 ソニー株式会社 Transistor, semiconductor device, electronic apparatus, and transistor manufacturing method

Also Published As

Publication number Publication date
JP2560376B2 (en) 1996-12-04

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