JPH0113762B2 - - Google Patents

Info

Publication number
JPH0113762B2
JPH0113762B2 JP56171687A JP17168781A JPH0113762B2 JP H0113762 B2 JPH0113762 B2 JP H0113762B2 JP 56171687 A JP56171687 A JP 56171687A JP 17168781 A JP17168781 A JP 17168781A JP H0113762 B2 JPH0113762 B2 JP H0113762B2
Authority
JP
Japan
Prior art keywords
pulse
amplifier
fet
terminal
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56171687A
Other languages
Japanese (ja)
Other versions
JPS5873210A (en
Inventor
Akio Tanaka
Ikunaga Mihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56171687A priority Critical patent/JPS5873210A/en
Publication of JPS5873210A publication Critical patent/JPS5873210A/en
Publication of JPH0113762B2 publication Critical patent/JPH0113762B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は、A級動作FET増幅器をパルス動作
させるためのパルス動作増幅回路に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pulse operation amplifier circuit for operating a class A operation FET amplifier in pulse operation.

従来この種のFET増幅器は、A級動作で使用
する為、パルス変調された信号を取り扱う場合に
は、信号が入力されていない時にも、電力を消費
し、極めて効率が悪い欠点があつた。
Conventionally, this type of FET amplifier is used in class A operation, so when handling pulse-modulated signals, it consumes power even when no signal is input, resulting in extremely low efficiency.

即ち、従来のFET増幅器は、第1図に示す如
く一定のゲートバイアス電圧がFET7のゲート
端子3に加えられ、又、ドレイン端子4には、一
定の正バイアス電圧が加えられるA級動作バイア
スとなつている。その為、端子1への入力の有無
に関係なく電力を消費しており、パルス振幅変調
された信号を増幅する場合、全体の効率は、極め
て悪くなる欠点があつた。
That is, the conventional FET amplifier has a class A operation bias in which a constant gate bias voltage is applied to the gate terminal 3 of the FET 7, and a constant positive bias voltage is applied to the drain terminal 4, as shown in FIG. It's summery. Therefore, power is consumed regardless of whether there is an input to the terminal 1, and when a pulse amplitude modulated signal is amplified, the overall efficiency becomes extremely poor.

本発明の目的は、パルス振幅変調された信号を
取り扱うFET増幅器においてゲート電圧のバイ
アス回路にスイツチング回路を付加し、信号入力
がない時間、増幅器を非動作状態にすることによ
つて、消費電力の大幅な低減を可能とする増幅回
路を提供することにある。
An object of the present invention is to reduce power consumption by adding a switching circuit to the gate voltage bias circuit in a FET amplifier that handles pulse amplitude modulated signals, and placing the amplifier in a non-operating state when no signal is input. The object of the present invention is to provide an amplifier circuit that enables a significant reduction in power consumption.

上記目的を達成するため、本発明においては、
ゲート端子にスイツチング回路を付加し、入力信
号に同期した駆動パルス端子に加えた時、ゲート
端子に伝達される負のバイアス電圧により、
FET増幅器のゲートをスイツチングすることに
よつて、入力信号がある時間だけ増幅器を動作さ
せ、入力信号がない時は、非動作とした消費電力
の低減を計る回路である。
In order to achieve the above object, in the present invention,
When a switching circuit is added to the gate terminal and a driving pulse synchronized with the input signal is applied to the terminal, the negative bias voltage transmitted to the gate terminal causes
This circuit reduces power consumption by switching the gate of the FET amplifier to operate the amplifier only when there is an input signal, and to disable it when there is no input signal.

次に本発明の一実施例につき第2図と第3図を
参照して説明する。
Next, one embodiment of the present invention will be described with reference to FIGS. 2 and 3.

第2図は、スイツチング回路8を除いて通常の
レーダ送信機の基本構成を示し、それに本発明部
分の構成であるところのスイツチング回路8を付
加し、送信パルスに同期したFET電力増幅器の
ゲート電圧をスイツチングすることにより送信機
の消費電力の低減化を行つた回路である。
Fig. 2 shows the basic configuration of a normal radar transmitter, excluding the switching circuit 8, and adding the switching circuit 8, which is the configuration of the present invention, to it, and adjusting the gate voltage of the FET power amplifier synchronized with the transmission pulse. This circuit reduces the power consumption of the transmitter by switching.

信号源14のCW信号は、パルス変調器15と
変調源16によりパルス振幅変調されFET電力
増幅器7により増幅される。FET電力増幅器7
は、その性質上A級バイアス動作で使用されるが
スイツチング回路8と変調源16により、そのゲ
ート電圧がスイツチングされ、FET増幅器7は、
駆動パルスに同期して、動作する。
The CW signal from the signal source 14 is pulse amplitude modulated by a pulse modulator 15 and a modulation source 16 and amplified by a FET power amplifier 7. FET power amplifier 7
is used in class A bias operation due to its nature, but its gate voltage is switched by the switching circuit 8 and modulation source 16, and the FET amplifier 7
Operates in synchronization with drive pulses.

本回路では、端子3は通常カツトオフ電圧(−
VP)にバイアスされておりFET増幅器7はカツ
トオフ状態にある。スイツチング回路8の入力端
子6に駆動パルスが入力されると、電源入力端子
5からのゲート電圧は、正常動作バイアスにセツ
トされ、FET増幅器7は、正常動作状態になる。
この駆動パルスは、FET増幅器の入力信号パル
スと同期しており、入力信号パルスを増幅し終え
ると駆動パルスも無くなり、ゲートは再びカツト
オフ電圧(−Vp)にバイアスされFET増幅器7
は、働らかなくなる。
In this circuit, terminal 3 is normally connected to the cut-off voltage (-
VP), and the FET amplifier 7 is in a cut-off state. When a drive pulse is input to the input terminal 6 of the switching circuit 8, the gate voltage from the power supply input terminal 5 is set to the normal operating bias, and the FET amplifier 7 enters the normal operating state.
This drive pulse is synchronized with the input signal pulse of the FET amplifier, and when the input signal pulse is amplified, the drive pulse also disappears and the gate is again biased to the cutoff voltage (-Vp) and the FET amplifier 7
will stop working.

FET増幅器7は常時ゲート電圧がカツトオフ
状態に保たれ、非動作状態にあるためFET増幅
器で消費される電力は、ほとんど無視されるの
で、不要な電力消費がなく、消費電力の低減が計
られる。またこの時FET増幅器の減衰特性によ
り本実施例のごとき送信機のFET増幅器をサー
キユレータ10を介して、受信機と組合せたレー
ダ送信機に応用した場合、送信機雑音がサーキユ
レータ10とリミツタ11を通してFET12と、
その出力端子13を含む受信機に漏洩し、受信機
のS/N比が劣化するのを防ぐ働きをする。
Since the gate voltage of the FET amplifier 7 is always kept in a cut-off state and the FET amplifier 7 is in a non-operating state, the power consumed by the FET amplifier is almost ignored, thereby eliminating unnecessary power consumption and reducing power consumption. At this time, due to the attenuation characteristics of the FET amplifier, if the FET amplifier of the transmitter as in this embodiment is applied to a radar transmitter combined with a receiver via the circulator 10, the transmitter noise will pass through the circulator 10 and limiter 11 to the FET 12. and,
It functions to prevent leakage to the receiver including the output terminal 13 and deterioration of the S/N ratio of the receiver.

第3図は、スイツチング回路の詳細を示し、入
力端子6に駆動パルスが加えられるとフオトカツ
プラ17が動作し、トランジスタ18をOFFに
する。その結果トランジスタ19をOFFにする
ため端子の電圧(−Vp)はR1及びR2によつて分
割され−R1・Vp/(R1+R2)となる。図中、2
0はトランジスタ18,19のスイツチング動作
も高速化するためのツユナーダイオードである。
FIG. 3 shows details of the switching circuit. When a driving pulse is applied to the input terminal 6, the photocoupler 17 operates and turns off the transistor 18. As a result, in order to turn off the transistor 19, the terminal voltage (-Vp) is divided by R 1 and R 2 and becomes -R 1 ·Vp/(R 1 +R 2 ). In the figure, 2
0 is a tuner diode for speeding up the switching operation of the transistors 18 and 19.

以上説明したようにFET増幅器をパルス動作
させることによつて消費電力が低減される効果が
ある。また本発明の実施例のごときレーダ送受信
機に使用した場合、消費電力の低減に加え、非送
信時の送信機雑音漏洩により受信機のS/N比が
劣化するのを防ぐ効果がある。
As explained above, the pulse operation of the FET amplifier has the effect of reducing power consumption. Further, when used in a radar transceiver such as the embodiment of the present invention, in addition to reducing power consumption, there is an effect of preventing deterioration of the S/N ratio of the receiver due to transmitter noise leakage when not transmitting.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、従来のFET増幅器のパルス動作回
路図、第2図は、本発明の一実施例を示す回路
図、第3図は、スイツチング回路8の一実施例を
示す回路図である。 7,12…FET、8…スイツチング回路、1
0…サーキユレータ、11…リミツタ、14…信
号源、15…パルス変調器、16…変調信号発生
器、17…フオトカプラ、18,19…トランジ
スタ、20…ツユナーダイオード。
FIG. 1 is a pulse operation circuit diagram of a conventional FET amplifier, FIG. 2 is a circuit diagram showing one embodiment of the present invention, and FIG. 3 is a circuit diagram showing one embodiment of the switching circuit 8. 7, 12...FET, 8...Switching circuit, 1
0...Circulator, 11...Limiter, 14...Signal source, 15...Pulse modulator, 16...Modulation signal generator, 17...Photocoupler, 18, 19...Transistor, 20...Tuner diode.

Claims (1)

【特許請求の範囲】[Claims] 1 高周波信号をパルス変調信号に応じてパルス
変調するパルス変調器と、前記パルス変調器の出
力をソース端子に受けて増幅するA級動作FET
増幅器と、前記FET増幅器のゲート端子に接続
され前記パルス変調信号に同期してゲートバイア
スを切替えるスイツチング回路とを具備し、前記
パルス変調器の出力がないときゲートバイアスを
深くし前記FET増幅器を非動作としたことを特
徴とするパルス動作増幅回路。
1 A pulse modulator that pulse modulates a high frequency signal according to a pulse modulation signal, and a class A operation FET that receives and amplifies the output of the pulse modulator at its source terminal.
an amplifier, and a switching circuit connected to the gate terminal of the FET amplifier to switch the gate bias in synchronization with the pulse modulation signal, and deepens the gate bias and disables the FET amplifier when there is no output from the pulse modulator. A pulse operation amplifier circuit characterized in that the pulse operation amplifier circuit operates as follows.
JP56171687A 1981-10-27 1981-10-27 Pulsively operated amplifying circuit Granted JPS5873210A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56171687A JPS5873210A (en) 1981-10-27 1981-10-27 Pulsively operated amplifying circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56171687A JPS5873210A (en) 1981-10-27 1981-10-27 Pulsively operated amplifying circuit

Publications (2)

Publication Number Publication Date
JPS5873210A JPS5873210A (en) 1983-05-02
JPH0113762B2 true JPH0113762B2 (en) 1989-03-08

Family

ID=15927825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56171687A Granted JPS5873210A (en) 1981-10-27 1981-10-27 Pulsively operated amplifying circuit

Country Status (1)

Country Link
JP (1) JPS5873210A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4602226A (en) * 1985-03-21 1986-07-22 General Electric Company Apparatus for the gated modulation of a radio-frequency carrier signal
JPH0244276A (en) * 1988-08-04 1990-02-14 Tokyo Electric Power Co Inc:The Transmission pulse variable type underground impulse radar apparatus
JPH0615308Y2 (en) * 1989-06-08 1994-04-20 株式会社ケンウッド Keying circuit
JP2989428B2 (en) * 1993-06-17 1999-12-13 本田技研工業株式会社 Time-sharing FM radar system
KR100649322B1 (en) * 2004-03-23 2006-11-24 가부시키가이샤 무라타 세이사쿠쇼 Fet amplifier, pulse modulation module, and radar device
JP2008147943A (en) * 2006-12-08 2008-06-26 Mitsubishi Electric Corp Transmission and reception module device and driving method of transmission and reception module

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633797Y2 (en) * 1977-11-24 1981-08-10

Also Published As

Publication number Publication date
JPS5873210A (en) 1983-05-02

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