JPH01183258A - Contact type image sensor - Google Patents

Contact type image sensor

Info

Publication number
JPH01183258A
JPH01183258A JP63007164A JP716488A JPH01183258A JP H01183258 A JPH01183258 A JP H01183258A JP 63007164 A JP63007164 A JP 63007164A JP 716488 A JP716488 A JP 716488A JP H01183258 A JPH01183258 A JP H01183258A
Authority
JP
Japan
Prior art keywords
switches
period
during
pixels
turned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63007164A
Other languages
Japanese (ja)
Inventor
Takashi Kitagawa
喜多川 隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63007164A priority Critical patent/JPH01183258A/en
Publication of JPH01183258A publication Critical patent/JPH01183258A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To remove the influence of inter wiring capacity and earth capacity to be given to a signal current by providing a means to ground the respective picture element of a sensor during the whole or only a part of a period while a read switch is off. CONSTITUTION:A shift register 38 which turns off each of reset switches 34-37 during the period while the read switches 27-30 turn on respectively, and turns on the respective reset switches 34-37 during the whole or a part of the period is provided. Namely, during the period while the respective read switches 27-30 are off, the reset switches 34-37 ground the sensor picture elements 4-15 through terminals 16-19. Accordingly, electric charge is not charged in the earth capacities 23-26, and besides, the inter wiring capacities 20-22 too come to be the earth capacity, and the influence upon the signal current of other sensor picture element is eliminated.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は密着形イメージセンナに関し、特にS/N比を
同上させたマトリックス駆動方式光導電(フォトコンダ
クタ−)型のVI層形イメージセンサに関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a contact type image sensor, and more particularly to a matrix-driven photoconductor type VI layer type image sensor with an improved S/N ratio. .

〔従来の技術〕[Conventional technology]

最近、ファクシミリや0Ca−+に密層形イメージセン
サが多く用いられるようになってきている。
Recently, dense layer image sensors have been increasingly used in facsimiles and 0Ca-+.

密着形イメージセンサにはいくつかの種類がめるが、マ
トリックス駆動方式光導電(フォトコンダクタ−)Mイ
メージセンナはセンサ駆動用のICスイッチが夕なくて
済むので、コスト削減が計れるという点で侵れている。
There are several types of contact type image sensors, but the matrix-driven photoconductive (photoconductor) M image sensor is superior in that it can reduce costs because it eliminates the need for an IC switch to drive the sensor. There is.

第4図は従来のマトリックス駆動方式光導電型イメージ
センサの構成図、第5図はそのタイムチャートである。
FIG. 4 is a block diagram of a conventional matrix-driven photoconductive image sensor, and FIG. 5 is a time chart thereof.

第4図および第5図は説明kW易にするためにセンサー
葉数を12.マトリックス構成を3×4としているが、
実際に用いられる1000画素以上のセンサでも原理は
同じである。
In Figures 4 and 5, the number of sensor leaves is 12. Although the matrix configuration is 3×4,
The principle is the same for sensors with 1000 pixels or more that are actually used.

第4図において端子1〜3にはa1!5図の駆動パルス
41〜43がそれぞれ印加される。また、続出しスイッ
チ27〜30各々はシフトレジスタ31より発供される
パルス44〜47が誦レベルのときタオンし、低レベル
のときオフする。したがってセンナの各画素4〜15谷
々に流れる′電流はそれぞれ期間54〜65に検出回路
32で検出され、出力信号が端子33へ出力される。セ
ンサの谷−素4〜15では入射量に比例して等電54(
抵抗の逆数)が変化するので、入射光量に比例した信号
電流が検出回路32へ流れる。
In FIG. 4, drive pulses 41 to 43 shown in FIG. a1!5 are applied to terminals 1 to 3, respectively. Further, each of the successive output switches 27 to 30 is turned on when the pulses 44 to 47 issued from the shift register 31 are at the recitation level, and turned off when the pulses are at the low level. Therefore, the current flowing through each of the pixels 4 to 15 of the sensor is detected by the detection circuit 32 during periods 54 to 65, respectively, and an output signal is output to the terminal 33. In the valley elements 4 to 15 of the sensor, the isoelectricity 54 (
Since the reciprocal of the resistance changes, a signal current proportional to the amount of incident light flows to the detection circuit 32.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来のマトリックス駆動方式光導電型イメージ
センサでは読出しスイッチ27〜30およびシフトレジ
スタ31の数が多いためtaあるいは数個のICにまと
められることが多く、端子16〜19と読出しスイッチ
27〜30間の配線は10cm以上と比較的長くなシ、
また配線の間隔は05111II以下と小さい、したが
って配線間容量20〜22は比較的大きく、センtの各
両溝4〜15に流れる信号′:It流は互いに干渉さI
Lる。たとえば画素7に7JW、れる信号電流は画素4
および10の信号電流の影響を受ける。
In the conventional matrix-driven photoconductive image sensor described above, there are a large number of readout switches 27 to 30 and shift registers 31, so they are often combined into ta or several ICs, and the terminals 16 to 19 and readout switches 27 to 30 are The wiring between the two is relatively long, over 10 cm.
In addition, the spacing between the wires is as small as 05111II or less, so the capacitances 20 to 22 between the wires are relatively large, and the signals ′:It flowing in each of the grooves 4 to 15 of the center t interfere with each other.
L. For example, the signal current flowing to pixel 7 is 7JW, and the signal current flowing to pixel 4 is
and 10 signal currents.

また、対地容t23〜26も比較的大きく、各画素4〜
15に接続された読出しスイッチ27〜30がオフして
いる期間に対地容、123〜26に光電される電荷&C
よって信号11!流は影響を受ける。
In addition, the ground planes t23 to t26 are also relatively large, and each pixel 4 to
During the period when the readout switches 27 to 30 connected to 15 are off, charges &C are photoelectrically applied to the ground voltage and 123 to 26.
Therefore, signal 11! flow is affected.

たとえば画素7に流れる信号電流は読出しスイッチ28
がオフしている期間に端子1〜3より画素7〜9を通じ
対地容量24に充電された電荷と共に検出回路32で検
出される。
For example, the signal current flowing to the pixel 7 is
is detected by the detection circuit 32 together with the electric charges charged in the ground capacitance 24 from the terminals 1 to 3 through the pixels 7 to 9 during the period when the terminals 1 to 3 are turned off.

以上のように従来のマトリックス駆動方式光導電域イメ
ージセンサにおいては信号電流が配線間容量や対地容量
の影響を受けてS/N比が劣化していたという欠点があ
った。
As described above, the conventional matrix-driven photoconductive area image sensor has the drawback that the signal current is affected by the inter-wiring capacitance and the ground capacitance, resulting in a deterioration of the S/N ratio.

本発明の目的は絖出しスイッチがオフしている期間の全
部又は一部O期間だけセンサの各画素を接地する手段を
設は配線問答tおよび対地容量が信号電訊く与える影響
を除去するようにして上記の欠点を改畳した@st形イ
メージセンサを提供することKある。
The purpose of the present invention is to provide a means for grounding each pixel of the sensor only for all or part of the period when the lead-out switch is off, thereby eliminating the influence of the wiring and ground capacitance on the signal line. Therefore, it is an object of the present invention to provide an @st type image sensor that overcomes the above drawbacks.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の密潰形イメージセンサは、入射光量に応じて抵
抗値が変化するフォトコンダクタ−を直線状に配置した
N X 14個のi&!j木と、前記i索の一端をN個
ごとに接続するN本の配線と、両組画素の順番に従い前
記N本の配線各々に順次デ為−ティ1/Nのパルス電圧
を印加する手段と、前記画素の他の一端をN画素ずつ連
続して接続するM本の配線と、前記1vI不の配線径々
に一端を接続したM個の読出しスイッチと、罰記M個の
読出しスイッチの他端を集束して接続した検出回路と、
前記M本の配線で接続した画素の順番に従って前記M個
の続出しスイッチを前記パルス電圧のパルス幅のN倍の
胡;J’l IX次オンする手段と¥i−有し、A’T
 AF M本の配線およびλ・1個の読出しスイッチの
各結合f5に一端を接続し他端″:!−接地したM1固
のリセットスイッチと、前記Vi個の読出しスイッチ各
々がオンする期間では前記M1内のリセットスイッチ各
々をオフし他の期間の全部又は一部の期間では前記M個
のリセットスイッチ各々をオンする平岐とを具備してい
る。
The compact image sensor of the present invention has N x 14 i&! photoconductors arranged in a straight line whose resistance value changes depending on the amount of incident light. J tree, N wires connecting one end of each N i-string, and means for sequentially applying a pulse voltage of duty 1/N to each of the N wires in accordance with the order of the pixels in both sets. , M wires that successively connect the other end of the pixel to N pixels each, M readout switches whose ends are connected to the 1vI wires, and M readout switches. A detection circuit whose other end is focused and connected,
A'T
AF M wires and one readout switch, one end of which is connected to each coupling f5, and the other end of which is grounded. The reset switch in M1 is turned off and each of the M reset switches is turned on during all or part of other periods.

〔笑肩例〕[Laughter example]

久に、本発明について図面を参照して説明する。 The present invention will now be described with reference to the drawings.

第1図は本発明の第一の実施例の構成図、第2図はその
タイムチャートである。第1!1において端子1〜3.
センサー素4〜15.端子16〜19゜配線問答1i2
0〜22.対地答量23〜26.読出シスイッチ27〜
30.シストレジスタ31゜〜65も第5図と同じであ
る。
FIG. 1 is a block diagram of a first embodiment of the present invention, and FIG. 2 is a time chart thereof. In No. 1!1, terminals 1 to 3.
Sensor element 4-15. Terminal 16~19° Wiring Questions and Answers 1i2
0-22. Amount of ground response 23-26. Read switch 27~
30. The system registers 31° to 65 are also the same as those shown in FIG.

リセットスイッチ34〜37は各々)洗出しスイッチ2
7〜30と並列に設けられ、シフトレジスタ38が生成
する第2図のパルス74〜77が高レベルのときオンし
、低レベルのときオフする。
Reset switches 34 to 37 are respectively) washout switch 2
The pulses 74 to 77 in FIG. 2 generated by the shift register 38 turn on when they are at high level, and turn off when they are at low level.

すなわち、リセットスイッチ34〜37は各々読出しス
イッチ27〜30がオフしている期間に端子16〜19
を通じセンサIIi素4〜15を接地する。したがって
対地容量23〜26には電荷が充電されず、また配心間
容量20〜22も対地容量になり、池のセンナ画素の信
号電流の影響もない。
That is, the reset switches 34 to 37 close the terminals 16 to 19 while the read switches 27 to 30 are off.
The sensor IIi elements 4 to 15 are grounded through the ground. Therefore, the ground capacitors 23 to 26 are not charged with electric charge, and the center capacitors 20 to 22 also serve as ground capacitances, and there is no influence of the signal current of the Senna pixel.

第3図は本発明の第二の実施例のタイムチャートであり
、wt=usIHと同じである。シフトレジスタ38よ
り尭生されるパルス84〜87が高レベルのと趣、すな
わち1尻出しスイッチ27〜30がオンする直前の期間
リセットスイッチ34〜37、がオンし、巡子16〜1
9を通じセンサ画素4〜15を接地する。したがって、
対地蚕蓋23〜26に充電された電荷は胱出しスイッチ
27〜30がオンする直前に放゛也されるので、直号N
L流に影・響を与えることはない。
FIG. 3 is a time chart of the second embodiment of the present invention, which is the same as wt=usIH. When the pulses 84 to 87 generated from the shift register 38 are at a high level, the reset switches 34 to 37 are turned on, and the reset switches 34 to 37 are turned on during the period immediately before the one end output switches 27 to 30 are turned on.
9 to ground the sensor pixels 4 to 15. therefore,
The electric charge charged in the ground cover 23 to 26 is released just before the bladder outlet switches 27 to 30 are turned on, so the direct number N
It will not affect the L style.

し発明の効果〕 以上説明し友ように本発明は、耽出しスイッチがオフし
ている期間の全部又は一部の期間に読出しスイッチと並
列に設けたリセットスイッチに工ってセンサの各画素を
接地すること忙より、配線間容量および対地容量が信号
電流に与える影響を除去できる効果がある。
[Effects of the Invention] As explained above, the present invention resets each pixel of the sensor by using a reset switch provided in parallel with the readout switch during all or part of the period when the exposure switch is off. This has the effect of eliminating the effects of inter-wiring capacitance and ground capacitance on the signal current rather than grounding.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図α本発明の実施例の構成図、第2図および第3図
は七のタイムチャート、爲4図は従来的の構成図、45
凶はそのタイムチャートである。 4〜15・・・・・・センサ画素、20〜22・・・・
・・配線間容量、23〜26・旧・・対庵容量、27〜
3o・・・・・・絖出しスイッチ、32・・・・・・検
出回路、34〜37・・・・・・リセットスイッチ。 代理人 弁理士  内  原    晋芽 l 閏 4ルt5:’iン寸&f xyへJo: nitスイ?F 34−L37:  リゼヅFズイッf 茅 2 訂 茅 3 図 /−17 第 4  図 4〜15:ゼ〉す占素 2θ〜22釈鳶−俸量 23〜26.刑建寿争 27〜3θ:お5i1スイッチ
Figure 1 α is a block diagram of an embodiment of the present invention, Figures 2 and 3 are time charts of 7, Figure 4 is a conventional block diagram, 45
The problem is the time chart. 4 to 15...Sensor pixels, 20 to 22...
・Capacitance between wires, 23~26 ・Old ・Capacity between lines, 27~
3o: wire removal switch, 32: detection circuit, 34-37: reset switch. Agent Patent Attorney Shinme Uchihara l Leap 4 Le t5:'in sun&f xy to Jo: nit sui? F 34-L37: Rizezu F Zwif Kaya 2 Revised Kaya 3 Figure/-17 No. 4 Figures 4 to 15: Ze〉Spell element 2θ to 22 Shakutobi - Salary amount 23 to 26. Penalty and longevity dispute 27~3θ: 5i1 switch

Claims (1)

【特許請求の範囲】[Claims] 入射光量に応じて抵抗値が変化するフォトコンダクター
を直線状に配置したN×M個の画素と、前記画素の一端
をN個ごとに接続するN本の配線と、前記画素の順番に
従い前記N本の配線各々に順次デューティ1/Nのパル
ス電圧を印加する手段と、前記画素の他の一端をN画素
ずつ連続して接続するM本の配線と、前記M本の配線各
々に一端を接続したM個の読出しスイッチと、前記M個
の読出しスイッチの他端を集束して接続した検出回路と
、前記M本の配線で接続した画素の順番に従って前記M
個の読出しスイッチを前記パルス電圧のパルス幅のN倍
の期間順次オンする手段とを有し、前記M本の配線およ
びM個の読出しスイッチの各結合部に一端を接続し他端
を接地したM個のリセットスイッチと、前記M個の読出
しスイッチ各々がオンする期間では前記M個のリセット
スイッチ各々をオフし他の期間の全部又は一部の期間で
は前記M個のリセットスイッチ各々をオンする手段とを
具備したことを特徴とする密着形イメージセンサ。
N×M pixels in which photoconductors whose resistance value changes depending on the amount of incident light are arranged in a straight line; N wirings connecting one end of each N pixel; means for sequentially applying a pulse voltage with a duty of 1/N to each of the wirings; M wirings that successively connect the other ends of the pixels to N pixels each; and one end connected to each of the M wirings. According to the order of the M readout switches, the detection circuit connected to the other ends of the M readout switches, and the pixels connected by the M wires,
means for sequentially turning on the readout switches for a period N times the pulse width of the pulse voltage, one end of which is connected to each coupling portion of the M wires and the M readout switches, and the other end is grounded. Each of the M reset switches is turned off during a period in which each of the M reset switches and the M readout switches are turned on, and each of the M reset switches is turned on during all or part of other periods. A close-contact image sensor characterized by comprising means.
JP63007164A 1988-01-14 1988-01-14 Contact type image sensor Pending JPH01183258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63007164A JPH01183258A (en) 1988-01-14 1988-01-14 Contact type image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63007164A JPH01183258A (en) 1988-01-14 1988-01-14 Contact type image sensor

Publications (1)

Publication Number Publication Date
JPH01183258A true JPH01183258A (en) 1989-07-21

Family

ID=11658437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63007164A Pending JPH01183258A (en) 1988-01-14 1988-01-14 Contact type image sensor

Country Status (1)

Country Link
JP (1) JPH01183258A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5936437A (en) * 1992-03-23 1999-08-10 Matsushita Electric Industrial Co., Ltd. Analog-to-digital converter with capacitor network

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190775A (en) * 1983-04-14 1984-10-29 Ricoh Co Ltd Control system of photoelectric converting element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190775A (en) * 1983-04-14 1984-10-29 Ricoh Co Ltd Control system of photoelectric converting element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5936437A (en) * 1992-03-23 1999-08-10 Matsushita Electric Industrial Co., Ltd. Analog-to-digital converter with capacitor network

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