JPH01124287A - Manufacture of printed-circuit board - Google Patents
Manufacture of printed-circuit boardInfo
- Publication number
- JPH01124287A JPH01124287A JP28263387A JP28263387A JPH01124287A JP H01124287 A JPH01124287 A JP H01124287A JP 28263387 A JP28263387 A JP 28263387A JP 28263387 A JP28263387 A JP 28263387A JP H01124287 A JPH01124287 A JP H01124287A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- copper oxide
- layer
- thin layer
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000010949 copper Substances 0.000 claims abstract description 33
- 229910052802 copper Inorganic materials 0.000 claims abstract description 27
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 24
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000005751 Copper oxide Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 5
- 239000007800 oxidant agent Substances 0.000 claims abstract description 5
- 239000011368 organic material Substances 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 2
- 238000007772 electroless plating Methods 0.000 abstract description 13
- 239000000243 solution Substances 0.000 abstract description 9
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 abstract description 6
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 6
- 239000004809 Teflon Substances 0.000 abstract description 5
- 229920006362 Teflon® Polymers 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 abstract description 3
- 239000007864 aqueous solution Substances 0.000 abstract description 3
- 239000004593 Epoxy Substances 0.000 abstract description 2
- 239000004744 fabric Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 10
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 8
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 8
- 229940112669 cuprous oxide Drugs 0.000 description 8
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000007788 roughening Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- FUSNOPLQVRUIIM-UHFFFAOYSA-N 4-amino-2-(4,4-dimethyl-2-oxoimidazolidin-1-yl)-n-[3-(trifluoromethyl)phenyl]pyrimidine-5-carboxamide Chemical compound O=C1NC(C)(C)CN1C(N=C1N)=NC=C1C(=O)NC1=CC=CC(C(F)(F)F)=C1 FUSNOPLQVRUIIM-UHFFFAOYSA-N 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 244000292604 Salvia columbariae Species 0.000 description 1
- 235000012377 Salvia columbariae var. columbariae Nutrition 0.000 description 1
- 235000001498 Salvia hispanica Nutrition 0.000 description 1
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000014167 chia Nutrition 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- 229910000377 hydrazine sulfate Inorganic materials 0.000 description 1
- 239000012493 hydrazine sulfate Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 1
- 229960002218 sodium chlorite Drugs 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、印刷配線板の製造法に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a method for manufacturing printed wiring boards.
(従来の技術)
印刷配線板の製造法としては、銅張り積層板をエツチン
グして回路加工を行うエツチドフォイル法、絶縁基板に
無電解めっきのよって導電性金属を所望の厚さまでめっ
きし配線パターンを形成するアディティブ法、更には絶
縁基板に薄い下地金属層を形成し、めっきレジスト形成
−パターンめっき−めっきレジスト除去→クイックエツ
チングによる回路加工を行うアンクラッド法等が提案さ
れている。(Prior art) Printed wiring boards are manufactured using the etched foil method, in which circuits are processed by etching a copper-clad laminate, or electroless plating is used to plate conductive metal on an insulating substrate to a desired thickness for wiring. An additive method for forming a pattern, and an unclad method for forming a thin base metal layer on an insulating substrate and performing circuit processing by forming a plating resist, pattern plating, removing the plating resist, and then quick etching have been proposed.
(発明が解決しようとする問題点)
エツチドフォイル法に於いては、サイドエツチングの問
題があり高密度配線板の製造は困難である。アディティ
ブ法では、接触剤層付基板表面を粗化液を用いなければ
ならないこの場合使用できる粗化液のほとんどは酸化剤
を含むものであり、毒性が強い。そのために作業環境が
悪いこと、及び特別な廃液処理が必要である。また、粗
化液に可溶な成分は一般に電気絶縁性が悪い。(Problems to be Solved by the Invention) In the etched foil method, there is a problem of side etching, making it difficult to manufacture high-density wiring boards. In the additive method, it is necessary to use a roughening liquid to roughen the surface of the substrate with the contact agent layer.Most of the roughening liquids that can be used in this case contain an oxidizing agent and are highly toxic. This requires a poor working environment and special waste liquid treatment. In addition, components soluble in the roughening solution generally have poor electrical insulation properties.
例えば、耐湿絶縁特性、高温絶縁特性の劣化がある。ま
た、接着剤層の耐熱性が低く。For example, there is deterioration in moisture-resistant insulation properties and high-temperature insulation properties. Additionally, the heat resistance of the adhesive layer is low.
寸法変化率も高いので、高度な寸法精度やスルーホール
接続信頼性が要求される多層プリント配線板への適用に
は限界がある。Since the dimensional change rate is also high, there are limits to its application to multilayer printed wiring boards that require high dimensional accuracy and through-hole connection reliability.
アンクラッド法に於ける配線板の微細・高密度化は下地
金属層の厚さに依存している。The fineness and high density of wiring boards in the uncladding method depend on the thickness of the underlying metal layer.
すなはち、エツチングする下地金属層の厚さが薄い程エ
ツチング精度が高くなる。そこで高密度配線板を形成す
る場合は5〜9μmと薄い銅箔を用いた銅張り積層板を
ベースとしているが2w4箔のキャリアーであるアルミ
箔(厚さ約50μm)を積層後物理的あるいは化学的に
除去する必要があることなど欠点がある。In other words, the thinner the underlying metal layer to be etched, the higher the etching accuracy. Therefore, when forming a high-density wiring board, it is based on a copper-clad laminate using thin copper foil of 5 to 9 μm, but after laminating aluminum foil (about 50 μm thick), which is a carrier for 2W4 foil, physical or chemical It has disadvantages such as the need to remove it.
なお、粗面を存する基板を使ったレプリカ法により形成
した接着性のよい粗面上に無電解めっきを適用して回路
加工する方法もあるが、原版となる粗面を形成する工程
が必要である。There is also a method of processing circuits by applying electroless plating on a rough surface with good adhesiveness formed by a replica method using a substrate with a rough surface, but this requires a process to form a rough surface as an original. be.
本発明は9回路と絶縁基板間の接着力が優れると共に、
高密度な印刷配線板を簡単な工程で製造する方法を提供
するものである。The present invention has excellent adhesive strength between the 9 circuits and the insulating substrate, and
The present invention provides a method for manufacturing a high-density printed wiring board through simple steps.
(問題点を解決するための手段)
本発明は、まず、仮の保持基材上に無電解めっき法、真
空蒸着法、スパッタリング法などで金属銅薄層を形成す
る0次に、酸化剤を含む処理液に接触させて金属銅を酸
化銅にする。次に絶縁性有機材料を積層し、保持基材を
除去する。次いで絶縁性有機材料表面にある酸化1i1
層に還元処理を施し、金属銅およびまたは亜酸化銅とす
る。次に無電解めっき法あるいは無電解銅と電気銅めっ
きの併用によって金属銅層を所望の厚さまでめっき回路
パターンを形成するようにしたものである。(Means for Solving the Problems) The present invention first involves forming a thin metallic copper layer on a temporary holding base material by electroless plating, vacuum evaporation, sputtering, etc. Next, an oxidizing agent is applied. Metallic copper is turned into copper oxide by contacting it with a processing solution containing it. Next, an insulating organic material is laminated, and the holding base material is removed. Next, oxidation 1i1 on the surface of the insulating organic material
The layer is subjected to a reduction treatment to form metallic copper and/or cuprous oxide. Next, a metal copper layer is formed to a desired thickness by electroless plating or a combination of electroless copper and electrolytic copper plating to form a plating circuit pattern.
第1図fa)〜(flは本発明の一実施例を示すもので
ある。FIGS. 1 fa) to (fl) show an embodiment of the present invention.
テフロンテープにチアス■社製商品名)1上にスパッタ
リング装置MLH−6315D(日本真空技術社製)を
用いて、下記の条件で厚さ1.5μmの銅薄層2を形成
する(第1図(al、 (bl)。A thin copper layer 2 with a thickness of 1.5 μm is formed on a Teflon tape (trade name, manufactured by Chias Corporation) 1 using a sputtering device MLH-6315D (manufactured by Japan Vacuum Technology Co., Ltd.) under the following conditions (see Fig. 1). (al, (bl).
出力 1.5KW
加熱 120℃、45分
圧力 5×10−″Torr
Arガス流1 353CCM
この場合使用可能な仮の保持基材としてはフッ素系樹脂
フィルムの他に、ポリイミドフィルム、接着用粗化処理
を金属銅板にフッ素系あるいはポリイミド樹脂をコーテ
ィングしたもの、市販のガラス板、鏡面仕上げされたス
テンレス板等が挙げられる。銅薄層の厚さは0.5μm
〜10μmである。Output: 1.5KW Heating: 120°C, 45 minutes Pressure: 5 x 10-''Torr Ar gas flow: 1 353CCM In addition to fluororesin film, the temporary holding base material that can be used in this case is polyimide film, roughened adhesive film. Examples include a metal copper plate coated with fluorine-based or polyimide resin, a commercially available glass plate, and a mirror-finished stainless steel plate.The thickness of the thin copper layer is 0.5 μm.
~10 μm.
次に、銅薄層2を酸化銅3とする(第1図(C))。酸
化銅処理条件は例えば次の通りである。Next, the copper thin layer 2 is made of copper oxide 3 (FIG. 1(C)). The copper oxide treatment conditions are, for example, as follows.
NaOH=15g/I
Naa Po ・12Hz O−30g/ INa
CLOz = 80 g/ 1純水=1リツターにな
る量
液温−85±2℃
M4薄浸清時間−180秒
この他、酸化銅を形成する方法としては。NaOH=15g/I Naa Po ・12Hz O-30g/INa
CLOz = 80 g/1 pure water = 1 liter amount Liquid temperature: -85±2°C M4 thin immersion time: -180 seconds Other methods for forming copper oxide include:
亜塩素酸ナトリウム、次亜塩素酸ナトリウム過硫酸カリ
ウム、塩素酸カリウム、過塩素酸カリウムなどの酸化剤
を含む処理液で処理する方法がある。There is a method of treatment using a treatment solution containing an oxidizing agent such as sodium chlorite, sodium hypochlorite, potassium persulfate, potassium chlorate, or potassium perchlorate.
なお、銅薄層2の形成法としては無電解めっき法がある
が、その場合スパッリング法と異なり、保持基材表面を
物理できあるいは化学的に粗面化する工程が不可欠であ
る。Note that electroless plating is a method for forming the copper thin layer 2, but in this case, unlike the sputtering method, a step of physically or chemically roughening the surface of the holding base material is essential.
次に、絶縁性有機ガラス布−エポキシプリプレグ4と加
圧積層する(第1図(dl)、積層条件は成形圧力35
kg/cj、 170℃で 60分間である。酸化銅
3を形成した後積層する絶縁性有機基材料としては他に
、変性ポリイミド、ポリイミド、フェノールなど一般の
銅張り積層板に用いられる熱硬化性樹脂を含浸させたガ
ラス布、樹脂シート等を用いることができる。また、ポ
リエチレン、ポリエーテルサルホン、ポリエーテルイミ
ドなどの熱可塑性材料も用いることができる。Next, the insulating organic glass cloth-epoxy prepreg 4 is laminated under pressure (Fig. 1 (dl), the lamination condition is 35 m
kg/cj, 60 minutes at 170°C. Other insulating organic base materials to be laminated after forming the copper oxide 3 include glass cloth, resin sheets, etc. impregnated with thermosetting resins used in general copper-clad laminates, such as modified polyimide, polyimide, and phenol. Can be used. Thermoplastic materials such as polyethylene, polyethersulfone, and polyetherimide can also be used.
次に、テフロンフィルム1を剥離除去し。Next, the Teflon film 1 was peeled off and removed.
還元剤水溶液(水素化ホウ素すl−IJウム2g/ l
、 N a OH12、5g / 、液155℃)に
10分間漫漬して酸化銅層を還元する2は還元された銅
および/また亜酸化銅である。Reducing agent aqueous solution (sulfur borohydride 2g/l
2 is reduced copper and/or cuprous oxide. 2 is reduced copper and/or cuprous oxide.
この場合、還元剤水溶液−とじてホルマリン。In this case, the reducing agent aqueous solution is combined with formalin.
次亜リン酸2次亜リン酸ナトリウム、抱水ヒドラジン、
硫酸ヒドラジン、N、N’ −)リメチルボラザン、
N、N’ −ジメチリボラゼンなどの一種又は二種以
上を溶解させたものでもよい。Hypophosphorous acid, sodium hypophosphite, hydrazine hydrate,
hydrazine sulfate, N,N'-)limethylborazane,
It may also be one in which one or more of N,N'-dimethyliborazene and the like are dissolved.
次に下記組成及び条件の無電解銅めっき5を行う。Next, electroless copper plating 5 is performed with the following composition and conditions.
CuSO4・5Hz O=10g/I
EDTA・4Na =40g/l
pH−12,3
37%HCHO=3ml/1
めっき液添加量 −少量
めっき液温度 −70℃
めっき膜厚 −3μm
水洗乾煽後、フォトレジストをロールラミネーターによ
りラミネートし、ポジマスクを当て紫外線を照射した後
、現像液スプレーし現像した。形成したレジストパター
ン6のライン/スペースは50μm150μmである(
第1図(e))。次いで電気銅めっき(硫酸鋼めっきを
施し所望する部分に厚さ30μmの銅パターン7を形成
した。CuSO4・5Hz O=10g/I EDTA・4Na=40g/l pH-12.3 37%HCHO=3ml/1 Plating solution addition amount - Small amount Plating solution temperature -70℃ Plating film thickness -3μm After washing with water and drying, photo The resist was laminated using a roll laminator, a positive mask was applied, and ultraviolet rays were irradiated, followed by spraying a developer and developing. The lines/spaces of the formed resist pattern 6 are 50 μm and 150 μm (
Figure 1(e)). Next, electrolytic copper plating (sulfuric acid steel plating) was applied to form a copper pattern 7 having a thickness of 30 μm on a desired portion.
レジストパターン6を塩化メチレンで剥離し過硫酸アン
モニウム溶液(?11度:50g/l液度:45℃)で
無電解めっき層5及び還元生成したおよび/また酸化銅
層2′の一部分をエツチングしく第1図ffl>、所望
する配線パターン7を得た。この場合のエツチング液と
して、過硫酸アンモニウムの銅、鉄塩等の酸素系及び前
記のアルカリ系エッチャント(多過アンモニウム塩系)
等が使用し得る。The resist pattern 6 is removed with methylene chloride, and a portion of the electroless plating layer 5 and the reduced copper oxide layer 2' are etched using an ammonium persulfate solution (11 degrees: 50 g/l liquid level: 45 degrees Celsius). 1 ffl>, a desired wiring pattern 7 was obtained. In this case, the etching solution is an oxygen-based etchant such as copper or iron salt of ammonium persulfate, or an alkaline-based etchant (polyammonium persulfate-based).
etc. can be used.
上記の工程においてテフロンフィルム1を剥離した後1
次のような種々の工程により配線パターンを得ることも
出来る。After peeling off the Teflon film 1 in the above process 1
The wiring pattern can also be obtained by various processes such as those described below.
A、レジストパターンを形成し、レジストパターン部以
外に露出している酸化銅を還元し無電解めっき法により
所望する厚さのパターン7を形成し、レジストパターン
を剥離し。A. Form a resist pattern, reduce the copper oxide exposed outside the resist pattern, form a pattern 7 with a desired thickness by electroless plating, and peel off the resist pattern.
レジストパターン下部にあった酸化銅をラインエッチン
グ除去する方法。A method to remove copper oxide at the bottom of the resist pattern by line etching.
B、レジストパターンを形成し、レジストパターン部以
外に露出している酸化銅を還元し無電解めっき法と電気
めっき法を併用して所望する厚さのパターンを形成し、
レジストパターンを剥離し、レジストパターン下部にあ
った酸化銅をクイックエツチング除去する方法。B. Forming a resist pattern, reducing copper oxide exposed outside the resist pattern area, and forming a pattern with a desired thickness using a combination of electroless plating and electroplating;
A method of peeling off the resist pattern and using quick etching to remove the copper oxide located at the bottom of the resist pattern.
C,レジストパターンを形成し、レジストパターン部以
外に露出している酸化銅をクイックエツチング除去し、
レジストパターンを剥離した後、残存している酸化銅を
還元し無電解めっきを施す方法。C. Form a resist pattern and remove copper oxide exposed outside the resist pattern area by quick etching.
A method in which after the resist pattern is removed, the remaining copper oxide is reduced and electroless plating is applied.
D、酸化1i13を還元処理し、レジストパターン形成
後無電解めっき法あるいは無電解めっき法と電気めっき
法を併用して所望する厚さのパターン7を形成し、レジ
ストパターンを剥離した後、還元生成した銅あるいは亜
酸化銅をクイックエツチング除去する方法。D. Oxide 1i13 is reduced, and after forming a resist pattern, electroless plating or a combination of electroless plating and electroplating is used to form a pattern 7 with a desired thickness, and after peeling off the resist pattern, reduction formation is performed. A quick etching method to remove copper or cuprous oxide.
本発明において、還元処理により樹脂基板に生成する銅
および/または亜酸化銅層の厚さ及び形状は、保持基材
上に形成される銅薄層厚さ、あるいは、還元処理工程で
の条件を適宜変更することにより調整できる。In the present invention, the thickness and shape of the copper and/or cuprous oxide layer formed on the resin substrate by the reduction treatment depend on the thickness of the copper thin layer formed on the holding base material or the conditions in the reduction treatment step. It can be adjusted by changing it appropriately.
還元生成する亜酸化銅および/または銅の樹脂基板に対
する接着力は酸化鋼の樹脂基板に対する接着力に依存し
ており、酸化銅形状を変えることで調整できる。The adhesive strength of cuprous oxide and/or copper produced by reduction to the resin substrate depends on the adhesive strength of oxidized steel to the resin substrate, and can be adjusted by changing the shape of the copper oxide.
(発明の効果) 本発明により、以下の効果を得ることができた。(Effect of the invention) According to the present invention, the following effects could be obtained.
fl) エツチングによるライン中精度及び絶縁特性
に優れ、かつ配線金属との接着力が高い高密度印刷配線
板を製造できた。fl) It was possible to produce a high-density printed wiring board that had excellent in-line accuracy and insulation properties by etching, and had high adhesive strength with wiring metal.
(2)還元生成した銅あるいは亜酸化銅表面には微細な
凹凸があるため、レジストパターン形成用の粗化処理が
不要であること、更に。(2) Since the surface of copper or cuprous oxide produced by reduction has fine irregularities, roughening treatment for resist pattern formation is not necessary.
無電解めっき用の触媒処理工程も不要であるため、スル
ープットが著しく向上した。There is no need for a catalyst treatment step for electroless plating, which significantly improves throughput.
(3) レプリカ法に比べ、接着層(酸化銅の形状を
もった亜酸化銅あるいは銅層)の形成が容易で直に配線
形成用下地層として使用できるため、コストの低減、生
産性に向上を図ることができた。(3) Compared to the replica method, it is easier to form an adhesive layer (cuprous oxide or copper layer in the shape of copper oxide) and can be used directly as a base layer for wiring formation, reducing costs and improving productivity. We were able to achieve this goal.
第1図fa)〜ff)は本発明の方法を示す断面図であ
る。
符号の説明
l 保持基材 2 銅薄層
3 酸化m 4 プリプレグ5 無電解
銅めっき 6 レジスト
7 配線パターン
(a)
つ
(b) 。
(c)
第1図Figures 1 fa) to ff) are cross-sectional views illustrating the method of the invention. Explanation of symbols 1 Holding base material 2 Thin copper layer 3 Oxidation m 4 Prepreg 5 Electroless copper plating 6 Resist 7 Wiring pattern (a) (b). (c) Figure 1
Claims (1)
酸化銅面に絶縁性有機材料を積層し、保持基材を除去し
、還元剤溶液を接触後、導電性金属をめっきする工程を
含む回路加工を行うことを特徴とする印刷配線板の製造
法。1. forming a thin copper layer on a temporary holding substrate and contacting it with a treatment solution containing an oxidizing agent to turn the thin copper layer into copper oxide;
A method for manufacturing a printed wiring board, which comprises laminating an insulating organic material on a copper oxide surface, removing a holding base material, contacting a reducing agent solution, and performing circuit processing including the steps of plating a conductive metal. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28263387A JPH01124287A (en) | 1987-11-09 | 1987-11-09 | Manufacture of printed-circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28263387A JPH01124287A (en) | 1987-11-09 | 1987-11-09 | Manufacture of printed-circuit board |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01124287A true JPH01124287A (en) | 1989-05-17 |
Family
ID=17655058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28263387A Pending JPH01124287A (en) | 1987-11-09 | 1987-11-09 | Manufacture of printed-circuit board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01124287A (en) |
-
1987
- 1987-11-09 JP JP28263387A patent/JPH01124287A/en active Pending
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