JPH01136373A - Manufacture of thin-film semiconductor device - Google Patents

Manufacture of thin-film semiconductor device

Info

Publication number
JPH01136373A
JPH01136373A JP29545687A JP29545687A JPH01136373A JP H01136373 A JPH01136373 A JP H01136373A JP 29545687 A JP29545687 A JP 29545687A JP 29545687 A JP29545687 A JP 29545687A JP H01136373 A JPH01136373 A JP H01136373A
Authority
JP
Japan
Prior art keywords
film
thin
silicon film
silicon
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29545687A
Inventor
Akio Okamoto
Tadashi Serikawa
Shiro Suyama
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegr & Teleph Corp <Ntt> filed Critical Nippon Telegr & Teleph Corp <Ntt>
Priority to JP29545687A priority Critical patent/JPH01136373A/en
Publication of JPH01136373A publication Critical patent/JPH01136373A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To form a thin-film type semiconductor device having excellent characteristics at a low temperature with high yield by forming source/drain electrodes, depositing a silicon film and executing annealing. CONSTITUTION:A semiconductor thin-film containing an impurity (phosphorus, arsenic or boron) in concentration of 1X10<18>(1/cm<3>) is deposited onto an insulating substrate 31, to which specified treatment is executed, as a first layer thin- film, and etched and processed. The semiconductor thin-film is changed into source/drain electrodes 32, 32'. An silicon film 33 is deposited, and annealed and treated. One part of the impurity contained in the semiconductor thin-films 32, 32' is diffused to the silicon film 33 through the annealing treatment, and the resistance of the source/drain electrodes is further lowered. A gate insulating film 34 and a gate electrode 35 are shaped, and lastly a wiring 36 is formed. Consequently, the silicon film in a channel region is not exposed directly to etching treatment. As a result, the surface of silicon is not roughened and contaminated, and the characteristics of the interface between a gate insulating film 23 and an silicon film 22 are improved. Accordingly, a thin-film type semiconductor device having high quality can be formed with excellent yield.
JP29545687A 1987-11-24 1987-11-24 Manufacture of thin-film semiconductor device Pending JPH01136373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29545687A JPH01136373A (en) 1987-11-24 1987-11-24 Manufacture of thin-film semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29545687A JPH01136373A (en) 1987-11-24 1987-11-24 Manufacture of thin-film semiconductor device

Publications (1)

Publication Number Publication Date
JPH01136373A true JPH01136373A (en) 1989-05-29

Family

ID=17820822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29545687A Pending JPH01136373A (en) 1987-11-24 1987-11-24 Manufacture of thin-film semiconductor device

Country Status (1)

Country Link
JP (1) JPH01136373A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203378A (en) * 1989-12-29 1991-09-05 Nec Corp Thin film transistor
JPH07183520A (en) * 1993-12-24 1995-07-21 Nec Corp Thin film transistor
US6677191B1 (en) 1999-11-19 2004-01-13 Koninklijke Philips Electronics N.V. Method of producing a top-gate thin film transistor
JP2010533983A (en) * 2007-07-17 2010-10-28 コヴィオ インコーポレイテッド Contact metal and interconnect metal printing by seed printing and plating
JP2017152725A (en) * 2011-09-23 2017-08-31 株式会社半導体エネルギー研究所 Semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132674A (en) * 1983-01-19 1984-07-30 Seiko Epson Corp Manufacture of semiconductor device
JPS59181064A (en) * 1983-03-31 1984-10-15 Toshiba Corp Semiconductor device
JPS6066471A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Manufacture of thin film transistor
JPS60251667A (en) * 1984-05-28 1985-12-12 Seiko Epson Corp Thin-film transistor
JPS6273660A (en) * 1985-09-26 1987-04-04 Seiko Instr & Electronics Ltd Thin-film transistor device and manufacture thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132674A (en) * 1983-01-19 1984-07-30 Seiko Epson Corp Manufacture of semiconductor device
JPS59181064A (en) * 1983-03-31 1984-10-15 Toshiba Corp Semiconductor device
JPS6066471A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Manufacture of thin film transistor
JPS60251667A (en) * 1984-05-28 1985-12-12 Seiko Epson Corp Thin-film transistor
JPS6273660A (en) * 1985-09-26 1987-04-04 Seiko Instr & Electronics Ltd Thin-film transistor device and manufacture thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203378A (en) * 1989-12-29 1991-09-05 Nec Corp Thin film transistor
JPH07183520A (en) * 1993-12-24 1995-07-21 Nec Corp Thin film transistor
US6677191B1 (en) 1999-11-19 2004-01-13 Koninklijke Philips Electronics N.V. Method of producing a top-gate thin film transistor
JP2010533983A (en) * 2007-07-17 2010-10-28 コヴィオ インコーポレイテッド Contact metal and interconnect metal printing by seed printing and plating
US8617992B2 (en) 2007-07-17 2013-12-31 Kovio, Inc. Method of forming metal silicide contact and metal interconnect
JP2014150277A (en) * 2007-07-17 2014-08-21 Kovio Inc Printing of contact metal and interconnection metal by seed printing and plating
JP2017152725A (en) * 2011-09-23 2017-08-31 株式会社半導体エネルギー研究所 Semiconductor device

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