JPH01156484A - Method and device for cleaning deposited film forming chamber - Google Patents
Method and device for cleaning deposited film forming chamberInfo
- Publication number
- JPH01156484A JPH01156484A JP31509487A JP31509487A JPH01156484A JP H01156484 A JPH01156484 A JP H01156484A JP 31509487 A JP31509487 A JP 31509487A JP 31509487 A JP31509487 A JP 31509487A JP H01156484 A JPH01156484 A JP H01156484A
- Authority
- JP
- Japan
- Prior art keywords
- film forming
- deposited film
- forming chamber
- chamber
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims description 47
- 239000000356 contaminant Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000007790 scraping Methods 0.000 claims description 17
- 238000001312 dry etching Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000007599 discharging Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 108091008695 photoreceptors Proteins 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は堆積膜形成装置における堆積膜形成室の内壁面
に付着した汚染物を除去するクリーニング方法及び装置
に関し、とりわけクリーニング時間の大幅な短縮および
コストの低減化等を可能とする堆積膜形成室のクリーニ
ング方法及び該方法を実施するのに適した装置に関する
。Detailed Description of the Invention [Technical Field to which the Invention Pertains] The present invention relates to a cleaning method and device for removing contaminants adhering to the inner wall surface of a deposited film forming chamber in a deposited film forming apparatus, and in particular to a cleaning method and apparatus for significantly shortening the cleaning time. The present invention also relates to a method for cleaning a deposited film forming chamber that enables cost reduction, and an apparatus suitable for carrying out the method.
従来、電子写真用感光体、光起電力デイバイス、画像入
力用ラインセンサー等の各種エレクトロニクス、光学素
子等に用いられる堆積膜の形成には、熱ＣＶＤ法、プラ
ズマＣＶＤ法、イオンブレーティング法、スパッタリン
グ法等の各種の堆積膜形成方法が用いられ、そのための
各種装置も提案されている。そして、こうした堆積膜形
成においては、堆積膜形成後の堆積膜形成室内には堆積
膜形成の際の副生成物等の汚染物ケ付着しており、これ
らの付着した汚染物は、堆積膜形成工程を繰り返すこと
により剥離しやすくなり、堆積膜形成室内をリーク又は
排気する際に細片又は粉体となって容易に堆積膜形成室
内に舞い上がる。このために、膜を形成するあるいは膜
を形成中の基体表面に付着して基体表面を汚染し、形成
される堆積膜の品質を低下せしめる原因となっていた。Traditionally, thermal CVD, plasma CVD, ion blating, and sputtering have been used to form deposited films used in various electronics and optical elements such as electrophotographic photoreceptors, photovoltaic devices, and line sensors for image input. Various methods for forming deposited films, such as the method, are used, and various apparatuses for the same have also been proposed. In such deposited film formation, contaminants such as by-products during deposited film formation adhere to the deposited film forming chamber after the deposited film is formed. By repeating the process, it becomes easy to peel off, and when the inside of the deposited film forming chamber is leaked or exhausted, it becomes fine pieces or powder and easily flies up into the deposited film forming chamber. For this reason, it adheres to the surface of the substrate on which a film is being formed or is being formed, contaminating the surface of the substrate and causing deterioration in the quality of the deposited film formed.
よって、堆積膜を形成するについては、こうした汚染物
の影響をできる限り減少させるために、堆積膜形成室を
成膜終了時毎に、クリーニングする必要がある。Therefore, when forming a deposited film, it is necessary to clean the deposited film forming chamber every time film formation is completed in order to reduce the influence of such contaminants as much as possible.
こうした堆積膜形成室のクリーニング方法としては、従
来から手作業による分解クリーニング法、又はドライエ
ツチングによるクリーニング法が用いられているほか、
最近では、例えば特開昭６２−１８８８号公報に記載さ
れているガス吹付けによる方法、特開昭６２−１８８９
号公報に記載されている掻き落とし手段を用いる方法な
どが提案されている。Conventionally, manual decomposition cleaning methods or dry etching cleaning methods have been used to clean the deposited film forming chamber.
Recently, for example, a method using gas blowing described in JP-A-62-1888, a method using JP-A-62-1889,
A method using a scraping means described in the above publication has been proposed.
しかしながら、手作業による分解クリーニング方法は、
その都度堆積膜形成室を分解してＮａＯＨ，ＨＦ等によ
る化学エツチングを行うために、長時間を要する上に、
多大の労力を必要とするものである。さらに、エツチン
グ液が残留することがあり、完全なりリーニングは困難
である等の問題点を有していた。たとえば、電子写真感
光体をプラズマＣＶＤ法によって作製する場合、汚染物
が残存していると感光体の特性悪化および画像欠陥の原
因となる。However, manual disassembly cleaning methods
It takes a long time to disassemble the deposited film forming chamber each time and perform chemical etching using NaOH, HF, etc.
This requires a lot of effort. Further, the etching solution may remain, making it difficult to perform a complete cleaning. For example, when an electrophotographic photoreceptor is manufactured by a plasma CVD method, remaining contaminants cause deterioration of the characteristics of the photoreceptor and image defects.
−４、ドライエツチングによるクリーニング方法は、堆
積膜形成室の分解が不要であるために労力が軽減される
が、エツチング用ガスを用い、高周波電力によってプラ
ズマを発生させるために、クリーニングに高いコストを
必要とする。また、それほど短時間にクリーニングが行
えるわけではないうえに、繰り返すうちに堆積膜形成室
内に汚染物が生じる等の問題点を有していた。-4. The dry etching cleaning method requires less labor because it does not require disassembling the deposited film forming chamber, but it requires high cleaning costs because it uses an etching gas and generates plasma using high frequency power. I need. In addition, cleaning cannot be performed in such a short time, and contaminants are generated in the deposited film forming chamber as the process is repeated.
又、前記ガス吹付けによる方法および掻き落としによる
方法にしても、昨今のように製造工程の更なる合理化、
効率化が叫ばれる時代にあっては、処理時間の点で十分
満足のいく方法であるとはいえなくなってきている。In addition, even with the gas spraying method and the scraping method, further rationalization of the manufacturing process as in recent years,
In an era where efficiency is being sought after, this method is no longer fully satisfactory in terms of processing time.
本発明の目的は、各種エレクトロニクス素子、光学素子
等に用いられる素子部材としての堆積膜を形成する装置
において、前述の堆積膜形成室のクリーニング方法にお
ける諸問題を排除し、クリーニング時間を大幅に短縮す
るとともにクリーニングのコストを低減化しうる堆積膜
形成室のクリーニング方法およびその方法を実施しうる
のに適した装置を提供することにある。The purpose of the present invention is to eliminate various problems in the method of cleaning the deposited film forming chamber described above in an apparatus for forming deposited films as element members used in various electronic devices, optical devices, etc., and to significantly shorten the cleaning time. It is an object of the present invention to provide a method for cleaning a deposited film forming chamber that can reduce cleaning costs and an apparatus suitable for carrying out the method.
本発明の他の目的は、堆積膜形成室のクリーニングに要
する処理時間を短縮することにより、堆積膜形成工程の
効率化を可能とする堆積膜形成方法及びそのための装置
を提供することにある。Another object of the present invention is to provide a method for forming a deposited film and an apparatus therefor, which make it possible to improve the efficiency of the deposited film forming process by shortening the processing time required for cleaning the deposited film forming chamber.
本発明は、上述の従来の堆積膜形成装置における堆積膜
形成室のクリーニング方法の諸問題を解決し、上述の目
的を達成すべく鋭意研究を続けた結果完成に至ったもの
であり、その骨子とするところは、堆積膜形成装置にお
ける堆積膜形成室の内壁面に付着した汚染物を除去する
クリーニング方法において、前記堆積膜形成室に振動を
与えて該堆積室の内壁面に付着した汚染物を脱落させる
工程を少なくとも有することを特徴とする堆積膜形成室
のクリーニング方法にある。The present invention was completed as a result of intensive research to solve the problems of the cleaning method of the deposited film forming chamber in the conventional deposited film forming apparatus described above and to achieve the above objectives. In a cleaning method for removing contaminants adhering to the inner wall surface of a deposited film forming chamber in a deposited film forming apparatus, vibration is applied to the deposited film forming chamber to remove contaminants adhering to the inner wall surface of the deposited film forming chamber. A method for cleaning a deposited film forming chamber, comprising at least a step of removing the deposited film forming chamber.
さらにもう１つの本発明は、該方法を達成するのに適し
た装置を提供するものであり、その特徴とする点は、内
部を気密に保持しうる堆積膜形成室と、該堆積膜形成室
内に堆積膜形成用原料ガスを導入する手段と該堆積膜形
成室内に放電エネルギーを導入する手段とを存し、前記
堆積膜形成室内に設置された基体上に堆積膜を形成せし
める装置において、前記堆積膜形成室を振動せしめる手
段を設け、該堆積膜形成室の内壁面に付着した汚染物を
脱落させるようにした点にある。Yet another aspect of the present invention provides an apparatus suitable for achieving the method, and its features include a deposited film forming chamber whose interior can be kept airtight; In the apparatus for forming a deposited film on a substrate installed in the deposited film forming chamber, the device comprises a means for introducing a raw material gas for forming a deposited film into the deposited film forming chamber, and a means for introducing discharge energy into the deposited film forming chamber. The present invention is characterized in that a means for vibrating the deposited film forming chamber is provided to remove contaminants adhering to the inner wall surface of the deposited film forming chamber.
上述の本発明の堆積膜形成室のクリーニング方法におい
ては、前記堆積膜形成室に振動を与えて該堆積室の内壁
面に付着した汚染物を脱落させる工程に加えて、さらに
ドライエツチング工程および／または該堆積膜形成室の
内壁面に付着した汚染物を掻き落とす工程を存すること
が望ましく、そのための装置として、堆積膜形成室を振
動せしめる手段に加えて、さらにドライエツチング手段
および／または堆積膜形成室内壁面に付着した汚染物を
掻き落とす手段を設けた装置であることが望ましい。In the above-described method for cleaning a deposited film forming chamber of the present invention, in addition to the step of applying vibration to the deposited film forming chamber to remove contaminants adhering to the inner wall surface of the deposition chamber, the method further includes a dry etching step and/or a dry etching step. Alternatively, it is desirable to include a step of scraping off contaminants adhering to the inner wall surface of the deposited film forming chamber, and as an apparatus for this purpose, in addition to means for vibrating the deposited film forming chamber, there is also a dry etching means and/or a means for vibrating the deposited film forming chamber. It is desirable that the apparatus be provided with means for scraping off contaminants adhering to the wall surface of the forming chamber.
以下、図面を用いて本発明の方法及び装置について詳し
く説明するが、本発明はこれにより何ら限定されるもの
ではない。Hereinafter, the method and apparatus of the present invention will be explained in detail using the drawings, but the present invention is not limited thereby.
第１図は、本発明の方法及び装置構成の典型的−例を模
式的に示す概略図である。FIG. 1 is a schematic diagram illustrating a typical example of the method and apparatus configuration of the present invention.
第１図において、１は堆積膜形成室を示しており、２は
堆積膜形成室Ｉ内に原料ガスを導入するためのガス導入
管、３は基体４を加熱するためのヒーターである。堆積
膜形成室１の側面は絶縁材７によって底板８と天板１０
とからそれぞれ電気的に分離され、ガスに放電エネルギ
ーを与えるための高周波電源６に接続された高周波電極
５によって囲まれている。高周波電極５には本発明の振
動装置９が接触せしめられている。第１図においては振
動装置９は高周波電極に機械的振動を与えるパイブレー
ク−として示されており、成膜時あるいはエツチング時
のように高周波電極に電圧が印加されているときには、
電極とは接触せず後退しているようにされている。In FIG. 1, 1 is a deposited film forming chamber, 2 is a gas introduction pipe for introducing raw material gas into the deposited film forming chamber I, and 3 is a heater for heating the substrate 4. The side surfaces of the deposited film forming chamber 1 are connected to a bottom plate 8 and a top plate 10 by an insulating material 7.
and are surrounded by a high frequency electrode 5 connected to a high frequency power source 6 for applying discharge energy to the gas. A vibrating device 9 of the present invention is brought into contact with the high frequency electrode 5. In FIG. 1, the vibration device 9 is shown as a pie-break device that applies mechanical vibration to the high-frequency electrode, and when a voltage is applied to the high-frequency electrode such as during film formation or etching,
It is set back and not in contact with the electrode.
振動装置に用いられるバイブレータ−のタイプとしては
通称“ピストンバイブレーク−″“タービンバイブレー
ク−”などと呼ばれる比較的低周波で強い振動力を与え
るもの、きわめて低周波だが、１回の振動力が非常に大
きい“インターバルバイブレータ−″“エアノツカー”
と呼ばれるようなタイプのものなどが、上述のごとき着
脱・移動形式で用いられる。そして、振幅は小さいが周
波数の高い１０−ラーバイプレークー″１ボールバイブ
レータ−３などと呼ばれるものは比較的コンパクトであ
るため、例えば第２図の例のように電極５の要所要所３
こ設Ｗし、固定式で用いることができる。但しこの際も
放電と振動は同時に行われず、放電中はバイブレーク−
の電源コードは外しておくなどの注意が必要である。こ
れらの振動装置は脱落させたい汚染物の質と量、付着の
仕方、適用する反応室の形態などに応じて適宜選択する
。The types of vibrators used in vibrating devices are commonly called "piston vibrakes" and "turbine vibrakes," which give a strong vibrating force at a relatively low frequency. Very large “interval vibrator” “Air Notsker”
A type called ``type'' is used in the above-mentioned detachable/movable format. A device called a 10-ball vibrator 3, which has a small amplitude but a high frequency, is relatively compact, so for example, as shown in the example in FIG.
It can be installed in a fixed manner and used as a fixed type. However, even in this case, discharge and vibration do not occur at the same time, and during discharge there is a vibration break.
Be careful, such as disconnecting the power cord. These vibration devices are appropriately selected depending on the quality and quantity of the contaminants to be removed, the manner of adhesion, the form of the reaction chamber to be applied, etc.
本発明のクリーニング方法の対象としては、支持体上へ
の膜形成を目的とした装置であれば、どのようなものに
も適用され得るが、殊に、例えば気相法を利用したａ−
３ｉ系感光ドラムの膜形成装置のように多量の粉末が副
生されるものなどに対して絶大な効果を発揮する。The cleaning method of the present invention can be applied to any device as long as it is an apparatus for forming a film on a support, but in particular, for example, a-
It is extremely effective in applications where a large amount of powder is produced as a by-product, such as film forming equipment for 3i photosensitive drums.
本発明の振動装置は、堆積膜形成室内壁に設置され、該
堆積膜形成室内壁に付着した汚染物を機械的に掻き落と
す手段を併設することにより、より効率的なりリーニン
グが可能となる。該機械的掻き落とし手段としては、例
えば特開昭６２−１８８９号公報に詳述されているもの
が好ましいものとして用いられ、こうした場合には、機
械的掻き落とし手段では除去しきれない部分、すなわち
機械的掻き取り部材のいきとどきにくい天板、底板など
に付着した汚染物、および機械的掻き取り部材自体への
付着物なども、完全に除去することができる。The vibration device of the present invention is installed on the wall of the deposited film forming chamber, and by providing means for mechanically scraping off contaminants adhering to the wall of the deposited film forming chamber, more efficient leaning can be performed. As the mechanical scraping means, for example, the one described in detail in Japanese Patent Application Laid-Open No. 1889/1989 is preferably used, and in such a case, the parts that cannot be removed by the mechanical scraping means, i.e. Contaminants adhering to the top plate, bottom plate, etc. that are difficult for the mechanical scraping member to reach, as well as adhering substances to the mechanical scraping member itself, can be completely removed.
さらに上述のごとき振動工程を有するいくつかの手段に
加えて、最終仕上げ工程としてドライエツチング工程を
併用することにより、仕上がり状態が完璧となり、より
効果的なりリーニングが可能となる。Furthermore, by using a dry etching process as a final finishing process in addition to the above-mentioned vibrating process, a perfect finished state can be achieved, and more effective leaning can be achieved.
以下、実施例を用いて本発明の方法及び装置について具
体的に説明する。Hereinafter, the method and apparatus of the present invention will be specifically explained using Examples.
実施例１
第１図の堆積膜形成装置を用い、振動装置としてエアノ
ツカーに一３０型パイブレーク−（ネッター社製）を用
い、該振動装置を着脱自在に電極５に接触させうるよう
にした。Example 1 The deposited film forming apparatus shown in FIG. 1 was used, and a 130-type pie break (manufactured by Netter Corporation) was used as an air knocker as a vibration device, so that the vibration device could be detachably brought into contact with the electrode 5.
まず、バイブレータ−が接触していない状態でかつ、円
筒状支持体４ （外径φ１０８、長さ３６０ａｍ、アル
ミ製）を図のように設置した状態の、手拭きで清掃され
た膜形成室内を１ｍｔｏｒｒまで排気した０次にヒータ
ー３をＯＮし支持体表面を２５０℃になるまで加熱し、
引続いてガスバイブ２を通じて５ｉＨｎガス２５０ｓｅ
ｃｍ、 Ｎ。First, with the vibrator not in contact and with the cylindrical support 4 (outer diameter φ108, length 360 am, made of aluminum) installed as shown in the figure, the film forming chamber was heated to 1 mtorr, which had been cleaned with a hand wipe. Next, turn on the heater 3 and heat the surface of the support until it reaches 250°C.
Subsequently, 5iHn gas 250se was applied through gas vibrator 2.
cm, N.
ガス１０ｓｅｃｍ、 ＢｔＨ＆ガスをＨ２ガスで１）０
００ｐｐに希釈した混合ガス２５５ｃｃｖａ（ＢｚＨｂ
／Ｓ １Ｈ４＝１００ｐｐ鋼）を同時に流し、圧力を
０．５ｔｏｒｒに調整した０次に高周波電源（１３，５
６ＭＨｚ）をＯＮＬ放電パワーを３００Ｗに調整し、そ
の状態で３時間放電を行い約２５μｍのａ−３ｉ系の感
光ドラムを作製した。約１時間の自然放冷後感光ドラム
を取り出した際、膜形成室内を観察したところ、電極壁
には厚いところで約８１ぐらいの厚さで茶かっ色のいわ
ゆるポリシランの粉末が付着していた。観察後フタをし
ガス管からＡ「ガスを１０００ｓｅｃｍ流し、排気管１
）を通じて排気しながら振動装置をＯＮした。その状態
で約５分間振動を行った後堆積膜形成室を大気に戻しフ
タをあけ再び室内を観察したところ、底面に排気し残さ
れた粉体の残存物が若干残されていることと、壁面がう
つすら粉体で着色されていることの他は大半の粉体が除
去されていることが確認された。粉体の残存量を定量化
するために、このような状態の堆積膜形成室に別の円筒
状支持体を入れフタをし、成膜時と同様の手続きでＣＦ
４５００ｓｅｃｍｓ Ｏｘ ４０ｓｅｃｍをそれぞれ流
し、圧力０．６ｔｏｏｒ、放電パワー１ｋＷでドライエ
ツチングを行い、その終点時間を検出してみた。尚ドラ
イエツチング中はパイブレーク−は後方に移動させてお
いた。終点検出は特開昭６２−１８８９に開示されてい
る方法と同様にＦラジカルの７０４ｎｍの発光強度の変
化を追うという方法で行った。Gas 10sec, BtH & gas with H2 gas 1) 0
255ccva of mixed gas diluted to 00pp (BzHb
/S 1H4 = 100pp steel) and the pressure was adjusted to 0.5 torr using a zero order high frequency power source (13,5
6 MHz), the ONL discharge power was adjusted to 300 W, and discharge was performed in this state for 3 hours to produce an a-3i photosensitive drum of about 25 μm. When the photosensitive drum was taken out after being allowed to cool naturally for about 1 hour, the inside of the film forming chamber was observed, and it was found that brownish-colored polysilane powder had adhered to the electrode wall to a thickness of about 81 mm at the thickest point. After observation, close the lid, flow gas A for 1000 seconds from the gas pipe, and exhaust pipe 1.
) The vibration device was turned on while exhausting air through the pipe. After vibrating in this state for about 5 minutes, the deposited film forming chamber was returned to the atmosphere, the lid was opened, and the inside of the chamber was observed again. It was confirmed that most of the powder had been removed, except that the wall surface was colored with powder. In order to quantify the remaining amount of powder, another cylindrical support was placed in the deposited film forming chamber in this state, the lid was closed, and CF was applied using the same procedure as during film formation.
Dry etching was performed at a pressure of 0.6 toor and a discharge power of 1 kW by flowing 4500 secs of Ox and 40 sec of each, and the end point time was detected. The pie break was moved to the rear during dry etching. The end point was detected by following the change in the emission intensity of F radicals at 704 nm, similar to the method disclosed in JP-A-62-1889.
結果を第４図ａに示す、約１時間の放電で残存物が完全
に除去されたことがわかる。このことは又、本実験終了
後膜形成室内を肉眼で観察し、残存物がまったく認めら
れなかったことからも裏付けられた。The results are shown in FIG. 4a, and it can be seen that the residual materials were completely removed after approximately 1 hour of discharge. This was also supported by the fact that after the completion of this experiment, the interior of the film formation chamber was visually observed and no residue was observed.
大血炭１
装置構成を第２図のような配置にし、上下２個のパイプ
レーク−にネンター社製ニューマチックローラーバイブ
レータ−（振動数２００ Ｏｒ、ｐ、ｍ振動力３００ｋ
ｇ）を固定式で用いた以外は、実施例１と全く同様の実
験及びドライエツチングによる評価を行った結果を第４
図すに示す。この方法でも十分短時間でクリーニングで
きることが確認された。Large blood charcoal 1 The device configuration was arranged as shown in Figure 2, and Nenter's pneumatic roller vibrator (frequency: 200 Or, p, m vibration force: 300 k) was attached to the upper and lower pipe lakes.
The results of the same experiment and dry etching evaluation as in Example 1, except that g) was used in a fixed manner, are shown in the fourth example.
It is shown in the figure. It was confirmed that this method can also perform cleaning in a sufficiently short time.
去１）１走
第３図のような機械的掻き落とし手段付き振動装置は、
実施例２と同じ形式の装置を用いて実験を行った。1) A vibrating device with mechanical scraping means as shown in Figure 3 for one run,
An experiment was conducted using the same type of apparatus as in Example 2.
実験の手順は、ドラム形成までの手続きは実施例１と同
様に行い、フタを閉じた後実施例１と同様ガス管からＡ
ｒを流し、ポンプで系内を排気しながら機械的掻き落と
し手段と振動装置を同時にＯＮしてクリーニングを行っ
た。すなわち振動装置をＯＮすると同時に駆動部１３に
よって綱目状部材１５を回転させ、電極６の表面に付着
した汚染物を掻き落とした。５分間の上記の処理の後の
ドライエツチングの様子を第４図Ｃに示す。The experimental procedure was the same as in Example 1 up to drum formation, and after closing the lid, A was connected from the gas pipe as in Example 1.
Cleaning was carried out by flowing r and evacuating the system with a pump while turning on the mechanical scraping means and the vibration device at the same time. That is, at the same time as the vibrating device was turned on, the wire-shaped member 15 was rotated by the drive unit 13 to scrape off the contaminants adhering to the surface of the electrode 6. The state of dry etching after the above treatment for 5 minutes is shown in FIG. 4C.
ル較透土２１
実施例３において振動子をｏｆｆの状態で機械的掻き落
とし手段のみでクリーニングを行い、エツチング時間を
調べたところ第４図ｄのような結果が得られた（比較例
１）。又振動も機械的掻き落としも行わずにエツチング
のみでクリーニングを行った際の結果を第４図ｅに示す
（比較例２）。In Example 3, cleaning was carried out using only mechanical scraping means with the vibrator turned off, and when the etching time was investigated, the results shown in Figure 4d were obtained (Comparative Example 1) . FIG. 4e shows the results when cleaning was performed only by etching without vibration or mechanical scraping (Comparative Example 2).
本発明による堆積膜形成装置のクリーニング方法及びそ
のための装置を用いることにより、弊害を生じることな
く、従来の方式に比ベクリーニング時間を大幅に短縮す
ることができる。By using the method for cleaning a deposited film forming apparatus and the apparatus therefor according to the present invention, the cleaning time can be significantly shortened compared to conventional methods without causing any adverse effects.
又、ドライエツチング工程および／または機械的掻き落
とし工程と併用すると、より一層クリーニング時間を短
縮することができる。Further, when used in combination with a dry etching process and/or a mechanical scraping process, the cleaning time can be further shortened.
第１図、第２図、第３図は本発明による膜形成装置の一
実施例を示す概略図である。第４図はドライエツチング
時間とフン素ラジカルの７０４ｎｍ発光強度との関係を
示すものでエツチングの終点時間を割り出すための図で
ある。
第１〜３図について、１・・・膜形成室、２・・・ガス
導入管、３・・・支持体加熱用ヒーター、４・・・支持
体シリンダー、５・・・高周波電極、６・・・高周波電
源、７・・・絶縁ガイシ、８・・・底板、９・・・振動
手段、１０・・・天板、１）・・・排気管、１２・・・
ギヤ部、１３・・・駆動部、１４・・・リング状部材、
１５・・・網目状部材、１７・・・ガス管から放出され
るガスの流れ、１８・・・発光状態観察用窓。FIG. 1, FIG. 2, and FIG. 3 are schematic diagrams showing an embodiment of a film forming apparatus according to the present invention. FIG. 4 shows the relationship between the dry etching time and the 704 nm emission intensity of fluorine radicals, and is a diagram for determining the end point time of etching. Regarding Figures 1 to 3, 1... Film forming chamber, 2... Gas introduction pipe, 3... Heater for heating the support, 4... Support cylinder, 5... High frequency electrode, 6... ...High frequency power supply, 7...Insulating insulator, 8...Bottom plate, 9...Vibration means, 10...Top plate, 1)...Exhaust pipe, 12...
Gear part, 13... Drive part, 14... Ring-shaped member,
15...Mesh member, 17...Flow of gas released from the gas pipe, 18...Window for observing light emission state.
Claims (7)
付着した汚染物を除去するクリーニング方法において、
前記堆積膜形成室に振動を与えて該堆積室の内壁面に付
着した汚染物を脱落させる工程を少なくとも有すること
を特徴とする堆積膜形成室のクリーニング方法。(1) In a cleaning method for removing contaminants attached to the inner wall surface of a deposited film forming chamber in a deposited film forming apparatus,
A method for cleaning a deposited film forming chamber, the method comprising at least the step of applying vibration to the deposited film forming chamber to remove contaminants attached to an inner wall surface of the deposition chamber.
の内壁面に付着した汚染物を脱落させる工程に加えて、
さらにドライエッチング工程を有する特許請求の範囲第
（１）項に記載された堆積膜形成室のクリーニング方法
。(2) In addition to the step of applying vibration to the deposited film forming chamber to remove contaminants attached to the inner wall surface of the deposited film forming chamber,
The method for cleaning a deposited film forming chamber according to claim (1), further comprising a dry etching step.
の内壁面に付着した汚染物を脱落させる工程に加えて、
さらに該汚染物を掻き落とす工程を有する特許請求の範
囲第（１）項に記載された堆積膜形成室のクリーニング
方法。(3) In addition to the step of applying vibration to the deposited film forming chamber to remove contaminants attached to the inner wall surface of the deposited film forming chamber,
The method for cleaning a deposited film forming chamber according to claim 1, further comprising the step of scraping off the contaminants.
膜形成室の内壁面に付着した汚染物を掻き落とす工程と
、ドライエッチング工程とを併用する特許請求の範囲第
（１）項に記載された堆積膜形成室のクリーニング方法
。(4) Claim (1) in which a step of applying vibration to the deposited film forming chamber, a step of scraping off contaminants adhering to the inner wall surface of the deposited film forming chamber, and a dry etching step are combined. A method for cleaning a deposited film forming chamber described in .
膜形成室内に堆積膜形成用原料ガスを導入する手段と該
堆積膜形成室内に放電エネルギーを導入する手段とを有
し、前記堆積膜形成室内に設置された基体上に堆積膜を
形成せしめる装置において、前記堆積膜形成室を振動せ
しめる手段を設け、該堆積膜形成室の内壁面に付着した
汚染物を脱落させるようにしたことを特徴とする堆積膜
形成室のクリーニング装置。(5) having a deposited film forming chamber whose interior can be kept airtight, means for introducing a raw material gas for deposited film formation into the deposited film forming chamber, and means for introducing discharge energy into the deposited film forming chamber; In the apparatus for forming a deposited film on a substrate installed in the deposited film forming chamber, a means for vibrating the deposited film forming chamber is provided to remove contaminants attached to an inner wall surface of the deposited film forming chamber. A cleaning device for a deposited film forming chamber, characterized in that:
範囲第（５）項に記載された堆積膜形成室のクリーニン
グ装置。(6) A cleaning device for a deposited film forming chamber as set forth in claim (5), further comprising dry etching means.
染物を掻き落とす手段を設けた特許請求の範囲第（５）
項または第（６）項に記載された堆積膜形成室のクリー
ニング装置。(7) Claim (5) further comprising means for scraping off contaminants adhering to the inner wall surface of the deposited film forming chamber.
A cleaning device for a deposited film forming chamber as described in item (6) or item (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31509487A JPH01156484A (en) | 1987-12-15 | 1987-12-15 | Method and device for cleaning deposited film forming chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31509487A JPH01156484A (en) | 1987-12-15 | 1987-12-15 | Method and device for cleaning deposited film forming chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01156484A true JPH01156484A (en) | 1989-06-20 |
Family
ID=18061339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31509487A Pending JPH01156484A (en) | 1987-12-15 | 1987-12-15 | Method and device for cleaning deposited film forming chamber |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01156484A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090223448A1 (en) * | 2008-01-31 | 2009-09-10 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| CN102308728A (en) * | 2010-07-11 | 2012-01-11 | 刘江涛 | Pentagonal-panel cauliflower cultivator frame |
-
1987
- 1987-12-15 JP JP31509487A patent/JPH01156484A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090223448A1 (en) * | 2008-01-31 | 2009-09-10 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| US20120122318A1 (en) * | 2008-01-31 | 2012-05-17 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| US8461062B2 (en) * | 2008-01-31 | 2013-06-11 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| US8828141B2 (en) * | 2008-01-31 | 2014-09-09 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| CN102308728A (en) * | 2010-07-11 | 2012-01-11 | 刘江涛 | Pentagonal-panel cauliflower cultivator frame |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH06128749A (en) | Method and device for microwave plasma treatment | |
| JP2007531269A5 (en) | ||
| JP2007324154A (en) | Plasma treating apparatus | |
| JPS60155676A (en) | Plasma cvd device | |
| JPH01156484A (en) | Method and device for cleaning deposited film forming chamber | |
| KR20080066511A (en) | Plasma processing apparatus and method | |
| JP2001131753A (en) | Method for cleaning plasma enhanced cvd system | |
| JPS59144132A (en) | Reaction apparatus | |
| JPH07273092A (en) | Plasma treatment apparatus and its cleaning method | |
| JPS5889944A (en) | Chemical vapor depositing device with plasma | |
| JPS621889A (en) | Method and apparatus for cleaning reaction chamber | |
| JPS621888A (en) | Method and apparatus for cleaning reaction chamber | |
| JP2641193B2 (en) | Deposition film manufacturing equipment | |
| JP3404434B2 (en) | Cleaning method for microwave plasma device | |
| JP2009249680A (en) | Deposition method and deposition apparatus | |
| JP2657531B2 (en) | Method of forming amorphous silicon film | |
| JPH02185977A (en) | Film forming vacuum device | |
| JPH0451519A (en) | Semiconductor manufacturing device | |
| JPH0277579A (en) | Method for cleaning deposited film forming device | |
| JP3265047B2 (en) | Dry etching equipment | |
| JPS62232659A (en) | Production of photoconductor | |
| JPH04315797A (en) | Plasme processing device and method of cleaning plasma source thereof | |
| JP2004119572A (en) | Vacuum treatment apparatus | |
| JPH01127685A (en) | Method for cleaning of glow discharge cracking device by gas etching | |
| JPS6024374A (en) | Film forming device for amorphous semiconductor |