JPH01125866A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPH01125866A
JPH01125866A JP28222887A JP28222887A JPH01125866A JP H01125866 A JPH01125866 A JP H01125866A JP 28222887 A JP28222887 A JP 28222887A JP 28222887 A JP28222887 A JP 28222887A JP H01125866 A JPH01125866 A JP H01125866A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
formed
silicon
photoresist
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28222887A
Inventor
Seiichi Ishihara
Takashi Toida
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To produce an LDD structure provided with a high and low concentration regions precise in design formed in a single ion implantation process by a method wherein the effect is fully exploited of side-etching whereto a polycrystalline silicon gate electrode is subjected.
CONSTITUTION: On a silicon substrate 12, a silicon oxide film 14 and a silicon nitride film 16 are formed into an insulating film 17 and then a polycrystalline silicon film 18 is formed to serve as gate electrode material. A photoresist is selectively formed and then dry etching is accomplished to consecutively affect the polycrystalline silicon film 18 and the silicon nitride film 16. When the silicon nitride film 16 is etched, the side also experience etching of the polycrystalline silicon film 18 not covered by the photoresist, which results in a polycrystalitne silicon gate electrode 20 finer in pattern than the photoresist. A process follows wherein ions are implanted into the whole surface for the formation of a high concentration impurity region 24 and a low concentration impurity region 20. An interlayer insulating film is formed, wherein a contact window 30 is provided. A wiring metal 32 is finally built for the completion of a MOS transistor of an LDD structure.
COPYRIGHT: (C)1989,JPO&Japio
JP28222887A 1987-11-10 1987-11-10 Manufacture of semiconductor integrated circuit Pending JPH01125866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28222887A JPH01125866A (en) 1987-11-10 1987-11-10 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28222887A JPH01125866A (en) 1987-11-10 1987-11-10 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH01125866A true true JPH01125866A (en) 1989-05-18

Family

ID=17649723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28222887A Pending JPH01125866A (en) 1987-11-10 1987-11-10 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH01125866A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555573A (en) * 1991-08-26 1993-03-05 Sharp Corp Thin film transistor and manufacture thereof
JPH06120249A (en) * 1991-12-24 1994-04-28 Semiconductor Energy Lab Co Ltd Manufacture of mos transistor and structure thereof
US6337231B1 (en) 1993-05-26 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6800528B2 (en) 2002-06-14 2004-10-05 Oki Electric Industry Co., Ltd. Method of fabricating LDMOS semiconductor devices
US6808964B2 (en) * 1999-12-13 2004-10-26 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device and liquid crystal display
US7618881B2 (en) 2006-01-23 2009-11-17 Nec Corporation Thin-film transistor and manufacturing method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555573A (en) * 1991-08-26 1993-03-05 Sharp Corp Thin film transistor and manufacture thereof
JPH06120249A (en) * 1991-12-24 1994-04-28 Semiconductor Energy Lab Co Ltd Manufacture of mos transistor and structure thereof
US7087962B1 (en) 1991-12-24 2006-08-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming a MOS transistor having lightly dopped drain regions and structure thereof
US6337231B1 (en) 1993-05-26 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6808964B2 (en) * 1999-12-13 2004-10-26 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device and liquid crystal display
US6800528B2 (en) 2002-06-14 2004-10-05 Oki Electric Industry Co., Ltd. Method of fabricating LDMOS semiconductor devices
US7618881B2 (en) 2006-01-23 2009-11-17 Nec Corporation Thin-film transistor and manufacturing method thereof

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