JPH01120340U - - Google Patents
Info
- Publication number
- JPH01120340U JPH01120340U JP1492588U JP1492588U JPH01120340U JP H01120340 U JPH01120340 U JP H01120340U JP 1492588 U JP1492588 U JP 1492588U JP 1492588 U JP1492588 U JP 1492588U JP H01120340 U JPH01120340 U JP H01120340U
- Authority
- JP
- Japan
- Prior art keywords
- trench
- silicon
- nitride film
- silicon nitride
- covering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988014925U JPH0726843Y2 (ja) | 1988-02-05 | 1988-02-05 | 半導体素子分離構造 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988014925U JPH0726843Y2 (ja) | 1988-02-05 | 1988-02-05 | 半導体素子分離構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01120340U true JPH01120340U (US07122547-20061017-C00032.png) | 1989-08-15 |
| JPH0726843Y2 JPH0726843Y2 (ja) | 1995-06-14 |
Family
ID=31226532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988014925U Expired - Lifetime JPH0726843Y2 (ja) | 1988-02-05 | 1988-02-05 | 半導体素子分離構造 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0726843Y2 (US07122547-20061017-C00032.png) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55102235A (en) * | 1979-01-29 | 1980-08-05 | Nippon Telegr & Teleph Corp <Ntt> | Formation of interlayer conductive layer |
| JPS57204144A (en) * | 1981-06-10 | 1982-12-14 | Hitachi Ltd | Insulating and isolating method for semiconductor integrated circuit |
| JPS58153349A (ja) * | 1982-03-08 | 1983-09-12 | Nec Corp | 半導体装置の製造方法 |
| JPS60241230A (ja) * | 1984-05-16 | 1985-11-30 | Hitachi Micro Comput Eng Ltd | 半導体装置 |
-
1988
- 1988-02-05 JP JP1988014925U patent/JPH0726843Y2/ja not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55102235A (en) * | 1979-01-29 | 1980-08-05 | Nippon Telegr & Teleph Corp <Ntt> | Formation of interlayer conductive layer |
| JPS57204144A (en) * | 1981-06-10 | 1982-12-14 | Hitachi Ltd | Insulating and isolating method for semiconductor integrated circuit |
| JPS58153349A (ja) * | 1982-03-08 | 1983-09-12 | Nec Corp | 半導体装置の製造方法 |
| JPS60241230A (ja) * | 1984-05-16 | 1985-11-30 | Hitachi Micro Comput Eng Ltd | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0726843Y2 (ja) | 1995-06-14 |
