JPH01129438A - Vacuum suction anchor block - Google Patents
Vacuum suction anchor blockInfo
- Publication number
- JPH01129438A JPH01129438A JP62287335A JP28733587A JPH01129438A JP H01129438 A JPH01129438 A JP H01129438A JP 62287335 A JP62287335 A JP 62287335A JP 28733587 A JP28733587 A JP 28733587A JP H01129438 A JPH01129438 A JP H01129438A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- outer periphery
- vacuum suction
- protrusions
- fixing table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 abstract description 2
- 239000011295 pitch Substances 0.000 abstract 2
- 238000007493 shaping process Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 35
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は薄板の固定手段に係り、特に半導体プロセスに
用いるウェーハを平坦に固定するのに好適な真空吸着固
定台に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a thin plate fixing means, and more particularly to a vacuum suction fixing table suitable for flatly fixing a wafer used in a semiconductor process.
従来の装置は特公昭６０−１５１４７に示されるように
円筒状のピンを容器の中に組立てる構造となっていた。The conventional device has a structure in which a cylindrical pin is assembled into a container, as shown in Japanese Patent Publication No. 60-15147.
上記従来技術は、複数個の突起の形成を組立て構造とし
ているため、その配列間隔を狭めることが難しく、突起
と突起の間のウェーハが大気圧によって変形することに
対する配慮がされておらず平坦度を高精度に保つ点で問
題があった。また。The above conventional technology uses an assembled structure to form multiple protrusions, so it is difficult to narrow the arrangement interval, and there is no consideration given to deformation of the wafer between the protrusions due to atmospheric pressure, resulting in poor flatness. There was a problem in maintaining high accuracy. Also.
従来技術では、突起を包含している外周部が一つのリム
構造であるため、外部から漏れて侵入する大気の影響に
ついて配慮されていないため、ウェーハ外周部の吸引力
が弱くなって、吸引固定時にウェーハ周辺の平坦度が低
下する問題があった。In conventional technology, the outer periphery that includes the protrusions has a single rim structure, so no consideration is given to the influence of atmospheric air leaking in from the outside, which weakens the suction force on the wafer outer periphery and prevents the wafer from being suctioned and fixed. At times, there was a problem that the flatness around the wafer deteriorated.
本発明の目的は、多数の突起を用いて薄膜を支持する際
の大気圧による変形と、薄板を吸引固定する際のウェー
ハ外周の平坦度を良好にすることにある。An object of the present invention is to improve the deformation due to atmospheric pressure when supporting a thin film using a large number of protrusions, and the flatness of the wafer's outer periphery when suctioning and fixing the thin film.
上記目的は、ウェーハ裏面を接触支持する突起の配列ピ
ッチを小さくするため一つの母材からマトリックス状に
突起部を加工し形成することと、外周部に、突起部の存
在する領域とは独立に真空排気の可能な溝を設けた構造
にすることにより達成される。The above purpose is to process and form protrusions in a matrix form from one base material in order to reduce the arrangement pitch of protrusions that contact and support the back surface of the wafer, and to form protrusions on the outer periphery independently of the area where the protrusions are present. This is achieved by creating a structure with grooves that allow vacuum evacuation.
突起部を一つの母材から切削等により形成することによ
り突起部の間隔を小さくできるので、薄いウェーハが大
気圧で押されてたわみ、変形することを防止できる。ま
た突起部の間隔が小さくなるため流量抵抗が増し、ウェ
ーハ外周部からの大気浸入の影響をウェーハ裏面の負圧
空間の中央の領域まで伝搬することを防ぐことができる
。従って、該負圧空間の外周部近傍に吸収孔を設けて。By forming the protrusions from a single base material by cutting or the like, the spacing between the protrusions can be reduced, thereby preventing the thin wafer from bending and deforming due to being pushed by atmospheric pressure. Furthermore, since the interval between the protrusions becomes smaller, the flow resistance increases, and it is possible to prevent the influence of atmospheric air from entering from the outer periphery of the wafer from propagating to the central region of the negative pressure space on the back surface of the wafer. Therefore, an absorption hole is provided near the outer periphery of the negative pressure space.
中央の吸引孔よりも排気速度を大きくすることにより、
大気浸入による吸引力の低下を容易に防止可能となる。By increasing the exhaust speed than the central suction hole,
It is possible to easily prevent a decrease in suction power due to air infiltration.
さらに外周部に連続した溝を設け。Furthermore, a continuous groove is provided on the outer periphery.
上述の負圧空間とは独立に排気することにより、ウェー
ハ周辺からの大気の侵入の影響を完全に除去することが
できる。従って、ウェーハの平坦度を極めて高精度に保
持した状態で吸引固定することが可能となる。By evacuating the vacuum space independently of the negative pressure space described above, it is possible to completely eliminate the influence of atmospheric air entering from around the wafer. Therefore, it is possible to suction and fix the wafer while maintaining its flatness with extremely high precision.
以下、本発明の一実施例を第１図ににより説明する。ａ
は本発明吸着台の平面図、ｂは側面図、Ｃは突起部と吸
引孔との拡大平面図、ｄは突起部と吸引孔の断面図、ｅ
は外周部の断面図であり、各々共通な部位には同一番号
を付しである。An embodiment of the present invention will be described below with reference to FIG. a
is a plan view of the suction table of the present invention, b is a side view, C is an enlarged plan view of the protrusion and the suction hole, d is a cross-sectional view of the protrusion and the suction hole, e
is a sectional view of the outer periphery, and common parts are given the same numbers.
吸着台４には、外周部２に包含された領域に複数個の突
起部１がある。突起部１はｃ、ｄ図に示すように、縦、
横のピッチが２ｍｍで断面の交差角度が９０°をなす四
角雄状の形状である。突起部の先端の面積は０．００２
５ｍｍ２−０．０１ｍｍ”である。複数の突起部のある
領域の中央に吸引孔５があり、外周部近傍に８個の吸引
力がある。The suction table 4 has a plurality of protrusions 1 in an area included in the outer circumferential portion 2 . As shown in figures c and d, the protrusion 1 is vertical,
It has a square male shape with a lateral pitch of 2 mm and a cross-section angle of 90°. The area of the tip of the protrusion is 0.002
5mm2-0.01mm". There is a suction hole 5 in the center of the area where the plurality of protrusions are located, and there are eight suction forces near the outer periphery.
吸引孔５は絞り弁１０を介して、また吸引孔７は、絞り
弁１２を介して図示していない排気系に接続している。The suction hole 5 is connected through a throttle valve 10, and the suction hole 7 is connected through a throttle valve 12 to an exhaust system (not shown).
外周部２は吸引固定するウェーハの輪郭に沿った平面形
状をしている。さらに、外周部２は溝部２０を有し吸引
孔６と絞り弁９を介して図示していない排気系に接続し
ている６外周部２は断面図ｅに示しであるように、その
幅は３ｍｍで、中央に幅１．５ｍｍ深さ２ｍｍの溝２０
が形成されている。The outer peripheral portion 2 has a planar shape that follows the outline of the wafer to be fixed by suction. Furthermore, the outer circumference 2 has a groove 20 and is connected to an exhaust system (not shown) through a suction hole 6 and a throttle valve 9.As shown in cross-sectional view e, the width of the outer circumference 2 is 3mm, with groove 20 in the center 1.5mm wide and 2mm deep.
is formed.
なお、吸引孔５，７の拡大図をｃ、ｄに示しであるが、
その形状はいずれも等しく、孔２１の形状であり、その
直径は１ｍｍである。また突起部１と外周部２とは図す
、ｅに示す通り同一の平面となるように平坦に加工され
ている。Note that enlarged views of the suction holes 5 and 7 are shown in c and d.
They all have the same shape, that is, the shape of a hole 21, and the diameter thereof is 1 mm. Further, the protruding portion 1 and the outer circumferential portion 2 are processed to be flat so that they are on the same plane, as shown in e in the figure.
絞り弁９，１０，１．２はウェーハの裏面を吸引固定す
る際の排気速度を変え、外周部に近い所程吸引力を大き
くするように吸引圧分布を生じている。絞り弁の流量抵
抗は絞り弁９，１．２．１０の順で大きくなるように設
定しである。従って、大気の侵入漏れの大きいウェーハ
外周部の吸引力が損なわれなくなる。The throttle valves 9, 10, and 1.2 change the exhaust speed when suctioning and fixing the back surface of the wafer, and create a suction pressure distribution such that the suction force is increased closer to the outer periphery. The flow resistance of the throttle valves is set to increase in the order of throttle valves 9, 1, 2, and 10. Therefore, the suction force at the outer periphery of the wafer, where there is a large amount of air intrusion and leakage, is not impaired.
第２図は、１１辺部に溝部のない従来の吸着台で４イン
チウェーハを吸引固定した場合のウェーハ表面の直径上
を片側の周辺部を含む領域の平坦度を３次元測定機で測
定した一例である。図中のスケールＷは吸着台から外側
の部分でウェーハの平坦度が急激に悪化している領域を
示しており、この例では約８ｍｍに及んでいる。Ｗの領
域を除いた内側では、平坦度が±０．５μｍであるのに
、Ｗの領域を含めると５μｍ以上に悪化している。Figure 2 shows the flatness of the area including the peripheral area on one side of the wafer surface diameter measured using a three-dimensional measuring machine when a 4-inch wafer is suctioned and fixed using a conventional suction table with no grooves on the 11 sides. This is an example. Scale W in the figure indicates a region where the flatness of the wafer sharply deteriorates outside the suction table, and in this example, it extends to about 8 mm. Although the flatness is ±0.5 μm on the inside excluding the W region, it deteriorates to 5 μm or more when the W region is included.
第３図は本発明による外周部に溝を設けた吸着台を用い
て４インチウェーハを吸引固定した場合の前回と同じ位
置のウェーハ表面の平坦度の測定結果である。外周部に
おけるウェーハ表面の平坦度の悪化は認められず、ウェ
ーハ全面で±０．５μｍの平坦度が得られている。FIG. 3 shows the measurement results of the flatness of the wafer surface at the same position as the previous time when a 4-inch wafer was suctioned and fixed using the suction stand having grooves on the outer periphery according to the present invention. No deterioration in the flatness of the wafer surface was observed at the outer peripheral portion, and a flatness of ±0.5 μm was obtained over the entire wafer surface.
本発明の別の実施例の平面図を第４図に示す。A plan view of another embodiment of the invention is shown in FIG.
吸着台４０は、前述の発明例と同一形状の四角踵状の突
起部４１とそれを包含する外周部４２から構成される。The suction table 40 is composed of a square heel-shaped protrusion 41 having the same shape as the above-described example of the invention, and an outer peripheral part 42 that includes the protrusion 41 .
外周部４２には溝が形成され吸引孔と絞り弁４４を経て
図示していない排気系に接続している。複数の突起部の
配列から成る領域は絞り弁４３を経て図示していない排
気系に接続している。なお本例の吸着台は、ウェーハの
オリエンテーションフラットを用いてウェーハの位置決
めを行うための回転支持部４５，４６，４７，４８を有
している。図示していない給気系に接続した駆動ピスト
ンによって、支持部４８を開閉させて、吸着台上でウェ
ーハを機械的に位置決めすることができる。A groove is formed in the outer peripheral portion 42 and is connected to an exhaust system (not shown) through a suction hole and a throttle valve 44. The area consisting of the array of a plurality of protrusions is connected via a throttle valve 43 to an exhaust system (not shown). Note that the suction table of this example has rotary support parts 45, 46, 47, and 48 for positioning the wafer using a wafer orientation flat. A drive piston connected to an air supply system (not shown) opens and closes the support section 48 to mechanically position the wafer on the suction table.
なお、吸着台の逃げ部４９は、図示していないウェーハ
裏面吸引搬送アームの挿入を可能とする領域である。Note that the relief portion 49 of the suction table is an area into which a wafer backside suction and transfer arm (not shown) can be inserted.
以上述べた発明の吸着台の材質は耐摩耗性の良いアルミ
合金Ａ７０７５ （日立製作新製ＡＨ８）を用いた。し
かし材質としては、吸着固定するウェーハと熱膨張率が
近いものが好ましく、他の材質を用いることも可能であ
る。例えば、シリコンウェーハ用の吸着台としてはシリ
コン単結晶を用いて作製することが望ましい。シリコン
単結晶製の吸着台の作り方としては、異方性エツチング
を用いて四角踵状の突起を作り、外周部は等方性エツチ
ングを用いて形成することが可能である。これらのエツ
チング技術は半導体プロセス分野で公知である。もちろ
ん機械加工も可能である。加工後の突起部と外周部に窒
化膜形成処理微行うと耐摩耗性が向上する。The suction table of the invention described above is made of aluminum alloy A7075 (New Hitachi AH8), which has good wear resistance. However, it is preferable that the material has a coefficient of thermal expansion close to that of the wafer to be fixed by suction, and other materials may also be used. For example, it is desirable to manufacture a suction stand for silicon wafers using silicon single crystal. To make a suction stand made of silicon single crystal, it is possible to use anisotropic etching to form a square heel-shaped protrusion, and to form the outer periphery using isotropic etching. These etching techniques are well known in the semiconductor processing field. Of course, machining is also possible. Wear resistance is improved by forming a nitride film on the protrusion and outer circumference after processing.
次に複数の突起部分の配列ピッチについて述べる。突起
部や外周部の先端で支持されて真空吸引されるウェーハ
面には大気圧が負荷され、支持の存在しない所がたわみ
変形する。ウェーハの変形量は、分布荷重の加わる両端
支持梁として近似計算することができる０幅をｂ、厚さ
をり、長さをわみ量δは
となる。今幅すを突起部のピッチと仮定し、長さａを正
方配列の場合の対角長１２・ｂとし、大気圧０．０１ｋ
ｇ／ｍｍ” （１００ＫＰａ）が単位幅すに加わるちと
とすると、Ｗは０．０１ Ｘ ｂとなり式（１）は
さらに４インチシリコンウェーハの場合Ｅ＝２×１０’
ｋｇ／ｍｍ”、ｈ ＝ ０ 、４ ｍ ｍとすと、式％
式％（３）
より、４ｍｍ以下のピッチが望ましくなる。シリコンウ
ェーハの裏面は、ポリッシング後加工変質層を除去する
ためエツチング処理が施されているため、＊少な凹部が
多く、突起部の先端部の面積を０．００２５ｍｍ”〜０
．０１ｍｍ２とした場合でも、全ての突起部の先端がウ
ェーハ裏面に接触するのは困難と考えられるため、実際
の突起部の配列ピッチは余裕を見込んで２ｍｍ以下が望
ましい。Next, the arrangement pitch of the plurality of protrusions will be described. Atmospheric pressure is applied to the surface of the wafer, which is supported by the tip of the protrusion or the outer periphery and subjected to vacuum suction, and the portions where there is no support are deflected and deformed. The amount of deformation of the wafer can be approximately calculated as a beam supporting both ends to which a distributed load is applied.The width is b, the thickness is multiplied, and the deflection amount δ is the length. Assume that the width is the pitch of the protrusions, the length a is the diagonal length 12·b in the case of a square arrangement, and the atmospheric pressure is 0.01k.
g/mm" (100 KPa) is added to the unit width, W becomes 0.01
kg/mm”, h = 0, 4 mm, the formula %
From formula % (3), a pitch of 4 mm or less is desirable. The back side of the silicon wafer is etched to remove the damaged layer after polishing, so there are many small recesses, and the area of the tip of the protrusion is 0.0025 mm to 0.
．． Even when the pitch is 01 mm2, it is considered difficult for the tips of all the protrusions to come into contact with the back surface of the wafer, so it is desirable that the actual arrangement pitch of the protrusions is 2 mm or less, allowing for some margin.
なお、この配列ピッチの距離は、ウェーハの材質や厚さ
やたゆみ量の許容値により当然変わるが、パターンの微
細化の進む、半導体分野においては、ウェーハのたわみ
量が現在より一桁小さくなることが要求されており、そ
のためにも、突起部のピッチは２ ｍ ｍ以下にするこ
とが必要である。Note that the distance of this array pitch will naturally vary depending on the material, thickness, and allowable amount of sag of the wafer, but in the semiconductor field where patterns are becoming increasingly finer, the amount of wafer sag can be reduced by an order of magnitude compared to the current level. Therefore, the pitch of the protrusions must be 2 mm or less.
（（４）式において６６０．０００１ｍｍとするには５
５２ｍｍとなる）
［発明の効果〕
本発明によりば、ウェーハを±０．５μｍ以下の平坦度
で吸引固定でき、しかも突起状の支持点で支るため、塵
埃等の介在による平坦度の悪化も防止できるので、微細
パターン形成を必要とする半導体プロセスの試料台に適
用する」二で効果がある。(In equation (4), to set it to 660.0001 mm, it is 5
52 mm) [Effects of the Invention] According to the present invention, the wafer can be fixed by suction with a flatness of ±0.5 μm or less, and since it is supported by a protruding support point, there is no possibility of deterioration of the flatness due to intervening dust or the like. This is effective when applied to sample stands for semiconductor processes that require fine pattern formation.
第１図は本発明の実施例の図で、その（ａ）は平面図、
（ｂ）は側面図、（Ｃ）は突起部の平面拡大図、（ｄ）
及び（ｅ）は拡大断面図、第２図は従来例による測定デ
ータを示す図、第３図は本発明による測定データを示す
図、第４図は第２の実施例の平面図である。
１・・・突起部、２・・・外周部、４・・・吸着台、５
・・・吸引孔、６・・・吸引孔、２０・・・溝部。
−＠ｒ−ど ゝλ／
第３図FIG. 1 is a diagram of an embodiment of the present invention, in which (a) is a plan view;
(b) is a side view, (C) is an enlarged plan view of the protrusion, (d)
2 is a diagram showing measurement data according to the conventional example, FIG. 3 is a diagram showing measurement data according to the present invention, and FIG. 4 is a plan view of the second embodiment. 1... Projection, 2... Outer periphery, 4... Adsorption stand, 5
... Suction hole, 6... Suction hole, 20... Groove. -@r-do ゝλ/ Figure 3
Claims (1)
包含する形の外周部の上端とに接するように板状試料を
設置することにより板状試料の裏面の外周部に包含され
た空間を負圧にして吸引固定する真空吸着固定台におい
て、所定の位置に設けた吸引孔からの吸引圧力を調整す
ることにより、板状試料と外周部に包含される空間の圧
力分布を調整可能とし、外周部に近い所程該空間の中央
の領域より排気速度を大にすることを可能としたことを
特徴とする真空吸着固定台。 ２、複数個の突起部を包含する外周部に連続した溝を設
けて、該突起部の存在する領域とは独立に負圧を発生さ
せることを可能とした構造を特徴とする特許請求の範囲
第１項記載の真空吸着固定台。 ３、真空吸着固定台の材料を板状試料と熱膨張率が等し
い材料で形成することを特徴とする特許請求の範囲第１
項記載の真空吸着固定台。 ４、板状試料を半導体プロセスで用いるウェーハとし、
突起部と外周部とを形成する材料をシリコン単結晶とし
、かつ該突起部先端と外周部上端の板状試料と接触する
部分を窒化膜形成処理して、ウェーハ裏面より硬度を高
くしたことを特徴とする特許請求の範囲第１項記載の真
空吸着固定台。 ５、複数個の突起部分は一つの母材から、機械的または
化学的に削り出して作ったものであることを特徴とする
特許請求の範囲第１項記載の真空吸着固定台。 ６、複数個の突起部分の配列ピッチを２ｍｍ以下にする
ことを特徴とする特許請求の範囲第１項記載の真空吸着
固定台。[Scope of Claims] 1. The back surface of the plate-shaped sample is set up so as to be in contact with the tips of a plurality of protrusions forming the same plane and the upper end of the outer periphery of a shape that includes the protrusions. In the vacuum suction fixing table, which suctions and fixes the space contained in the outer periphery of the sample by applying negative pressure, by adjusting the suction pressure from the suction hole provided at a predetermined position, the space contained in the outer periphery of the plate-like sample is adjusted. A vacuum suction fixing table characterized in that the pressure distribution in the space can be adjusted, and the pumping speed can be increased closer to the outer periphery than in the center of the space. 2. Claims characterized by a structure in which a continuous groove is provided in the outer periphery that includes a plurality of protrusions, thereby making it possible to generate negative pressure independently of the area where the protrusions are present. The vacuum suction fixing table described in item 1. 3. Claim 1, characterized in that the material of the vacuum suction fixing table is made of a material having the same coefficient of thermal expansion as that of the plate-shaped sample.
Vacuum suction fixing stand as described in section. 4. Use the plate-shaped sample as a wafer used in a semiconductor process,
The material forming the protrusion and the outer periphery is silicon single crystal, and the tip of the protrusion and the upper end of the outer periphery, which contact the plate-shaped sample, are treated to form a nitride film to have higher hardness than the back surface of the wafer. A vacuum suction fixing table according to claim 1. 5. The vacuum suction fixing table according to claim 1, wherein the plurality of protrusions are mechanically or chemically carved out of a single base material. 6. The vacuum suction fixing table according to claim 1, wherein the arrangement pitch of the plurality of protrusions is 2 mm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62287335A JP2574818B2 (en) | 1987-11-16 | 1987-11-16 | Vacuum suction fixing table and vacuum suction fixing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62287335A JP2574818B2 (en) | 1987-11-16 | 1987-11-16 | Vacuum suction fixing table and vacuum suction fixing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01129438A true JPH01129438A (en) | 1989-05-22 |
| JP2574818B2 JP2574818B2 (en) | 1997-01-22 |
Family
ID=17716034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62287335A Expired - Fee Related JP2574818B2 (en) | 1987-11-16 | 1987-11-16 | Vacuum suction fixing table and vacuum suction fixing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2574818B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07297262A (en) * | 1994-01-31 | 1995-11-10 | Applied Materials Inc | Handling of wafer in vacuum chamber using vacuum |
| JPH10242255A (en) * | 1997-02-28 | 1998-09-11 | Kyocera Corp | Vacuum chuck device |
| US6710857B2 (en) | 2000-03-13 | 2004-03-23 | Nikon Corporation | Substrate holding apparatus and exposure apparatus including substrate holding apparatus |
| US6844921B2 (en) * | 2001-11-20 | 2005-01-18 | Oki Electric Industry Co., Ltd. | Wafer holder |
| WO2006075356A1 (en) * | 2005-01-11 | 2006-07-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor manufacturing apparatus |
| WO2008155860A1 (en) * | 2007-06-21 | 2008-12-24 | Hitachi Plasma Display Limited | Die coater and process for producing substrate structure for plasma display panel |
| JP2012119591A (en) * | 2010-12-02 | 2012-06-21 | Fuji Electric Co Ltd | Suction device and suction method |
| JP2014216440A (en) * | 2013-04-25 | 2014-11-17 | 富士電機株式会社 | Chucking plate for semiconductor wafer process |
| JP2016197745A (en) * | 2016-07-15 | 2016-11-24 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Mounting device for mounting patterned wafer |
| JP2018529995A (en) * | 2015-09-28 | 2018-10-11 | エーエスエムエル ネザーランズ ビー．ブイ． | Substrate holder, lithographic apparatus, and device manufacturing method |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1077393A2 (en) | 1999-08-19 | 2001-02-21 | Canon Kabushiki Kaisha | Substrate attracting and holding system for use in exposure apparatus |
| JP4040423B2 (en) | 2002-10-16 | 2008-01-30 | キヤノン株式会社 | Substrate holding device |
| KR100841381B1 (en) * | 2007-02-01 | 2008-06-26 | 미쓰비시덴키 가부시키가이샤 | Semiconductor manufacturing apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5689744A (en) * | 1979-12-24 | 1981-07-21 | Fujitsu Ltd | X-ray transfer device |
| JPS609626A (en) * | 1983-06-30 | 1985-01-18 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Pinch chuck |
| JPS62221130A (en) * | 1986-03-24 | 1987-09-29 | Toshiba Corp | Vacuum chuck apparatus |
-
1987
- 1987-11-16 JP JP62287335A patent/JP2574818B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5689744A (en) * | 1979-12-24 | 1981-07-21 | Fujitsu Ltd | X-ray transfer device |
| JPS609626A (en) * | 1983-06-30 | 1985-01-18 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Pinch chuck |
| JPS62221130A (en) * | 1986-03-24 | 1987-09-29 | Toshiba Corp | Vacuum chuck apparatus |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07297262A (en) * | 1994-01-31 | 1995-11-10 | Applied Materials Inc | Handling of wafer in vacuum chamber using vacuum |
| JPH10242255A (en) * | 1997-02-28 | 1998-09-11 | Kyocera Corp | Vacuum chuck device |
| US6710857B2 (en) | 2000-03-13 | 2004-03-23 | Nikon Corporation | Substrate holding apparatus and exposure apparatus including substrate holding apparatus |
| US6844921B2 (en) * | 2001-11-20 | 2005-01-18 | Oki Electric Industry Co., Ltd. | Wafer holder |
| US8696816B2 (en) | 2005-01-11 | 2014-04-15 | Mitsubishi Electric Corporation | Semiconductor manufacturing apparatus |
| JPWO2006075356A1 (en) * | 2005-01-11 | 2008-06-12 | 三菱電機株式会社 | Semiconductor manufacturing equipment |
| JP4611292B2 (en) * | 2005-01-11 | 2011-01-12 | 三菱電機株式会社 | Semiconductor manufacturing equipment |
| WO2006075356A1 (en) * | 2005-01-11 | 2006-07-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor manufacturing apparatus |
| WO2008155860A1 (en) * | 2007-06-21 | 2008-12-24 | Hitachi Plasma Display Limited | Die coater and process for producing substrate structure for plasma display panel |
| JP2012119591A (en) * | 2010-12-02 | 2012-06-21 | Fuji Electric Co Ltd | Suction device and suction method |
| US9233455B2 (en) | 2010-12-02 | 2016-01-12 | Fuji Electric Co., Ltd. | Chucking device and chucking method |
| JP2014216440A (en) * | 2013-04-25 | 2014-11-17 | 富士電機株式会社 | Chucking plate for semiconductor wafer process |
| JP2018529995A (en) * | 2015-09-28 | 2018-10-11 | エーエスエムエル ネザーランズ ビー．ブイ． | Substrate holder, lithographic apparatus, and device manufacturing method |
| US10599049B2 (en) | 2015-09-28 | 2020-03-24 | Asml Netherlands B.V. | Substrate holder, a lithographic apparatus and method of manufacturing devices |
| JP2016197745A (en) * | 2016-07-15 | 2016-11-24 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Mounting device for mounting patterned wafer |
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| Publication number | Publication date |
|---|---|
| JP2574818B2 (en) | 1997-01-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |